TWI450799B - Polishing pad and manufacturing method thereof, and manufacturing method of semiconductor device - Google Patents
Polishing pad and manufacturing method thereof, and manufacturing method of semiconductor device Download PDFInfo
- Publication number
- TWI450799B TWI450799B TW100109873A TW100109873A TWI450799B TW I450799 B TWI450799 B TW I450799B TW 100109873 A TW100109873 A TW 100109873A TW 100109873 A TW100109873 A TW 100109873A TW I450799 B TWI450799 B TW I450799B
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- Taiwan
- Prior art keywords
- polishing
- compound
- polishing pad
- bubble
- polyurethane foam
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 23
- -1 alcohol compound Chemical class 0.000 claims description 83
- 229920005830 Polyurethane Foam Polymers 0.000 claims description 56
- 239000011496 polyurethane foam Substances 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 38
- 229920005862 polyol Polymers 0.000 claims description 32
- 125000000524 functional group Chemical group 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 27
- 239000000203 mixture Substances 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 25
- 239000012948 isocyanate Substances 0.000 claims description 19
- 150000002513 isocyanates Chemical class 0.000 claims description 17
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 16
- 229920001187 thermosetting polymer Polymers 0.000 claims description 16
- 238000005187 foaming Methods 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 229920002635 polyurethane Polymers 0.000 claims description 13
- 239000004814 polyurethane Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 150000005846 sugar alcohols Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 57
- 238000003756 stirring Methods 0.000 description 19
- 238000000227 grinding Methods 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 15
- 150000003077 polyols Chemical class 0.000 description 12
- 239000006260 foam Substances 0.000 description 10
- 230000005484 gravity Effects 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 229920000768 polyamine Polymers 0.000 description 7
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 239000004745 nonwoven fabric Substances 0.000 description 6
- 229920000728 polyester Polymers 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 239000004698 Polyethylene Substances 0.000 description 5
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 5
- 229920001610 polycaprolactone Polymers 0.000 description 5
- 239000004632 polycaprolactone Substances 0.000 description 5
- 229920000573 polyethylene Polymers 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 229920005749 polyurethane resin Polymers 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 239000004970 Chain extender Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 4
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000004677 Nylon Substances 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920000570 polyether Polymers 0.000 description 3
- 229920000909 polytetrahydrofuran Polymers 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- IBOFVQJTBBUKMU-UHFFFAOYSA-N 4,4'-methylene-bis-(2-chloroaniline) Chemical compound C1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1 IBOFVQJTBBUKMU-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- 241000628997 Flos Species 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 150000001718 carbodiimides Chemical class 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229920003049 isoprene rubber Polymers 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- KPSSIOMAKSHJJG-UHFFFAOYSA-N neopentyl alcohol Chemical compound CC(C)(C)CO KPSSIOMAKSHJJG-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- BJZYYSAMLOBSDY-QMMMGPOBSA-N (2s)-2-butoxybutan-1-ol Chemical compound CCCCO[C@@H](CC)CO BJZYYSAMLOBSDY-QMMMGPOBSA-N 0.000 description 1
- HOVAGTYPODGVJG-UVSYOFPXSA-N (3s,5r)-2-(hydroxymethyl)-6-methoxyoxane-3,4,5-triol Chemical compound COC1OC(CO)[C@@H](O)C(O)[C@H]1O HOVAGTYPODGVJG-UVSYOFPXSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- ZWVMLYRJXORSEP-UHFFFAOYSA-N 1,2,6-Hexanetriol Chemical compound OCCCCC(O)CO ZWVMLYRJXORSEP-UHFFFAOYSA-N 0.000 description 1
- ZTNJGMFHJYGMDR-UHFFFAOYSA-N 1,2-diisocyanatoethane Chemical compound O=C=NCCN=C=O ZTNJGMFHJYGMDR-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- ALQLPWJFHRMHIU-UHFFFAOYSA-N 1,4-diisocyanatobenzene Chemical compound O=C=NC1=CC=C(N=C=O)C=C1 ALQLPWJFHRMHIU-UHFFFAOYSA-N 0.000 description 1
- CDMDQYCEEKCBGR-UHFFFAOYSA-N 1,4-diisocyanatocyclohexane Chemical compound O=C=NC1CCC(N=C=O)CC1 CDMDQYCEEKCBGR-UHFFFAOYSA-N 0.000 description 1
- SBJCUZQNHOLYMD-UHFFFAOYSA-N 1,5-Naphthalene diisocyanate Chemical compound C1=CC=C2C(N=C=O)=CC=CC2=C1N=C=O SBJCUZQNHOLYMD-UHFFFAOYSA-N 0.000 description 1
- ATOUXIOKEJWULN-UHFFFAOYSA-N 1,6-diisocyanato-2,2,4-trimethylhexane Chemical compound O=C=NCCC(C)CC(C)(C)CN=C=O ATOUXIOKEJWULN-UHFFFAOYSA-N 0.000 description 1
- 229940008841 1,6-hexamethylene diisocyanate Drugs 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- ORLFVWPPBMVPNZ-UHFFFAOYSA-N 1-(6-methylheptyl)-4-[4-(6-methylheptyl)phenoxy]benzene Chemical compound C1=CC(CCCCCC(C)C)=CC=C1OC1=CC=C(CCCCCC(C)C)C=C1 ORLFVWPPBMVPNZ-UHFFFAOYSA-N 0.000 description 1
- LFSYUSUFCBOHGU-UHFFFAOYSA-N 1-isocyanato-2-[(4-isocyanatophenyl)methyl]benzene Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=CC=C1N=C=O LFSYUSUFCBOHGU-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- PISLZQACAJMAIO-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine Chemical compound CCC1=CC(C)=C(N)C(CC)=C1N PISLZQACAJMAIO-UHFFFAOYSA-N 0.000 description 1
- HQCHAOKWWKLXQH-UHFFFAOYSA-N 2,6-Dichloro-para-phenylenediamine Chemical compound NC1=CC(Cl)=C(N)C(Cl)=C1 HQCHAOKWWKLXQH-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- BDLXTDLGTWNUFM-UHFFFAOYSA-N 2-[(2-methylpropan-2-yl)oxy]ethanol Chemical compound CC(C)(C)OCCO BDLXTDLGTWNUFM-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- SCVJRXQHFJXZFZ-KVQBGUIXSA-N 2-amino-9-[(2r,4s,5r)-4-hydroxy-5-(hydroxymethyl)oxolan-2-yl]-3h-purine-6-thione Chemical compound C1=2NC(N)=NC(=S)C=2N=CN1[C@H]1C[C@H](O)[C@@H](CO)O1 SCVJRXQHFJXZFZ-KVQBGUIXSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- TXDBDYPHJXUHEO-UHFFFAOYSA-N 2-methyl-4,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(SC)=C(N)C(C)=C1N TXDBDYPHJXUHEO-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- YPACMOORZSDQDQ-UHFFFAOYSA-N 3-(4-aminobenzoyl)oxypropyl 4-aminobenzoate Chemical compound C1=CC(N)=CC=C1C(=O)OCCCOC(=O)C1=CC=C(N)C=C1 YPACMOORZSDQDQ-UHFFFAOYSA-N 0.000 description 1
- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 description 1
- RQEOBXYYEPMCPJ-UHFFFAOYSA-N 4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N RQEOBXYYEPMCPJ-UHFFFAOYSA-N 0.000 description 1
- PPUHQXZSLCCTAN-UHFFFAOYSA-N 4-[(4-amino-2,3-dichlorophenyl)methyl]-2,3-dichloroaniline Chemical compound ClC1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1Cl PPUHQXZSLCCTAN-UHFFFAOYSA-N 0.000 description 1
- AOFIWCXMXPVSAZ-UHFFFAOYSA-N 4-methyl-2,6-bis(methylsulfanyl)benzene-1,3-diamine Chemical compound CSC1=CC(C)=C(N)C(SC)=C1N AOFIWCXMXPVSAZ-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 241001112258 Moca Species 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 241000219492 Quercus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- RTWAGNSZDMDWRF-UHFFFAOYSA-N [1,2,2-tris(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1(CO)CO RTWAGNSZDMDWRF-UHFFFAOYSA-N 0.000 description 1
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- HIFVAOIJYDXIJG-UHFFFAOYSA-N benzylbenzene;isocyanic acid Chemical class N=C=O.N=C=O.C=1C=CC=CC=1CC1=CC=CC=C1 HIFVAOIJYDXIJG-UHFFFAOYSA-N 0.000 description 1
- JGCWKVKYRNXTMD-UHFFFAOYSA-N bicyclo[2.2.1]heptane;isocyanic acid Chemical compound N=C=O.N=C=O.C1CC2CCC1C2 JGCWKVKYRNXTMD-UHFFFAOYSA-N 0.000 description 1
- JKJWYKGYGWOAHT-UHFFFAOYSA-N bis(prop-2-enyl) carbonate Chemical compound C=CCOC(=O)OCC=C JKJWYKGYGWOAHT-UHFFFAOYSA-N 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 229940105990 diglycerin Drugs 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 229930004069 diterpene Natural products 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- HOVAGTYPODGVJG-UHFFFAOYSA-N methyl beta-galactoside Natural products COC1OC(CO)C(O)C(O)C1O HOVAGTYPODGVJG-UHFFFAOYSA-N 0.000 description 1
- CQDGTJPVBWZJAZ-UHFFFAOYSA-N monoethyl carbonate Chemical compound CCOC(O)=O CQDGTJPVBWZJAZ-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- FSWDLYNGJBGFJH-UHFFFAOYSA-N n,n'-di-2-butyl-1,4-phenylenediamine Chemical compound CCC(C)NC1=CC=C(NC(C)CC)C=C1 FSWDLYNGJBGFJH-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 150000003335 secondary amines Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 238000005809 transesterification reaction Methods 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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-
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- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/42—Polycondensates having carboxylic or carbonic ester groups in the main chain
- C08G18/4266—Polycondensates having carboxylic or carbonic ester groups in the main chain prepared from hydroxycarboxylic acids and/or lactones
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Description
本發明係有關於一種可對透鏡、反射鏡等光學材料或矽晶圓、硬碟用玻璃基板、鋁基板、及一般金屬研磨加工等要求高度表面平坦性之材料進行穩定且高研磨效率之平坦化加工之研磨墊及其製造方法、以及半導體裝置之製造方法。本發明之研磨墊對矽晶圓或玻璃之精研磨尤為有用。
一般而言,矽晶圓等半導體晶圓、透鏡及玻璃基板等之鏡面研磨,有主要目的在於調整平坦度及面內均一度之粗研磨、與主要目的在於改善表面粗糙度或去除刮痕缺陷之精研磨。
精研磨通常係藉由在可旋轉之平台上黏貼軟質之發泡聚胺酯所組成之麂皮質感人工皮革,並一面於其上供給由含有矽酸膠之鹼基水溶液形成之研磨劑,一面擦磨晶圓之方式進行(專利文獻1)。
然而,若精研磨用之發泡聚胺酯所組成之研磨層之平坦性低,將發生研磨對象物表面產生微小波紋之問題。該微小波紋於最近之精研磨領域中成為特別受注目之問題,且市場上迫切需要可再減低微小波紋之研磨墊。
後述專利文獻2中記載一種目的在於減低研磨對象物表面產生之微小波紋之研磨布,該研磨布係於表面層配置有聚胺酯發泡體者。然而,該文獻中未記載具體之聚胺酯發泡體之摻合或組成等,且在減低微小波紋之效果上,仍有改良之餘地。
專利文獻1:日本專利公開公報特開第2003-37089號
專利文獻2:日本專利公開公報特開第2004-136432號
本發明係有鑑於上述情況而產生者,其目的在於提供一種可減低研磨對象物表面產生之微小波紋之研磨墊及其製造方法、以及半導體裝置之製造方法。
本發明人等為解決上述課題深入檢討後,發現藉由以下所示之研磨墊可達成上述目的,從而完成本發明。
即,本發明之研磨墊,係具有由熱固性聚胺酯發泡體所組成之研磨層者,其特徵在於:前述熱固性聚胺酯發泡體係含有異氰酸酯成分與含活性氫化合物作為原料成分,前述含活性氫化合物係含有官能基數為2以上之多元醇化合物、與官能基數為1之單元醇化合物。
本發明之研磨墊係以熱固性聚胺酯發泡體構成研磨層,其原料成分含有官能基數為2以上之多元醇化合物、與官能基數為1之單元醇化合物。具備該構造之研磨墊因熱固性聚胺酯發泡體而發揮耐久性,且因含有官能基數為1之單元醇化合物,可減低研磨對象物表面所產生之微小波紋。
關於上述研磨墊,前述單元醇化合物宜為下列通式(1)所示之化合物:
R1
-(OCH2
CHR2
)n
-OH (1)
(式中,R1
係甲基或乙基,R2
係氫原子或甲基,n係1~5之整數)。具備該構造之研磨墊可再減低研磨對象物表面產生之微小波紋。
關於上述研磨墊,宜相對於前述多元醇化合物100重量份,含有前述單元醇化合物1~20重量份。藉由將單元醇化合物之含量調整至該範圍內,可維持研磨層之硬度,且可減低研磨對象物表面產生之微小波紋。
關於上述研磨墊,前述多元醇化合物100重量份中,宜含有官能基數為3~4、且羥值為100~1900之多元醇化合物20~75重量份。一般而言,熱固性聚胺酯發泡體之原料若含有官能基數為1之單元醇化合物,則有聚胺酯分子量降低,研磨層硬度降低以致研磨速度等研磨特性惡化之趨向。然而,藉由將上述多元醇化合物之含量調整至該範圍內,可維持研磨層之硬度,且可減低研磨對象物表面產生之微小波紋。
關於上述研磨墊,前述異氰酸酯成分宜為芳香族異氰酸酯,若為碳二亞胺改質二苯甲烷二異氰酸酯更佳。由於合併使用上述含活性氫化合物與碳二亞胺改質MDI,故於研磨層層積有基材層者,研磨層與基材層之接著性顯著提升。
關於上述研磨墊,前述熱固性聚胺酯發泡體宜具有平均氣泡徑20~300μm之略球狀氣泡。由具有平均氣泡徑20~300μm之略球狀氣泡之熱固性聚胺酯發泡體構成研磨層,可使研磨層之耐久性提升。因此,若使用本發明之研磨墊,可高度維持長期平坦化特性,且研磨速度之穩定性亦提高。其中,所謂略球狀係指球狀或橢圓球狀。橢圓球狀之氣泡係長徑L與短徑S之比(L/S)為5以下者,理想者為3以下,若為1.5以下更佳。
又,本發明並有關於一種研磨墊之製造方法,係包含下述步驟:一調製步驟,係藉由機械發泡法調製含有含官能基數為2以上之多元醇化合物與官能基數為1之單元醇化合物之含活性氫化合物、及異氰酸酯成分作為原料成分之氣泡分散胺酯組成物者;一塗佈步驟,係於表面材料上塗佈前述氣泡分散胺酯組成物者;一形成步驟,係使前述氣泡分散胺酯組成物固化,以形成由具有平均氣泡徑20~300μm之略球狀氣泡之熱固性聚胺酯發泡體組成之研磨層者;及一調整步驟,係均勻調整前述研磨層之厚度者。藉由該製造方法,可製成可減低研磨對象物表面產生之微小波紋之研磨墊。
進而,本發明並有關於一種半導體裝置之製造方法,係包含一使用上述任一記載之研磨墊來研磨半導體晶圓表面之步驟。
第1圖係顯示半導體裝置之製造方法所使用之研磨裝置一例之概略構造圖。
本發明之研磨墊係具有由熱固性聚胺酯發泡體(以下亦稱「聚胺酯發泡體」)組成之研磨層。
聚胺酯樹脂因耐磨性佳,且藉由原料組成之各種變化可易於製出具有所需物性之聚合物,此外藉由機械發泡法(包含機械起泡法mechanical floss method)可易於形成略球狀之微細氣泡,乃作為研磨層之構成材料上特別理想之材料。
聚胺酯樹脂係以異氰酸酯成分與含活性氫化合物(官能基數為2以上之多元醇化合物、官能基數為1之單元醇化合物及多胺化合物等)為原料成分製成者。
異氰酸酯成分可不限使用聚胺酯領域中公知之化合物。舉例言之,如:2,4-二異氰酸甲苯酯、2,6-二異氰酸甲苯酯、2,2’-二苯甲烷二異氰酸酯、2,4’-二苯甲烷二異氰酸酯、4,4’-二苯甲烷二異氰酸酯、高分子MDI、碳二亞胺改質MDI(例如商品名millionate MTL,日本POLYURETHANE工業製)、1,5-萘二異氰酸酯、對苯二異氰酸酯、間苯二異氰酸酯、對伸茬二異氰酸酯、間伸茬二異氰酸酯等芳香族二異氰酸酯、乙烯二異氰酸酯、2,2,4-三甲基六亞甲基二異氰酸酯、1,6-六亞甲基二異氰酸酯等脂肪族二異氰酸酯、1,4-環己烷二異氰酸酯、4,4’-二環己基甲烷二異氰酸酯、二異氰酸異佛爾酮、降冰片烷二異氰酸酯等脂環族二異氰酸酯。上述諸等可取1種使用,或取2種以上並用。
上述異氰酸酯成分中,宜使用芳香族二異氰酸酯,特別是使用碳二亞胺改質MDI尤佳。
官能基數為2以上之多元醇化合物,可舉聚胺酯技術領域中通常使用者為例。舉例言之,如:以聚四亞甲基醚二醇、聚乙二醇為代表之聚醚多元醇、以聚丁烯己二酸酯為代表之聚酯多元醇、聚己內酯多元醇、以聚己內酯之類聚酯二醇與碳酸伸烷酯之反應物等為例之聚酯聚碳酸酯多元醇、使碳酸伸乙酯與多元醇反應後所產生之反應混合物與有機二羧酸反應形成之聚酯聚碳酸酯多元醇、聚羥基化合物與碳酸烯丙酯經轉酯作用而得之聚碳酸酯多元醇、使聚合物粒子分散而成之聚醚多元醇之聚合物多元醇等。上述諸等可單獨使用,亦可合併2種以上使用。
又,本發明中官能基數為2以上之多元醇化合物,舉例言之,亦可含有:三羥甲丙烷、甘油、二甘油、1,2,6-己三醇、三乙醇胺、新戊四醇、四羥甲基環己烷、甲基葡萄糖苷及其等之烯化氧(EO、PO等)加成物、乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2,3-丁二醇、1,6-己二醇、新戊二醇、1,4-環己烷二甲醇、3-甲基-1,5-戊二醇、二乙二醇、三乙二醇等低分子量多元醇、單乙醇胺、二乙醇胺、2-(2-胺基乙基胺)乙醇及單丙醇胺等醇胺。上述諸等可單獨使用,亦可合併2種以上使用。
進而,本發明中官能基數為2以上之多元醇化合物,亦可含有鏈伸長劑。鏈伸長劑係具有至少2個以上活性氫基之有機化合物,活性氫基可以羥基、1級或2級胺基、硫醇基(SH)等為例。具體言之,可舉例如:以4,4’-亞甲雙(鄰氯苯胺)(MOCA)、2,6-二氯對苯二胺、4,4’-亞甲雙(2,3-二氯苯胺)、3,5-雙(甲硫基)-2,4-甲苯二胺、3,5-雙(甲硫基)-2,6-甲苯二胺、3,5-二乙基甲苯-2,4-二胺、3,5-二乙基甲苯-2,6-二胺、1,3-丙二醇-二對胺苯甲酸酯、1,2-雙(2-胺基苯硫基)乙烷、4,4’-二胺-3,3’-二乙-5,5’-二甲二苯甲烷、N-N’-二(二級丁基)-4,4’-二胺二苯甲烷、3,3’-二乙-4,4’-二胺二苯甲烷、間伸茬二胺、N,N’-二(二級丁基)對苯二胺、間苯二胺、及對伸茬二胺等為例之多胺類,抑或上述低分子量多元醇或低分子量多胺等。上述諸等可僅用1種,亦可取2種以上混合使用。
本發明中,若多元醇化合物之全部重量設為100重量份,則官能基數為3~4、且羥值為100~1900之多元醇化合物宜含有20~75重量份。本發明中,熱固性聚胺酯發泡體之原料含有官能基數為1之單元醇化合物固為重要,但上述多元醇化合物含量在該範圍內者,可維持研磨層之硬度,且可減低研磨對象物表面產生之微小波紋。
官能基數為1之單元醇化合物可使用聚胺酯技術領域中公知者,但本發明中特別在使用下列通式(1):
R1
-(OCH2
CHR2
)n
-OH (1)
(通式中,R1
係甲基或乙基,R2
係氫原子或甲基,n係1~5之整數)所示之化合物時,可更減低研磨對象物表面產生之微小波紋。本發明可使用之單元醇化合物,具體言之可舉例如:二乙二醇一乙基醚、二乙二醇一甲基醚、二丙二醇一乙基醚、二丙二醇一甲基醚、2-甲氧基乙醇、乙二醇一乙基醚、乙二醇一丁基醚、乙二醇單叔丁基醚、乙二醇單苯醚、二乙二醇一丁基醚、三乙二醇一丁基醚、聚乙二醇單對異辛基苯醚;乙酸、甲基丙烯酸等羧酸類之烯化氧加成物等。
本發明中,含活性氫化合物宜含有多胺化合物。多胺化合物可舉伸乙二胺、甲苯二胺、二苯甲烷二胺及其等之烯化氧(EO、PO等)加成物為例。上述諸等可單獨使用,亦可合併2種以上使用。其中又以使用伸乙二胺之EO加成物尤佳。
聚胺酯樹脂可由預聚合物法、直接聚合法中採任一方法製造。以預聚合物法製造聚胺酯樹脂者,於端基為異氰酸酯之預聚合物固化時使用鏈伸長劑。鏈伸長劑可使用上述列舉者。
異氰酸酯成分、含活性氫化合物之比,可依各自之分子量或聚胺酯發泡體之所需物性等做各種變化。為製得具有所需特性之發泡體,相對於含活性氫化合物之之總活性氫基(羥基+胺基)數,異氰酸酯成分之異氰酸酯基數(NCO INDEX)宜為0.80~1.20,若為0.90~1.15更佳。若異氰酸酯基數在前述範圍外,將導致固化不良而無法獲得要求之比重、硬度及壓縮率等。
聚胺酯樹脂可運用熔融法、溶液法等公知之聚胺酯化技術製造,但考慮到成本、作業環境等因素,則宜以熔融法進行製造。
構成研磨層之熱固性聚胺酯發泡體理想上可藉由機械發泡法(包含機械起泡法mechanical floss method)製造。
特別又以使用了矽型界面活性劑之機械性發泡法為佳。適合作為該矽型界面活性劑之化合物,可以SH-192及L-5340(Dow Corning Toray‧silicone公司製)、B8443(Goldschmidt公司製)等為例。
另,視必要亦可加入抗氧化劑等穩定劑、潤滑劑、顏料、填充劑、抗靜電劑及其他添加劑。
構成研磨層之聚胺酯發泡體之製造方法於以下舉例說明。作為該聚胺酯發泡體原料之氣泡分散胺酯組成物之製造方法,可由下列步驟(1)~(3)例舉說明。
(1)使異氰酸酯成分及多元醇化合物等反應形成端基為異氰酸酯之預聚合物再添加矽型界面活性劑形成第1成分,並於非反應性氣體存在下對該第1成分進行機械攪拌,使非反應性氣體分散成微細氣泡形成氣泡分散液。繼之,於該氣泡分散液中添加包含低分子量多元醇或低分子量多胺等含活性氫化合物之第2成分,混合調製成氣泡分散胺酯組成物。第2成分中亦可適當添加觸媒。
(2)於含異氰酸酯成分(或端基為異氰酸酯之預聚合物)之第1成分、及含有含活性氫化合物之第2成分中至少一方添加矽型界面活性劑,並於非反應性氣體存在下對添加有矽型界面活性劑之成分進行機械攪拌,使非反應性氣體分散成微細氣泡形成氣泡分散液。繼之,於該氣泡分散液中添加其餘成分,混合調製成氣泡分散胺酯組成物。
(3)於含異氰酸酯成分(或端基為異氰酸酯之預聚合物)之第1成分、及含有含活性氫化合物之第2成分中至少一方添加矽型界面活性劑,並於非反應性氣體存在下對前述第1成分及第2成分進行機械攪拌,使非反應性氣體分散成微細氣泡後調製氣泡分散胺酯組成物。
又,氣泡分散胺酯組成物亦可以機械起泡法調製。所謂機械起泡法,係一將原料成分放入拌合頭之混合室內同時混入非反應性氣體,藉由歐克斯攪拌機(Oaks mixer)等攪拌機混合攪拌,使非反應性氣體形成微細氣泡狀態分散於原料混合物中之方法。機械起泡法之優點在於可藉由調節非反應性氣體之混入量,輕易調整聚胺酯發泡體之密度。又,因可連續成形產出具有平均氣泡徑20~300μm之略球狀微細氣泡之聚胺酯發泡體,故製造效率佳。
繼之,於表面材料上塗佈上述方法所調製之氣泡分散胺酯組成物,並使該氣泡分散胺酯組成物固化後,於表面材料上直接形成熱固性聚胺酯發泡體(研磨層)。
用以形成微細氣泡之非反應性氣體,宜為非可燃性者,具體言之可以氮、氧、碳酸氣體、氦或氬等稀有氣體或其等之混合氣體為例,以成本面而言則以使用經乾燥去除水分之空氣最佳。
用以使非反應性氣體形成微細氣泡狀分散之攪拌裝置,公知之攪拌裝置均可使用並無特別限制,具體言之可以均質機、溶解器、雙軸行星式攪拌機(planetary mixer)、機械起泡發泡機等為例。攪拌裝置之攪拌葉片形狀亦無特別限定,但以攪打器型攪拌葉片可形成較佳之微細氣泡。
另,發泡步驟中調製氣泡分散液之攪拌、混合第1成分與第2成分之攪拌,使用不同攪拌裝置亦為一理想型態。混合步驟之攪拌非為形成氣泡之攪拌亦可,宜使用不會捲進大氣泡之攪拌裝置。此類攪拌裝置係以行星式攪拌機為佳。即使調製氣泡分散液之發泡步驟與混合各成分之混合步驟之攪拌裝置使用同一攪拌裝置亦無妨,必要時進行攪拌條件之調整例如調整攪拌葉片之旋轉速度等再使用即可。
本發明之研磨墊即使於研磨層層積基材層亦無妨。於研磨層層積基材層時之基材層並無特殊限制,可舉例如:尼龍、聚丙烯、聚乙烯及聚氯乙烯等塑膠膜、聚胺酯泡棉、聚乙烯泡棉等高分子樹脂發泡體、丁二烯橡膠、異戊二烯橡膠等橡膠性樹脂、感光性樹脂等。其等中宜使用尼龍、聚丙烯、聚乙烯、聚酯及聚氯乙烯等塑膠膜、聚胺酯泡棉、聚乙烯泡棉等高分子樹脂發泡體。又,基材層亦可使用雙面膠帶、單面黏著膠帶(單面之黏著層係用以黏貼於旋轉台者)。
基材層為賦予研磨墊韌性,宜與聚胺酯發泡體具有同等硬度,或比聚胺酯發泡體更硬。此外,基材層(若為雙面膠帶及單面黏著膠帶則為基材)之厚度並無特殊限制,但由強度、可撓性等觀點言之,宜為20~1000μm,若為50~800μm更佳。
將氣泡分散胺酯組成物塗佈於表面材料上之方法,舉例言之,可採用凹版印刷、接觸塗佈、逗號刮塗等輥式塗佈機、狹縫式、水槽式(fountain)等模具式塗佈機、壓擠式塗佈機、簾幕式塗佈機等塗佈方法,但凡可於表面材料上形成均勻塗膜之任何方法均可。
將氣泡分散胺酯組成物塗佈於表面材料上經反應至不流動狀態形成聚胺酯發泡體,再對該發泡體加熱、進行後硬化,將收提升聚胺酯發泡體之物理性特性之效,乃一極為適切之方法。後硬化宜於40~70℃環境下進行10分~24小時,此外於常壓下進行則氣泡形狀穩定,效果理想。
聚胺酯發泡體之製造上,使用3級胺類等公知用以促進聚胺酯反應之觸媒亦無妨。觸媒之種類或添加量則於各成分之混合步驟後,考慮於表面材料上塗佈之流動時間再行選擇。
聚胺酯發泡體之製造可採秤量各成分後投入容器並機械攪拌之批式製造方式,亦可採用連續供給各成分與非反應性氣體於攪拌裝置進行機械攪拌,並送出氣泡分散胺酯組成物製作成形品之連續生產方式。
本發明之研磨墊之製造方法中,必須於表面材料上形成聚胺酯發泡體後或形成聚胺酯發泡體之同時,調整聚胺酯發泡體之厚度達均勻狀態。調整聚胺酯發泡體之厚度達均勻狀態之方法並無特殊限制,但舉例言之有以研磨材擦光之方法、以壓板加壓之方法等。經擦光者,可製成聚胺酯發泡體表面不具表層之研磨層,經加壓者,可製成聚胺酯發泡體表面具有表層之研磨層。加壓時之條件並無特殊限制,但宜將溫度調節至玻璃轉移點以上。
此外,亦可將上述方法調製之氣泡分散胺酯組成物塗佈於脫模片上,並於該氣泡分散胺酯組成物上層積基材層。繼之,藉由壓製機構使厚度平均且使氣泡分散胺酯組成物固化形成聚胺酯發泡體。該方法因可控制研磨層之厚度形成極均勻狀態,故為特別理想之方法。
脫模片之形成材料並無特殊限制,可舉與上述基材層同樣之樹脂或紙等為例。脫模片以受熱時尺寸變化小者為佳。另,脫模片之表面亦可施有脫模處理。
用以使脫模片、氣泡分散胺酯組成物(氣泡分散胺酯層)及基材層所組成之複合層厚度形成均勻狀態之壓製機構並無特殊限制,舉例言之,有一藉由塗佈輥、軋輥等壓縮成一定厚度之方法。考慮到壓縮後發泡層中之氣泡變大1.2~2倍左右,壓縮時宜設定(塗佈機或軋輥之間隙)-(基材層及脫模片之厚度)=(固化後之聚胺酯發泡體厚度之50~85%)。又,為製得比重為0.2~0.5之聚胺酯發泡體,通過軋輥前之氣泡分散胺酯組成物之比重宜為0.24~1。
接著,使複合片之厚度達到均勻後,反應至不流動狀態形成聚胺酯發泡體,並加熱進行後硬化。後硬化之條件同於前述。
繼之,剝離聚胺酯發泡體下之脫模片。此時,聚胺酯發泡體上形成有表層。如上述藉由機械發泡法形成聚胺酯發泡體時,氣泡在聚胺酯發泡體下面側之不均小於上面側。如此一來,藉由將製成之聚胺酯發泡體之下面側作為研磨表面,形成氣泡不均小之研磨表面,則研磨速度之穩定性更為提升。另,亦可於剝離脫模片後對聚胺酯發泡體進行擦光,以去除表層。
聚胺酯發泡體之厚度並無特殊限制,但宜為0.2~3mm,若為0.5~2mm更佳。
藉由上述製造方法製成之聚胺酯發泡體,具有略球狀之氣泡。另,本發明之聚胺酯發泡體亦可為具有連續氣泡者,或可具有獨立氣泡。
聚胺酯發泡體中氣泡之平均氣泡徑為20~300μm,理想者為50~100μm。又,連續氣泡者,氣泡表面之圓形孔平均直徑宜為100μm以下,若為50μm以下更佳。
聚胺酯發泡體之比重宜為0.3~0.9,若為0.4~0.5更佳。比重未達0.3者,氣泡率過高以致耐久性趨於惡化。反之,若比重超過0.9,則必須使材料為低交聯密度以達到某一定之彈性率。在此情形下,永久應變增加,且耐久性趨於惡化。
聚胺酯發泡體之硬度,宜經ASKER C型硬度計測為10~80度,若為20~70度更佳。ASKER C型硬度計測得之硬度未達10度者,有耐久性降低,研磨後之被研磨材平坦性惡化之趨向。反之,若超過80度,則被研磨材表面容易產生刮痕缺陷。
本發明之研磨墊形狀並無特殊限制,可為長5~10m左右之狹長形,亦可為直徑50~150cm左右之圓形。
研磨層之表面亦可具有用以保持‧更換研磨液之凹凸構造。發泡體組成之研磨層於研磨表面具有許多開口,並具有保持‧更換研磨液之作用,但藉由在研磨表面形成凹凸構造,可使研磨液之保持與更換更有效率,並可防止與研磨對象物吸附以致破壞研磨對象物。凹凸構造並無特別限制,凡可保持‧更換研磨液之形狀即可,舉例言之,如X(條狀)凹槽、XY細長凹槽、同心圓狀凹槽、貫通孔、非貫通孔、多角柱、圓柱、螺旋狀凹槽、偏心圓形凹槽、放射狀凹槽及該等凹槽之組合。又,該等凹凸構造一般呈現規則性,但為使研磨液之保持‧更換性佳,亦可每某一範圍改變凹槽節距、凹槽寬、凹槽深度等。
上述凹凸構造之製作方法並無特別限定,但舉例言之,有使用如特定尺寸鑽頭之類之夾具進行機械切割之方法、於具有特定表面形狀之鑄模中注入樹脂並予以固化之製作方法、以具有特定表面形狀之壓板對樹脂加壓之製造方法、使用微影成像術製作之方法、用印刷手法製作之方法、藉由用有碳酸氣體雷射等之雷射光進行之製作方法等。
本發明之研磨墊亦可為在研磨層之非研磨面側黏合有緩衝片者。於研磨層層積基材層時,宜按研磨層、基材層、緩衝層之順序進行層積。
緩衝片(緩衝層)係用以補足研磨層之特性者。緩衝片係化學機械研磨(Chemical Mechanical Polishing)中,為使抵換關係中平面性與均勻度兩者並立之所必須。所謂平面性係指對圖案形成時產生有微小凹凸之被研磨材已進行研磨時圖案部之平坦性,均勻度係指被研磨材全體之均一性。藉由研磨層之特性,改善平面性,並藉由緩衝片之特性改善均勻度。本發明之研磨墊中,緩衝片宜使用較研磨層柔軟者。
緩衝片可舉聚酯不織布、尼龍不織布、丙烯不織布等纖維不織布或如浸漬聚胺酯之聚酯不織布之類之浸樹脂不織布、聚胺酯泡棉、聚乙烯泡棉等高分子樹脂發泡體、丁二烯橡膠、異戊二烯橡膠等橡膠性樹脂、感光性樹脂等為例。
黏合緩衝片之手段,舉例言之,有一將研磨層與緩衝片夾以雙面膠帶再加壓之方法。
本發明之研磨墊亦可於與旋轉台接著之面設有雙面膠帶。
半導體裝置係經由使用前述研磨墊研磨半導體晶圓表面之步驟製造。所謂半導體晶圓一般而言係於矽晶圓上層積佈線金屬及氧化膜而成者。半導體晶圓之研磨方法、研磨裝置並無特殊限制,舉例言之,係使用第1圖所示具有用以支持研磨墊1之研磨平台2、用以支持半導體晶圓4之支持台(拋光頭)5與用以對晶圓均勻加壓之背襯材、研磨劑3之供給機構之研磨裝置等進行。舉例言之,研磨墊1係藉由雙面膠帶之黏貼裝設於研磨平台2上。研磨平台2與支持台5係配置成使各自所支持之研磨墊1與半導體晶圓4相對向之狀態,並分別具有旋轉軸6、7。又,支持台5側設有用以將半導體晶圓4緊壓於研磨墊1上之加壓機構。研磨時,使研磨平台2與支持台5旋轉同時將半導體晶圓4壓在研磨墊1上,且一面供給研磨液一面進行研磨。研磨液之流量、研磨負載、研磨平台旋轉數及晶圓旋轉數並無特殊限制,適當調整即可進行。
藉此即可改善半導體晶圓4表面之表面粗糙度,並去除刮痕缺陷。繼之,藉由切割、接合、封裝等製造半導體裝置。半導體裝置係用於運算處理裝置或記憶體等。此外,透鏡或硬碟用之玻璃基板亦可以同於前述之方法進行精研磨。
以下,舉實施例說明本發明,但本發明並非以該等實施例為限。
依據JIS Z8807-1976進行。將製成之聚胺酯發泡體片體切成4cm×8.5cm之長條狀(厚度:任意),做成試樣,並於溫度23℃±2℃、濕度50%±5%之環境下靜置16小時。測量時使用比重計(sartorius公司製)測量比重。
依據JIS K7312進行。將製成之聚胺酯發泡體切成5cm×5cm之(厚度:任意)大小,做成試樣,並於溫度23℃±2℃、濕度50%±5%之環境下靜置16小時。測量時重疊試樣,使厚度達10mm以上。使用硬度計(高分子計器公司製,ASKER C型硬度計,加壓面高度:3mm),使加壓面接觸30秒後測量硬度。
使用非接觸式表面輪廓儀(ZYGO公司製NewView6300),以透鏡放大率2.5倍、變焦放大率0.5倍,並設定帶通濾波器為200~1250μm後,測量研磨對象物表面5點之Ra,其平均值(nm)為微小波紋。另,測量微小波紋時,使用經以下研磨方法研磨之研磨對象物。
雙面研磨機:SpeedFam公司製,9B型雙面研磨機
加工壓力:100g/cm2
平台旋轉數:50rpm
研磨劑供給量:4L/min
投入之基板:OHARA公司製,TS-10SX
投入之基板之片數:25片
連續研磨至基板厚度為初期厚度之85%。另,使用之研磨劑以下列方法調整。
於水中添加SHOROX A-10(昭和電工公司製),經混合後,調製出比重為1.06~1.09之研磨劑。
使用之各原料如下。
聚己內酯多元醇「PLACCEL210N(PCL210N)」,官能基數:2,羥值:110mg KOH/g,DAICEL化學公司製
聚己內酯多元醇「PLACCEL305(PCL305)」,官能基數:3,羥值:305mg KOH/g,DAICEL化學公司製
聚己內酯多元醇「PLACCEL308(PCL308)」,官能基數:3,羥值:198mg KOH/g,DAICEL化學公司製
聚四亞甲基醚二醇 「PTMG1000」,官能基數:2,羥值:110mg KOH/g,三菱化學公司製
聚四亞甲基醚二醇 「PTMG2000」,官能基數:2,羥值:56mg KOH/g,三菱化學公司製
二乙二醇(DEG) 官能基數:2,羥值:1057mg KOH/g,nacalai tesque公司製
1,4-丁二醇(1,4-BD) 官能基數:2,羥值:1247mg KOH/g,nacalai tesque公司製
三羥甲丙烷之環氧丙烷加成物 「EXCENOL 890MP」,官能基數:3,羥值:865mg KOH/g,旭硝子公司製
二甘油 官能基數:4,羥值:1350mg KOH/g,和光純藥工業公司製
二乙二醇一乙基醚(EtODEG) 官能基數:1,羥值:418mg KOH/g,nacalai tesque公司製
二乙二醇一甲基醚(MeODEG) 官能基數:1,羥值:467mg KOH/g,nacalai tesque公司製
「Kao No.25」,花王公司製
「B8443」,Goldschmidt公司製
碳二亞胺改質二苯甲烷二異氰酸酯(MDI),「Millionate MTL」,日本聚胺酯工業公司製
將各原料以表1上段所記之摻合比率(數值乃多元醇化合物全部重量設為100重量份時之重量份)放入容器,利用攪拌葉片以旋轉數900rpm激烈攪拌約4分鐘使反應系內攝入氣泡。繼之,添加碳二亞胺改質MDI達NCO INDEX為1.10,攪拌約1分鐘後調製成氣泡分散胺酯組成物。
將調製之氣泡分散胺酯組成物塗佈於經脫模處理之PET片(東洋紡公司製,厚度75μm)所組成之脫模片上,形成氣泡分散胺酯層。接著,於該氣泡分散胺酯層上被覆PET片(東洋紡公司製,厚度188μm)所組成之基材層。以軋輥將氣泡分散胺酯層形成1.5mm之厚度,並進行1次40℃且30分鐘之固化後,進行2次70℃且30分鐘之固化,形成聚胺酯發泡體(發泡層)。繼之,剝離脫模片。其次,利用切片機(Fecken公司製)使聚胺酯發泡體之厚度變成1.3mm,調整厚度精度。繼而,於基材層表面使用淋膜機黏貼雙面膠帶(double tack tape,積水化學工業公司製)製成研磨墊。
由表1結果可知,實施例1~6之研磨墊相較於比較例1之研磨墊,研磨對象物表面產生之微小波紋更為減低。
1...研磨墊
2...研磨平台
3...研磨劑(研磨液)
4...研磨對象物(半導體晶圓、透鏡、玻璃板)
5...支持台(拋光頭)
6、7...旋轉軸
第1圖係顯示半導體裝置之製造方法所使用之研磨裝置一例之概略構造圖。
1...研磨墊
2...研磨平台
3...研磨劑(研磨液)
4...研磨對象物(半導體晶圓、透鏡、玻璃板)
5...支持台(拋光頭)
6、7...旋轉軸
Claims (8)
- 一種研磨墊,係具有由熱固性聚胺酯發泡體所組成之研磨層者,其特徵在於:前述熱固性聚胺酯發泡體係含有異氰酸酯成分與含活性氫化合物作為原料成分;前述含活性氫化合物係含有官能基數為2以上之多元醇化合物、與官能基數為1之單元醇化合物,且前述單元醇化合物係下列通式(1)所示之化合物:R1 -(OCH2 CHR2 )n -OH (1)(式中,R1 係甲基或乙基,R2 係氫原子或甲基,n係1~5之整數)。
- 如申請專利範圍第1項之研磨墊,係相對於前述多元醇化合物100重量份,含有前述單元醇化合物1~20重量份。
- 如申請專利範圍第1項之研磨墊,其中前述多元醇化合物100重量份中,係含有官能基數為3~4、且羥值為100~1900mg KOH/g之多元醇化合物20~75重量份。
- 如申請專利範圍第1項之研磨墊,其中該異氰酸酯成分係芳香族異氰酸酯。
- 如申請專利範圍第1項之研磨墊,其中該異氰酸酯成分係碳二亞胺改質二苯甲烷二異氰酸酯。
- 如申請專利範圍第1項之研磨墊,其中該熱固性聚胺酯發泡體係具有平均氣泡徑20~300μm之略球狀氣泡。
- 一種研磨墊之製造方法,係包含下述步驟: 一調製步驟,係藉由機械發泡法調製含有含官能基數為2以上之多元醇化合物與官能基數為1之單元醇化合物之含活性氫化合物、及異氰酸酯成分作為原料成分之氣泡分散胺酯組成物者;一塗佈步驟,係於表面材料上塗佈前述氣泡分散胺酯組成物者;一形成步驟,係使前述氣泡分散胺酯組成物固化,以形成由具有平均氣泡徑20~300μm之略球狀氣泡之熱固性聚胺酯發泡體組成之研磨層者;及一調整步驟,係均勻調整前述研磨層之厚度;且前述單元醇化合物係下列通式(1)所示之化合物:R1 -(OCH2 CHR2 )n -OH (1)(式中,R1 係甲基或乙基,R2 係氫原子或甲基,n係1~5之整數)。
- 一種半導體裝置之製造方法,係包含一使用如申請專利範圍第1項之研磨墊來研磨半導體晶圓表面之步驟。
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JP4237800B2 (ja) | 2007-01-15 | 2009-03-11 | 東洋ゴム工業株式会社 | 研磨パッド |
JP5078000B2 (ja) * | 2007-03-28 | 2012-11-21 | 東洋ゴム工業株式会社 | 研磨パッド |
JP4593643B2 (ja) * | 2008-03-12 | 2010-12-08 | 東洋ゴム工業株式会社 | 研磨パッド |
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JP5377909B2 (ja) * | 2008-09-03 | 2013-12-25 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
JP2010064153A (ja) * | 2008-09-08 | 2010-03-25 | Kuraray Co Ltd | 研磨パッド |
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JP5356098B2 (ja) | 2009-04-03 | 2013-12-04 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
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2010
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2011
- 2011-03-17 KR KR1020127022940A patent/KR101399519B1/ko active IP Right Grant
- 2011-03-17 WO PCT/JP2011/056455 patent/WO2011118505A1/ja active Application Filing
- 2011-03-17 US US13/634,218 patent/US9181386B2/en active Active
- 2011-03-17 SG SG2012066114A patent/SG183939A1/en unknown
- 2011-03-17 CN CN201180011398.3A patent/CN102781627B/zh active Active
- 2011-03-23 TW TW100109873A patent/TWI450799B/zh active
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Also Published As
Publication number | Publication date |
---|---|
KR20120123129A (ko) | 2012-11-07 |
US20130035021A1 (en) | 2013-02-07 |
CN102781627A (zh) | 2012-11-14 |
SG183939A1 (en) | 2012-10-30 |
JP2011200999A (ja) | 2011-10-13 |
CN102781627B (zh) | 2015-03-11 |
KR101399519B1 (ko) | 2014-05-27 |
JP5528169B2 (ja) | 2014-06-25 |
US9181386B2 (en) | 2015-11-10 |
WO2011118505A1 (ja) | 2011-09-29 |
TW201206642A (en) | 2012-02-16 |
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