TWI464215B - 經聚矽氧樹脂封裝的光學半導體裝置 - Google Patents
經聚矽氧樹脂封裝的光學半導體裝置 Download PDFInfo
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Description
本發明係關於一種光學半導體裝置,且特定言之關於一種發光二極體(LED)裝置,其具有封裝於聚矽氧樹脂固化產物內之光學半導體元件。明確言之,本發明係關於一種光學半導體裝置,其由於在封裝用聚矽氧樹脂固化產物內併有預定量之(ΦSiO3/2
)單元(其中Φ表示苯基),因此在引線腳表面不會發生變色現象,且展現優良的抗熱震性。
光學半導體裝置包含安裝於引線腳上之光學半導體元件,該引線腳係由銀或含銀合金形成,或由鐵、銅或其類似物之基材及覆蓋該基材之鍍銀層與安置於前述兩者之間的諸如晶粒黏結劑(die bonding agent)之黏著劑形成。典型地將以下用作塗佈材料或封裝材料以保護光學半導體元件不受外部環境影響:聚矽氧樹脂組成物,及尤其可加成固化的聚矽氧橡膠組成物,其能夠形成展現優良的類橡膠性質(諸如耐候性、耐熱性、硬度及伸長率)之固化產物(參看專利文獻1及2)。然而,近年來,由環境中穿透封裝材料之腐蝕性氣體引起之引線腳變色已變成一大問題。
聚矽氧樹脂一般展現高度透氣性。因此,解決上述變色問題之潛在方法包括以透氣性較低之環氧樹脂代替聚矽氧樹脂或使用較硬的聚矽氧樹脂。然而,此等類型之樹脂的固化產物為堅硬的且有可能裂化,且會伴隨在抗熱震性方面有損失。
[專利文獻1]US 2004/0214966 A1
[專利文獻2]JP 2005-76003 A
本發明之一目標在於提供一種經聚矽氧樹脂封裝之光學半導體裝置,其不會發生引線腳變色現象且展現優良的抗熱震性。
由於旨在達成以上目標之大量研究,本發明之發明者發現藉由在封裝用聚矽氧樹脂固化產物內併有預定量之(ΦSiO3/2
)單元(其中Φ表示苯基),可達成以上目標。換言之,本發明提供一種光學半導體裝置,其包含光學半導體元件及封裝該光學半導體元件之聚矽氧樹脂組成物固化產物,其中藉由固體29
Si-DD/MAS分析測得,(ΦSiO3/2
)單元(其中Φ表示苯基)在該固化產物內之量在0.13mol/100g至0.37mol/100g之範圍內。
用包含預定量(ΦSiO3/2
)單元之固化產物封裝本發明之光學半導體裝置,且因此不僅防止了引線腳變色現象,而且抗熱震性亦為優良的。
下文將參考圖式描述本發明之光學半導體裝置的一個實例。圖1為說明光學半導體裝置之一個實例的示意性透視圖,且圖2為該裝置之示意性平面圖。圖3為沿圖2中說明之光學半導體裝置之線X-X的示意性截面圖。該光學半導體裝置包含光學半導體元件10、內部安裝光學半導體元件10之包裝20,及覆蓋光學半導體元件10之封裝部件30。包裝20具有導電引線腳21(特定言之為四個引線腳21a、21b、21c及21d)。包裝20具有帶有底面及側面之杯狀凹陷處,且在該凹陷處之底面處暴露出引線腳21之表面。引線腳21係由銀或含銀合金,或表面鍍銀之諸如鐵或銅之基材形成。光學半導體元件10經由晶粒黏結部件40(由於為薄層,因此在圖3中未展示)與引線腳21a連接,經由電線50a與另一引線腳21c連接,且經由電線50b與引線腳21d連接。諸如曾納(zener)之保護元件11可安裝於另一引線腳21b上。使用含有預定量之(ΦSiO3/2
)單元(其中Φ表示苯基)之封裝部件30來填充該杯狀凹陷處。封裝部件30亦可包含可吸收來自光學半導體元件10之光且改變波長的螢光材料60。
光學半導體元件10之實例包括由基於氮化鎵(GaN)之半導體形成之藍光發射LED晶片、紫外光發射LED晶片及雷射二極體以及其類似物。另外,亦可使用藉由使用MOCVD法或其類似方法在基板之上形成氮化物半導體(諸如InN、AlN、InGaN、AlGaN或InGaAlN)發光層來製備之元件。可使用面朝上安裝之光學半導體元件或覆晶安裝之光學半導體元件。此外,圖1至圖3中說明之光學半導體元件10為n側電極及p側電極安置於同一表面上之光學半導體元件的一個實例,但亦可使用n側電極提供於一個表面上且p側電極提供於相對表面上之光學半導體元件。
可使用兩種包裝,在第一種包裝中使引線腳21一體式地成型為包裝之一部分,而在第二種包裝中首先使包裝成型且接著使用電鍍或其類似方法來提供引線腳21作為該包裝上之電路配線。包裝20內凹陷處之底部形狀可採用多種形狀,包括平板形狀。構成包裝之樹脂較佳為具有優良耐光性及耐熱性之電絕緣樹脂,且可用樹脂之實例包括諸如聚鄰苯二甲醯胺樹脂之熱塑性樹脂、諸如環氧樹脂之熱固性樹脂,以及玻璃環氧樹脂及陶瓷。此外,為了確保有效地反射來自光學半導體元件10之光,可將諸如氧化鈦之白色顏料混合於此等樹脂中。可用於使包裝成型之方法的實例包括嵌入成型(其中在成型之前引線腳被定位於成型模內)、射出成型、擠壓成型及轉移成型。
引線腳21與光學半導體元件電連接,且例如可為插入包裝內之板狀引線腳,或為在玻璃環氧樹脂或陶瓷基板上形成之導電樣式。用於形成引線腳之材料可為銀或含銀合金,或者,主要由銅或鐵組成之引線腳可部分地鍍有銀或含銀合金。
封裝部件30可包含螢光材料或光擴散材料。螢光材料可為任何可吸收自光學半導體元件發射之光且發射螢光,從而改變光之波長的材料,且至少一種選自以下之材料為較佳的:基於氮化物之磷光體或基於氧氮化物之磷光體(主要以諸如Eu或Ce之鑭系元素活化)、鹼土鹵素磷灰石磷光體、鹼土金屬鹵素硼酸鹽磷光體、鹼土金屬鋁酸鹽磷光體、鹼土矽酸鹽磷光體、鹼土硫化物磷光體、鹼土硫代鎵酸鹽磷光體、鹼土氮化矽磷光體及鍺酸鹽磷光體(主要以諸如Eu之鑭系元素或諸如Mn之過渡金屬元素活化)、稀土鋁酸鹽磷光體及稀土矽酸鹽磷光體(主要以諸如Ce之鑭系元素活化),及有機或有機錯合物磷光體(主要以諸如Eu之鑭系元素活化)。此外,可適宜使用之螢光材料之特定實例包括(Y,Gd)3
(Al,Ga)5
O12
:Ce、(Ca,Sr,Ba)2
SiO4
:Eu、(Ca,Sr)2
Si5
N8
:Eu及CaAlSiN3
:Eu。
封裝部件30具有將來自光學半導體元件10之光有效地傳輸至外部環境中以及保護光學半導體元件及電線及其類似物不受粉塵及其類似物影響之功能。除此等功能外,封裝部件30在本發明中亦防止腐蝕性氣體滲透至裝置中。此防止引線腳之銀受腐蝕且使得光反射效率劣化。封裝部件係由聚矽氧樹脂組成物固化產物組成,且藉由固體29
Si-DD/MAS分析測得,(ΦSiO3/2
)單元(其中Φ表示苯基)在該固化產物內之量在0.13mol/100g至0.37mol/100g且較佳為0.17mol/100g至0.25mol/100g之範圍內。若此等(ΦSiO3/2
)單元(下文稱作「T-Φ單元(T-Φ unit)」)之量小於上述範圍之下限,則本發明在抑制引線腳變色方面之作用有可能不充分,然而若該量超過上述範圍之上限,則抗熱震性有可能劣化。
在本發明中,如下所述測定T-Φ單元量(mol/100g)。
使用核磁共振儀(AVANCE 700,由Bruker公司製造),藉由填充約100mg固體樣品(固化聚矽氧產物)於由氧化鋯製成且外徑為4mm之轉子內,隨後在9,000Hz下旋轉樣品,同時以30秒之間隔進行30度脈衝的輻射,且累積約1,000次重複之結果來進行固體29
Si-DD/MAS(偶極去耦/魔角旋轉(Dipolar Decoupling/Magic Angle Spinning))分析。圖4中說明所獲得之29
Si-DD/MAS光譜之類型的一個實例。根據由此獲得之29
Si-DD/MAS光譜,計算構成樣品之所有類型之矽氧烷單元各自所含的矽原子之比例(mol%)。此矽原子比例與該類型之矽氧烷單元之比例(mol%)相同。以相同之方式,獲得所有類型之矽氧烷單元之比例(mol%)。藉由將各類型之矽氧烷單元之mol%乘以特定矽氧烷單元類型之單元式量(例如在T-Φ單元之情況下,單元式量為130(=29+77+16×3/2))來獲得各類型之矽氧烷單元之比例(以質量計)。隨後,藉由將T-Φ單元之mol%值除以所有類型之矽氧烷單元之比例值(以質量計)的總和,且接著將由此計算之值乘以100來計算T-Φ單元量(mol/100g)。如下文在表1中所說明,當量測四種已知固化產物內T-Φ單元之量的值時,量測結果經證實實質上與根據起始矽烷化合物濃度計算出之理論量相同。
在本發明中指定之範圍內的T-Φ單元量可藉由使用包含下述組份(A)、(B)及(C)之組成物來實現。下文描述每一此等組份。
組份(A)係由以下構成:
(A-1)以如下所示之平均組成式(1)表示的含脂族不飽和基團之聚矽氧樹脂:
R1 a
R2 b
R3 c
(OX)d
SiO(4-a-b-c-d)/2
(1)
(其中各R1
獨立地表示甲基、乙基、丙基或環己基,且較佳為甲基,R2
表示苯基,R3
表示脂族不飽和基團,X表示氫原子或1至6個碳原子之烷基,其限制條件為OX基團經由氧原子鍵結於矽原子,a表示0.4至1.6之數字,b表示1.6至3.6之數字,c表示0.4至0.8之數字,且d表示0至0.05之數字,其限制條件為0<a+b+c+d<4),及
(A-2)以如下所示之式(2)表示的在兩個末端均具有脂族不飽和基團且在25℃下黏度在10至500,000mPa‧s範圍內之線性有機聚矽氧烷:
(其中R4
及R5
各自獨立地表示甲基、乙基、丙基、環己基或苯基,R6
表示乙烯基或烯丙基,k及l各自表示0至1,000之整數,其限制條件為k+l在10至1,000之範圍內且,且x表示1至3之整數)。
在表示(A-1)之式(1)中,R1
較佳為甲基,R3
表示乙烯基或烯丙基,且X表示氫原子,或1至6個碳原子之烷基,意謂OX表示烷氧基。1至6個碳原子之烷基的實例包括甲基、乙基、丙基、丁基、戊基或己基,且甲基為較佳的。
在式(1)中,若b值小於上文指定之下限,則組成物在防止引線腳受腐蝕方面之作用有可能不令人滿意,然而若b值超過上文指定之上限,則固化產物之抗熱震性可能劣化。若c值小於上文指定之下限,則可固化性有可能不充分,然而若c值超過上文指定之上限,則黏度變得難以調節,此為不合需要的。若d值超過上文指定之上限,則固化產物之表面有可能顯現膠黏性,此為不合需要的。
此外,此組份(A-1)之重量平均分子量係藉由凝膠滲透層析法(GPC)且以聚苯乙烯標準品作為參考來測定,典型的是在500至100,000之範圍內,且就所得組成物之黏度而言較佳為1,000至10,000。
可例如藉由以產生所需莫耳比之量組合充當構成有機聚矽氧烷之各矽氧烷單元之原料的化合物,且接著在酸存在下進行共水解縮合來合成具有此類樹脂結構之有機聚矽氧烷。
(RSiO3/2
)單元(亦即T單元)之原料的實例包括氯矽烷,諸如MeSiCl3
、EtSiCl3
、PhSiCl3
、丙基三氯矽烷及環己基三氯矽烷;及與此等氯矽烷中之各者一致的烷氧基矽烷,諸如甲氧基矽烷。
此外,其他單元之原料的實例包括氯矽烷,諸如Me2
ViSiCl、MeViSiCl2
、Ph2
ViSiCl及PhViSiCl2
;及與此等氯矽烷中之各者一致的烷氧基矽烷,諸如甲氧基矽烷。
表示組份(A-2)之以上式(2)之有機聚矽氧烷的實例包括下文所示之化合物。
(在各上式中,k及l各自表示0至1,000之整數,其限制條件為且較佳為,且其限制條件為。)
(A-1)與(A-2)之間的質量比典型地在20:80至80:20之範圍內,且較佳為40:60至70:30。
組份(B)為(B-1)以如下所示之式(3)表示的線性有機氫聚矽氧烷與(B-2)下述分支有機氫聚矽氧烷之混合物。
(其中R7
各自獨立地表示甲基、乙基、丙基、環己基或苯基,p及q各自表示0至100之整數,x及y各自獨立地表示0、1、2或3,其限制條件為p+q不小於3,且x+y+p為2或2以上之整數。)
線性有機氫聚矽氧烷在各分子中具有至少兩個、較佳為至少三個且更佳為3至10個與矽原子鍵結之氫原子。一個分子中之矽原子數目(亦即聚合度)較佳在5至500且更佳為5至300之範圍內。線性有機氫聚矽氧烷(B-1)之實例包括下文所示之化合物。
(其中n表示1至100之整數。)
(其中m表示1至100之整數,且n表示1至100之整數。)
(其中Ph表示苯基)
分支有機氫聚矽氧烷(B-2)在各分子中具有至少一個且較佳為1至20個分支,且具有至少2個、較佳為至少3個、更佳為3至10個與矽原子鍵結之氫原子。由所謂T單元及/或Q單元形成分支。整個分子之結構可為線性或具有分支之環狀結構,或其組合。一個分子中之矽原子數目(亦即聚合度)較佳在3至100、更佳為3至10之範圍內。組份(B-2)之實例包括下文所示之化合物。
(B-1)線性有機氫聚矽氧烷/(B-2)分支有機氫聚矽氧烷之質量比典型地在70/30至98/2之範圍內,且較佳為90/10至97/3。若此比率太小,則組成物在防止引線腳變色方面之作用有可能不令人滿意,然而若該比率太大,則固化產物可能顯現膠黏性(黏性)。
欲摻合之有機氫聚矽氧烷之量應使得其所含之與矽原子鍵結之氫原子與組份(A)中所含之脂族不飽和基團的莫耳比較佳在0.5至4.0、更佳為0.7至2.0之範圍內。
組份(C)為基於鉑族金屬之催化劑,該催化劑之添加旨在加速組份(A)與組份(B)之間的加成固化反應。組份(C)之催化劑典型地為基於鉑、基於鈀或基於銠之催化劑,且自成本及其類似因素之觀點來看,由鉑、鉑黑及氯鉑酸製成之基於鉑之催化劑及其類似物為較佳的。特定實例包括諸如以下之化合物:H2
PtCl6
‧mH2
O、K2
PtCl6
、KHPtCl6
‧mH2
O、K2
PtCl4
、K2
PtCl4
‧mH2
O及PtO2
‧mH2
O(其中m表示1或1以上之整數),以及此等化合物與烴(諸如烯烴)、醇類或含乙烯基之有機聚矽氧烷的錯合物。此等催化劑可個別地加以使用或以兩種或兩種以上不同催化劑之組合的形式使用。
組份(C)之量僅需足以確保有效固化,且根據鉑族金屬質量相對於組份(A)與(B)之組合質量之比率計算出的典型量在0.1ppm至500ppm之範圍內,其中0.5ppm至100ppm之量為較佳的。
除上述組份(A)至(C)之外,亦可將諸如無機填料、黏著助劑及固化延遲劑之習知添加劑以不會損害本發明效果之量添加至組成物中。
可添加之無機填料之實例包括增強型無機填料,諸如煙霧狀二氧化矽及煙霧狀二氧化鈦;及非增強型無機填料,諸如碳酸鈣、矽酸鈣、二氧化鈦、氧化鐵、碳黑及氧化鋅。此等無機填料可以按100質量份之組份(A)至(C)之組合質量計,在0至600質量份之範圍內的組合量添加。
在需要固化產物展現適宜的透明度之彼等情況下,較佳的是以不會損害透明度之量使用極細的二氧化矽,諸如Aerosil。可添加展現與固化聚矽氧樹脂組成物相同之折射率的無機填料以達成改良機械強度且改善膨脹係數之目的。
可添加之黏著助劑的實例包括具有4至50個矽原子且較佳為具有4至20個矽原子之線性或環狀有機矽氧烷寡聚物,其在各分子中包含至少兩個且較佳為二或三個選自由以下組成之群的官能基:鍵結於矽原子之氫原子(SiH基團)、鍵結於矽原子之烯基(諸如Si-CH=CH2
基團)、烷氧基矽烷基(諸如三甲氧基矽烷基)及環氧基(諸如縮水甘油氧基丙基或3,4-環氧基環己基乙基);及以如下所示之通式(4)表示之經有機氧基矽烷基修飾之異氰尿酸酯化合物及/或其水解-縮合產物(經有機矽氧烷修飾之異氰尿酸酯化合物)。
[其中R8
表示以如下所示之式(5)表示之有機基團:
(其中R9
表示氫原子或具有1至6個碳原子之單價烴基,且v表示1至6且較佳為1至4之整數),或包含脂族不飽和鍵之單價烴基,其限制條件為至少一個R8
基團為式(5)之有機基團。]
包含脂族不飽和鍵之單價烴基之實例包括具有2至8個碳原子且較佳為2至6個碳原子之烯基,諸如乙烯基、烯丙基、丙烯基、異丙烯基、丁烯基、異丁烯基、戊烯基或己烯基;及具有6至8個碳原子之環烯基,諸如環己烯基。此外,以式(5)中之R9
表示之單價烴基的實例包括具有1至8個碳原子且較佳為1至6個碳原子之單價烴基,包括烷基,諸如甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、己基或環己基;上文對於R8
例示之烯基及環烯基;及諸如苯基之芳基。其中,烷基為較佳的。
黏著助劑之特定實例包括1-縮水甘油氧基丙基-1,3,5,7-四甲基環四矽氧烷、1,5-縮水甘油氧基丙基-1,3,5,7-四甲基環四矽氧烷、1-縮水甘油氧基丙基-5-三甲氧基矽烷基乙基-1,3,5,7-四甲基環四矽氧烷及以如下所示之式表示之化合物。
(其中g及h各自獨立地表示0至100之整數,其限制條件為g+h在2至50且較佳為4至20之範圍內。)
在上述有機矽化合物中,在各分子內具有與矽原子鍵結之烷氧基及烯基或與矽原子鍵結之氫原子(SiH基團)的有機矽化合物為較佳的,因為其賦予對所得固化產物特別優越之黏著力。
按100質量份之組份(A)計,黏著助劑之量典型地為不超過10質量份,較佳為0.1至8質量份,且更佳為0.2至5質量份。太大之量會對固化產物之硬度具有不利影響,且亦會增加表面膠黏性。
固化延遲劑可用於使組成物能夠適宜在正常溫度條件下以液體狀態儲存。固化延遲劑之實例包括具有高乙烯基含量之有機聚矽氧烷(諸如四甲基四乙烯基環四矽氧烷)、異氰尿酸三烯丙酯、順丁烯二酸烷酯、乙炔醇及其經矽烷修飾或矽氧烷修飾之產物、氫過氧化物、四甲基乙二胺、苯并三唑以及以上化合物之混合物。典型的是,以按100質量份之組份(A)計0.001至1.0質量份且較佳為0.005至0.5質量份範圍內之量添加固化延遲劑。
藉由將上述組份均勻地混合在一起來製備聚矽氧樹脂組成物。典型的是,組份(A)及組份(B)係以兩種個別液體之形式儲存以防止發生固化,在使用時則將兩種液體混合且進行固化。亦可藉由添加少量固化延遲劑以一鍋式(one-pot)組成物之形式製備組成物。組成物之製備可使得在室溫下經歷固化,但通常地,組成物之製備使得室溫下之固化受固化延遲劑抑制,在需要時則藉由施加熱來幾乎立即引發固化。
此組成物可用於藉由使用分配器或其類似物塗覆組成物來塗佈光學半導體元件。以二鍋式組成物形式儲存及使用組成物可改良處理,且因此可改良生產力。在使用前不久使用諸如混合器或螺旋混合器之混合裝置進行混合,接著將所得混合物直接注射於成型設備中。儘管對固化條件不存在特定限制,固化條件可視聚矽氧樹脂組成物之可固化性而變化,但通常可藉由在40℃至180℃之溫度下加熱約30秒至4小時來進行固化。
實施例
在下文中基於一系列實施例較詳細地描述本發明。
[合成實施例1]合成組份(A-1)
經1小時將含有148.1g(70mol%)苯基三氯矽烷及36.15g(30mol%)二甲基乙烯基氯矽烷之混合物逐滴添加至經攪拌且已加熱至80℃的含有250g水及100g甲苯之混合溶劑介質中。在逐滴添加完成之後,回流混合物2小時,得到共水解縮合產物之甲苯溶液。使此溶液靜置沈降且冷卻至室溫,且在移除水層之後,以水重複洗滌甲苯層直至廢水變成中性為止。向由此獲得之有機聚矽氧烷甲苯溶液(有機層1)中添加相對於氯含量等同於20倍過量之量的KOH,且回流所得混合物兩小時。在反應之後,以三甲基氯矽烷中和反應混合物,且接著以水重複洗滌直至甲苯層變成中性(有機層2)為止。經無水硫酸鈉使有機層2脫水,且接著過濾以移除雜質。接著自濾液移除甲苯(在減壓下),得到固體樹脂(下文稱作「樹脂(A-1a)」)。
[合成實施例2]合成組份(A-1)
經1小時將含有116.3g(55mol%)苯基三氯矽烷、19.35g(15mol%)二甲基二氯矽烷及42.3g(30mol%)甲基乙烯基二氯矽烷之混合物逐滴添加至經攪拌且已加熱至80℃的含有250g水及100g甲苯之混合溶劑介質中。在逐滴添加完成之後,回流混合物2小時,得到共水解縮合產物之甲苯溶液。使此溶液靜置沈降且冷卻至室溫,且在移除水層之後,以水重複洗滌甲苯層直至廢水變成中性為止。向由此獲得之有機聚矽氧烷甲苯溶液(有機層1)中添加相對於氯含量等同於20倍過量之量的KOH,且回流所得混合物兩小時。在反應之後,以三甲基氯矽烷中和反應混合物,且接著以水重複洗滌直至甲苯層變成中性(有機層2)為止。經無水硫酸鈉使有機層2脫水,且接著過濾以移除雜質。接著自濾液移除甲苯(在減壓下),得到固體樹脂(下文稱作「樹脂(A-1b)」)。
[合成實施例3]合成黏著助劑
向反應容器中饋入67.7g 3-縮水甘油氧基丙基-甲基二甲氧基矽烷(KBM-402,由Shin-Etsu Chemical有限公司製造)、370g二甲氧基二甲基矽烷、20g乙烯基甲基二甲氧基矽烷及3,000ml異丙醇,添加25g 25%氫氧化四甲基銨水溶液及270g水,且在室溫下攪拌所得混合物3小時。在反應完成之後,將1,000ml甲苯添加至反應系統中,且使用磷酸二氫鈉水溶液中和混合物。使用分液漏斗,以熱水洗滌殘餘物。接著在減壓下移除甲苯,得到目標黏著助劑。
[比較實施例1]
將23g來自合成實施例2之含乙烯基之樹脂(樹脂(A-1b))、70g以如下所示之式(6)表示且在25℃下之黏度為4,000mPa‧s之線性乙烯基矽氧烷、
11.8g以如下所示之式(7)表示之有機氫矽氧烷、
3g以如下所示之式(8)表示之有機氫矽氧烷、
0.2g作為反應延遲劑的基於乙炔醇之化合物乙炔基環己醇及0.1g經辛醇修飾之氯鉑酸(鉑催化劑)溶液在60℃下加熱之行星混合器中充分混合在一起,得到比較組成物1。將比較組成物1傾入塗有鐵氟龍(Teflon)(商標)、深度為2mm、長度為17cm且寬度為13cm之模具中,且在150℃下固化4小時以獲得固化產物。附帶而言,在組成物中,有機氫聚矽氧烷中所含之與矽原子鍵結之氫原子與含乙烯基之樹脂及線性乙烯基矽氧烷中所含之脂族不飽和基團的莫耳比為1.9。
[實施例1]
除分別將樹脂(A-1b)之量改為31g,將用以上式(6)表示之線性乙烯基矽氧烷之量改為36g且將用以上式(7)表示之有機氫矽氧烷之量改為14.1g外,以與比較實施例1相同之方式獲得組成物1。以與比較實施例1相同之方式加熱組成物1以獲得固化產物。附帶而言,在組成物1中,有機氫聚矽氧烷中所含之與矽原子鍵結之氫原子與含乙烯基之樹脂及線性乙烯基矽氧烷中所含之脂族不飽和基團的莫耳比為1.5。
[實施例2]
除使用100g來自合成實施例1之含乙烯基之樹脂(樹脂(A-1a))代替樹脂(A-1b),且分別將用以上式(6)表示之線性乙烯基矽氧烷之量改為100g且將用以上式(7)表示之有機氫矽氧烷之量改為79g外,以與比較實施例1相同之方式獲得組成物2。以與比較實施例1相同之方式加熱組成物2以獲得固化產物。附帶而言,在組成物中,有機氫聚矽氧烷中所含之與矽原子鍵結之氫原子與含乙烯基之樹脂及線性乙烯基矽氧烷中所含之脂族不飽和基團的莫耳比為2.4。
[實施例3]
除使用60g樹脂(A-1a)代替樹脂(A-1b),且分別將用以上式(6)表示之線性乙烯基矽氧烷之量改為40g,將用以上式(7)表示之有機氫矽氧烷之量改為32.4g,且將用以上式(8)表示之有機氫矽氧烷之量改為2.3g外,以與比較實施例1相同之方式獲得組成物3。以與比較實施例1相同之方式加熱組成物3以獲得固化產物。附帶而言,在組成物中,有機氫聚矽氧烷中所含之與矽原子鍵結之氫原子與含乙烯基之樹脂及線性乙烯基矽氧烷中所含之脂族不飽和基團的莫耳比為1.7。
[實施例4]
除使用71.4g樹脂(A-1a)代替樹脂(A-1b),且分別將用以上式(6)表示之線性乙烯基矽氧烷之量改為30g,將用以上式(7)表示之有機氫矽氧烷之量改為43.2g,且將用以上式(8)表示之有機氫矽氧烷之量改為1.5g外,以與比較實施例1相同之方式獲得組成物4。以與比較實施例1相同之方式加熱組成物4以獲得固化產物。附帶而言,在組成物中,有機氫聚矽氧烷中所含之與矽原子鍵結之氫原子與含乙烯基之樹脂及線性乙烯基矽氧烷中所含之脂族不飽和基團的莫耳比為2.0。
[實施例5]
除使用76.9g樹脂(A-1a)代替樹脂(A-1b),且分別將用以上式(6)表示之線性乙烯基矽氧烷之量改為40g,將用以上式(7)表示之有機氫矽氧烷之量改為34.44g,且將用以上式(8)表示之有機氫矽氧烷之量改為1.5g外,以與比較實施例1相同之方式獲得組成物5。以與比較實施例1相同之方式加熱組成物5以獲得固化產物。附帶而言,在組成物中,有機氫聚矽氧烷中所含之與矽原子鍵結之氫原子與含乙烯基之樹脂及線性乙烯基矽氧烷中所含之脂族不飽和基團的莫耳比為1.5。
[比較實施例2]
除使用40.1g樹脂(A-1a)代替樹脂(A-1b),且將用以上式(8)表示之有機氫矽氧烷之量改為15.2外,以與比較實施例1相同之方式獲得比較組成物2。以與比較實施例1相同之方式加熱比較組成物2以獲得固化產物。附帶而言,在組成物中,有機氫聚矽氧烷中所含之與矽原子鍵結之氫原子與含乙烯基之樹脂及線性乙烯基矽氧烷中所含之脂族不飽和基團的莫耳比為1.2。
對來自實施例及比較實施例之組成物及其固化產物進行下述量測。結果詳見於表2中。
1) 組成物黏度(25℃)
使用BL型旋轉黏度計量測黏度。
2) 固化產物機械性質
根據JIS K6301量測拉伸強度(0.2mm厚度)、硬度(使用A型彈簧測試機量測)及伸長率(0.2mm厚度)。
3) 量測T-Φ單元量
使用核磁共振儀(AVANCE 700,由Bruker公司製造),藉由填充約100mg自固化產物削下之樣品於由氧化鋯製成且外徑為4mm之轉子內,隨後在9,000Hz下旋轉樣品,同時以30秒之間隔進行30度脈衝的輻射,且累積約1,000次重複之結果來進行固體29
Si-DD/MAS量測。
4) 半導體裝置回焊測試
進行回焊測試,其中使半導體裝置通過回焊爐且接著檢驗裂縫之存在。對於半導體裝置包裝,使用型號NSSW108(由Nichia公司製造)。使用晶粒黏結劑將光學半導體元件安裝於包裝內凹陷處內之引線腳框架,且以電線連接至電極。將各組成物注入此等包裝之一的凹陷處中,且接著在150℃下固化4小時,從而封裝光學半導體元件及電線。使十個由此獲得之半導體裝置通過最高溫度為260℃之IR回焊爐,且接著在光學顯微鏡下在10倍放大率下檢驗裂縫之存在。在表2中,詞「通過(Pass)」意謂未觀察到裂縫,然而詞「失敗(Fail)」表示觀察到裂縫。
5)引線腳變色測試
在25℃下在密封容器內在含有0.1ppm H2
S氣體之氛圍中儲存10個以與上文4)中所述方式相同之方式製備的裝置歷時一個月。隨後,量測各裝置之發光強度,且在裝置製備之後立即相對於100%之發光強度測定發光強度保留率。較高保留率表示較小變色。
如自表2顯而易見,包含含有預定T-Φ單元量之封裝材料的實施例1至5之裝置展現超過90%之發光強度保留率,甚至當進行回焊測試時亦未有裂縫,且亦展現優良之氣體障壁特性及回焊抗性。相反地,封裝材料內之T-Φ單元量過低的比較實施例1之裝置由於引線腳受腐蝕而展現較低發光強度保留率,且封裝材料內之T-Φ單元量過高的比較實施例2之裝置在回焊測試期間顯現裂縫。
本發明之光學半導體裝置可用於需要適度保持發光強度之所有應用方式中,包括作為液晶顯示器、行動電話及資訊終端內以及LED顯示器及內部或外部照明裝置內之背光。此外,本發明中所用之聚矽氧樹脂封裝材料可不僅用於諸如LED及雷射二極體之發光元件,而且用於封裝需要適度抑制腐蝕之光接收元件及除光學半導體元件以外之半導體元件(諸如LSI或IC元件)。
10‧‧‧光學半導體元件
11‧‧‧保護元件
20‧‧‧包裝
21a‧‧‧導電引線腳
21b‧‧‧導電引線腳
21c‧‧‧導電引線腳
21d‧‧‧導電引線腳
30‧‧‧封裝部件
40‧‧‧晶粒黏結部件
40a‧‧‧晶粒黏結部件
40b‧‧‧晶粒黏結部件
50a‧‧‧電線
50b‧‧‧電線
60‧‧‧螢光材料
圖1為說明光學半導體裝置之一個實例的示意性透視圖。
圖2為說明光學半導體裝置之一個實例的示意性平面圖。
圖3為說明光學半導體裝置之一個實例的示意性截面圖。
圖4為固體29
Si-DD/MAS NMR光譜圖之一個實例。
10...光學半導體元件
11...保護元件
20...包裝
21a...導電引線腳
21b...導電引線腳
30...封裝部件
40a...晶粒黏結部件
40b...晶粒黏結部件
50a...電線
60...螢光材料
Claims (4)
- 一種光學半導體裝置,其包含光學半導體元件及封裝該光學半導體元件之聚矽氧樹脂組成物固化產物,其中藉由固體29 Si-DD/MAS分析測得,(Φ SiO3/2 )單元(其中Φ表示苯基)在該固化產物內之量在0.13mol/100g至0.37mol/100g之範圍內,其中該聚矽氧樹脂組成物包含:(A)含脂族不飽和基團之有機聚矽氧烷,其包含:(A-1)以如下所示之平均組成式(1)表示的含脂族不飽和基團之聚矽氧樹脂,R1 a R2 b R3 c (OX)d SiO(4-a-b-c-d)/2 (1)其中各R1 獨立地表示甲基、乙基、丙基或環己基,R2 表示苯基,R3 表示脂族不飽和基團,X表示氫原子或1至6個碳原子之烷基,其限制條件為OX基團經由氧原子鍵結於矽原子,a表示0.4至1.6之數字,b表示1.6至3.6之數字,c表示0.4至0.8之數字,且d表示0至0.05之數字,其限制條件為0<a+b+c+d<4;及(A-2)以如下所示之式(2)表示的在兩個末端均具有脂族不飽和基團且在25℃下黏度在10至500,000mPa.s範圍內之線性有機聚矽氧烷:
- 如申請專利範圍第1項之光學半導體裝置,其中(Φ SiO3/2 )單元(其中Φ表示苯基)之量在0.17mol/100g至0.25mol/100g之範圍內。
- 如申請專利範圍第1項之光學半導體裝置,其中該光學半導體元件為發光二極體。
- 如申請專利範圍第1項之光學半導體裝置,其中該組成物進一步包含黏著助劑。
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JP5534977B2 (ja) * | 2010-06-29 | 2014-07-02 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および光半導体装置 |
CN103180394B (zh) * | 2010-12-22 | 2015-04-08 | 迈图高新材料日本合同公司 | 热固化型聚有机硅氧烷组合物及其使用 |
KR20140038950A (ko) * | 2011-03-28 | 2014-03-31 | 헨켈 차이나 컴퍼니 리미티드 | Led 캡슐화용 경화성 실리콘 수지 |
TW201247782A (en) * | 2011-05-25 | 2012-12-01 | Daxin Materials Corp | White thermocurable siloxane resin composition |
CN102391529B (zh) * | 2011-07-14 | 2013-08-28 | 杭州师范大学 | 一种封装用硅树脂型有机无机杂化材料制备方法 |
US10211380B2 (en) | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
CN103782402B (zh) * | 2011-07-21 | 2017-12-01 | 克利公司 | 用于改进的化学抗性的发光体器件封装、部件和方法、以及相关方法 |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
USD665366S1 (en) * | 2011-08-12 | 2012-08-14 | Silitek Electronic (Guangzhou) Co., Ltd. | Package carrier |
USD665367S1 (en) * | 2011-08-12 | 2012-08-14 | Silitek Electronic (Guangzhou) Co., Ltd. | Package carrier |
JP5893874B2 (ja) * | 2011-09-02 | 2016-03-23 | 信越化学工業株式会社 | 光半導体装置 |
KR101562091B1 (ko) | 2011-11-25 | 2015-10-21 | 주식회사 엘지화학 | 경화성 조성물 |
CN104247060A (zh) * | 2011-12-01 | 2014-12-24 | 克利公司 | 发光器件、具有改进的化学耐性的部件以及相关方法 |
US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
JP6400904B2 (ja) * | 2012-08-03 | 2018-10-03 | 横浜ゴム株式会社 | 硬化性樹脂組成物 |
CN104619780B (zh) * | 2012-09-14 | 2017-07-07 | 横滨橡胶株式会社 | 固化性树脂组合物 |
CN103012456B (zh) * | 2012-12-18 | 2015-11-18 | 烟台德邦先进硅材料有限公司 | 一种大功率led封装用有机硅低聚体的制备方法 |
US9657143B2 (en) | 2012-12-26 | 2017-05-23 | Cheil Industries, Inc. | Curable polysiloxane composition for optical device and encapsulant and optical device |
KR101556274B1 (ko) | 2012-12-28 | 2015-09-30 | 제일모직 주식회사 | 봉지재 조성물, 봉지재 및 전자 소자 |
JP5960613B2 (ja) * | 2013-01-04 | 2016-08-02 | 信越化学工業株式会社 | 半導体デバイスの製造方法 |
MY176313A (en) * | 2013-09-20 | 2020-07-28 | Lintec Corp | Curable composition, curing product, and method for using curable composition |
JP2015113348A (ja) * | 2013-12-06 | 2015-06-22 | 信越化学工業株式会社 | 硬化性組成物および光半導体装置 |
KR20160132008A (ko) * | 2014-03-12 | 2016-11-16 | 요코하마 고무 가부시키가이샤 | 경화성 수지 조성물 |
JP6194853B2 (ja) * | 2014-06-06 | 2017-09-13 | 信越化学工業株式会社 | 光半導体装置用白色熱硬化性シリコーン樹脂組成物、及び光半導体素子搭載用ケース |
CN107428945B (zh) * | 2015-03-20 | 2021-06-01 | 陶氏东丽株式会社 | 有机聚硅氧烷、其生产方法以及可固化的有机硅组合物 |
WO2019022861A1 (en) * | 2017-07-27 | 2019-01-31 | Dow Silicones Corporation | HYDROSILYLATION-CURABLE POLYSILOXANE |
CN107541075B (zh) * | 2017-09-28 | 2021-07-23 | 广州慧谷化学有限公司 | 热熔型有机聚硅氧烷组合物、荧光体片材及半导体器件 |
TWI798326B (zh) * | 2018-01-12 | 2023-04-11 | 美商陶氏有機矽公司 | 添加劑有機聚矽氧烷組成物、可固化組成物、及膜 |
JP7321969B2 (ja) * | 2020-05-07 | 2023-08-07 | 信越化学工業株式会社 | 熱硬化性シリコーン樹脂組成物及び光半導体装置用ダイアタッチ材 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6184407B1 (en) * | 1998-05-29 | 2001-02-06 | Dow Corning Toray Silicone Co., Ltd. | Carbosiloxane dendrimers |
US20050244649A1 (en) * | 2004-04-30 | 2005-11-03 | Shin-Etsu Chemical Co., Ltd. | Epoxy-silicone mixed resin composition and light-emitting semiconductor device |
CN101268120A (zh) * | 2005-09-22 | 2008-09-17 | 三菱化学株式会社 | 半导体发光器件用部件及其制造方法、以及使用该部件的半导体发光器件 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4125510A (en) * | 1977-03-01 | 1978-11-14 | Dow Corning Corporation | Method of improving crack resistance of siloxane molding compositions |
US7019100B2 (en) | 2003-04-23 | 2006-03-28 | Shin-Etsu Chemical Co., Ltd. | Curable silicone resin composition |
JP4180474B2 (ja) | 2003-09-03 | 2008-11-12 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 付加硬化型シリコーン組成物 |
JP4908736B2 (ja) | 2003-10-01 | 2012-04-04 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物および半導体装置 |
WO2007100445A2 (en) | 2006-02-24 | 2007-09-07 | Dow Corning Corporation | Light emitting device encapsulated with silicones and curable silicone compositions for preparing the silicones |
KR100909169B1 (ko) * | 2006-09-11 | 2009-07-23 | 제일모직주식회사 | 선 경화형 반도체 조립용 접착 필름 조성물 |
JP2008120843A (ja) * | 2006-11-08 | 2008-05-29 | Momentive Performance Materials Japan Kk | 光透過性シリコーンレジンと光透過性シリコーンレジン組成物および光半導体装置 |
-
2010
- 2010-02-01 JP JP2010020606A patent/JP5526823B2/ja active Active
- 2010-02-23 KR KR1020100015988A patent/KR101617467B1/ko active IP Right Grant
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- 2010-02-23 US US12/710,593 patent/US8164202B2/en active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6184407B1 (en) * | 1998-05-29 | 2001-02-06 | Dow Corning Toray Silicone Co., Ltd. | Carbosiloxane dendrimers |
US20050244649A1 (en) * | 2004-04-30 | 2005-11-03 | Shin-Etsu Chemical Co., Ltd. | Epoxy-silicone mixed resin composition and light-emitting semiconductor device |
CN101268120A (zh) * | 2005-09-22 | 2008-09-17 | 三菱化学株式会社 | 半导体发光器件用部件及其制造方法、以及使用该部件的半导体发光器件 |
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US20100213502A1 (en) | 2010-08-26 |
KR20100097035A (ko) | 2010-09-02 |
US8164202B2 (en) | 2012-04-24 |
KR101617467B1 (ko) | 2016-05-02 |
JP5526823B2 (ja) | 2014-06-18 |
CN101814571B (zh) | 2013-11-27 |
JP2010226093A (ja) | 2010-10-07 |
EP2221868A2 (en) | 2010-08-25 |
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EP2221868B1 (en) | 2014-01-08 |
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