KR101704069B1 - 마이크로리소그래픽 투영 노광 장치의 조명 시스템 - Google Patents

마이크로리소그래픽 투영 노광 장치의 조명 시스템 Download PDF

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KR101704069B1
KR101704069B1 KR1020117009693A KR20117009693A KR101704069B1 KR 101704069 B1 KR101704069 B1 KR 101704069B1 KR 1020117009693 A KR1020117009693 A KR 1020117009693A KR 20117009693 A KR20117009693 A KR 20117009693A KR 101704069 B1 KR101704069 B1 KR 101704069B1
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South Korea
Prior art keywords
mirror
mirror element
lighting system
light source
light
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Korean (ko)
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KR20110059800A (ko
Inventor
플로리안 바흐
다니엘 벤츠
제베린 발디스
아르민 베르버
베른트 바름
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칼 짜이스 에스엠테 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V33/00—Structural combinations of lighting devices with other articles, not otherwise provided for
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR1020117009693A 2008-09-29 2009-09-23 마이크로리소그래픽 투영 노광 장치의 조명 시스템 Active KR101704069B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08017088.9 2008-09-29
EP08017088A EP2169464A1 (en) 2008-09-29 2008-09-29 Illumination system of a microlithographic projection exposure apparatus
PCT/EP2009/006856 WO2010034472A1 (en) 2008-09-29 2009-09-23 Illumination system of a microlithographic projection exposure apparatus

Publications (2)

Publication Number Publication Date
KR20110059800A KR20110059800A (ko) 2011-06-03
KR101704069B1 true KR101704069B1 (ko) 2017-02-07

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KR1020117009693A Active KR101704069B1 (ko) 2008-09-29 2009-09-23 마이크로리소그래픽 투영 노광 장치의 조명 시스템

Country Status (6)

Country Link
US (2) US8797507B2 (enExample)
EP (1) EP2169464A1 (enExample)
JP (1) JP5475785B2 (enExample)
KR (1) KR101704069B1 (enExample)
TW (1) TWI464542B (enExample)
WO (1) WO2010034472A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2169464A1 (en) * 2008-09-29 2010-03-31 Carl Zeiss SMT AG Illumination system of a microlithographic projection exposure apparatus
DE102010025222A1 (de) * 2010-06-23 2011-12-29 Carl Zeiss Smt Gmbh Steuerbare Spiegelanordnung, optisches System mit einer steuerbaren Spiegelanordnung und Verfahren zur Ansteuerung einer steuerbaren Spiegelanordnung
TWI475330B (zh) * 2010-07-30 2015-03-01 卡爾蔡司Ｓｍｔ有限公司 超紫外線曝光裝置
WO2012034571A1 (en) * 2010-09-14 2012-03-22 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
DE102010061950A1 (de) * 2010-11-25 2012-05-31 Carl Zeiss Smt Gmbh Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
DE102011005778A1 (de) 2011-03-18 2012-09-20 Carl Zeiss Smt Gmbh Optisches Element
DE102011005840A1 (de) * 2011-03-21 2012-09-27 Carl Zeiss Smt Gmbh Steuerbare Mehrfachspiegelanordnung, optisches System mit einer steuerbaren Mehrfachspiegelanordnung sowie Verfahren zum Betreiben einer steuerbaren Mehrfachspiegelanordnung
JP5807761B2 (ja) * 2011-06-06 2015-11-10 株式会社ニコン 照明方法、照明光学装置、及び露光装置
DE102011104543A1 (de) * 2011-06-18 2012-12-20 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zur mikrolithographischen Projektion einer Maske
FR2996016B1 (fr) * 2012-09-25 2014-09-19 Sagem Defense Securite Illuminateur de photolithographie telecentrique selon deux directions
KR102089310B1 (ko) * 2013-01-25 2020-03-16 엘지디스플레이 주식회사 마스크리스 노광장치
DE102013204316B4 (de) * 2013-03-13 2015-07-23 Carl Zeiss Smt Gmbh Projektionsanordnung
US9854226B2 (en) * 2014-12-22 2017-12-26 Google Inc. Illuminator for camera system having three dimensional time-of-flight capture with movable mirror element
JP6643466B2 (ja) * 2015-09-23 2020-02-12 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影装置を動作させる方法およびそのような装置の照明システム
WO2018188859A1 (en) * 2017-04-12 2018-10-18 Asml Netherlands B.V. Mirror array
DE102017221420A1 (de) 2017-11-29 2018-11-29 Carl Zeiss Smt Gmbh Euv-beleuchtungssystem und verfahren zum erzeugen einer beleuchtungsstrahlung
DE102018123328B4 (de) * 2018-09-21 2022-09-08 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum Betreiben eines solchen optischen Systems
KR102678312B1 (ko) 2018-10-18 2024-06-25 삼성전자주식회사 Euv 노광 장치와 노광 방법, 및 그 노광 방법을 포함한 반도체 소자 제조 방법
KR20230086505A (ko) 2021-12-08 2023-06-15 삼성전자주식회사 공간 광 변조기 및 이를 포함하는 전자 장치
DE102021214366A1 (de) * 2021-12-15 2023-06-15 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Vermeidung einer Degradation einer optischen Nutzoberfläche eines Spiegelmoduls, Projektionssystem, Beleuchtungssystem sowie Projektionsbelichtungsanlage
EP4261580A1 (en) * 2022-04-14 2023-10-18 Airbus Defence and Space GmbH Apparatus and method for altering an optical surface of a mirror
DE102023208980A1 (de) * 2023-09-15 2024-08-01 Carl Zeiss Smt Gmbh MEMS-Mikrospiegeleinheit und Facettenspiegel

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004092843A2 (de) * 2003-04-17 2004-10-28 Carl Zeiss Smt Ag Projektionsobjektiv, mikrolithographische projektionsbelichtungsanlage und verfahren zur herstellung einer halbleiterschaltung
US20060077553A1 (en) * 2003-03-21 2006-04-13 Neilson David T Dispersion compensating waveguide circuit
US20070165202A1 (en) * 2003-09-12 2007-07-19 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
EP1865359A1 (en) 2006-06-07 2007-12-12 ASML Netherlands B.V. Cooled mirror array for lithography

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69220868T2 (de) 1991-09-07 1997-11-06 Canon K.K., Tokio/Tokyo System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen
DE10140208C2 (de) 2001-08-16 2003-11-06 Zeiss Carl Optische Anordnung
JP4320999B2 (ja) * 2002-02-04 2009-08-26 株式会社ニコン Ｘ線発生装置及び露光装置
JP4324957B2 (ja) 2002-05-27 2009-09-02 株式会社ニコン 照明光学装置、露光装置および露光方法
AU2003271130A1 (en) * 2002-10-10 2004-05-04 Nikon Corporation Ultra-short ultraviolet optical system-use reflection mirror, ultra-short ultraviolet optical system, application method for ultra-short ultraviolet optical system, production method for ultra-short ultraviolet optical system, ultra-short ultraviolet exposure system, and application method for ultra-short ultraviolet exposu
DE10327733C5 (de) 2003-06-18 2012-04-19 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Formung eines Lichtstrahls
TWI220097B (en) * 2003-07-21 2004-08-01 Avision Inc Image calibration method
US7485485B2 (en) 2004-02-09 2009-02-03 Microvision, Inc. Method and apparatus for making a MEMS scanner
EP1716458B1 (en) 2004-02-17 2011-06-01 Carl Zeiss SMT GmbH Illumination system for a microlithographic projection exposure apparatus
JP4864869B2 (ja) 2004-02-26 2012-02-01 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置のための照明系
US7079225B2 (en) * 2004-09-14 2006-07-18 Asml Netherlands B.V Lithographic apparatus and device manufacturing method
US20100014063A1 (en) * 2005-05-31 2010-01-21 Fujifilm Corporation Image exposure apparatus
JP2007150295A (ja) * 2005-11-10 2007-06-14 Carl Zeiss Smt Ag ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム
JP4778834B2 (ja) 2006-05-24 2011-09-21 富士フイルム株式会社 画像記録方法及び装置
EP1890191A1 (en) * 2006-08-14 2008-02-20 Carl Zeiss SMT AG Catadioptric projection objective with pupil mirror
DE102006039895A1 (de) 2006-08-25 2008-03-13 Carl Zeiss Smt Ag Verfahren zur Korrektur von durch Intensitätsverteilungen in optischen Systemen erzeugten Abbildungsveränderungen sowie entsprechendes optisches System
US7804603B2 (en) 2006-10-03 2010-09-28 Asml Netherlands B.V. Measurement apparatus and method
JP5098306B2 (ja) * 2006-11-22 2012-12-12 株式会社ニコン 露光装置、デバイス製造方法、及び露光方法
DE102008002377A1 (de) * 2007-07-17 2009-01-22 Carl Zeiss Smt Ag Beleuchtungssystem sowie Projektionsbelichtungsanlage für die Mikrolithografie mit einem derartigen Beleuchtungssystem
EP2181357A1 (en) * 2007-08-24 2010-05-05 Carl Zeiss SMT AG Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
EP2329322B1 (en) 2008-09-22 2016-09-07 ASML Netherlands BV Lithographic apparatus and lithographic method
EP2169464A1 (en) * 2008-09-29 2010-03-31 Carl Zeiss SMT AG Illumination system of a microlithographic projection exposure apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060077553A1 (en) * 2003-03-21 2006-04-13 Neilson David T Dispersion compensating waveguide circuit
WO2004092843A2 (de) * 2003-04-17 2004-10-28 Carl Zeiss Smt Ag Projektionsobjektiv, mikrolithographische projektionsbelichtungsanlage und verfahren zur herstellung einer halbleiterschaltung
US20070165202A1 (en) * 2003-09-12 2007-07-19 Carl Zeiss Smt Ag Illumination system for a microlithography projection exposure installation
EP1865359A1 (en) 2006-06-07 2007-12-12 ASML Netherlands B.V. Cooled mirror array for lithography

Also Published As

Publication number Publication date
TWI464542B (zh) 2014-12-11
US8797507B2 (en) 2014-08-05
EP2169464A1 (en) 2010-03-31
JP2012504324A (ja) 2012-02-16
KR20110059800A (ko) 2011-06-03
US20140307239A1 (en) 2014-10-16
TW201022854A (en) 2010-06-16
US20110181850A1 (en) 2011-07-28
WO2010034472A1 (en) 2010-04-01
JP5475785B2 (ja) 2014-04-16
US9523922B2 (en) 2016-12-20

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