TWI456214B - 半導體基板的電氣特性之測定方法 - Google Patents

半導體基板的電氣特性之測定方法 Download PDF

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TWI456214B
TWI456214B TW099111757A TW99111757A TWI456214B TW I456214 B TWI456214 B TW I456214B TW 099111757 A TW099111757 A TW 099111757A TW 99111757 A TW99111757 A TW 99111757A TW I456214 B TWI456214 B TW I456214B
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electrodes
pair
voltage
buffer layer
measuring
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TW099111757A
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TW201043979A (en
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Noboru Fukuhara
Masahiko Hata
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Sumitomo Chemical Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Claims (13)

  1. 一種測定方法，係用以測定具有基底(base)基板、及設於前述基底基板上之緩衝層之半導體基板中之洩漏電流或絕緣破壞電壓之方法者，其具備：在前述緩衝層設置包含電洞注入電極之複數個電極之步驟，該電洞注入電極係由當接受電場施加時注入電洞於前述緩衝層之材料所構成；測定在對於從前述複數個電極選擇之包含至少一個前述電洞注入電極之第1之一對電極施加電壓或電流時，流通於前述第1之一對電極之電流或前述第1之一對電極間之電壓之步驟；及根據流通於前述第1之一對電極之電流或前述第1之一對電極間之電壓，測定前述半導體基板中電洞移動所致之洩漏電流或絕緣破壞電壓之步驟。
  2. 如申請專利範圍第1項之測定方法，其中，復具備：在前述緩衝層設置包含電子注入電極之複數個電極之步驟，該電子注入電極係由當接受電場施加時注入電子於前述緩衝層之材料所構成；測定在對於從前述複數個電極選擇之包含至少一個前述電子注入電極之第2之一對電極施加電壓或電流時，流通於前述第2之一對電極之電流或前述第2之一對電極間之電壓之步驟；及根據流通於前述第2之一對電極之電流或前述第2之一對電極間之電壓，測定前述半導體基板中電子移動所致之洩漏電流或絕緣破壞電壓之步驟。
  3. 如申請專利範圍第1項之測定方法，其中，在測定電洞移動所致之洩漏電流或絕緣破壞電壓之步驟中，將預先規定大小的電流流通於前述第1之一對電極時之前述第1之一對電極中各電極間之電壓，設為電洞移動所致之前述絕緣破壞電壓。
  4. 如申請專利範圍第1項之測定方法，其中，在測定電洞移動所致之洩漏電流或絕緣破壞電壓之步驟中，於前述第1之一對電極間之電壓為預先規定大小時，將流通於前述第1之一對電極之電流的大小設為前述洩漏電流。
  5. 如申請專利範圍第2項之測定方法，其中，前述電洞注入電極係將電洞注入於P型3-5族化合物半導體，而前述電子注入電極係將電子注入於N型3-5族化合物半導體。
  6. 如申請專利範圍第1項之測定方法，其中，前述半導體基板係在前述緩衝層上具備形成場效電晶體之多層半導體層。
  7. 如申請專利範圍第6項之測定方法，其中，復具備將前述多層半導體層之至少一部分去除，而使前述緩衝層之至少一部分表面露出之步驟；在設置包含前述電洞注入電極之複數個電極之步驟中，係於前述露出之前述緩衝層設置包含前述電洞注入電極之複數個電極。
  8. 如申請專利範圍第7項之測定方法，其中，復具備：在前述露出之前述緩衝層設置包含電子注入電極之複數個電極之步驟，該電子注入電極係由當接受電場施加時注入電子於前述緩衝層之材料所構成；測定在對於從前述複數個電極選擇之包含至少一個前述電子注入電極之第2之一對電極間施加電壓或電流時，流通於前述第2之一對電極之電流或前述第2之一對電極間之電壓之步驟；及根據流通於前述第2之一對電極之電流或前述第2之一對電極間之電壓，測定前述半導體基板中電子移動所致之洩漏電流或絕緣破壞電壓之步驟。
  9. 如申請專利範圍第1項之測定方法，其中，在設置包含前述電洞注入電極之複數個電極之步驟中，於前述緩衝層中將包含以形成受子(acceptor)雜質之原子作為構成要素之單體或化合物之材料予以配置於前述緩衝層表面之後，將前述緩衝層加熱。
  10. 如申請專利範圍第2項之測定方法，其中，在設置包含前述電子注入電極之複數個電極之步驟中，於前述緩衝層中將包含以形成施子(donor)雜質之原子作為構成要素之單體或化合物之材料予以配置於前述緩衝層表面之後，將前述緩衝層加熱。
  11. 如申請專利範圍第1項之測定方法，其中，在測定流通於前述第1之一對電極之電流或前述第1之一對電極間之電壓之步驟中，對前述第1之一對電極之間施加直流電壓或直流電流。
  12. 如申請專利範圍第1項之測定方法，其中，前述電洞注入電極係包含AuZn、AuNi、AuCr、Ti/Pt/Au、Ti/WSi中之至少一種。
  13. 一種測定方法，係用以測定半導體基板中之洩漏電流或絕緣破壞電壓之方法，該半導體基板係具有：基底基板；緩衝層，包含設於前述基底基板上之N型3-5族化合物半導體；及多層半導體層，係設於前述緩衝層上，並形成場效電晶體；該測定方法具備：將前述多層半導體層之至少一部分去除，而使前述緩衝層之至少一部分表面露出之步驟；在前述緩衝層設置包含由接受電場施加時注入電子於前述N型3-5族化合物半導體之材料所構成之電子注入電極之複數個電極之步驟；測定在對於從前述複數個電極選擇之包含至少一個前述電子注入電極之一對電極之間施加電壓或電流時，流通於前述一對電極之電流或前述一對電極間之電壓之步驟；及根據流通於前述一對電極之電流或前述一對電極間之電壓，測定前述半導體基板中電子移動所致之洩漏電流或絕緣破壞電壓之步驟。
TW099111757A 2009-04-15 2010-04-15 半導體基板的電氣特性之測定方法 TWI456214B (zh)

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CN105445638B (zh) * 2015-11-18 2018-05-01 武汉理工大学 一种探测雪崩效应的原位装置及其探测方法
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TW201043979A (en) 2010-12-16
KR20120027124A (ko) 2012-03-21
CN102396059A (zh) 2012-03-28
JP5555036B2 (ja) 2014-07-23
US8610450B2 (en) 2013-12-17
US20120032699A1 (en) 2012-02-09
JP2010267956A (ja) 2010-11-25
WO2010119666A1 (ja) 2010-10-21

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