TWI453106B - 奈米尺寸形狀之大面積圖案化技術 - Google Patents
奈米尺寸形狀之大面積圖案化技術 Download PDFInfo
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- TWI453106B TWI453106B TW098138626A TW98138626A TWI453106B TW I453106 B TWI453106 B TW I453106B TW 098138626 A TW098138626 A TW 098138626A TW 98138626 A TW98138626 A TW 98138626A TW I453106 B TWI453106 B TW I453106B
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- Prior art keywords
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- nano
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Links
- 238000000059 patterning Methods 0.000 title claims description 12
- 239000002105 nanoparticle Substances 0.000 title claims description 5
- 239000010410 layer Substances 0.000 claims description 131
- 239000000758 substrate Substances 0.000 claims description 113
- 239000000463 material Substances 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 57
- 238000001459 lithography Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000011241 protective layer Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 230000000994 depressogenic effect Effects 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000002195 soluble material Substances 0.000 claims description 2
- 238000001127 nanoimprint lithography Methods 0.000 claims 3
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000012545 processing Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 15
- 239000002086 nanomaterial Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000012530 fluid Substances 0.000 description 10
- 238000004049 embossing Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000000203 droplet dispensing Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- -1 polymethylpentamethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11423908P | 2008-11-13 | 2008-11-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201026474A TW201026474A (en) | 2010-07-16 |
| TWI453106B true TWI453106B (zh) | 2014-09-21 |
Family
ID=42165606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098138626A TWI453106B (zh) | 2008-11-13 | 2009-11-13 | 奈米尺寸形狀之大面積圖案化技術 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8529778B2 (enExample) |
| EP (1) | EP2344926B1 (enExample) |
| JP (1) | JP5723779B2 (enExample) |
| TW (1) | TWI453106B (enExample) |
| WO (1) | WO2010056349A2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110048518A1 (en) * | 2009-08-26 | 2011-03-03 | Molecular Imprints, Inc. | Nanostructured thin film inorganic solar cells |
| EP2470956B1 (en) * | 2009-08-26 | 2018-02-14 | Molecular Imprints, Inc. | Functional nanoparticles |
| KR101274715B1 (ko) * | 2009-12-22 | 2013-06-12 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판 및 그 제조 방법 |
| EP2529274B1 (en) * | 2010-01-29 | 2014-10-08 | Canon Nanotechnologies, Inc. | Nanoimprint lithography processes for forming nanoparticles |
| NL2006929A (en) * | 2010-08-05 | 2012-02-13 | Asml Netherlands Bv | Imprint lithography. |
| US20120070572A1 (en) * | 2010-09-08 | 2012-03-22 | Molecular Imprints, Inc. | Vapor Delivery System For Use in Imprint Lithography |
| CN103282303A (zh) | 2010-11-05 | 2013-09-04 | 分子制模股份有限公司 | 使用双释放层的功能纳米颗粒的纳米压印光刻形成 |
| US8828297B2 (en) | 2010-11-05 | 2014-09-09 | Molecular Imprints, Inc. | Patterning of non-convex shaped nanostructures |
| TWI400160B (zh) * | 2010-11-18 | 2013-07-01 | Univ Nat Taiwan Science Tech | 應用於微奈米壓印製程之模具 |
| US8938864B2 (en) | 2011-10-28 | 2015-01-27 | D B Industries, Llc | Connector |
| US20130167916A1 (en) * | 2011-12-28 | 2013-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin film photovoltaic cells and methods of forming the same |
| WO2014145036A1 (en) * | 2013-03-15 | 2014-09-18 | The Trustees Of Princeton University | Rapid and sensitive analyte measurement assay |
| CN103018819B (zh) * | 2012-11-09 | 2014-05-21 | 浙江大学 | 基于纳米压印的高分子微纳光纤布拉格光栅制备方法 |
| JP6135119B2 (ja) * | 2012-12-19 | 2017-05-31 | 大日本印刷株式会社 | インプリント方法、インプリント樹脂滴下位置決定方法及びインプリント装置 |
| JP6171424B2 (ja) * | 2013-03-12 | 2017-08-02 | 大日本印刷株式会社 | インプリントモールドの製造方法及び設計方法 |
| TWI637234B (zh) * | 2013-07-12 | 2018-10-01 | 美商佳能奈米科技股份有限公司 | 用於壓印微影術之利用方向性圖案化模板的液滴圖案生成技術 |
| KR101427160B1 (ko) * | 2014-04-07 | 2014-08-07 | 서울과학기술대학교 산학협력단 | 다중 미세 패턴 성형 장치 및 방법 |
| JP6279430B2 (ja) * | 2014-08-21 | 2018-02-14 | 東芝メモリ株式会社 | テンプレート、テンプレート形成方法および半導体装置の製造方法 |
| US10349424B2 (en) * | 2015-11-05 | 2019-07-09 | Gainspan Corporation | Efficient dual-mode operation of a wireless device as an access point and a wireless station of respective WLAN networks |
| US10484954B2 (en) * | 2017-05-10 | 2019-11-19 | Qualcomm Incorporated | Synchronization for wideband coverage enhancement |
| US10609660B2 (en) * | 2017-04-19 | 2020-03-31 | Qualcomm Incorporated | Synchronization for wideband coverage enhancement |
| JP6447657B2 (ja) * | 2017-04-25 | 2019-01-09 | 大日本印刷株式会社 | インプリント樹脂滴下順序決定方法及びインプリント方法 |
| US10942398B1 (en) * | 2017-05-19 | 2021-03-09 | Facebook Technologies, Llc | Continuous liquid crystal alignment patterns for geometric phase optics |
| CN121703985A (zh) * | 2022-01-20 | 2026-03-20 | 奇跃公司 | 具有高折射率抗蚀剂的表面浮雕波导 |
Citations (7)
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| US20040065976A1 (en) * | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability |
| US20040188381A1 (en) * | 2003-03-25 | 2004-09-30 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| US20050260848A1 (en) * | 2004-05-21 | 2005-11-24 | Molecular Imprints, Inc. | Method of forming a recessed structure employing a reverse tone process |
| US20060063277A1 (en) * | 2004-09-21 | 2006-03-23 | Molecular Imprints, Inc. | Method of forming an in-situ recessed structure |
| EP1860501A2 (en) * | 2006-05-25 | 2007-11-28 | Hitachi Global Storage Technologies B. V. | Method for producing high-resolution nano-imprint masters |
| TW200809921A (en) * | 2006-08-07 | 2008-02-16 | Taiwan Semiconductor Mfg | Method of lithography patterning |
| TW200818257A (en) * | 2006-07-06 | 2008-04-16 | Nxp Bv | Imprint lithography |
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| KR100862301B1 (ko) | 2000-07-16 | 2008-10-13 | 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 | 임프린트 리소그래피를 위한 고분해능 오버레이 정렬 방법 및 시스템 |
| EP1352295B1 (en) | 2000-10-12 | 2015-12-23 | Board of Regents, The University of Texas System | Template for room temperature, low pressure micro- and nano-imprint lithography |
| JP3589201B2 (ja) * | 2001-07-02 | 2004-11-17 | Ｔｄｋ株式会社 | 薄膜パターニング方法、薄膜デバイスの製造方法及び薄膜磁気ヘッドの製造方法 |
| US20050064344A1 (en) | 2003-09-18 | 2005-03-24 | University Of Texas System Board Of Regents | Imprint lithography templates having alignment marks |
| US7144539B2 (en) | 2002-04-04 | 2006-12-05 | Obducat Ab | Imprint method and device |
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| US7027156B2 (en) | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
| US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
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| US7378347B2 (en) * | 2002-10-28 | 2008-05-27 | Hewlett-Packard Development Company, L.P. | Method of forming catalyst nanoparticles for nanowire growth and other applications |
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| JP2005150333A (ja) * | 2003-11-14 | 2005-06-09 | Sony Corp | 半導体装置の製造方法 |
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| JP4445538B2 (ja) * | 2007-09-26 | 2010-04-07 | 株式会社東芝 | パターン形成方法 |
| JP2009107128A (ja) * | 2007-10-26 | 2009-05-21 | Hitachi Maxell Ltd | ウェルプレート成形用金型の製造方法、ウェルプレート成形用金型、それを用いたウェルプレート成形方法およびウェルプレート |
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| US8119017B2 (en) * | 2008-06-17 | 2012-02-21 | Hitachi Global Storage Technologies Netherlands B.V. | Method using block copolymers for making a master mold with high bit-aspect-ratio for nanoimprinting patterned magnetic recording disks |
| US20100015270A1 (en) | 2008-07-15 | 2010-01-21 | Molecular Imprints, Inc. | Inner cavity system for nano-imprint lithography |
| US20100095862A1 (en) | 2008-10-22 | 2010-04-22 | Molecular Imprints, Inc. | Double Sidewall Angle Nano-Imprint Template |
| US8877073B2 (en) | 2008-10-27 | 2014-11-04 | Canon Nanotechnologies, Inc. | Imprint lithography template |
| US9122148B2 (en) | 2008-11-03 | 2015-09-01 | Canon Nanotechnologies, Inc. | Master template replication |
-
2009
- 2009-11-12 US US12/616,896 patent/US8529778B2/en active Active
- 2009-11-13 WO PCT/US2009/006113 patent/WO2010056349A2/en not_active Ceased
- 2009-11-13 JP JP2011536331A patent/JP5723779B2/ja active Active
- 2009-11-13 EP EP09756590.7A patent/EP2344926B1/en active Active
- 2009-11-13 TW TW098138626A patent/TWI453106B/zh active
-
2013
- 2013-09-09 US US14/021,463 patent/US20140021167A1/en not_active Abandoned
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040065976A1 (en) * | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method and a mold to arrange features on a substrate to replicate features having minimal dimensional variability |
| US20040188381A1 (en) * | 2003-03-25 | 2004-09-30 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| US20050260848A1 (en) * | 2004-05-21 | 2005-11-24 | Molecular Imprints, Inc. | Method of forming a recessed structure employing a reverse tone process |
| US20060063277A1 (en) * | 2004-09-21 | 2006-03-23 | Molecular Imprints, Inc. | Method of forming an in-situ recessed structure |
| EP1860501A2 (en) * | 2006-05-25 | 2007-11-28 | Hitachi Global Storage Technologies B. V. | Method for producing high-resolution nano-imprint masters |
| TW200818257A (en) * | 2006-07-06 | 2008-04-16 | Nxp Bv | Imprint lithography |
| TW200809921A (en) * | 2006-08-07 | 2008-02-16 | Taiwan Semiconductor Mfg | Method of lithography patterning |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201026474A (en) | 2010-07-16 |
| EP2344926A2 (en) | 2011-07-20 |
| US8529778B2 (en) | 2013-09-10 |
| WO2010056349A3 (en) | 2010-11-11 |
| EP2344926B1 (en) | 2015-07-01 |
| WO2010056349A2 (en) | 2010-05-20 |
| US20100120251A1 (en) | 2010-05-13 |
| US20140021167A1 (en) | 2014-01-23 |
| JP2012508978A (ja) | 2012-04-12 |
| JP5723779B2 (ja) | 2015-05-27 |
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