TWI440685B - 具有優質毛邊特性及可靠度之切割黏晶膜及其應用之半導體裝置 - Google Patents

具有優質毛邊特性及可靠度之切割黏晶膜及其應用之半導體裝置 Download PDF

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Publication number
TWI440685B
TWI440685B TW97150041A TW97150041A TWI440685B TW I440685 B TWI440685 B TW I440685B TW 97150041 A TW97150041 A TW 97150041A TW 97150041 A TW97150041 A TW 97150041A TW I440685 B TWI440685 B TW I440685B
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Taiwan
Prior art keywords
dicing die
film
resin
adhesive layer
wafer
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TW97150041A
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English (en)
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TW200930782A (en
Inventor
Hyun Jee Yoo
Jang Soon Kim
Jong Wan Hong
Hyo Soon Park
Dong Han Kho
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Lg Chemical Ltd
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Publication of TW200930782A publication Critical patent/TW200930782A/zh
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Publication of TWI440685B publication Critical patent/TWI440685B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0025—Crosslinking or vulcanising agents; including accelerators
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/13—Phenols; Phenolates
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/34—Heterocyclic compounds having nitrogen in the ring
    • C08K5/3442—Heterocyclic compounds having nitrogen in the ring having two nitrogen atoms in the ring
    • C08K5/3445—Five-membered rings
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    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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    • C09J133/068—Copolymers with monomers not covered by C09J133/06 containing glycidyl groups
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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Description

具有優質毛邊特性及可靠度之切割黏晶膜及其應用之半導體裝置
本發明係關於一種切割黏晶膜及半導體裝置，尤指一種黏晶膜之黏著力與切割膜之膠黏力呈一控制比例之切割黏晶膜及其應用之半導體裝置，於半導體封裝製程之切割步驟中，其可減少毛邊之產生。
隨著半導體晶片微小化及高積集度之發展，更為先進封裝之其中一種係為多晶片封裝(multi chip package，MCP)。多晶片封裝係一種於晶片上黏著另一晶片之技術，而相較於先前技術，多晶片封裝可藉此於同等尺寸之封裝中黏著更加多數之元件。
多晶片封裝方法(MCP)係使用膜狀黏著劑來取代現存的液態環氧膠(日本特許公開專利公開號H3-192178及H4-234472)，以將半導體晶片與半導體基板黏結。使用膜狀黏著劑之方法包括膜元件黏著法(film component adhesion method)及晶圓背面黏著法(wafer backside adhesion method)。於膜元件黏著法中，膜狀黏著劑會被切割或衝切(punch)成適於晶片之片塊，接著再黏著至半導體基板。爾後，由晶圓取得晶片，並於半導體基板上進行黏晶(die bonding)，接著透過後製程(如打線及封膠)便可製得半導體裝置。
另一方面，於晶圓背面黏著法中，膜狀黏著劑之一側係貼附於晶圓之背面，而具有膠黏層之切割膠帶(dicing tape)係另外貼附於膜狀黏著劑之另一側，且未與該晶圓之背面貼附，再將晶圓切割成個別晶片。取出分離之晶片，並將其黏晶至半導體基板，再透過打線及封膠而製得半導體裝置。晶圓背面黏著法有高功能半導體裝置之薄晶圓運送、增加製程數、不同晶片厚度及尺寸設計、膜薄化及可靠度之困難。
為了解決上述問題，已發展出將一膜層(於一層中具有黏著劑及膠黏劑)黏著至晶圓背面之方法(日本特許公開專利公開號H2-32181、H8-53655及H10-8001)。此種方法無需兩次層壓步驟，其僅需進行一次層壓步驟即可，且其提供有支撐晶圓之晶圓環，因而無晶圓運送之問題。於上述之文獻中，由基材及膠黏/黏著劑(由特定組成物所構成)所組成之切割黏晶集成膜(dicing die bonding integrated film)，包括混合之輻射線固化膠黏劑及熱固化黏著劑。於切割過程中，該黏著劑係扮演膠黏劑之角色，之後透過輻射線固化步驟，其將失去黏性，以便於由晶圓取得晶片。同時，於黏晶過程中，將該黏著劑熱固化為一黏著劑，以使晶片可穩固地黏著至半導體基板。然而，於輻射線固化後，該切割黏晶集成膜之膠黏力不夠低，因此，於切割後之半導體晶片取出過程中，該晶片可能不易由基板分離，據此可能造成劣化。
為了解決集成膜之問題，已發展出一種由兩層膠黏層(tacky layer)及黏著層(adhesive layer)所組成之切割黏晶分離膜，據此於切割過程中，其可作為切割膠帶，且於黏晶過程中，其亦可作為黏著劑。於切割步驟後，由於該膠黏層與黏著層可藉由熱固化或輻射固化方式而輕易分離，因此於半導體晶片取得過程中，該切割黏晶分離膜並不會造成任何問題，且於黏晶過程中，其亦便於薄化膜厚度。基於上述之優點，雖然膜狀黏著劑於黏著至半導體基板時有填充之問題，但相較於現有之液態環氧膠，該膜狀黏著劑更常用於實際之封裝步驟中。
然而，該切割黏晶分離膜係為多層結構，據此，兩層相異之性質將造成切割過程中發生嚴重的外部狀態，因而導致毛邊現象。因此，為了將切割黏晶分離膜應用於半導體晶片，其將趨於具有高可靠度之更加薄小設計，故目前亟需發展一種方法，其除了可確保該切割黏晶膜之基本性質外，亦能確保層間性質之協調性，以使毛邊現象可降到最低。
本發明係為解決先前技術所發生之上述問題。本發明之一目的係在提供一種切割黏晶膜，其係藉由確保多層結構之切割黏晶膜之層間性質協調性，以將切割過程中之毛邊產生降至最低，進而改善封裝製程之可靠度，且本發明亦提供其應用之半導體晶圓及半導體裝置。
為達成目的，本發明之一態樣係提供一種切割黏晶膜，其包括：一黏晶部，其具有貼附至晶圓之黏著層；一切割部，其具有一膠黏層，其中晶圓與黏晶部之黏著層間之黏著力X，比上黏晶部與切割部之膠黏層間之膠黏力Y(即X/Y比例)為0.15至1，且於正常溫度下，該黏晶部之黏著層具有100至1000MPa之儲存模數(storage modulus)。
為達成目的，本發明之另一態樣係提供一種半導體晶圓，其中，本發明切割黏晶膜之黏著層係貼附於晶圓之一側，而切割黏晶膜之膠黏層係固定於晶圓環架。
為達成目的，本發明之再一態樣係提供一種半導體裝置，其包括：一線路基板；本發明切割黏晶膜之黏著層，其係貼附至黏固於線路基板表面之晶片；以及一半導體晶片，其係黏固於該黏著層上。
當切割黏晶膜貼附於晶圓背面，且切割成晶片時，本發明之切割黏晶膜可將黏著層之毛邊產生降至2%以下，且貼附時，不會有毛邊覆蓋打線墊所導致之連接可靠度下降之問題，因而可製得具有優異可靠度之半導體裝置。
本發明係關於一種切割黏晶膜，其包括：一黏晶部，其具有黏附至一晶圓之黏著層；以及一切割部，其具有一膠黏層，其中，晶圓與黏晶部之黏著層間之黏著力X，比上黏晶部與切割部之膠黏層間之膠黏力Y(即X/Y比例)為0.15至1，且於正常溫度下，該黏晶部之黏著層具有100至1000MPa之儲存模數(storage modulus)。
一般而言，於切割過程中(將形成圖樣之半導體晶圓切離)，晶圓與黏附有鑽石粒之旋轉葉片間之摩擦將導致溫度上升。此熱將傳導至貼附於晶圓背面之切割黏晶膜，因而使切割線中之聚合物聚集，而於交叉切割之過程中，晶片邊緣之旋轉葉片則可能造成毛邊產生。
若晶圓與黏晶部之黏著層間之黏著力X，比上黏晶部與切割部之膠黏層間之膠黏力Y(即X/Y比例)係0.15至1，則可減少上述因素所導致之毛邊現象。晶圓與黏晶部之黏著層間之黏著力X，比上黏晶部與切割部之膠黏層間之膠黏力Y(即X/Y比例)較佳為0.2至0.8，更佳為0.25至0.5。若比例小於0.15，則毛邊產生率增加。此外，若將晶片切分成更小尺寸，則晶片與黏晶部之黏著層間可能發生分離現象，而晶片可能因而分散開來。再者，若比例超過1，則晶圓由切割膠帶分離之特性可能不佳。
另外，於正常溫度下，應用於本發明切割黏晶膜之黏晶部之黏著層具有100至1000MPa之儲存模數(storage modulus)，較佳為100至500MPa，更佳為100至300MPa。若黏晶部之黏著層儲存模數於正常溫度下低於100MPa，雖然黏著層貼附至晶圓之緊密黏著性可獲改善，但膜本身之耐熱性將劣化，因而對高溫可靠度有不良影響。若儲存模數於正常溫度下超過1000MPa，則貼附至晶圓之緊密黏著性將劣化，因而導致毛邊形成或晶片分散。
再者，於切割黏晶膜中，晶圓與黏晶部之黏著層間之黏著力X係20gf以上。該黏著力X較佳為25至100gf，更佳為30至75gf。若黏著力X低於20gf，則黏晶部之黏著層貼附至晶圓背面之黏著力將劣化，其可能導致切割過程中晶片分散之問題。
以下將詳細敘述本發明切割黏晶膜之組成份。
具有黏著層之黏晶部
於本發明中，該黏晶部之黏著層應同時滿足封裝中晶片與基板間之彎折及應力釋放特性。該晶片具有4ppm/℃之熱膨脹係數(CTE)，而該基板則具有10至15ppm/℃之熱膨脹係數，據此，相異之熱膨脹係數可能導致高溫下發生彎曲及撕裂現象。
因此，為達上述特性，本發明之黏著層使用：a)熱固性多官能環氧樹脂，以降低熱膨脹係數，進而將彎曲現象降至最低，並改善如黏著力及耐熱性之特性；以及b)低彈性高分子樹脂，以減緩高溫及低溫下之應力。也就是說，由於兩種具有不同彈性之樹脂利用高分子合金技術而相互混合使用，故可使柔軟性及剛硬性同時存在，因而滿足兩者性質。
a)熱固性多官能環氧樹脂
使用於本發明之a)熱固性多官能環氧樹脂可包括任何樹脂，其並無限制，只要其主鏈包括有至少兩個環氧基，且其玻璃轉移溫度於50℃以上即可。舉例而言，可使用主鏈上具有芳香性結構重複單元之環氧樹脂(其為環氧骨架)。若玻璃轉移溫度低於50℃，則黏著層之黏著力將增加，因而導致該黏著層難以操作，同時，由切割膠帶剝離之特性亦可能因而劣化。
該環氧樹脂可藉由固化步驟形成交聯結構，使其硬化並具有優異之黏著力、耐熱性及機械強度等。
該熱固性多官能環氧樹脂較佳具有180至1000之平均環氧當量。若環氧當量低於180，則交聯密度過高，導致整個黏著層可能展現剛性。若環氧當量超過1000，則玻璃轉移溫度可能降低，而與本發明所需之耐高溫特性背道而馳。舉例而言，該環氧樹脂可為甲酚醛環氧樹脂(cresol novolac epoxy resin)、雙酚A型酚醛環氧樹脂(bisphenol A-type novolac epoxy resin)、酚系酚醛環氧樹脂(phenol novolac epoxy resin)、4-官能基環氧樹脂(4-functional epoxy resin)、聯苯型環氧樹脂(biphenyl-type epoxy resin)、三-酚甲烷型環氧樹脂(tri-phenol methane-type epoxy resin)、烷基改性三-酚甲烷環氧樹脂(alkyl-modified tri-phenol methane epoxy resin)、萘型環氧樹脂(naphthalene-type epoxy resin)、雙環戊二烯型環氧樹脂(dicyclopentadiene-type epoxy resin)或雙環戊二烯改性酚型環氧樹脂(dicyclopentadiene-modified phenol-type epoxy resin)，其可單獨或混合至少兩者使用。
該熱固性多官能環氧樹脂較佳具有50至100℃之軟化溫度。若軟化點低於50℃，則A-階態(A-stage state)黏著層之模數將劣化，而黏著力增加，導致其操作性不佳。若軟化點高於100℃，則貼附至晶圓之特性將劣化，因而導致切割過程中發生晶片分散現象。
以100重量份之b)低彈性高分子樹脂為基準，該熱固性多官能環氧樹脂之含量較佳為10至200重量份，更佳為20至100重量份。若含量低於10重量份，則耐熱性及操作性不佳。若含量超過200重量份，則膜剛性增加，因而導致其使用性及可靠性劣化。
b)低彈性高分子樹脂
使用於本發明之b)低彈性高分子樹脂具有50℃以上之玻璃轉移溫度，其於固化前維持為具有高分子量之膜形狀，並與a)熱固性多官能環氧樹脂或c)固化劑形成交聯結構(將於後敘述)，且於成為交聯材料後，其仍具有黏彈性。所有具有上述特性之樹脂皆可使用，而無限制。此外，當其為形成膜狀前之清漆狀時，應與a)熱固性多官能環氧樹脂及c)固化劑相容，且應具有儲存穩定性，如不會發生相分離現象。
於固化前，該低彈性高分子樹脂較佳具有-30至50℃之玻璃轉移溫度，更佳為-20至40℃，最佳為0至30℃。若玻璃轉移溫度低於-30℃，則膜成型之過程中，其流動性增加，將有操作性低下之問題。若玻璃溫度超過50℃，則其貼附於晶圓之性質將劣化，因而導致切割過程中發生晶片分散之問題，或者發生洗滌水穿透至黏著層與晶片間之現象。
該低彈性高分子樹脂較佳具有100,000至2,500,000之平均分子量，更佳為100,000至800,000。若平均分子量低於100,000，則膜強度不佳，因而使其操作性及耐熱性下降，而於半導體基板之電路填充過程中，無法控制其流動性。若平均分子量超過2,500,000，則彈性模數增加，而於黏晶過程中，其流動性嚴重下降，因而降低其可靠度及黏著層之電路填充。
具有玻璃轉移溫度為-30至50℃且平均分子量為100,000至2,500,00之低彈性高分子樹脂，較佳為本身具有優異彈性之結構，舉例而言，其可為包含羧基丁腈橡膠(nitrile butadiene rubber,NBR)；具有高分子量之脂肪族環氧；橡膠改性環氧；包含縮水甘油基、羧基、羥基或胺基之丙烯酸共聚物；馬來酸改性苯乙烯-乙烯-丁二烯-苯乙烯共聚物(maleic acid-modified styrene ethylene butadiene styrene copolymer,SEBS)或其類似者，其可單獨或混合至少兩者使用。
c)固化劑
黏晶部之黏著層更可包括一固化劑。使用於本發明之c)固化劑可包括任何樹脂，而無限制，只要其可與a)熱固性多官能環氧樹脂及/或b)低彈性高分子樹脂反應形成交聯結構即可。然而，由於固化劑係分別與提供柔軟性之b)低彈性高分子樹脂及提供剛硬性之a)熱固性多官能環氧樹脂形成交聯結構，以改善黏著固化材料之耐熱性，同時，其亦於a)熱固性多官能環氧樹脂與b)低彈性高分子樹脂間之界面處作為兩者樹脂間之連結，以大幅改善半導體封裝之可靠度，因此，該固化劑較佳係包括：可與a)熱固性多官能環氧樹脂及b)低彈性高分子樹脂兩者發生反應以形成交聯結構之樹脂。
基於耐熱性之考量，較佳係使用多官能酚樹脂做為該類樹脂，而酚樹脂係具有100至1000之羥基當量。雖然根據固化材料種類將有所不同，但當羥基當量低於100時，與環氧反應之固化材料通常會硬化，因而使半導體封裝中黏著層之緩和效應劣化。若羥基當量超過1000，則與環氧反應之固化材料的交聯密度不佳，使其耐熱性下降。
該多官能酚樹脂可包括雙酚A樹脂、酚系酚醛樹脂、甲酚醛樹脂、雙酚A酚醛樹脂、芳烷基酚樹脂、多官能酚醛樹脂、雙環戊二烯酚醛樹脂、胺三嗪酚醛樹脂(amino triazine phenol novolac resin)、聚丁二烯酚醛樹脂(polybutadiene phenol novolac resin)、雙苯基型樹脂或其他種類之多官能樹脂，其可單獨或混合至少兩者使用。
此外，該固化劑較佳係具有50至150℃之軟化點。若其軟化點低於50℃，則其黏著力增加，因而使其操作性劣化，且耐熱性不佳。若軟化點高於150℃，則黏著層之硬度增加，因而使黏著層與晶圓間之黏著力劣化，於切割過程中將發生晶片分散之問題。
該固化劑之當量較佳為a)熱固性多官能環氧樹脂之環氧當量之0.4至2倍，更佳為0.8至1.2倍。若固化劑之當量低於a)熱固性多官能環氧樹脂之環氧當量之0.4倍，則會殘留大量未反應之環氧，因而使其玻璃轉移溫度及耐熱性下降，而為了使未反應之環氧反應，則應於高溫下提供熱量或長時間供應熱量。若固化劑之當量高於a)熱固性多官能環氧樹脂之環氧當量之2倍，雖然交聯密度增加，但未反應之羥基可能使其儲存穩定性下降，吸濕率及介電性增加。
d)固化增進劑
黏晶部之黏著層更可包括固化增進劑。使用於本發明之固化增進劑於種類上並無特殊限制，其可包括咪唑、三苯膦(TPP)、三级胺其其類似者。咪唑固化增進劑可為2-甲基咪唑(2MZ)、2-乙基-4-甲基咪唑(2E4MZ)、2-苯基咪唑(2PZ)、1-氰乙基-2-苯基咪唑(2PZ-CN)、2-十一烷基咪唑(C11Z)、2-十七烷基咪唑(C17Z)、或1-氰乙基-2-苯基咪唑三甲基酯(1-cyanoethyl-2-phenylimidazole trimethalate,2PZ-CNS)，其可單獨或混合至少兩者使用。
基於a)熱固性多官能環氧樹脂及b)低彈性高分子樹脂之總量為100重量份計，該固化增進劑之含量較佳為0.1至10重量份，更佳為0.5至3。若固化增進劑之含量低於0.1重量份，則反應速率不佳，環氧樹脂之反應不充分，因而導致耐熱性劣化。若含量超過10重量份，則固化反應過快，因而使其儲存穩定性下降。
e)無機填料
黏晶部之黏著層更可包括無機填料。添加無機填料可改善操作性及耐熱性，且可控制熔融黏度。該填料可包括有機填料及無機填料，其中，無機填料具有較佳之特性。該無機填料並無特殊限制，較佳為矽、氫氧化鋁、碳酸鈣、氫氧化鎂、氧化鋁、滑石、氮化鋁或其類似者。
該填料之含量並無特殊限制，以100重量份之樹脂(未包含填料)為基準，其較佳為0.5至100重量份，更佳為5至50重量份。若含量低於0.5重量份，則填料之添加量不足，而無法改善耐熱性及操作性。若含量超過100重量份，則其使用性及基板黏著性將下降。
該填料之平均直徑較佳為0.001至10μm，更佳為0.005至1μm。若平均直徑小於0.001μm，則填料容易於黏著層中凝結，因而導致其外觀不佳。此外，若平均直徑超過10μm，則填料可能容易由黏著層表面突出，因而損害與晶圓熱壓縮之晶片，使其黏著性劣化。
保護膜
本發明切割黏晶膜之黏晶部較佳係包括一保護膜於該黏著層之一側上。此外，該保護膜較佳係處理為可移除式。
可使用於本發明之該保護膜可包括一塑膠膜，如聚對苯二甲酸乙二酯膜、聚四氟乙烯膜、聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯膜、氯乙烯共聚物膜、聚醯亞胺膜及其類似者。
此外，對保護膜表面進行離型處理之離型劑(releasing agent)可為醇酸類樹脂、矽類樹脂、氟類樹脂、不飽和酯類樹脂、聚烯烴類樹脂或臘類樹脂，其中，醇酸類樹脂、矽類樹脂或氟類樹脂因其耐熱性而尤佳。
該保護膜一般具有10至500μm之厚度，較佳為20至200μm。若其厚度小於10μm，則該膜容易於乾燥過程中變形，因而使黏著層呈現不規則外觀。該膜厚度若超過500μm則不符合經濟效益。
黏晶部之製作方法
本發明切割黏晶膜之黏晶部可藉由以下步驟製得：溶解或分散上述黏著層組成物於溶劑中，以製得樹脂清漆(resin varnish)；將該樹脂清漆塗附於經離型處理之保護膜上；以及加熱該保護膜，以移除溶劑。
該黏著層之組成物已於上文描述，而用於製備該黏著層組成物之清漆組成溶劑(varnish-making solvent)一般可為丁酮(methyl ethyl ketone，MEK)、丙酮、甲苯、二甲基甲醯胺(dimethylformamide，DMF)、甲基溶纖劑(methylcellosolve，MCS)、四氫呋喃(tetrahydrofuran，THF)或N-甲基吡咯烷酮(N-methylpyrrolidone,NMP)。由於保護膜之耐熱性不佳，故較佳係使用低沸點之溶劑。然而，亦可使用高沸點之溶劑，以改善膜均勻度，且可混合使用至少兩種該類溶劑。
該樹脂清漆可藉由習知方法塗附於該保護膜。舉例而言，可使用刮塗、滾筒式塗佈、噴灑式塗佈、凹版塗佈、淋幕塗佈(curtain coatin)、刮刀式塗佈(comma coating)或葉式塗佈(leaf coating)。
當黏著層組成物中包含有填料時，可單獨或合併使用球磨機、砂磨機、三滾筒或粉碎機，以增加黏著層中之分散性。球粒或砂粒可由玻璃、鋁或鋯組成，其中，由鋯組成之球粒或砂粒具有較佳之顆粒分散性。
於本發明中，溶劑與填料於球磨機或砂磨機中混合一特定時間，接著將a)熱固性多官能環氧樹脂及c)固化劑加入混合，最後混合c)低彈性高分子樹脂及所需之添加物(其可縮短混合時間及確保優異之分散性)。
此外，當加熱保護膜以移除溶劑時，較佳之加熱狀態為70至250℃，且1至10分鐘。
具有膠黏層之切割部
本發明切割部之膠黏層無限制可包括任何膠黏劑，只要其於切割過程中可固定晶圓環及晶圓，以避免晶片於切離時分散，且藉由熱及/或輻射可使其失去膠黏力，以確保取出過程順利即可。一般而言，可使用丙烯酸系共聚物作為膠黏劑。
作為本發明熱固性膠黏劑之丙烯酸系共聚物並無特殊限制，其較佳可包括所有可用於本領域之膠黏劑。舉例而言，較佳使具有C1-12 烷基之(甲基)丙烯酸酯系單體與含交聯官能基之單體進行共聚合，以製得該丙烯酸系共聚物。
具有C1-12 烷基之(甲基)丙烯酸酯系單體可包括甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、正丙基(甲基)丙烯酸酯、異丙基(甲基)丙烯酸酯、丁基(甲基)丙烯酸酯、第三丁基(甲基)丙烯酸酯、戊基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、正辛基(甲基)丙烯酸酯、正十四烷基(甲基)丙烯酸酯及其類似物，其可單獨或混合至少兩者使用。
此外，含交聯官能基之單體可舉例包括：含羥基單體，如2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、4-羥基丁基(甲基)丙烯酸酯、6-羥基己基(甲基)丙烯酸酯、2-羥基乙二醇(甲基)丙烯酸酯或2-羥基丙二醇(甲基)丙烯酸酯；含羧基單體，如(甲基)丙烯酸、馬來酸或反丁烯二酸；含氮單體，如丙烯醯胺、N-乙烯基吡咯啉酮或N-乙烯基-己內醯胺；及其類似物，其中可單獨或混合至少兩者使用。
烷基(甲基)丙烯酸酯系單體與含交聯官能基單體之重量比並無限制，但較佳為，以100重量份之(甲基)丙烯酸酯系單體為基準，含交聯官能基之單體含量為1至20重量份。
為了使該丙烯酸系共聚物具有膠黏力及縮合力(condensing power)，該烷基(甲基)丙烯酸酯系單體可與具有高玻璃轉移溫度之共單體進行共聚合。可共聚合之共單體可包括甲基丙烯酸酯、甲基甲基丙烯酸酯、乙基甲基丙烯酸酯、醋酸乙烯、苯乙烯、丙烯腈及其類似物，其可單獨或混合至少兩者使用。較佳為任何具有可共聚合乙烯基之單體。
於本發明中，該丙烯酸系共聚物之聚合反應並無特殊限制，但較佳可藉由如溶液聚合法、光聚合法、本體聚合法、懸浮聚合法、及乳化聚合法等各種聚合方法，其中以溶液聚合法為較佳。
此外，該膠黏層可包括一多官能交聯劑，以控制膠黏劑之膠黏特性。該多官能交聯劑係藉由與羧基及羥基反應，以提高該膠黏劑之縮合力(condensing power)，並控制膠黏力。以100重量份之丙烯酸系共聚物為基準，該多官能交聯劑之含量較佳為0.01至10重量份。
多官能交聯劑可包括異氰酸系、環氧系、氮丙啶系(aziridine-based)、金屬螯合系交聯劑及其類似物，其中以異氰酸系交聯劑為較佳。異氰酸系交聯劑可包括二異氰酸酯(tolylenediisocyanate)、二異氰酸二甲苯酯(xylenediisocyanate)、二苯基亞甲基二異氰酸酯(diphenylmethanediisocyanate)、六亞甲基二異氰酸酯(hexamethylenediisocyanate)、二異氰酸酯異構物(isoform diisocyanate)、四甲基二甲苯二異氰酸酯(tetramethylxylene diisocyanate)、萘二異氰酸酯(naphthalenediisocyanate)及其與多元醇(如三羥甲基丙烷)之反應物。
此外，環氧系交聯劑可為乙二醇二縮水甘油醚(ethyleneglycoldiglycidylether)、三縮水甘油醚(triglycidylether)、三羥甲基丙烷三縮水甘油醚(trimethyolpropanetriglycidylether)、N,N,N,N’-四縮水甘油基乙二胺(N,N,N,N’-tetraglycidylethylenediamine)、甘油二縮水甘油醚(glycerin diglycidylether)或其類似物。氮丙啶系交聯劑可為N,N’-甲苯-2,4-雙(1-羰基氮丙啶)(N,N’-toluene-2,4-bis(1-aziridinecarboxide))、N,N’-二苯基甲烷-4,4’-雙(1-羰基氮丙啶)(N,N’-diphenylmethane-4,4’-bis(1-aziridinecarboxyde))、三亞乙基密胺(triethylenemelamine)、二異二氧丙嗪-1-(2-甲基氮丙啶(bisisoprothaloyl-1-(2-methylaziridine))、三-1-氮丙啶基氧化膦(tri-1-aziridinylphosphineoxide)或其類似物。
金屬螯合系交聯劑可包括多價金屬(如鋁、鐵、錫、鋅、鈦、銻、鎂及釩)配位至乙醯丙酮或乙醯乙酸乙酯之化合物。
本發明之膠黏層無需使用任何特殊方法即可製得，其可藉由一般方法，將丙烯酸系共聚物與多官能交聯劑混合而製得。在此，惟官能基交聯反應未於製備膠黏層之混合步驟大量進行時，該多官能交聯劑可進行均勻塗佈之步驟。若完成該塗佈步驟，並於後進行乾燥及熟成步驟(aging process)，則可形成交聯結構，製得具有彈性及強縮合力之膠黏層。同時，膠黏劑之強膠黏力可改善膠黏及切割特性，如膠黏物之耐久性及可靠度。
於本發明中，基於特殊目的，可額外混合丙烯酸系低分子材料、具膠黏性之樹脂、環氧樹脂、固化劑及其類似物，且根據一般目的，可適當添加紫外光穩定劑、抗氧化劑、著色劑、增強劑、填料、消泡劑、界面活性劑、可塑劑、發泡劑及其類似物。
輻射線固化膠黏劑可為橡膠-減壓膠黏劑(rubber-decompression tacky agent)、丙烯酸系膠黏劑或其類似物。輻射線固化膠黏劑可藉由添加輻射線固化組成物於熱固化膠黏劑中而製得。該組成物可為具有至少兩個不飽和鍵之加成聚合化合物、光聚合化合物、或光聚合起始劑。
具有至少兩個不飽和鍵之加成聚合化合物可為丙烯酸或甲基丙烯酸之多元醇系酯、寡聚酯(oligo ester)、環氧系、尿烷系化合物或其類似物。
具有環氧基之光聚合化合物(如烷氧基矽烷)係添加至熱固性膠黏組成物中，再經混合、塗佈及熱固步驟，之後其係於未固化態使用。以100重量份之熱固性膠黏樹脂為基準，該光聚合化合物之含量較佳為3至500重量份。
光聚合起始劑係用於固化該光聚合化合物，其具體舉例可為羧基化合物、有機硫化合物、過氧化物、胺或鎓鹽系化合物。以100重量份之光聚合化合物為基準，光聚合起始劑之含量較佳為0.1至20重量份。
此外，輻射線固化膠黏劑可包括：丙烯酸系聚合物，其分子中之支鏈上具有自由基反應性不飽和基或環氧基；或環氧官能基交聯劑，其分子中具有一個以上環氧基，例如可再加入乙二醇二縮水甘油醚，以增加交聯效率。
本發明切割黏晶膜之切割部較佳更包括一基材膜於該膠黏層上。
使用於本發明之基材膜舉例可為由聚丙烯、聚乙烯、聚酯、聚碳酸酯、乙烯-醋酸乙烯共聚物、乙烯-丙烯共聚物、乙烯-丙烯酸乙酯共聚物、聚氯乙烯、或兩者以上混合物所組成之一膜層，且其可包括另一聚合膜、金屬箔及其類似物。該基材膜具有10至200μm之適當厚度，較佳為50至180μm，更佳為80至150μm。若該基材膜之厚度小於10μm，則切割過程中難以穩定控制切割深度。若厚度超過200μm，則過厚之基材膜會使切割過程中之毛邊現象增加，且其低延伸性將導致延展步驟難以精確地進行。
於本發明中，藉由形成膠黏層於基材膜上而製得切割膠帶之方法並無特殊限制，其可包括：使用刮條塗佈機，直接塗佈膠黏劑於基材膜表面，再進行乾燥；以及塗佈膠黏劑於可離型基板表面，進行乾燥，再將形成於可離型基板表面之膠黏劑轉移至基材膜表面，接著進行陳化步驟。膠黏層較佳係具有1至100μm之厚度，更佳為5至30μm。若膠黏層厚度小於上述厚度範圍，則難以製得均勻的膠黏層，因而導致膠黏層之非均一性。
製備本發明切割黏晶膜之方法可包括：使用熱軋及壓機，層壓切割膠帶及黏晶部，其中，就連續製程及效率而言，熱軋層壓方法為較佳。該熱軋層壓方法較佳係於10至100℃及0.1至10kgf/cm2 之壓力下進行。
本發明亦關於一種半導體晶圓，其中，本發明切割黏晶膜之黏著層係貼附於晶圓之一側，而切割黏晶膜之膠黏層係固定於晶圓環架。
上述之半導體晶圓可藉由下述步驟製備：於0至180℃下，將切割黏晶膜之黏著層貼附至晶圓背面，再將切割黏晶膜之膠黏層固定於晶圓環架。
此外，本發明亦關於一種半導體裝置，其包括一線路基板；本發明切割黏晶膜之黏著層，其係貼附至黏固於線路基板表面之晶片；以及一半導體晶片，其係黏固於該黏著層上。
製備半導體裝置之步驟將於後敘述。
與上述切割黏晶膜貼附之半導體晶圓係利用切割裝置，將其完全切割成各別晶片。
之後，若該切割膠帶為輻射線固化膠黏劑，則由基板側曝照該膠黏層，使其固化。然而，若該切割膠帶為熱固性膠黏劑，則該膠黏劑係藉由加熱而固化。經由輻射或加熱而固化之膠黏層對於該黏著層具有較弱之黏著力，據此，晶片可經由下述步驟而輕易取出。在此，若需要的話，該切割黏晶膜可進行延展步驟。若進行延展步驟，則可定義出晶片間之間隙，如此更易取出晶片。此外，黏著層及膠黏層係相互交錯，據此，取出步驟(pick-up process)將更具效率。
緊接的是取出步驟(pick-up process)。在此，半導體晶圓與切割黏晶膜之黏著層自切割黏晶膜之膠黏層分離，因而取得僅貼附有黏著層之晶片。將貼附有黏著層之晶片貼附至半導體基板上。晶片之貼附步驟通常係於100至180℃且壓力為0.5至2kgf/cm2 下進行0.5至3秒。
完成上述步驟後，再經由打線及封膠步驟，則可製得半導體裝置。
半導體裝置之製備方法並不侷限於上述方法，其可包括任何選擇性步驟或改變步驟順序。舉例而言，該方法可依序進行固化膠黏層、切割及延展步驟，或者依序進行切割、延展及固化膠黏層步驟。於貼附晶片後，更可包括加熱或冷卻步驟。
實施例
本發明將藉由實施例作更加詳細之描述，以具體描述本發明。然而，本發明之實施例可加以變化，且本發明之範疇並不侷限於下述實施例。
實施例1
攪拌一組成物，其包括20重量份之芳香性環氧樹脂(軟化點為80℃之酚醛類環氧樹脂)、作為環氧樹脂固化劑之10重量份酚樹脂(軟化點為90℃之酚系酚醛樹脂)、70重量份之含環氧基丙烯酸共聚物(SA-55，產自LG化學公司，Tg=5℃，平均分子量為500,000)、0.3重量份之固化增進劑(2-苯基-4一甲基咪唑,2P4MZ)、以及作為填料之10重量份矽(平均直徑為75nm之熔融矽)，並將該組成物混合於丁酮中，以製得清漆。
將黏著樹脂組成物塗佈於具有38μm厚度之離型膜(SKC,RS-21G)上，再進行乾燥，製得膜厚度為20μm之黏著膜(常用於封裝領域中)。藉由層壓機(laminator,購自Fujisok公司)，層壓該黏著膜與切割膠帶(相對於SUS304，其180℃下之膠黏力為160gf/inch)，以獲得用於半導體之切割黏晶膜。
實施例2
除了使用70重量份之含環氧基丙烯酸共聚(SA-05，產自LG化學公司，Tg=0℃，平均分子量為500,000)及作為填料之20重量份矽(平均直徑為75nm之熔融矽)外，其餘製備樹脂之步驟皆與實施例1所述相同，而後便可製得黏著膜。
實施例3
除了使用70重量份之含環氧基丙烯酸共聚(SA-34，產自LG化學公司，Tg=20℃，平均分子量為300,000)及作為填料之5重量份矽(平均直徑為75nm之熔融矽)外，其餘製備樹脂之步驟皆與實施例1所述相同，而後便可製得黏著膜。
實施例4
除了使用33重量份之芳香性環氧樹脂(軟化點為80℃之酚醛類環氧樹脂)、作為環氧樹脂固化劑之17重量份酚樹脂(軟化點為90℃之酚系酚醛樹脂)、50重量份之含環氧基丙烯酸共聚(SA-55，產自LG化學公司，Tg=5℃，平均分子量為500,000)及作為填料之5重量份矽(平均直徑為75nm之熔融矽)外，其餘製備樹脂之步驟皆與實施例1所述相同，而後便可製得黏著膜。
比較例1
攪拌包括20重量份之芳香性環氧樹脂(軟化點為80℃之酚醛類環氧樹脂)、10重量份作為環氧樹脂固化劑之酚樹脂(軟化點為90℃之酚系酚醛樹脂)、70重量份之含環氧基丙烯酸共聚物(SA-34，產自LG化學公司，Tg=20℃，平均分子量為300,000)、0.3重量份之固化增進劑(2-苯基-4-甲基咪唑,2P4MZ)、以及20重量份作為填料之矽(平均直徑為75nm之熔融矽)之組成物，並將該組成物混合於丁酮中，以製得清漆。藉由實施例1所述之方法，使用該清漆製得切割黏晶膜。
比較例2
除了未添加填料外，其餘製備切割黏晶膜之方法皆與實施例1所述相同。
比較例3
藉由層壓機(laminator,購自Fujisok公司)，層壓實施例1所製得之黏著膜與切割膠帶(相對於SUS 304，其180℃下之膠黏力為400gf/inch)，以獲得用於半導體之切割黏晶膜。
比較例4
藉由層壓機(laminator,購自Fujisok公司)，層壓實施例1所製得之黏著膜與切割膠帶(相對於SUS 304，其180℃下之膠黏力為50gf/inch)，以獲得用於半導體之切割黏晶膜。〈性質評估 〉
測量實施例1至4及比較例1至4之切割黏晶膜之下列性質，其評估結果如下表1所示。
1.晶圓背面黏著性評估
使用貼帶機(tape mounter，購自DS精密工業)，將所製得之A-階態(A-stage state)黏著膜層壓至溫度維持於50℃之8-英吋矽晶圓，其層壓時間為10秒。以層壓後之孔洞存在與否，來評估背面黏著特性。
2.正常溫度下之儲存彈性
由一特定方向，將該黏著膜切割成15(W)mm X 45(L)mm尺寸備用。藉由一夾具，利用紋路分析(Texture Analysis，TA)以固定樣本兩端，據此，樣本之測量部長度為25mm，且於12.8mm/min之延展條件下，測得其儲存彈性。
3.晶圓與黏晶黏著層間之界面黏著力
將切割黏晶膜切割成25(W)mm X 150(L)mm尺寸備用。使用50℃熱軋層壓機來層壓所製得之膜，以使該黏著膜與一晶圓接觸。使用紋路分析，於300mm/min條件下，測量180°剝離力。
4.黏晶黏著層與切割膠帶膠黏層間之界面膠黏力
將切割黏晶膜切割成25(W)mm X 150(L)mm尺寸備用。將膜之黏晶部之黏著層固定於玻璃板，並使用紋路分析，拉曳該切割膜，且於300mm/min條件下，測量180°剝離力。
5.觀察晶片分散及毛邊產生
於50℃下，利用貼片機(mounter)，將切割黏晶膜層壓至100μm之晶圓及晶圓環。使用產自NeonTech Co.之切割裝置，於4000rpm及移動速度為20mm/sec之條件下，將晶圓切割成尺寸為2mm x 2mm之晶片；接著，觀察晶片是否分散，及觀察產生毛邊之單離晶片數百分比。
6.取出成功率
於切割步驟後，將貼附有黏著層之單離晶片由切割膠帶取出，若取出時無產生瑕疵，則評估為“佳”，若取出時有產生瑕疵，則評估為“劣”。
7.封裝可靠度
藉由黏著層，將晶片黏附於印刷電路板(PCB)，再實施五次熱循環試驗(其中，一次循環係定義為：將晶片單置於-55℃之溫度下達15分鐘，再將其單置於125℃之溫度下達15分鐘)。接著，將晶片單置於恆溫恆濕室中(85℃/85%)達72小時，之後，將樣本通過紅外線回焊(IR reflow)，其溫度設定為：使樣本表面之最高溫度維持於260℃達20秒。爾後，將樣本單置於室溫下冷卻。此過程實施三次，且使用超聲波顯微鏡，觀察樣本中之裂痕產生。若無產生如分裂或裂痕之損壞，則評估為“佳”，若有一個以上部位產生損壞，則評估為“劣”。
由表1可發現，相較於比較例1至4之切割黏晶膜，本發明實施例1至4所製得之切割黏晶膜之背面黏著性、晶片分散、毛邊產生、取出及封裝可靠度皆展現優異結果。也就是說，由此可知，切離過程中之毛邊產生可降至2%以下，因此，若晶圓與黏晶部之黏著層間之黏著力X比上黏晶部與切割部之膠黏層間之膠黏力Y(即X/Y比例)為0.25至1，且黏晶部黏著層之正常溫度儲存彈性為100MPa至1000MPa，則可改善半導體封裝之連接可靠度，且可將毛邊導致之劣化率降至最低。
再者，若X/Y比例低且正常溫度儲存彈性高(如比較例1)，尤其是X值小時，則於晶片切割成極小尺寸之過程中，晶片與黏晶部之界面會發生晶片分散之現象，且毛邊程度會超過標準值。此外，若正常溫度儲存彈性低且未使用無機填料時(如比較例2)，則打線過程中未發現會覆蓋線路之延長毛邊，但取出時有產生瑕疵。高溫下觀察封裝可靠度，發現其有發生劣化，如晶片邊緣捲縮。若X值大但Y值也大而導致X/Y比例低時(如比較例3)，則會觀察到毛邊程度超過標準值之現象，同時取出時亦有產生瑕疵。若X/Y比例高時(如比較例4)，則於切離過程中，會發生黏著層與切割膠帶間界面之晶片分散問題，且毛邊程度超過標準值。
1．．．半導體晶片
10．．．黏晶部之保護膜
20．．．黏晶部之黏著層
30．．．切割部之膠黏層
40．．．切割部之基材膜
50．．．線路基板
圖1係本發明一實施例之黏晶膜剖視圖。
圖2係本發明一實施例之切割黏晶膜剖視圖。
圖3係本發明一實施例之半導體裝置剖視圖。
10．．．黏晶部之保護膜
20．．．黏晶部之黏著層
30．．．切割部之膠黏層
40．．．切割部之基材膜

Claims (28)

  1. 一種切割黏晶膜，包括：一黏晶部，其具有一貼附至一晶圓之黏著層；以及一切割部，其具有一膠黏層，其中，該晶圓與該黏晶部之該黏著層間黏著力X，比上該黏晶部與該切割部之該膠黏層間之膠黏力Y之X/Y比例為0.15至1，且於正常溫度下，該黏晶部之該黏著層具有100至1000MPa之儲存模數(storage modulus)，其中，該晶圓與該黏晶部之該黏著層間之該黏著力X為20至100gf。
  2. 如申請專利範圍第1項所述之切割黏晶膜，其中，該黏晶部之該黏著層包括a)熱固性多官能環氧樹脂；以及b)低彈性高分子樹脂。
  3. 如申請專利範圍第2項所述之切割黏晶膜，其中，該a)熱固性多官能環氧樹脂於一主鏈中至少包含兩個環氧基，且具有50℃或以上之玻璃轉移溫度。
  4. 如申請專利範圍第2項所述之切割黏晶膜，其中，該a)熱固性多官能環氧樹脂具有180至1000之平均環氧當量。
  5. 如申請專利範圍第2項所述之切割黏晶膜，其中，該a)熱固性多官能環氧樹脂係選自由甲酚醛環氧樹脂(cresol novolac epoxy resin)、雙酚A型酚醛環氧樹脂(bisphenol A-type novolac epoxy resin)、酚系酚醛環氧樹脂(phenol novolac epoxy resin)、4-官能基環氧樹脂 (4-functional epoxy resin)、聯苯型環氧樹脂(biphenyl-type epoxy resin)、三-酚甲烷型環氧樹脂(tri-phenol methane-type epoxy resin)、烷基改性三-酚甲烷環氧樹脂(alkyl-modified tri-phenol methane epoxy resin)、萘型環氧樹脂(naphthalene-type epoxy resin)、雙環戊二烯型環氧樹脂(dicyclopentadiene-type epoxy resin)及雙環戊二烯改性酚型環氧樹脂(dicyclopentadiene-modified phenol-type epoxy resin)所組成群組之至少一者。
  6. 如申請專利範圍第2項所述之切割黏晶膜，其中，該a)熱固性多官能環氧樹脂具有50至100℃之軟化點。
  7. 如申請專利範圍第2項所述之切割黏晶膜，其中，該b)低彈性高分子樹脂具有50℃或以下之玻璃轉移溫度。
  8. 如申請專利範圍第2項所述之切割黏晶膜，其中，該b)低彈性高分子樹脂具有100,000至2,500,000之平均分子量。
  9. 如申請專利範圍第2項所述之切割黏晶膜，其中，該b)低彈性高分子樹脂係選自由含羧基丁腈橡膠、具有高分子量之脂肪族環氧、橡膠改性環氧、含縮水甘油基、羧基、羥基或胺基之丙烯酸共聚物、及馬來酸改性苯乙烯-乙烯-丁二烯-苯乙烯共聚物所組成群組之至少一者。
  10. 如申請專利範圍第2項所述之切割黏晶膜，其中，該黏晶部之該黏著層更包括一固化劑。
  11. 如申請專利範圍第10項所述之切割黏晶膜，其中，該固化劑為多官能酚樹脂。
  12. 如申請專利範圍第11項所述之切割黏晶膜，其中，該多官能酚樹脂具有100至1000之羥基當量。
  13. 如申請專利範圍第11項所述之切割黏晶膜，其中，該多官能酚樹脂係選自由雙酚A樹脂、酚系酚醛樹脂、甲酚醛樹脂、雙酚A酚醛樹脂、芳烷基酚樹脂、多官能酚醛樹脂、雙環戊二烯酚醛樹脂、胺三嗪酚醛樹脂(amino triazine phenol novolac resin)、聚丁二烯酚醛樹脂(polybutadiene phenol novolac resin)及雙苯基型樹脂所組成群組之至少一者。
  14. 如申請專利範圍第10項所述之切割黏晶膜，其中，該固化劑具有50至150℃之軟化點。
  15. 如申請專利範圍第10項所述之切割黏晶膜，其中，該固化劑之當量為該a)熱固性多官能環氧樹脂之當量的0.4至2倍。
  16. 如申請專利範圍第2項所述之切割黏晶膜，其中，該黏晶部之該黏著層更包括一固化增進劑。
  17. 如申請專利範圍第16項所述之切割黏晶膜，其中，該固化增進劑係選自由2-甲基咪唑(2MZ)、2-乙基-4-甲基咪唑(2E4MZ)、2-苯基咪唑(2PZ)、1-氰乙基-2-苯基咪唑(2PZ-CN)、2-十一烷基咪唑(C11Z)、2-十七烷基咪唑(C17Z)、及1-氰乙基-2-苯基咪唑三甲基酯(2PZ-CNS)所組群組之至少一者。
  18. 如申請專利範圍第16項所述之切割黏晶膜，其中，以該a)熱固性多官能環氧樹脂及該b)低彈性高分子樹脂之 總量為100重量份計，該固化增進劑之含量為0.1至10重量份。
  19. 如申請專利範圍第2項所述之切割黏晶膜，其中，該黏晶部之該黏著層更包括一無機填料。
  20. 如申請專利範圍第1項所述之切割黏晶膜，其中，該黏晶部更包括一保護膜。
  21. 如申請專利範圍第1項所述之切割黏晶膜，其中，該切割部之該膠黏層包括一丙烯酸系共聚物。
  22. 如申請專利範圍第21項所述之切割黏晶膜，其中，該丙烯酸系共聚物係藉由使具有C1-12 烷基之(甲基)丙烯酸酯系單體與含交聯官能基之單體進行共聚合而製得。
  23. 如申請專利範圍第22項所述之切割黏晶膜，其中，該具有C1-12 烷基之(甲基)丙烯酸酯系單體係選自由甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、正丙基(甲基)丙烯酸酯、異丙基(甲基)丙烯酸酯、丁基(甲基)丙烯酸酯、第三丁基(甲基)丙烯酸酯、戊基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、正辛基(甲基)丙烯酸酯、及正十四烷基(甲基)丙烯酸酯所組群組之至少一者。
  24. 如申請專利範圍第22項所述之切割黏晶膜，其中，該含交聯官能基之單體係選自由2-羥基乙基(甲基)丙烯酸酯、2-羥基丙基(甲基)丙烯酸酯、4-羥基丁基(甲基)丙烯酸酯、6-羥基己基(甲基)丙烯酸酯、2-羥基乙二醇(甲基)丙烯酸酯、2-羥基丙二醇(甲基)丙烯酸酯、(甲基)丙烯酸、馬來 酸、反丁烯二酸、丙烯醯胺、N-乙烯基吡咯啉酮及N-乙烯基-己內醯胺所組群組之至少一者。
  25. 如申請專利範圍第21項所述之切割黏晶膜，其中，該切割部之該膠黏層包括一多官能交聯劑。
  26. 如申請專利範圍第1項所述之切割黏晶膜，其中，該切割部包括一基材膜。
  27. 一種半導體晶圓，其中如申請專利範圍第1項至第26項中任一項所述之該切割黏晶膜之該黏著層係貼附於該晶圓之一側，且該切割黏晶膜之該膠黏層係固定於一晶圓環架。
  28. 一種半導體裝置，包括：一線路基板；如申請專利範圍第1項至第26項中任一項所述之該切割黏晶膜之一黏著層，其係貼附至黏固於該線路基板表面之一晶片；以及一半導體晶片，其係黏固於該黏著層上。
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