TWI456549B - 閘極驅動電路 - Google Patents

閘極驅動電路 Download PDF

Info

Publication number
TWI456549B
TWI456549B TW100132798A TW100132798A TWI456549B TW I456549 B TWI456549 B TW I456549B TW 100132798 A TW100132798 A TW 100132798A TW 100132798 A TW100132798 A TW 100132798A TW I456549 B TWI456549 B TW I456549B
Authority
TW
Taiwan
Prior art keywords
gate
circuit
voltage
power semiconductor
conversion element
Prior art date
Application number
TW100132798A
Other languages
English (en)
Other versions
TW201250653A (en
Inventor
Masashi Kaneko
Shizuri Tamura
Hiroshi Nakatake
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW201250653A publication Critical patent/TW201250653A/zh
Application granted granted Critical
Publication of TWI456549B publication Critical patent/TWI456549B/zh

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
    • H03K17/04213—Modifications for accelerating switching by feedback from the output circuit to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)

Claims (8)

  1. 一種閘極驅動電路，其係用以驅動功率半導體元件者，該閘極驅動電路包含：定電流閘極驅動電路，其係以固定電流將前述功率半導體元件的閘極電容充電；以及定電壓閘極驅動電路，其係中介轉換元件與電阻的串聯電路而並聯連接於前述定電流閘極驅動電路的輸出入端之間，並以固定電壓將前述閘極電容充電，當驅動前述功率半導體元件時，使用前述定電流閘極驅動電路、以及前述定電壓閘極驅動電路的雙方而將該功率半導體元件的閘極電容充電。
  2. 如申請專利範圍第1項所述之閘極驅動電路，其中前述定電壓閘極驅動電路係具有：第1比較器，其係將前述功率半導體元件的閘極電壓和特定的基準電壓作比較；以及轉換元件控制電路，其係根據前述第1比較器的比較結果而控制前述轉換元件，前述第1比較器係於起動前述功率半導體元件之瞬前，產生將前述轉換元件控制成為不導通(off)的信號，前述轉換元件控制電路係根據自前述第1比較器所輸出的控制信號，將前述轉換元件控制成為不導通，而切離和前述定電壓閘極驅動電路的電性連接。
  3. 如申請專利範圍第2項所述之閘極驅動電路，其中更具備基準電壓產生電路，其係使用流通於前述功率半導體元件的電流而產生前述基準電壓。
  4. 如申請專利範圍第3項所述之閘極驅動電路，其中前述基準電壓產生電路係具備：電流檢測手段，其係用以檢測流通於前述功率半導體元件的電流；第1電源電路，其係用以產生特定的方形波電壓；以及第2比較器，其係將前述電流檢測手段所檢測的電流值和前述方形波電壓作比較，並根據其比較結果，而將輸出電壓作為前述基準電壓而輸出於前述第1比較器。
  5. 如申請專利範圍第1項所述之閘極驅動電路，其中更具有：第2電源電路，其係產生方形波電壓；以及濾波器電路，其係使前述方形波電壓平滑化，同時，前述定電壓閘極驅動電路亦具有：第1比較器，其係將前述濾波器電路所輸出的方形波平滑電壓和特定的基準電壓作比較；以及轉換元件控制電路，其係根據前述第1比較器的比較結果而控制前述轉換元件，前述第1比較器係於起動前述功率半導體元件之瞬前，產生將前述轉換元件控制成為不導通的信號， 前述轉換元件控制電路係根據自前述第1比較器所輸出的控制信號，將前述轉換元件控制成為不導通，而切離和前述定電流閘極驅動電路的電性連接。
  6. 如申請專利範圍第1項至第5項中任意一項所述之閘極驅動電路，其中前述功率半導體元件係由寬能帶間隙半導體所形成的元件。
  7. 如申請專利範圍第6項所述之閘極驅動電路，其中前述寬能帶間隙半導體係使用碳化矽、氮化鎵系材料、或金剛石之半導體。
  8. 一種閘極驅動電路，其係用以驅動功率半導體元件者，該閘極驅動電路包含：定電流閘極驅動電路，其係以固定電流將前述功率半導體元件的閘極電容充電；以及定電壓閘極驅動電路，其係中介轉換元件與電阻的串聯電路而並聯連接於前述定電流閘極驅動電路的輸出入端之間，並以固定電壓將前述閘極電容充電，前述定電壓閘極驅動電路係僅於輸出驅動前述功率半導體元件的導通指令之後至起動該功率半導體元件為止的期間進行驅動。
TW100132798A 2011-06-09 2011-09-13 閘極驅動電路 TWI456549B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/063240 WO2012169041A1 (ja) 2011-06-09 2011-06-09 ゲート駆動回路

Publications (2)

Publication Number Publication Date
TW201250653A TW201250653A (en) 2012-12-16
TWI456549B true TWI456549B (zh) 2014-10-11

Family

ID=46395359

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100132798A TWI456549B (zh) 2011-06-09 2011-09-13 閘極驅動電路

Country Status (7)

Country Link
US (1) US9184739B2 (zh)
JP (1) JP4942861B1 (zh)
KR (1) KR101572747B1 (zh)
CN (1) CN103620930B (zh)
GB (1) GB2505135B (zh)
TW (1) TWI456549B (zh)
WO (1) WO2012169041A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI564499B (zh) * 2015-02-17 2017-01-01 Guest display device

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TR201814652T4 (tr) * 2013-09-25 2018-11-21 Mitsubishi Electric Corp Anahtarlama cihazı, güç dönüştürme cihazı, ve motor tahrik cihazı.
JP5931116B2 (ja) * 2014-04-28 2016-06-08 三菱電機株式会社 ゲート駆動回路
JP5950961B2 (ja) * 2014-04-28 2016-07-13 三菱電機株式会社 ゲート駆動回路
CN106664085B (zh) * 2014-07-03 2019-10-22 三菱电机株式会社 绝缘栅型功率半导体元件的栅极驱动电路
JP6256230B2 (ja) * 2014-07-10 2018-01-10 株式会社デンソー 駆動装置
JP6528575B2 (ja) * 2015-07-17 2019-06-12 富士電機株式会社 半導体スイッチング装置
KR102276588B1 (ko) 2015-08-25 2021-07-13 한국전자기술연구원 기준전압 가변형 igbt 구동회로
JP6659427B2 (ja) 2016-03-31 2020-03-04 ルネサスエレクトロニクス株式会社 半導体装置
CN108075755B (zh) * 2016-11-11 2021-07-06 台达电子工业股份有限公司 功率模块与其控制方法
CN109997297A (zh) * 2016-11-25 2019-07-09 株式会社电装 栅极驱动装置
KR102657320B1 (ko) * 2016-12-14 2024-04-15 현대자동차주식회사 컨버터 제어 장치
JP6961944B2 (ja) * 2017-01-18 2021-11-05 富士電機株式会社 パワー半導体モジュール
CN107991543B (zh) * 2017-12-18 2024-03-26 深圳芯能半导体技术有限公司 绝缘栅双极型晶体管的栅极电荷量测量电路及其测量方法
US10218258B1 (en) * 2018-01-09 2019-02-26 Dialog Semiconductor (Uk) Limited Apparatus and method for driving a power stage
CN110798052B (zh) * 2018-08-01 2022-02-25 三垦电气株式会社 功率设备的控制装置及方法
JP7338139B2 (ja) * 2018-10-04 2023-09-05 富士電機株式会社 スイッチング制御回路、電源回路
CN111262567B (zh) * 2018-11-30 2023-06-23 株洲中车时代半导体有限公司 一种有源栅极驱动控制电路和控制方法
CN109618440B (zh) * 2019-01-30 2021-12-03 九阳股份有限公司 一种电磁加热控制电路及控制方法
JP7238646B2 (ja) * 2019-07-08 2023-03-14 三菱電機株式会社 駆動回路及び半導体モジュール
CN113054828B (zh) * 2019-12-26 2022-08-16 圣邦微电子（北京）股份有限公司 一种功率开关管的驱动电路以及电源系统
CN111654268B (zh) * 2020-06-24 2023-11-17 长沙丹芬瑞电气技术有限公司 一种碳化硅器件的门极驱动电路及驱动方法
JP7391481B2 (ja) * 2020-11-30 2023-12-05 三菱電機株式会社 駆動回路
DE102021116029A1 (de) 2021-06-21 2022-12-22 Infineon Technologies Ag Hochgeschwindigkeits-gatetreiberschaltung
CN115483814A (zh) * 2022-08-31 2022-12-16 华为数字能源技术有限公司 驱动加速电路及电路系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101335484A (zh) * 2007-06-27 2008-12-31 三菱电机株式会社 栅极驱动装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
DE19633367A1 (de) 1996-08-19 1998-03-26 Siemens Ag Ansteuerschaltung für ein Feldeffekt gesteuertes Halbleiterbauelement
JP2004282806A (ja) 2003-03-12 2004-10-07 Nissan Motor Co Ltd 電圧駆動素子の駆動回路
JP2007228447A (ja) * 2006-02-27 2007-09-06 Hitachi Ltd スイッチング素子のゲート駆動回路
JP5186095B2 (ja) 2006-10-02 2013-04-17 株式会社日立製作所 ゲート駆動回路
WO2008155917A1 (ja) * 2007-06-19 2008-12-24 Panasonic Corporation スイッチング素子駆動回路
JP4991446B2 (ja) 2007-08-23 2012-08-01 日立オートモティブシステムズ株式会社 電力変換装置
US8427225B2 (en) * 2007-10-02 2013-04-23 Mitsubishi Electric Corporation Gate driving circuit
US8299820B2 (en) * 2008-09-30 2012-10-30 Infineon Technologies Austria Ag Circuit including a resistor arrangement for actuation of a transistor
JP5069735B2 (ja) * 2009-10-21 2012-11-07 三菱電機株式会社 電圧駆動型スイッチングデバイスの駆動回路
KR101449083B1 (ko) * 2010-05-06 2014-10-13 엘에스산전 주식회사 스위칭 게이트 드라이브
JP5881477B2 (ja) * 2012-03-06 2016-03-09 三菱電機株式会社 スイッチング素子駆動回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101335484A (zh) * 2007-06-27 2008-12-31 三菱电机株式会社 栅极驱动装置
KR20080114611A (ko) * 2007-06-27 2008-12-31 미쓰비시덴키 가부시키가이샤 게이트 구동 장치
EP2009792A2 (en) * 2007-06-27 2008-12-31 Mitsubishi Electric Corporation Gate drive apparatus
US20090002054A1 (en) * 2007-06-27 2009-01-01 Mitsubishi Electric Corporation Gate drive apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI564499B (zh) * 2015-02-17 2017-01-01 Guest display device

Also Published As

Publication number Publication date
WO2012169041A1 (ja) 2012-12-13
US9184739B2 (en) 2015-11-10
GB201321449D0 (en) 2014-01-22
CN103620930B (zh) 2016-04-06
KR20140007951A (ko) 2014-01-20
US20140055190A1 (en) 2014-02-27
GB2505135A (en) 2014-02-19
JP4942861B1 (ja) 2012-05-30
JPWO2012169041A1 (ja) 2015-02-23
KR101572747B1 (ko) 2015-11-27
GB2505135B (en) 2017-12-20
TW201250653A (en) 2012-12-16
CN103620930A (zh) 2014-03-05

Similar Documents

Publication Publication Date Title
TWI456549B (zh) 閘極驅動電路
JP2010068708A5 (zh)
JP2011167060A5 (zh)
JP2012527178A5 (zh)
JP2009100647A5 (zh)
EP2624429A3 (en) Method of forming a switched mode power supply controller device with an off mode and structure therefor
EP2369729A3 (en) Phase angle measurement of a dimming circuit for a switching power supply
JP2012100522A5 (zh)
JP2016082751A5 (zh)
JP2016514940A5 (zh)
WO2011119355A3 (en) Voltage regulator bypass resistance control
JP2014166135A5 (zh)
JP2013520135A5 (zh)
JP2014036555A5 (zh)
RU2016140573A (ru) Зарядное устройство для различных источников электроэнергии
JP2016163438A5 (zh)
EP2963796A3 (en) Power supply apparatus, control apparatus, and program therefor
WO2013180297A3 (ja) 電力変換回路の制御装置
JP2011200111A5 (zh)
JP2013048508A5 (zh)
JP2016509469A5 (zh)
CN101800467A (zh) 一种开关电源的保护电路
JP2014014213A5 (zh)
JP2012234705A5 (zh)
JP2011008514A5 (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees