KR101266053B1 - 플라즈마 처리 방법 - Google Patents

플라즈마 처리 방법 Download PDF

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Publication number
KR101266053B1
KR101266053B1 KR1020120007301A KR20120007301A KR101266053B1 KR 101266053 B1 KR101266053 B1 KR 101266053B1 KR 1020120007301 A KR1020120007301 A KR 1020120007301A KR 20120007301 A KR20120007301 A KR 20120007301A KR 101266053 B1 KR101266053 B1 KR 101266053B1
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South Korea
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plasma
gas
etching
magnetic film
plasma cleaning
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English (en)
Korean (ko)
Inventor
다카히로 아베
다케시 시마다
아츠시 요시다
겐타로 야마다
다이스케 후지타
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020120007301A 2011-12-07 2012-01-25 플라즈마 처리 방법 Active KR101266053B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011267454A JP5783890B2 (ja) 2011-12-07 2011-12-07 プラズマ処理方法
JPJP-P-2011-267454 2011-12-07

Publications (1)

Publication Number Publication Date
KR101266053B1 true KR101266053B1 (ko) 2013-05-21

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ID=48571028

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KR1020120007301A Active KR101266053B1 (ko) 2011-12-07 2012-01-25 플라즈마 처리 방법

Country Status (4)

Country Link
US (1) US8591752B2 (https=)
JP (1) JP5783890B2 (https=)
KR (1) KR101266053B1 (https=)
TW (1) TWI457971B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170081554A (ko) * 2016-01-04 2017-07-12 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 방법
KR20190017889A (ko) * 2016-06-10 2019-02-20 도쿄엘렉트론가부시키가이샤 구리층을 에칭하는 방법
KR20210004865A (ko) * 2019-07-05 2021-01-13 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 플라즈마 처리 장치

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5887366B2 (ja) * 2013-03-26 2016-03-16 東京エレクトロン株式会社 遷移金属を含む膜をエッチングする方法
JP6227483B2 (ja) * 2014-05-30 2017-11-08 株式会社日立ハイテクノロジーズ プラズマ処理方法
US10453925B2 (en) 2016-01-29 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth methods and structures thereof
WO2017213193A1 (ja) * 2016-06-10 2017-12-14 東京エレクトロン株式会社 銅層をエッチングする方法
CN110491759A (zh) * 2019-08-21 2019-11-22 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统
TWI850909B (zh) * 2022-03-18 2024-08-01 日商國際電氣股份有限公司 氣體清潔方法、半導體裝置之製造方法、基板處理方法、程式及基板處理裝置

Citations (1)

* Cited by examiner, † Cited by third party
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WO2010084909A1 (ja) * 2009-01-21 2010-07-29 キヤノンアネルバ株式会社 磁性膜加工チャンバのクリーニング方法、磁性素子の製造方法、および基板処理装置

Family Cites Families (14)

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JP2000012515A (ja) 1998-06-22 2000-01-14 Hitachi Ltd マイクロ波プラズマエッチング装置のプラズマクリーニング方法
JP2002359234A (ja) 2001-06-01 2002-12-13 Hitachi Ltd プラズマ処理方法
US6878419B2 (en) 2001-12-14 2005-04-12 3M Innovative Properties Co. Plasma treatment of porous materials
JP3630666B2 (ja) * 2002-02-15 2005-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR20030085879A (ko) * 2002-05-02 2003-11-07 삼성전자주식회사 반도체소자 제조용 건식식각장치의 세정방법
US20040200498A1 (en) * 2003-04-08 2004-10-14 Applied Materials, Inc. Method and apparatus for cleaning a substrate processing chamber
TWI249789B (en) * 2004-04-23 2006-02-21 United Microelectronics Corp Two-step stripping method for removing via photoresist during the fabrication of partial-via dual damascene structures
JP4418300B2 (ja) * 2004-05-25 2010-02-17 株式会社日立製作所 記録媒体作製方法とこれを用いた記録媒体及び情報記録再生装置
JP4764028B2 (ja) * 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
WO2009008659A2 (en) * 2007-07-11 2009-01-15 Sosul Co., Ltd. Plasma etching apparatus and method of etching wafer
US20100304504A1 (en) * 2009-05-27 2010-12-02 Canon Anelva Corporation Process and apparatus for fabricating magnetic device
KR101630234B1 (ko) * 2009-11-17 2016-06-15 주성엔지니어링(주) 공정챔버의 세정방법
JP2010168663A (ja) * 2010-03-26 2010-08-05 Canon Anelva Corp プラズマ処理装置
JP2013051227A (ja) * 2011-08-30 2013-03-14 Hitachi High-Technologies Corp プラズマエッチング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010084909A1 (ja) * 2009-01-21 2010-07-29 キヤノンアネルバ株式会社 磁性膜加工チャンバのクリーニング方法、磁性素子の製造方法、および基板処理装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170081554A (ko) * 2016-01-04 2017-07-12 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 방법
US9972776B2 (en) 2016-01-04 2018-05-15 Hitachi High-Technologies Corporations Plasma processing method
KR101903432B1 (ko) * 2016-01-04 2018-10-04 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 방법
KR20190017889A (ko) * 2016-06-10 2019-02-20 도쿄엘렉트론가부시키가이샤 구리층을 에칭하는 방법
KR102459874B1 (ko) * 2016-06-10 2022-10-27 도쿄엘렉트론가부시키가이샤 구리층을 에칭하는 방법
KR20210004865A (ko) * 2019-07-05 2021-01-13 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 플라즈마 처리 장치
KR102890637B1 (ko) 2019-07-05 2025-11-24 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 플라즈마 처리 장치

Also Published As

Publication number Publication date
US8591752B2 (en) 2013-11-26
US20130146563A1 (en) 2013-06-13
JP2013120810A (ja) 2013-06-17
TWI457971B (zh) 2014-10-21
JP5783890B2 (ja) 2015-09-24
TW201324575A (zh) 2013-06-16

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