TWI443474B - 光學系統、包含此類型光學系統之用於微蝕刻的投影曝光裝置、以及以此類型投影曝光裝置製造微結構組件之方法 - Google Patents
光學系統、包含此類型光學系統之用於微蝕刻的投影曝光裝置、以及以此類型投影曝光裝置製造微結構組件之方法 Download PDFInfo
- Publication number
- TWI443474B TWI443474B TW097140946A TW97140946A TWI443474B TW I443474 B TWI443474 B TW I443474B TW 097140946 A TW097140946 A TW 097140946A TW 97140946 A TW97140946 A TW 97140946A TW I443474 B TWI443474 B TW I443474B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- field
- component group
- image
- object field
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims description 235
- 238000004519 manufacturing process Methods 0.000 title description 7
- 238000009434 installation Methods 0.000 title 2
- 238000001393 microlithography Methods 0.000 title 1
- 238000003384 imaging method Methods 0.000 claims description 91
- 210000001747 pupil Anatomy 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 23
- 238000005286 illumination Methods 0.000 claims description 21
- 238000012876 topography Methods 0.000 claims description 7
- 230000000712 assembly Effects 0.000 claims description 3
- 238000000429 assembly Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 11
- 210000000887 face Anatomy 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 210000003128 head Anatomy 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/08—Catadioptric systems
- G02B17/0836—Catadioptric systems using more than three curved mirrors
- G02B17/084—Catadioptric systems using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007051669A DE102007051669A1 (de) | 2007-10-26 | 2007-10-26 | Abbildende Optik, Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik sowie Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200923596A TW200923596A (en) | 2009-06-01 |
| TWI443474B true TWI443474B (zh) | 2014-07-01 |
Family
ID=40490317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097140946A TWI443474B (zh) | 2007-10-26 | 2008-10-24 | 光學系統、包含此類型光學系統之用於微蝕刻的投影曝光裝置、以及以此類型投影曝光裝置製造微結構組件之方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8558991B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5431345B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR101542268B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN102354045B (cg-RX-API-DMAC7.html) |
| DE (1) | DE102007051669A1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI443474B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2009052925A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8305559B2 (en) | 2008-06-10 | 2012-11-06 | Nikon Corporation | Exposure apparatus that utilizes multiple masks |
| JP5946190B2 (ja) * | 2010-07-30 | 2016-07-05 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結像光学系及びこの種の結像光学系を有するマイクロリソグラフィのための投影露光装置 |
| DE102010043498A1 (de) | 2010-11-05 | 2012-05-10 | Carl Zeiss Smt Gmbh | Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives |
| DE102011076752A1 (de) * | 2011-05-31 | 2012-12-06 | Carl Zeiss Smt Gmbh | Abbildende Optik |
| EP2579100A3 (en) | 2011-10-03 | 2017-12-06 | ASML Holding N.V. | Inspection apparatus, lithographic apparatus, and device manufacturing method |
| DE102012206153A1 (de) * | 2012-04-16 | 2013-10-17 | Carl Zeiss Smt Gmbh | Optisches System einer mikrolithographischen Projektionsbelichtungsanlage |
| US9448343B2 (en) * | 2013-03-15 | 2016-09-20 | Kla-Tencor Corporation | Segmented mirror apparatus for imaging and method of using the same |
| CA2998101C (en) | 2014-09-08 | 2022-12-06 | Christopher Robert Debone | Grid tied, real time adaptive, distributed intermittent power |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3787035T2 (de) * | 1986-03-12 | 1994-03-10 | Matsushita Electric Ind Co Ltd | Optisches Projektionssystem für Präzisionskopien. |
| JP2890882B2 (ja) | 1990-04-06 | 1999-05-17 | キヤノン株式会社 | 位置付け方法、半導体デバイスの製造方法及びそれを用いた投影露光装置 |
| US6631036B2 (en) | 1996-09-26 | 2003-10-07 | Carl-Zeiss-Stiftung | Catadioptric objective |
| TW448487B (en) * | 1997-11-22 | 2001-08-01 | Nippon Kogaku Kk | Exposure apparatus, exposure method and manufacturing method of device |
| WO1999049366A1 (en) * | 1998-03-20 | 1999-09-30 | Nikon Corporation | Photomask and projection exposure system |
| JPH1184249A (ja) * | 1998-07-10 | 1999-03-26 | Nikon Corp | 露光装置、及び該装置を用いた露光方法 |
| DE19846928A1 (de) * | 1998-10-12 | 2000-04-13 | Zeiss Carl Fa | Abbildungssystem mit einem Zylinderlinsenarray |
| JP2000284494A (ja) * | 1999-03-31 | 2000-10-13 | Seiko Epson Corp | 露光装置 |
| US6600608B1 (en) | 1999-11-05 | 2003-07-29 | Carl-Zeiss-Stiftung | Catadioptric objective comprising two intermediate images |
| JP4714403B2 (ja) * | 2001-02-27 | 2011-06-29 | エーエスエムエル ユーエス,インコーポレイテッド | デュアルレチクルイメージを露光する方法および装置 |
| DE50208750D1 (de) * | 2001-08-01 | 2007-01-04 | Zeiss Carl Smt Ag | Reflektives Projektionsobjektiv für EUV-Photolithographie |
| JP2004107011A (ja) * | 2002-09-18 | 2004-04-08 | Asmo Co Ltd | 給紙装置 |
| JP2004252363A (ja) * | 2003-02-21 | 2004-09-09 | Canon Inc | 反射型投影光学系 |
| JP4314054B2 (ja) | 2003-04-15 | 2009-08-12 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
| JP2005166897A (ja) * | 2003-12-02 | 2005-06-23 | Canon Inc | 露光装置 |
| DE602005008707D1 (de) * | 2004-01-14 | 2008-09-18 | Zeiss Carl Smt Ag | Catadioptrisches projektionsobjektiv |
| JP2005345582A (ja) * | 2004-06-01 | 2005-12-15 | Dainippon Screen Mfg Co Ltd | 投影光学系およびパターン描画装置 |
| US20060082905A1 (en) * | 2004-10-14 | 2006-04-20 | Shafer David R | Catadioptric projection objective with an in-line, single-axis configuration |
| DE102005030839A1 (de) * | 2005-07-01 | 2007-01-11 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage mit einer Mehrzahl von Projektionsobjektiven |
| US7612892B2 (en) | 2005-10-06 | 2009-11-03 | Nikon Corporation | Imaging optical system configured with through the lens optics for producing control information |
| US7782442B2 (en) | 2005-12-06 | 2010-08-24 | Nikon Corporation | Exposure apparatus, exposure method, projection optical system and device producing method |
| KR20080088579A (ko) | 2005-12-28 | 2008-10-02 | 가부시키가이샤 니콘 | 노광 장치 및 노광 방법, 디바이스 제조 방법 |
| JP2007201457A (ja) * | 2005-12-28 | 2007-08-09 | Nikon Corp | 露光装置及び露光方法、並びにデバイス製造方法 |
| JP2007206319A (ja) * | 2006-02-01 | 2007-08-16 | Nikon Corp | 反射屈折光学系、露光装置及びマイクロデバイスの製造方法 |
| WO2007094407A1 (ja) * | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| WO2007094414A1 (ja) * | 2006-02-16 | 2007-08-23 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| US7916270B2 (en) * | 2006-03-03 | 2011-03-29 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| CN101379593A (zh) * | 2006-04-14 | 2009-03-04 | 株式会社尼康 | 曝光装置、元件制造方法以及曝光方法 |
| DE102006022958A1 (de) | 2006-05-11 | 2007-11-22 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage, Projektionsbelichtungsverfahren und Verwendung eines Projektionsobjektivs |
| KR100772701B1 (ko) | 2006-09-28 | 2007-11-02 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
-
2007
- 2007-10-26 DE DE102007051669A patent/DE102007051669A1/de not_active Ceased
-
2008
- 2008-10-02 WO PCT/EP2008/008336 patent/WO2009052925A1/en not_active Ceased
- 2008-10-02 CN CN201110371663.0A patent/CN102354045B/zh not_active Expired - Fee Related
- 2008-10-02 CN CN200880113386XA patent/CN101836151B/zh not_active Expired - Fee Related
- 2008-10-02 JP JP2010530296A patent/JP5431345B2/ja not_active Expired - Fee Related
- 2008-10-02 KR KR1020107009120A patent/KR101542268B1/ko not_active Expired - Fee Related
- 2008-10-24 TW TW097140946A patent/TWI443474B/zh not_active IP Right Cessation
-
2010
- 2010-04-12 US US12/758,530 patent/US8558991B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200923596A (en) | 2009-06-01 |
| DE102007051669A1 (de) | 2009-04-30 |
| KR101542268B1 (ko) | 2015-08-06 |
| JP2011501446A (ja) | 2011-01-06 |
| JP5431345B2 (ja) | 2014-03-05 |
| KR20100069700A (ko) | 2010-06-24 |
| US20100231884A1 (en) | 2010-09-16 |
| CN102354045B (zh) | 2014-09-24 |
| WO2009052925A1 (en) | 2009-04-30 |
| CN101836151A (zh) | 2010-09-15 |
| US8558991B2 (en) | 2013-10-15 |
| CN102354045A (zh) | 2012-02-15 |
| CN101836151B (zh) | 2012-12-05 |
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Legal Events
| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |