TWI442468B - Plasma processing device and plasma processing method - Google Patents

Plasma processing device and plasma processing method Download PDF

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Publication number
TWI442468B
TWI442468B TW098105258A TW98105258A TWI442468B TW I442468 B TWI442468 B TW I442468B TW 098105258 A TW098105258 A TW 098105258A TW 98105258 A TW98105258 A TW 98105258A TW I442468 B TWI442468 B TW I442468B
Authority
TW
Taiwan
Prior art keywords
film
metal
wafer
plasma
processing chamber
Prior art date
Application number
TW098105258A
Other languages
English (en)
Chinese (zh)
Other versions
TW201029064A (en
Inventor
角屋誠浩
田中基裕
廣田侯然
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201029064A publication Critical patent/TW201029064A/zh
Application granted granted Critical
Publication of TWI442468B publication Critical patent/TWI442468B/zh

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Classifications

    • H10P50/267—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H10P50/285—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
TW098105258A 2009-01-30 2009-02-19 Plasma processing device and plasma processing method TWI442468B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009018958A JP5377993B2 (ja) 2009-01-30 2009-01-30 プラズマ処理方法

Publications (2)

Publication Number Publication Date
TW201029064A TW201029064A (en) 2010-08-01
TWI442468B true TWI442468B (zh) 2014-06-21

Family

ID=42398059

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098105258A TWI442468B (zh) 2009-01-30 2009-02-19 Plasma processing device and plasma processing method

Country Status (3)

Country Link
US (2) US8236701B2 (enExample)
JP (1) JP5377993B2 (enExample)
TW (1) TWI442468B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5377993B2 (ja) * 2009-01-30 2013-12-25 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP5377587B2 (ja) * 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
US20130115778A1 (en) * 2011-11-04 2013-05-09 Applied Materials, Inc. Dry Etch Processes
JP5841917B2 (ja) * 2012-08-24 2016-01-13 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
JP6180799B2 (ja) 2013-06-06 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6224359B2 (ja) * 2013-06-20 2017-11-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置のためのスケジュール作成方法およびスケジュール作成プログラム
US11164753B2 (en) 2014-01-13 2021-11-02 Applied Materials, Inc. Self-aligned double patterning with spatial atomic layer deposition
US9304283B2 (en) * 2014-05-22 2016-04-05 Texas Instruments Incorporated Bond-pad integration scheme for improved moisture barrier and electrical contact
JP6919350B2 (ja) * 2017-06-09 2021-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US10636686B2 (en) 2018-02-27 2020-04-28 Lam Research Corporation Method monitoring chamber drift

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287977B1 (en) * 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6139702A (en) * 1999-03-05 2000-10-31 United Microelectronics Corp. Seasoning process for etcher
JP2002083974A (ja) * 2000-06-19 2002-03-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP2002025977A (ja) * 2000-07-06 2002-01-25 Hitachi Ltd ドライエッチング方法
US20030013314A1 (en) * 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
JP4444569B2 (ja) 2002-05-01 2010-03-31 ポリマテック株式会社 キー入力装置
US7094704B2 (en) * 2002-05-09 2006-08-22 Applied Materials, Inc. Method of plasma etching of high-K dielectric materials
JP4365109B2 (ja) * 2003-01-29 2009-11-18 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4504061B2 (ja) * 2004-03-29 2010-07-14 東京エレクトロン株式会社 プラズマ処理方法
US7598167B2 (en) * 2004-08-24 2009-10-06 Micron Technology, Inc. Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures
KR100598051B1 (ko) * 2005-02-07 2006-07-10 삼성전자주식회사 반도체 소자의 제조방법
JP2007005381A (ja) * 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd プラズマエッチング方法、及びプラズマエッチング装置
JP4849881B2 (ja) * 2005-12-08 2012-01-11 株式会社日立ハイテクノロジーズ プラズマエッチング方法
DE102006055038B4 (de) * 2006-11-22 2012-12-27 Siltronic Ag Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
JP2009021584A (ja) * 2007-06-27 2009-01-29 Applied Materials Inc 高ｋ材料ゲート構造の高温エッチング方法
JP5377993B2 (ja) * 2009-01-30 2013-12-25 株式会社日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
JP2010177480A (ja) 2010-08-12
TW201029064A (en) 2010-08-01
US20120252200A1 (en) 2012-10-04
US20100197137A1 (en) 2010-08-05
JP5377993B2 (ja) 2013-12-25
US8236701B2 (en) 2012-08-07

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