TWI447833B - 包含橫向伸縮囊及非接觸式粒子密封部的可調間隙電容耦合式射頻電漿反應器 - Google Patents

包含橫向伸縮囊及非接觸式粒子密封部的可調間隙電容耦合式射頻電漿反應器 Download PDF

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Publication number
TWI447833B
TWI447833B TW098104110A TW98104110A TWI447833B TW I447833 B TWI447833 B TW I447833B TW 098104110 A TW098104110 A TW 098104110A TW 98104110 A TW98104110 A TW 98104110A TW I447833 B TWI447833 B TW I447833B
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Taiwan
Prior art keywords
bellows
arm unit
plasma processing
processing apparatus
side wall
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TW098104110A
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English (en)
Chinese (zh)
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TW200943457A (en
Inventor
James E Tappan
Scott Jeffery Stevenot
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Lam Res Corp
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Publication of TWI447833B publication Critical patent/TWI447833B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW098104110A 2008-02-08 2009-02-09 包含橫向伸縮囊及非接觸式粒子密封部的可調間隙電容耦合式射頻電漿反應器 TWI447833B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US698508P 2008-02-08 2008-02-08

Publications (2)

Publication Number Publication Date
TW200943457A TW200943457A (en) 2009-10-16
TWI447833B true TWI447833B (zh) 2014-08-01

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Family Applications (1)

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TW098104110A TWI447833B (zh) 2008-02-08 2009-02-09 包含橫向伸縮囊及非接觸式粒子密封部的可調間隙電容耦合式射頻電漿反應器

Country Status (7)

Country Link
US (2) US8552334B2 (cg-RX-API-DMAC7.html)
JP (1) JP5759177B2 (cg-RX-API-DMAC7.html)
KR (1) KR101659095B1 (cg-RX-API-DMAC7.html)
CN (1) CN102084468B (cg-RX-API-DMAC7.html)
SG (1) SG188140A1 (cg-RX-API-DMAC7.html)
TW (1) TWI447833B (cg-RX-API-DMAC7.html)
WO (1) WO2009099660A2 (cg-RX-API-DMAC7.html)

Families Citing this family (136)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7390755B1 (en) 2002-03-26 2008-06-24 Novellus Systems, Inc. Methods for post etch cleans
US7288484B1 (en) 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US7740768B1 (en) * 2006-10-12 2010-06-22 Novellus Systems, Inc. Simultaneous front side ash and backside clean
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
WO2009099660A2 (en) 2008-02-08 2009-08-13 Lam Research Corporation Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal
US8900404B2 (en) * 2008-06-10 2014-12-02 Lam Research Corporation Plasma processing systems with mechanisms for controlling temperatures of components
CN101351076B (zh) * 2008-09-16 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备
US8591661B2 (en) 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
JP4523661B1 (ja) * 2009-03-10 2010-08-11 三井造船株式会社 原子層堆積装置及び薄膜形成方法
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US8721797B2 (en) 2009-12-11 2014-05-13 Novellus Systems, Inc. Enhanced passivation process to protect silicon prior to high dose implant strip
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
JP5422416B2 (ja) * 2010-01-28 2014-02-19 株式会社日立製作所 試料搬送装置
US9190289B2 (en) 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
JP6054314B2 (ja) 2011-03-01 2016-12-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板搬送及びラジカル閉じ込めのための方法及び装置
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
TWI555058B (zh) 2011-03-01 2016-10-21 應用材料股份有限公司 雙負載閘配置之減弱及剝離處理腔室
US20120318455A1 (en) * 2011-06-14 2012-12-20 Andreas Fischer Passive compensation for temperature-dependent wafer gap changes in plasma processing systems
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
TWI594667B (zh) * 2011-10-05 2017-08-01 應用材料股份有限公司 對稱電漿處理腔室
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US8872525B2 (en) 2011-11-21 2014-10-28 Lam Research Corporation System, method and apparatus for detecting DC bias in a plasma processing chamber
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US8898889B2 (en) * 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US9263240B2 (en) 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
JP6276697B2 (ja) * 2011-11-23 2018-02-07 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 対称的なｒｆ供給のための周囲ｒｆフィードおよび対称ｒｆリターン
KR102068853B1 (ko) * 2011-11-23 2020-01-22 램 리써치 코포레이션 Rf 스트랩 입력을 갖는 대칭적 rf 리턴 및 주변 rf 피드
KR102011535B1 (ko) 2011-11-24 2019-08-16 램 리써치 코포레이션 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버
CN104137248B (zh) 2012-02-29 2017-03-22 应用材料公司 配置中的除污及剥除处理腔室
US8895452B2 (en) * 2012-05-31 2014-11-25 Lam Research Corporation Substrate support providing gap height and planarization adjustment in plasma processing chamber
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10297459B2 (en) 2013-09-20 2019-05-21 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9543158B2 (en) 2014-12-04 2017-01-10 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP6581602B2 (ja) 2014-02-06 2019-09-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 改善されたフローコンダクタンス及び均一性のため軸対称性を可能にするインラインｄｐｓチャンバハードウェア設計
US20150243483A1 (en) * 2014-02-21 2015-08-27 Lam Research Corporation Tunable rf feed structure for plasma processing
US9741575B2 (en) * 2014-03-10 2017-08-22 Taiwan Semiconductor Manufacturing Co., Ltd. CVD apparatus with gas delivery ring
KR102352739B1 (ko) * 2014-04-09 2022-01-17 어플라이드 머티어리얼스, 인코포레이티드 개선된 유동 균일성/가스 컨덕턴스로 가변 프로세스 볼륨을 처리하기 위한 대칭적 챔버 본체 설계 아키텍처
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
JP6541374B2 (ja) * 2014-07-24 2019-07-10 東京エレクトロン株式会社 基板処理装置
DE102014220220B4 (de) * 2014-10-07 2018-05-30 Carl Zeiss Smt Gmbh Vakuum-Lineardurchführung und Vakuum-System damit
US9609730B2 (en) 2014-11-12 2017-03-28 Lam Research Corporation Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas
US9773649B2 (en) 2014-11-17 2017-09-26 Lam Research Corporation Dry development and image transfer of si-containing self-assembled block copolymers
US9997373B2 (en) 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9620377B2 (en) 2014-12-04 2017-04-11 Lab Research Corporation Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
US9887097B2 (en) 2014-12-04 2018-02-06 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10170324B2 (en) 2014-12-04 2019-01-01 Lam Research Corporation Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch
US9384998B2 (en) 2014-12-04 2016-07-05 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US20160181116A1 (en) 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US11333246B2 (en) 2015-01-26 2022-05-17 Applied Materials, Inc. Chamber body design architecture for next generation advanced plasma technology
US10049862B2 (en) * 2015-04-17 2018-08-14 Lam Research Corporation Chamber with vertical support stem for symmetric conductance and RF delivery
US9673025B2 (en) * 2015-07-27 2017-06-06 Lam Research Corporation Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US9543148B1 (en) 2015-09-01 2017-01-10 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
CN107785284B (zh) * 2016-08-25 2020-06-19 北京北方华创微电子装备有限公司 开盖机构和半导体加工设备
US10892179B2 (en) * 2016-11-08 2021-01-12 Lam Research Corporation Electrostatic chuck including clamp electrode assembly forming portion of Faraday cage for RF delivery and associated methods
US10079168B2 (en) * 2016-11-08 2018-09-18 Lam Research Corporation Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control
US10534257B2 (en) 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US10276398B2 (en) 2017-08-02 2019-04-30 Lam Research Corporation High aspect ratio selective lateral etch using cyclic passivation and etching
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10763083B2 (en) 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
CN107622943A (zh) * 2017-10-13 2018-01-23 德淮半导体有限公司 半导体刻蚀机台
US10847374B2 (en) 2017-10-31 2020-11-24 Lam Research Corporation Method for etching features in a stack
KR102891545B1 (ko) 2017-11-21 2025-11-25 램 리써치 코포레이션 하단 링 및 중간 에지 링
US10658174B2 (en) 2017-11-21 2020-05-19 Lam Research Corporation Atomic layer deposition and etch for reducing roughness
US10361092B1 (en) 2018-02-23 2019-07-23 Lam Research Corporation Etching features using metal passivation
WO2019190781A1 (en) 2018-03-30 2019-10-03 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
KR20230106754A (ko) 2018-08-13 2023-07-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
US10927957B2 (en) 2018-08-22 2021-02-23 Rolls-Royce North American Technologies Inc. Deflection seal system
US10934862B2 (en) 2018-08-22 2021-03-02 Rolls-Royce Plc Turbine wheel assembly
JP6833784B2 (ja) * 2018-09-28 2021-02-24 芝浦メカトロニクス株式会社 プラズマ処理装置
JP6921796B2 (ja) 2018-09-28 2021-08-18 芝浦メカトロニクス株式会社 プラズマ処理装置
WO2020102085A1 (en) 2018-11-14 2020-05-22 Lam Research Corporation Methods for making hard masks useful in next-generation lithography
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
WO2020117594A1 (en) 2018-12-04 2020-06-11 Applied Materials, Inc. Substrate supports including metal-ceramic interfaces
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
KR102731166B1 (ko) 2018-12-20 2024-11-18 램 리써치 코포레이션 레지스트들의 건식 현상 (dry development)
WO2020154310A1 (en) 2019-01-22 2020-07-30 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US12125711B2 (en) 2019-03-18 2024-10-22 Lam Research Corporation Reducing roughness of extreme ultraviolet lithography resists
JP7198694B2 (ja) * 2019-03-18 2023-01-04 東京エレクトロン株式会社 基板リフト機構、基板支持器、及び基板処理装置
CN113785381B (zh) 2019-04-30 2025-04-22 朗姆研究公司 用于极紫外光刻抗蚀剂改善的原子层蚀刻及选择性沉积处理
TWI837391B (zh) 2019-06-26 2024-04-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR102746578B1 (ko) 2020-01-15 2024-12-26 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
US12261044B2 (en) 2020-02-28 2025-03-25 Lam Research Corporation Multi-layer hardmask for defect reduction in EUV patterning
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
CN115362414A (zh) 2020-04-03 2022-11-18 朗姆研究公司 用于增强euv光刻性能的暴露前光致抗蚀剂固化
CN111725111B (zh) * 2020-06-24 2023-08-18 北京北方华创微电子装备有限公司 半导体工艺设备的反应腔室及半导体工艺设备
KR102781895B1 (ko) 2020-07-07 2025-03-18 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR20230040310A (ko) * 2020-07-24 2023-03-22 램 리써치 코포레이션 웨이퍼 프로세싱 시스템들을 위한 고컨덕턴스 진공 밸브들
US11462388B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Plasma processing assembly using pulsed-voltage and radio-frequency power
CN112259429B (zh) * 2020-09-30 2024-06-21 北京北方华创微电子装备有限公司 一种半导体工艺设备
CN112108720B (zh) * 2020-10-18 2021-12-17 浙江启程汽车部件有限公司 一种波纹管预装配前覆层剥离设备
CN115152008A (zh) 2020-11-13 2022-10-04 朗姆研究公司 用于干法去除光致抗蚀剂的处理工具
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12394596B2 (en) 2021-06-09 2025-08-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
JP7737945B2 (ja) * 2022-03-25 2025-09-11 住友電気工業株式会社 ドライエッチング装置および半導体基板の製造方法
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
TWI815519B (zh) * 2022-06-24 2023-09-11 樂華科技股份有限公司 智慧晶圓傳送設備及其方法
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
CN118556280A (zh) * 2022-12-26 2024-08-27 株式会社日立高新技术 等离子处理装置
KR20250123420A (ko) * 2024-02-08 2025-08-18 피에스케이 주식회사 기판 처리 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030154922A1 (en) * 2002-02-19 2003-08-21 Nathan House C-chuck insulator strip

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH043927A (ja) * 1990-04-20 1992-01-08 Mitsubishi Electric Corp 半導体処理装置
JPH04343222A (ja) * 1991-05-21 1992-11-30 Mitsubishi Electric Corp プラズマ処理装置
US5522937A (en) * 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
US5534751A (en) 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
US5948704A (en) 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
KR19980027492A (ko) * 1996-10-16 1998-07-15 김광호 서셉터의 평형도를 향상시키기 위한 절연막 증착 설비
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
KR20020031219A (ko) * 2000-10-23 2002-05-01 윤종용 웨이퍼 가공장치의 서셉터 접지구조
US6778258B2 (en) * 2001-10-19 2004-08-17 Asml Holding N.V. Wafer handling system for use in lithography patterning
JP4574987B2 (ja) 2002-01-10 2010-11-04 東京エレクトロン株式会社 処理装置
JP5324026B2 (ja) * 2006-01-18 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の制御方法
US7740736B2 (en) 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
WO2009099660A2 (en) 2008-02-08 2009-08-13 Lam Research Corporation Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030154922A1 (en) * 2002-02-19 2003-08-21 Nathan House C-chuck insulator strip

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US8735765B2 (en) 2014-05-27
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