TWI463774B - 用於產生一輸出電壓之電荷幫浦電路及方法 - Google Patents

用於產生一輸出電壓之電荷幫浦電路及方法 Download PDF

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TWI463774B
TWI463774B TW097148610A TW97148610A TWI463774B TW I463774 B TWI463774 B TW I463774B TW 097148610 A TW097148610 A TW 097148610A TW 97148610 A TW97148610 A TW 97148610A TW I463774 B TWI463774 B TW I463774B
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voltage
capacitor
series
plate
charge pump
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TW200937819A (en
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Feng Pan
Jonathan H Huynh
Qui Vi Nguyen
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Sandisk Technologies Inc
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Description

用於產生一輸出電壓之電荷幫浦電路及方法
本發明一般而言係關於電荷幫浦之領域，且更特定言之，係關於一種具有相對低輸出電壓、高功率效率及較高電流需求之電荷幫浦。
電荷幫浦使用一切換過程來提供一大於其DC輸入電壓之DC輸出電壓。一般而言，一電荷幫浦將具有一電容器，該電容器耦合至一輸入與一輸出之間的開關。在一個時鐘半週期期間，即充電半週期期間，該電容器並聯耦合至該輸入，以便充電至輸入電壓。在一第二時鐘週期期間，即轉移半週期期間，已充電電容器與輸入電壓串聯耦合，以便提供一兩倍於輸入電壓位準之輸出電壓。此過程圖解闡釋於圖1A及1B中。於圖1A中，使電容器5與輸入電壓VIN 並聯配置，以圖解闡釋該充電半週期。於圖1B中，使已充電電容器5與該輸入電壓串聯配置，以圖解闡釋轉移半週期。因而，如在圖1B中所見，已充電電容器5之正極端子相對於接地將係2*VIN 。
電荷幫浦用於許多場合中。舉例而言，電荷幫浦用作快閃及其他非揮發性記憶體上之周邊電路，以自一較低電源電壓產生許多所需之運作電壓(諸如程式化或抹除電壓)。此項技術中已習知若干電荷幫浦設計，諸如習用之Dickson型幫浦。但鑒於對電荷幫浦之共同依賴，需要對幫浦設計之持續改良，特別在儘量減少幫浦之佈局面積量及電流消耗需求方面。
闡述了一種用於產生一輸出電壓之電荷幫浦。該電荷幫浦具有多個電容器以及切換電路。在一第一或初始化階段及一第二或轉移階段中，該等電容器可交替地連接。在該第一階段中，該等電容器中之每一者之第一板經連接以接收一調整器電壓而每一電容器之第二板接地。在該第二階段中，該等電容器串聯連接，其中，對於第一電容器之後的每一電容器而言，第二板連接至該串聯中前一電容器之第一板。該幫浦之輸出電壓來自該串聯中最末電容器之第一板。調整電路自一參考電壓產生一調整器電壓使其具有回應於該幫浦之輸出電壓位準之值。
本發明之各種態樣、優點、特徵及實施例包含於下文對本發明實例性實例之說明中，應結合附圖一起閱讀該說明。本文出於各種目的所參考之所有專利、專利申請案、論文、其他公開案、文檔等等皆以全文引用的方式併入本文中。若所併入之公開案、文檔或諸如此類中任一者與本申請案之間存在術語之定義或使用之任何不一致或衝突，則應以本申請案之定義或使用為准。
本文所提供之電荷幫浦尤其適合其中高效率、最小佈局面積需求及高電流能力係較佳之應用。實例性實施例適合提供3V至6.5V之範圍中之輸出，其具有高輸出電流能力，但卻需要比先前技術中現存佈局面積及電流消耗更小之佈局面積及電流消耗。作為實例，所述設計之一應用係用作一非揮發性記憶體電路上之周邊電路。
通常可在(舉例而言)Pan及Samaddar,McGraw-Hill,2006之"電荷幫浦電路設計"或Pylarinos及Rogers,Department of Electrical and Computer Engineering University of Toronto之"電荷幫浦：概述"(可在網頁"www.eecg.toronto.edu/~kphang/ece1371/chargepumps.pdf"上看到)中找到更多關於先前技術電荷幫浦(諸如Dickenson型幫浦及電荷幫浦)之資訊。可在以下專利及申請案中找到關於各種其他電荷幫浦態樣及設計之更詳盡資訊：美國專利第5,436,587、6,370,075、6,922,096及7,135,910號；以及申請於2004年5月10日之第10/842,910號、申請於2005年12月6日之第11/295,906號、申請於2005年12月16日之第11/303,387號、申請於2006年7月31日之第11/497,465號、申請於2006年9月19日之第11/523,875號；以及兩者皆申請於2007年8月28日之第11/845,903及11/845,939號申請案。
圖2係一典型電荷幫浦配置之一頂部位階方塊圖。本文所述設計與先前技術在幫浦區段201之細節上不同。如圖2中所示，幫浦201具有作為輸入之一時鐘信號及一電壓Vreg，並提供一輸出Vout。未明確顯示高(Vdd)及低(接地)連接。電壓Vreg由調整器203提供，該調整器具有作為輸入之一來自一外部電壓源之參考電壓Vref及輸出電壓Vout。調整器區塊203調整Vreg之值，以便獲得所期望之Vout的值。幫浦區段201通常將具有交叉耦合之元件，諸如下文對該等實例性實施例之闡述。(當包含一調整器時，一電荷幫浦通常被視為幫浦部分201及調整器203兩者，但在某些用法中，"電荷幫浦"僅指幫浦區段201。)
Vref係一固定參考值，諸如由帶隙產生器(未顯示)提供之一(比如說)1.2伏之電壓或由其他外部電壓供應源提供。Clock_High係一至幫浦201之時鐘(未顯示)輸入。Clock_High(φ)之"1"電壓位準較佳應係足夠高以最小化跨越用於電荷轉移之開關之降低。
圖3A、3B及4A、4B顯示一對實例性實施例。於兩種情形中，在轉移階段或模式中，若干電容器(N,此論述中視為N=3)係串聯連接，而在初始化階段或模式中，每一電容器連接於低電壓位準(通常為接地)與調整器電壓之間。該調整器電壓係基於回饋提供自一調整器電路且可用於控制內部級節點之每一者上之預充電。
圖3A及3B分別顯示一電荷幫浦之一第一實施例之初始化階段及轉移階段。此實例中所示級之數量N為N=3，此乃因此係方便的，但應理解，亦可使用其他適當之數量。針對圖3A之初始化階段，將每一電容器(C1 311、C2 313、C3 315)之"底"板設定為0V而將"頂"板重設為一基於經調整電壓Vreg之位準。調整器303將供應Vreg，其中僅示意性地顯示了欲基於時鐘信號CLK達成此之開關。可藉由此項技術中之習知技術來實施該等開關及該調整器電路兩者。
圖3B中顯示第二運作階段或轉移階段。現在，將N個級串聯連接於來自電壓供應之Vdd位準與用以供應輸出之輸出節點之間。此輸出亦供應至調整器303以使調整回饋可用於控制內部級節點上之預充電位準(如根據圖3A之闡述)，而時鐘可以Vdd位準恆定地運行。該輸出隨後升壓至Vout=N*K*Vreg＋Vdd，K係一基於運作中電荷共享效率之因子。此係忽略跨越開關(同樣僅係示意性地指示)之任何降低之理想位準。較佳地，該等開關由一位準驅動以最小化來自該等開關之任何降低。在初始化階段期間，藉由使用一調整電壓來對頂板進行預充電而不是僅將Vdd施加至該頂板，可獲得一經調整輸出，同時達成圖3B之串聯配置之高功率效率及高電流需求。
圖4A及4B分別顯示一電荷幫浦之一替代實施例之初始化階段及轉移階段。各種元件與圖3A及3B之元件標記類似且功能類似。原理區別係該調整回饋現在可用於控制內部級節點上之預充電位準以及時鐘振幅。在圖4B之轉移階段中，現在將該等電容器串聯連接於Vreg(而不是Vdd)與輸出節點之間。因此，現在該輸出電壓(理想地)升壓至高達Vout=N*K*Vreg＋Vreg。此允許所有輸出電壓由來自調整器電路403之回饋來調整。
儘管針對產生一正電壓輸出之情形闡述了圖3A、3B及4A、4B之配置，但可使用一類似配置來產生負電壓。更具體而言，此可藉由(大體而言)將圖3A、3B及4A、4B之實施例相對於其各種連接"上下倒置"並使用一對應負調整電壓而達成。
儘管本文已參照特定實施例闡述了本發明，但該說明僅係本發明應用之一實例而不應被視為對本發明應用之一限制。因此，對所揭示實施例之特徵之各種修訂及組合歸屬於下文申請專利範圍所涵蓋之本發明範疇內。
201．．．幫浦(幫浦區段)
203．．．調整器(調整器區塊)
303．．．調整器
311．．．電容器C1
313．．．電容器C2
315．．．電容器C3
403．．．調整器電路
藉由查閱下列各圖，可更好地理解本發明之各種態樣及特徵，圖中：
圖1A係一泛用電荷幫浦中充電半週期之一簡化電路圖。
圖1B係一泛用電荷幫浦中轉移半週期之一簡化電路圖。
圖2係一所調整電荷幫浦之一頂部位階方塊圖。
圖3A及3B顯示一第一電荷幫浦實施例之初始化及轉移模式。
圖4A及4B顯示一替代電荷幫浦實施例之初始化及轉移模式。
303．．．調整器
311．．．電容器C1
313．．．電容器C2
315．．．電容器C3

Claims (7)

  1. 一種用以產生一輸出電壓之電荷幫浦電路，其包含：複數個電容器，每一電容器具有一第一板及一第二板；切換電路，藉此該等電容器可交替地以一第一階段(phase)及一第二階段連接，在該第一階段中，該等電容器之每一者的該第一板經連接以接收一調整器電壓且該等電容器之每一者的該第二板接地，而在該第二階段中，該等電容器串聯連接以使得該串聯中第一電容器之後的每一電容器之該第二板連接至該串聯中前一電容器之該第一板，而該串聯中最末電容器之該第一板經連接以供應該電荷幫浦電路之該輸出電壓；及調整電路，其可連接以接收一參考電壓及來自電荷幫浦之該輸出電壓，且自該參考電壓產生該調整器電壓，其中該調整器電壓值回應於該輸出電壓的值。
  2. 如請求項1之電荷幫浦電路，其中，在該第二階段期間，該串聯中該第一電容器之該第二板藉由該切換電路連接以自一電壓供應接收一電壓。
  3. 如請求項1之電荷幫浦電路，其中，在該第二階段期間，該串聯中該第一電容器之該第二板藉由該切換電路連接以接收該調整器電壓。
  4. 如請求項1之電荷幫浦電路，其中該電荷幫浦電路係形成於一非揮發性記憶體電路上作為一周邊電路元件。
  5. 一種產生一輸出電壓之方法，其包括： 提供複數個電容器，每一電容器具有一第一板及一第二板；以一第一階段及一第二階段交替地連接該等電容器，其中該第一階段包含：連接該等電容器之每一者的該第一板，以接收一調整器電壓；及將該等電容器之每一者的該第二板接地；且該第二階段包含：串聯連接該等電容器，以使得該串聯中第一電容器之後的每一電容器之該第二板連接至該串聯中前一電容器之該第一板；及自該串聯中最末電容器之該第一板供應該輸出電壓；自一參考電壓產生該調整電壓，其中該調整器電壓值回應於該輸出電壓之值。
  6. 如請求項5之方法，該第二階段進一步包括：連接該串聯中的該第一電容器，以自一電壓供應接收一電壓。
  7. 如請求項5之方法，該第二階段進一步包括：連接該串聯中的該第一電容器，以接收該調整器電壓。
TW097148610A 2007-12-12 2008-12-12 用於產生一輸出電壓之電荷幫浦電路及方法 TWI463774B (zh)

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Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880531B2 (en) * 2008-01-23 2011-02-01 Micron Technology, Inc. System, apparatus, and method for selectable voltage regulation
US7969235B2 (en) 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US8710907B2 (en) * 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US7973592B2 (en) * 2009-07-21 2011-07-05 Sandisk Corporation Charge pump with current based regulation
US8339183B2 (en) * 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US20110148509A1 (en) 2009-12-17 2011-06-23 Feng Pan Techniques to Reduce Charge Pump Overshoot
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8106701B1 (en) 2010-09-30 2012-01-31 Sandisk Technologies Inc. Level shifter with shoot-through current isolation
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
US8537593B2 (en) 2011-04-28 2013-09-17 Sandisk Technologies Inc. Variable resistance switch suitable for supplying high voltage to drive load
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
US8395434B1 (en) 2011-10-05 2013-03-12 Sandisk Technologies Inc. Level shifter with negative voltage capability
US8730722B2 (en) 2012-03-02 2014-05-20 Sandisk Technologies Inc. Saving of data in cases of word-line to word-line short in memory arrays
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US9810723B2 (en) 2012-09-27 2017-11-07 Sandisk Technologies Llc Charge pump based over-sampling ADC for current detection
US9164526B2 (en) 2012-09-27 2015-10-20 Sandisk Technologies Inc. Sigma delta over-sampling charge pump analog-to-digital converter
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9165683B2 (en) 2013-09-23 2015-10-20 Sandisk Technologies Inc. Multi-word line erratic programming detection
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
US9653126B2 (en) 2014-01-27 2017-05-16 Sandisk Technologies Llc Digital ramp rate control for charge pumps
US9484086B2 (en) 2014-07-10 2016-11-01 Sandisk Technologies Llc Determination of word line to local source line shorts
US9460809B2 (en) 2014-07-10 2016-10-04 Sandisk Technologies Llc AC stress mode to screen out word line to word line shorts
US9514835B2 (en) 2014-07-10 2016-12-06 Sandisk Technologies Llc Determination of word line to word line shorts between adjacent blocks
US9443612B2 (en) 2014-07-10 2016-09-13 Sandisk Technologies Llc Determination of bit line to low voltage signal shorts
US9330776B2 (en) 2014-08-14 2016-05-03 Sandisk Technologies Inc. High voltage step down regulator with breakdown protection
US9202593B1 (en) 2014-09-02 2015-12-01 Sandisk Technologies Inc. Techniques for detecting broken word lines in non-volatile memories
US9240249B1 (en) 2014-09-02 2016-01-19 Sandisk Technologies Inc. AC stress methods to screen out bit line defects
US9449694B2 (en) 2014-09-04 2016-09-20 Sandisk Technologies Llc Non-volatile memory with multi-word line select for defect detection operations
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9659666B2 (en) 2015-08-31 2017-05-23 Sandisk Technologies Llc Dynamic memory recovery at the sub-block level
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
CN105529917A (zh) * 2016-01-21 2016-04-27 中山芯达电子科技有限公司 一种高效率快速电压发生电路
US9698676B1 (en) 2016-03-11 2017-07-04 Sandisk Technologies Llc Charge pump based over-sampling with uniform step size for current detection
US10715037B2 (en) 2016-08-05 2020-07-14 The University Of Hong Kong High-efficiency switched-capacitor power supplies and methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596532A (en) * 1995-10-18 1997-01-21 Sandisk Corporation Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range
US5625544A (en) * 1996-04-25 1997-04-29 Programmable Microelectronics Corp. Charge pump
US5969565A (en) * 1996-05-17 1999-10-19 Nec Corporation Voltage booster circuit
US6018264A (en) * 1998-02-11 2000-01-25 Lg Semicon Co., Ltd. Pumping circuit with amplitude limited to prevent an over pumping for semiconductor device
JP2007020268A (ja) * 2005-07-06 2007-01-25 Casio Comput Co Ltd 電源回路

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697860A (en) 1971-03-15 1972-10-10 Westinghouse Electric Corp Dc static switch circuit with a main switch device and a power sharing circuit portion
US4511811A (en) 1982-02-08 1985-04-16 Seeq Technology, Inc. Charge pump for providing programming voltage to the word lines in a semiconductor memory array
US4583157A (en) 1985-02-08 1986-04-15 At&T Bell Laboratories Integrated circuit having a variably boosted node
US4636748A (en) 1985-06-26 1987-01-13 Data General Corporation Charge pump for use in a phase-locked loop
US4736121A (en) 1985-09-10 1988-04-05 Sos Microelettronica S.p.A. Charge pump circuit for driving N-channel MOS transistors
US4888738A (en) 1988-06-29 1989-12-19 Seeq Technology Current-regulated, voltage-regulated erase circuit for EEPROM memory
US5392205A (en) 1991-11-07 1995-02-21 Motorola, Inc. Regulated charge pump and method therefor
US5436587A (en) 1993-11-24 1995-07-25 Sundisk Corporation Charge pump circuit with exponetral multiplication
US5508971A (en) 1994-10-17 1996-04-16 Sandisk Corporation Programmable power generation circuit for flash EEPROM memory systems
US5563779A (en) 1994-12-05 1996-10-08 Motorola, Inc. Method and apparatus for a regulated supply on an integrated circuit
DE19612443C2 (de) 1996-03-28 1998-02-05 Siemens Ag Schaltungsanordnung zur Versorgung eines elektronischen Lastkreises
US5818288A (en) 1996-06-27 1998-10-06 Advanced Micro Devices, Inc. Charge pump circuit having non-uniform stage capacitance for providing increased rise time and reduced area
US5818289A (en) 1996-07-18 1998-10-06 Micron Technology, Inc. Clocking scheme and charge transfer switch for increasing the efficiency of a charge pump or other circuit
US6023187A (en) 1997-12-23 2000-02-08 Mitsubishi Semiconductor America, Inc. Voltage pump for integrated circuit and operating method thereof
US6606267B2 (en) 1998-06-23 2003-08-12 Sandisk Corporation High data rate write process for non-volatile flash memories
US5969986A (en) 1998-06-23 1999-10-19 Invox Technology High-bandwidth read and write architectures for non-volatile memories
KR100292565B1 (ko) 1998-04-09 2001-06-01 니시무로 타이죠 내부 전압 발생 회로와 반도체 메모리
US6344959B1 (en) 1998-05-01 2002-02-05 Unitrode Corporation Method for sensing the output voltage of a charge pump circuit without applying a load to the output stage
EP0971361B1 (en) 1998-06-23 2003-12-10 SanDisk Corporation High data rate write process for non-volatile flash memories
US6208542B1 (en) 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
US6249898B1 (en) 1998-06-30 2001-06-19 Synopsys, Inc. Method and system for reliability analysis of CMOS VLSI circuits based on stage partitioning and node activities
US6198645B1 (en) * 1998-07-02 2001-03-06 National Semiconductor Corporation Buck and boost switched capacitor gain stage with optional shared rest state
JP3237654B2 (ja) 1999-05-19 2001-12-10 日本電気株式会社 半導体装置
US6169444B1 (en) 1999-07-15 2001-01-02 Maxim Integrated Products, Inc. Pulse frequency operation of regulated charge pumps
JP2001075536A (ja) 1999-09-03 2001-03-23 Nec Corp 昇圧回路、電源回路及び液晶駆動装置
TW578377B (en) * 2000-05-10 2004-03-01 Sanyo Electric Co Charge-pump circuit and method for controlling the same
EP1184962B1 (en) 2000-08-22 2006-05-17 STMicroelectronics S.r.l. High efficiency electronic circuit for generating and regulating a supply voltage
US6525949B1 (en) 2000-12-22 2003-02-25 Matrix Semiconductor, Inc. Charge pump circuit
US6577535B2 (en) 2001-02-16 2003-06-10 Sandisk Corporation Method and system for distributed power generation in multi-chip memory systems
US6486728B2 (en) 2001-03-16 2002-11-26 Matrix Semiconductor, Inc. Multi-stage charge pump
JP2002315308A (ja) * 2001-04-10 2002-10-25 Fujitsu Ltd Ｄｃ−ｄｃコンバータ及び記憶装置
US6424570B1 (en) 2001-06-26 2002-07-23 Advanced Micro Devices, Inc. Modulated charge pump with uses an analog to digital converter to compensate for supply voltage variations
JP4152094B2 (ja) 2001-09-03 2008-09-17 エルピーダメモリ株式会社 半導体記憶装置の制御方法及び半導体記憶装置
JP3557186B2 (ja) * 2001-09-26 2004-08-25 三洋電機株式会社 Ｄｃ−ｄｃコンバータ
JP4222768B2 (ja) 2002-03-27 2009-02-12 三洋電機株式会社 昇圧装置及びこれを用いた撮像装置
US6861894B2 (en) 2002-09-27 2005-03-01 Sandisk Corporation Charge pump with Fibonacci number multiplication
ITMI20022268A1 (it) 2002-10-25 2004-04-26 Atmel Corp Circuito pompa di cariche variabile con carico dinamico
US6975135B1 (en) 2002-12-10 2005-12-13 Altera Corporation Universally programmable output buffer
US6734718B1 (en) 2002-12-23 2004-05-11 Sandisk Corporation High voltage ripple reduction
US6891764B2 (en) 2003-04-11 2005-05-10 Intel Corporation Apparatus and method to read a nonvolatile memory
US7023260B2 (en) 2003-06-30 2006-04-04 Matrix Semiconductor, Inc. Charge pump circuit incorporating corresponding parallel charge pump stages and method therefor
FR2858725B1 (fr) 2003-08-06 2005-10-07 St Microelectronics Sa Dispositif autoreparable pour generer une haute tension, et procede de reparation d'un dispositif pour generer une haute tension.
US6922096B2 (en) 2003-08-07 2005-07-26 Sandisk Corporation Area efficient charge pump
US6859091B1 (en) 2003-09-18 2005-02-22 Maxim Integrated Products, Inc. Continuous linear regulated zero dropout charge pump with high efficiency load predictive clocking scheme
US7030683B2 (en) 2004-05-10 2006-04-18 Sandisk Corporation Four phase charge pump operable without phase overlap with improved efficiency
JP2006158132A (ja) 2004-11-30 2006-06-15 Renesas Technology Corp チャージポンプ方式電源回路
GB2434675B (en) 2004-11-30 2010-01-06 Spansion Japan Ltd Semiconductor device and semiconductor control method
US7120051B2 (en) 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
TWI298828B (en) 2005-06-29 2008-07-11 Novatek Microelectronics Corp Charge pump for generating arbitrary voltage level
US7276960B2 (en) 2005-07-18 2007-10-02 Dialog Semiconductor Gmbh Voltage regulated charge pump with regulated charge current into the flying capacitor
US20070126494A1 (en) 2005-12-06 2007-06-07 Sandisk Corporation Charge pump having shunt diode for improved operating efficiency
US20070139099A1 (en) 2005-12-16 2007-06-21 Sandisk Corporation Charge pump regulation control for improved power efficiency
US7372320B2 (en) 2005-12-16 2008-05-13 Sandisk Corporation Voltage regulation with active supplemental current for output stabilization
JP4855084B2 (ja) * 2006-01-25 2012-01-18 ローム株式会社 電源装置及びこれを用いた電気機器
US7397677B1 (en) 2006-02-08 2008-07-08 National Semiconductor Corporation Apparatus and method for charge pump control with adjustable series resistance
US20070229149A1 (en) 2006-03-30 2007-10-04 Sandisk Corporation Voltage regulator having high voltage protection
US7554311B2 (en) 2006-07-31 2009-06-30 Sandisk Corporation Hybrid charge pump regulation
US7477092B2 (en) 2006-12-29 2009-01-13 Sandisk Corporation Unified voltage generation apparatus with improved power efficiency
US7440342B2 (en) 2006-12-29 2008-10-21 Sandisk Corporation Unified voltage generation method with improved power efficiency
US7515488B2 (en) 2007-03-30 2009-04-07 Sandisk 3D Llc Method for load-based voltage generation
US7558129B2 (en) 2007-03-30 2009-07-07 Sandisk 3D Llc Device with load-based voltage generation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5596532A (en) * 1995-10-18 1997-01-21 Sandisk Corporation Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range
US5625544A (en) * 1996-04-25 1997-04-29 Programmable Microelectronics Corp. Charge pump
US5969565A (en) * 1996-05-17 1999-10-19 Nec Corporation Voltage booster circuit
US6018264A (en) * 1998-02-11 2000-01-25 Lg Semicon Co., Ltd. Pumping circuit with amplitude limited to prevent an over pumping for semiconductor device
JP2007020268A (ja) * 2005-07-06 2007-01-25 Casio Comput Co Ltd 電源回路

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US7586362B2 (en) 2009-09-08
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