TWI450417B - 半導體元件 - Google Patents

半導體元件 Download PDF

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Publication number
TWI450417B
TWI450417B TW099118497A TW99118497A TWI450417B TW I450417 B TWI450417 B TW I450417B TW 099118497 A TW099118497 A TW 099118497A TW 99118497 A TW99118497 A TW 99118497A TW I450417 B TWI450417 B TW I450417B
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor device
epitaxial layer
layer
light
Prior art date
Application number
TW099118497A
Other languages
English (en)
Chinese (zh)
Other versions
TW201133935A (en
Inventor
程志青
童敬文
Original Assignee
廣鎵光電股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 廣鎵光電股份有限公司 filed Critical 廣鎵光電股份有限公司
Publication of TW201133935A publication Critical patent/TW201133935A/zh
Application granted granted Critical
Publication of TWI450417B publication Critical patent/TWI450417B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

Landscapes

  • Led Devices (AREA)
TW099118497A 2010-03-26 2010-06-08 半導體元件 TWI450417B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/732,537 US8258531B2 (en) 2010-03-26 2010-03-26 Semiconductor devices

Publications (2)

Publication Number Publication Date
TW201133935A TW201133935A (en) 2011-10-01
TWI450417B true TWI450417B (zh) 2014-08-21

Family

ID=44655343

Family Applications (2)

Application Number Title Priority Date Filing Date
TW099118497A TWI450417B (zh) 2010-03-26 2010-06-08 半導體元件
TW103119660A TWI533471B (zh) 2010-03-26 2010-06-08 半導體元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103119660A TWI533471B (zh) 2010-03-26 2010-06-08 半導體元件

Country Status (5)

Country Link
US (1) US8258531B2 (enExample)
JP (2) JP5181370B2 (enExample)
KR (1) KR101208803B1 (enExample)
CN (2) CN102201510B (enExample)
TW (2) TWI450417B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100976819B1 (ko) * 2010-02-10 2010-08-20 (주)더리즈 반도체 기판 및 이를 이용한 발광소자
TWI430476B (zh) * 2010-05-24 2014-03-11 Huga Optotech Inc 半導體發光元件
US9293625B2 (en) * 2012-04-13 2016-03-22 Tandem Sun Ab Method for manufacturing a semiconductor device based on epitaxial growth
TWI515929B (zh) * 2012-04-24 2016-01-01 新世紀光電股份有限公司 發光角度收斂之圖案化基材及發光二極體元件
TW201616674A (zh) * 2014-10-17 2016-05-01 新世紀光電股份有限公司 發光二極體基板之圖形化微結構
TWI921008B (zh) * 2025-01-16 2026-04-01 友達光電股份有限公司 發光裝置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318441A (ja) * 2001-07-24 2003-11-07 Nichia Chem Ind Ltd 半導体発光素子
JP2005101566A (ja) * 2003-08-19 2005-04-14 Nichia Chem Ind Ltd 半導体素子、発光素子及びその基板の製造方法
US20060258027A1 (en) * 2005-05-16 2006-11-16 Akira Ohmae Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, and light-emitting diode display and electronic device
JP2008117528A (ja) * 2007-12-27 2008-05-22 Fujitsu Ltd 光磁気記録媒体

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3595277B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 ＧａＮ系半導体発光ダイオード
JP3991823B2 (ja) 2002-09-04 2007-10-17 昭和電工株式会社 Ｉｉｉ族窒化物半導体結晶、その製造方法、ｉｉｉ族窒化物半導体エピタキシャルウェーハ
KR100714639B1 (ko) * 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자
TWI236773B (en) 2004-06-21 2005-07-21 Nat Univ Chung Hsing High-efficiency light-emitting device
JP4645225B2 (ja) * 2005-02-24 2011-03-09 豊田合成株式会社 半導体素子の製造方法
CN100438109C (zh) * 2005-05-16 2008-11-26 索尼株式会社 发光二极管、集成发光二极管、其制法、生长方法、光源单元装置、背光装置、显示器和电子器件
JP2007012809A (ja) * 2005-06-29 2007-01-18 Univ Of Tokushima 窒化ガリウム系化合物半導体装置およびその製造方法
JP2007019318A (ja) * 2005-07-08 2007-01-25 Sumitomo Chemical Co Ltd 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法
TWI253771B (en) 2005-07-25 2006-04-21 Formosa Epitaxy Inc Light emitting diode structure
JP2007201379A (ja) * 2006-01-30 2007-08-09 Hamamatsu Photonics Kk 化合物半導体基板、その製造方法及び半導体デバイス
JP5082752B2 (ja) 2006-12-21 2012-11-28 日亜化学工業株式会社 半導体発光素子用基板の製造方法及びそれを用いた半導体発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318441A (ja) * 2001-07-24 2003-11-07 Nichia Chem Ind Ltd 半導体発光素子
JP2005101566A (ja) * 2003-08-19 2005-04-14 Nichia Chem Ind Ltd 半導体素子、発光素子及びその基板の製造方法
US20060258027A1 (en) * 2005-05-16 2006-11-16 Akira Ohmae Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, and light-emitting diode display and electronic device
JP2008117528A (ja) * 2007-12-27 2008-05-22 Fujitsu Ltd 光磁気記録媒体

Also Published As

Publication number Publication date
TW201448268A (zh) 2014-12-16
CN102201510A (zh) 2011-09-28
CN103346228A (zh) 2013-10-09
CN103346228B (zh) 2017-06-13
JP5181370B2 (ja) 2013-04-10
US20110233582A1 (en) 2011-09-29
US8258531B2 (en) 2012-09-04
JP2013110426A (ja) 2013-06-06
CN102201510B (zh) 2013-07-24
JP2011211145A (ja) 2011-10-20
TWI533471B (zh) 2016-05-11
TW201133935A (en) 2011-10-01
KR101208803B1 (ko) 2012-12-06
KR20110108224A (ko) 2011-10-05

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