JP5475785B2 - マイクロリソグラフィ投影露光装置の照明システム - Google Patents

マイクロリソグラフィ投影露光装置の照明システム Download PDF

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JP5475785B2
JP5475785B2 JP2011528238A JP2011528238A JP5475785B2 JP 5475785 B2 JP5475785 B2 JP 5475785B2 JP 2011528238 A JP2011528238 A JP 2011528238A JP 2011528238 A JP2011528238 A JP 2011528238A JP 5475785 B2 JP5475785 B2 JP 5475785B2
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Prior art keywords
mirror
illumination system
mirror element
control device
temperature control
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Japanese (ja)
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JP2012504324A5 (enExample
JP2012504324A (ja
Inventor
バッハ フロリアン
ベンツ ダニエル
ヴァルディス セヴェリン
ヴェルベル アルミン
ヴァルム ベルント
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V33/00Structural combinations of lighting devices with other articles, not otherwise provided for
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • G03F7/70291Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2011528238A 2008-09-29 2009-09-23 マイクロリソグラフィ投影露光装置の照明システム Active JP5475785B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08017088A EP2169464A1 (en) 2008-09-29 2008-09-29 Illumination system of a microlithographic projection exposure apparatus
EP08017088.9 2008-09-29
PCT/EP2009/006856 WO2010034472A1 (en) 2008-09-29 2009-09-23 Illumination system of a microlithographic projection exposure apparatus

Publications (3)

Publication Number Publication Date
JP2012504324A JP2012504324A (ja) 2012-02-16
JP2012504324A5 JP2012504324A5 (enExample) 2012-11-01
JP5475785B2 true JP5475785B2 (ja) 2014-04-16

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JP2011528238A Active JP5475785B2 (ja) 2008-09-29 2009-09-23 マイクロリソグラフィ投影露光装置の照明システム

Country Status (6)

Country Link
US (2) US8797507B2 (enExample)
EP (1) EP2169464A1 (enExample)
JP (1) JP5475785B2 (enExample)
KR (1) KR101704069B1 (enExample)
TW (1) TWI464542B (enExample)
WO (1) WO2010034472A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2169464A1 (en) * 2008-09-29 2010-03-31 Carl Zeiss SMT AG Illumination system of a microlithographic projection exposure apparatus
DE102010025222A1 (de) * 2010-06-23 2011-12-29 Carl Zeiss Smt Gmbh Steuerbare Spiegelanordnung, optisches System mit einer steuerbaren Spiegelanordnung und Verfahren zur Ansteuerung einer steuerbaren Spiegelanordnung
CN103038708B (zh) 2010-07-30 2016-08-17 卡尔蔡司Smt有限责任公司 Euv曝光设备
WO2012034571A1 (en) * 2010-09-14 2012-03-22 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
DE102010061950A1 (de) * 2010-11-25 2012-05-31 Carl Zeiss Smt Gmbh Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
DE102011005778A1 (de) * 2011-03-18 2012-09-20 Carl Zeiss Smt Gmbh Optisches Element
DE102011005840A1 (de) * 2011-03-21 2012-09-27 Carl Zeiss Smt Gmbh Steuerbare Mehrfachspiegelanordnung, optisches System mit einer steuerbaren Mehrfachspiegelanordnung sowie Verfahren zum Betreiben einer steuerbaren Mehrfachspiegelanordnung
JP5807761B2 (ja) * 2011-06-06 2015-11-10 株式会社ニコン 照明方法、照明光学装置、及び露光装置
DE102011104543A1 (de) * 2011-06-18 2012-12-20 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zur mikrolithographischen Projektion einer Maske
FR2996016B1 (fr) * 2012-09-25 2014-09-19 Sagem Defense Securite Illuminateur de photolithographie telecentrique selon deux directions
KR102089310B1 (ko) * 2013-01-25 2020-03-16 엘지디스플레이 주식회사 마스크리스 노광장치
DE102013204316B4 (de) * 2013-03-13 2015-07-23 Carl Zeiss Smt Gmbh Projektionsanordnung
US9854226B2 (en) * 2014-12-22 2017-12-26 Google Inc. Illuminator for camera system having three dimensional time-of-flight capture with movable mirror element
WO2017050360A1 (en) * 2015-09-23 2017-03-30 Carl Zeiss Smt Gmbh Method of operating a microlithographic projection apparatus and illuminations system of such an apparatus
NL2020548A (en) * 2017-04-12 2018-10-17 Asml Netherlands Bv Mirror Array
DE102017221420A1 (de) 2017-11-29 2018-11-29 Carl Zeiss Smt Gmbh Euv-beleuchtungssystem und verfahren zum erzeugen einer beleuchtungsstrahlung
DE102018123328B4 (de) * 2018-09-21 2022-09-08 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Betreiben eines solchen optischen Systems
KR102678312B1 (ko) * 2018-10-18 2024-06-25 삼성전자주식회사 Euv 노광 장치와 노광 방법, 및 그 노광 방법을 포함한 반도체 소자 제조 방법
KR20230086505A (ko) 2021-12-08 2023-06-15 삼성전자주식회사 공간 광 변조기 및 이를 포함하는 전자 장치
DE102021214366A1 (de) * 2021-12-15 2023-06-15 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Vermeidung einer Degradation einer optischen Nutzoberfläche eines Spiegelmoduls, Projektionssystem, Beleuchtungssystem sowie Projektionsbelichtungsanlage
EP4261580A1 (en) * 2022-04-14 2023-10-18 Airbus Defence and Space GmbH Apparatus and method for altering an optical surface of a mirror
DE102023208980A1 (de) * 2023-09-15 2024-08-01 Carl Zeiss Smt Gmbh MEMS-Mikrospiegeleinheit und Facettenspiegel

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2077572C (en) 1991-09-07 1998-08-18 Masahito Niibe Method of and apparatus for stabilizing shapes of objects, such as optical elements, as well as exposure apparatus using same and method of manufacturing semiconductr devices
DE10140208C2 (de) 2001-08-16 2003-11-06 Zeiss Carl Optische Anordnung
JP4320999B2 (ja) * 2002-02-04 2009-08-26 株式会社ニコン X線発生装置及び露光装置
JP4324957B2 (ja) 2002-05-27 2009-09-02 株式会社ニコン 照明光学装置、露光装置および露光方法
AU2003271130A1 (en) * 2002-10-10 2004-05-04 Nikon Corporation Ultra-short ultraviolet optical system-use reflection mirror, ultra-short ultraviolet optical system, application method for ultra-short ultraviolet optical system, production method for ultra-short ultraviolet optical system, ultra-short ultraviolet exposure system, and application method for ultra-short ultraviolet exposu
US6996343B2 (en) * 2003-03-21 2006-02-07 Lucent Technologies Inc. Dispersion compensator
DE10317662A1 (de) 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Projektionsobjektiv, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur Herstellung einer Halbleiterschaltung
DE10327733C5 (de) 2003-06-18 2012-04-19 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Formung eines Lichtstrahls
TWI220097B (en) * 2003-07-21 2004-08-01 Avision Inc Image calibration method
KR101159867B1 (ko) 2003-09-12 2012-06-26 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투사 노출 장치용 조명 시스템
US7485485B2 (en) 2004-02-09 2009-02-03 Microvision, Inc. Method and apparatus for making a MEMS scanner
ATE511668T1 (de) 2004-02-17 2011-06-15 Zeiss Carl Smt Gmbh Beleuchtungssystem für eine mikrolithographische projektionsbelichtungsvorrichtung
WO2005083512A2 (de) 2004-02-26 2005-09-09 Carl Zeiss Smt Ag Beleuchtungssystem für eine mikrolithographie-projektionsbelichtungsanlage
US7079225B2 (en) * 2004-09-14 2006-07-18 Asml Netherlands B.V Lithographic apparatus and device manufacturing method
US20100014063A1 (en) * 2005-05-31 2010-01-21 Fujifilm Corporation Image exposure apparatus
JP2007150295A (ja) * 2005-11-10 2007-06-14 Carl Zeiss Smt Ag ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム
JP4778834B2 (ja) * 2006-05-24 2011-09-21 富士フイルム株式会社 画像記録方法及び装置
US8052289B2 (en) * 2006-06-07 2011-11-08 Asml Netherlands B.V. Mirror array for lithography
EP1890191A1 (en) * 2006-08-14 2008-02-20 Carl Zeiss SMT AG Catadioptric projection objective with pupil mirror
DE102006039895A1 (de) 2006-08-25 2008-03-13 Carl Zeiss Smt Ag Verfahren zur Korrektur von durch Intensitätsverteilungen in optischen Systemen erzeugten Abbildungsveränderungen sowie entsprechendes optisches System
US7804603B2 (en) 2006-10-03 2010-09-28 Asml Netherlands B.V. Measurement apparatus and method
JP5098306B2 (ja) * 2006-11-22 2012-12-12 株式会社ニコン 露光装置、デバイス製造方法、及び露光方法
DE102008002377A1 (de) * 2007-07-17 2009-01-22 Carl Zeiss Smt Ag Beleuchtungssystem sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einem derartigen Beleuchtungssystem
KR101527242B1 (ko) * 2007-08-24 2015-06-08 칼 짜이스 에스엠테 게엠베하 광학 소자 내의 온도 분포에 영향을 주기 위한 방법, 광학 보정 장치 및 이러한 광학 보정 장치를 갖는 투영 노광 장치
CN102203674B (zh) 2008-09-22 2015-08-12 Asml荷兰有限公司 光刻设备、可编程图案形成装置和光刻方法
EP2169464A1 (en) 2008-09-29 2010-03-31 Carl Zeiss SMT AG Illumination system of a microlithographic projection exposure apparatus

Also Published As

Publication number Publication date
US20110181850A1 (en) 2011-07-28
EP2169464A1 (en) 2010-03-31
KR20110059800A (ko) 2011-06-03
WO2010034472A1 (en) 2010-04-01
US8797507B2 (en) 2014-08-05
JP2012504324A (ja) 2012-02-16
US20140307239A1 (en) 2014-10-16
TW201022854A (en) 2010-06-16
TWI464542B (zh) 2014-12-11
US9523922B2 (en) 2016-12-20
KR101704069B1 (ko) 2017-02-07

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