TWI457971B - Plasma processing method - Google Patents

Plasma processing method Download PDF

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Publication number
TWI457971B
TWI457971B TW101104031A TW101104031A TWI457971B TW I457971 B TWI457971 B TW I457971B TW 101104031 A TW101104031 A TW 101104031A TW 101104031 A TW101104031 A TW 101104031A TW I457971 B TWI457971 B TW I457971B
Authority
TW
Taiwan
Prior art keywords
plasma
gas
etching
cleaned
magnetic film
Prior art date
Application number
TW101104031A
Other languages
English (en)
Chinese (zh)
Other versions
TW201324575A (zh
Inventor
阿部高廣
島田剛
吉田篤
山田健太郎
藤田大介
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201324575A publication Critical patent/TW201324575A/zh
Application granted granted Critical
Publication of TWI457971B publication Critical patent/TWI457971B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
TW101104031A 2011-12-07 2012-02-08 Plasma processing method TWI457971B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011267454A JP5783890B2 (ja) 2011-12-07 2011-12-07 プラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201324575A TW201324575A (zh) 2013-06-16
TWI457971B true TWI457971B (zh) 2014-10-21

Family

ID=48571028

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101104031A TWI457971B (zh) 2011-12-07 2012-02-08 Plasma processing method

Country Status (4)

Country Link
US (1) US8591752B2 (https=)
JP (1) JP5783890B2 (https=)
KR (1) KR101266053B1 (https=)
TW (1) TWI457971B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5887366B2 (ja) * 2013-03-26 2016-03-16 東京エレクトロン株式会社 遷移金属を含む膜をエッチングする方法
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6499980B2 (ja) * 2016-01-04 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10453925B2 (en) 2016-01-29 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth methods and structures thereof
WO2017213193A1 (ja) * 2016-06-10 2017-12-14 東京エレクトロン株式会社 銅層をエッチングする方法
JP6745199B2 (ja) * 2016-06-10 2020-08-26 東京エレクトロン株式会社 銅層をエッチングする方法
JP7241627B2 (ja) * 2019-07-05 2023-03-17 東京エレクトロン株式会社 クリーニング方法及びプラズマ処理装置
CN110491759A (zh) * 2019-08-21 2019-11-22 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统
TWI850909B (zh) * 2022-03-18 2024-08-01 日商國際電氣股份有限公司 氣體清潔方法、半導體裝置之製造方法、基板處理方法、程式及基板處理裝置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030138619A1 (en) * 2001-12-14 2003-07-24 3M Innovative Properties Company Plasma treatment of porous materials
KR20030085879A (ko) * 2002-05-02 2003-11-07 삼성전자주식회사 반도체소자 제조용 건식식각장치의 세정방법
TW200919580A (en) * 2007-07-11 2009-05-01 Sosul Co Ltd Plasma etching equipment and method of etching a wafer
JP2010168663A (ja) * 2010-03-26 2010-08-05 Canon Anelva Corp プラズマ処理装置
TW201115803A (en) * 2009-05-27 2011-05-01 Canon Anelva Corp Process and apparatus for fabricating magnetic device
CN102224610A (zh) * 2009-01-21 2011-10-19 佳能安内华股份有限公司 磁性膜加工室的清洁方法、磁性器件的制造方法及基板处理设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012515A (ja) 1998-06-22 2000-01-14 Hitachi Ltd マイクロ波プラズマエッチング装置のプラズマクリーニング方法
JP2002359234A (ja) 2001-06-01 2002-12-13 Hitachi Ltd プラズマ処理方法
JP3630666B2 (ja) * 2002-02-15 2005-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20040200498A1 (en) * 2003-04-08 2004-10-14 Applied Materials, Inc. Method and apparatus for cleaning a substrate processing chamber
TWI249789B (en) * 2004-04-23 2006-02-21 United Microelectronics Corp Two-step stripping method for removing via photoresist during the fabrication of partial-via dual damascene structures
JP4418300B2 (ja) * 2004-05-25 2010-02-17 株式会社日立製作所 記録媒体作製方法とこれを用いた記録媒体及び情報記録再生装置
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR101630234B1 (ko) * 2009-11-17 2016-06-15 주성엔지니어링(주) 공정챔버의 세정방법
JP2013051227A (ja) * 2011-08-30 2013-03-14 Hitachi High-Technologies Corp プラズマエッチング方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030138619A1 (en) * 2001-12-14 2003-07-24 3M Innovative Properties Company Plasma treatment of porous materials
KR20030085879A (ko) * 2002-05-02 2003-11-07 삼성전자주식회사 반도체소자 제조용 건식식각장치의 세정방법
TW200919580A (en) * 2007-07-11 2009-05-01 Sosul Co Ltd Plasma etching equipment and method of etching a wafer
CN102224610A (zh) * 2009-01-21 2011-10-19 佳能安内华股份有限公司 磁性膜加工室的清洁方法、磁性器件的制造方法及基板处理设备
TW201115803A (en) * 2009-05-27 2011-05-01 Canon Anelva Corp Process and apparatus for fabricating magnetic device
JP2010168663A (ja) * 2010-03-26 2010-08-05 Canon Anelva Corp プラズマ処理装置

Also Published As

Publication number Publication date
KR101266053B1 (ko) 2013-05-21
US8591752B2 (en) 2013-11-26
US20130146563A1 (en) 2013-06-13
JP2013120810A (ja) 2013-06-17
JP5783890B2 (ja) 2015-09-24
TW201324575A (zh) 2013-06-16

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