TWI440106B - 倒裝晶片互連結構 - Google Patents

倒裝晶片互連結構 Download PDF

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Publication number
TWI440106B
TWI440106B TW097141705A TW97141705A TWI440106B TW I440106 B TWI440106 B TW I440106B TW 097141705 A TW097141705 A TW 097141705A TW 97141705 A TW97141705 A TW 97141705A TW I440106 B TWI440106 B TW I440106B
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Taiwan
Prior art keywords
layer
reflow
reflowable
flip chip
temperature
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TW097141705A
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English (en)
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TW200924093A (en
Inventor
Hunt Hang Jiang
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Monolithic Power Systems Inc
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Publication of TW200924093A publication Critical patent/TW200924093A/zh
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Publication of TWI440106B publication Critical patent/TWI440106B/zh

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Description

倒裝晶片互連結構
本發明公開了一種倒裝晶片焊接結構，尤其是一種用於連接或貼裝半導體工作件，例如裝置、芯片、晶圓、晶片(下面統稱為“半導體晶片”)的倒裝晶片互連結構，支持(例如封裝或互連)基板，例如卡片、電路板、載體、引線架等等。
與引引線焊接接採用的將面朝上的半導體晶片藉由導線電連接至半導體晶片的每個焊墊的方法不同，倒裝晶片焊接採用將面朝下的半導體晶片藉由導電性的互連(例如焊接凸塊或銅柱)電連接至半導體晶片的每個焊墊。除了半導體晶片外，倒裝晶片焊接也能夠用於其他的組件，例如被動式濾波器、檢測器陣列和MEMS設備。
半導體晶片操作過程中的溫度起伏和半導體晶片及其支持基板之間不同的熱量膨脹係數會導致產生倒裝晶片互連的熱感應機械應力(例如切線應力)。例如，當半導體晶片和其支持基板置於高溫時，兩者會以不同的速率產生不同尺寸的膨脹，從而導致產生倒裝晶片互連的機械應力。
為了減少機械應力，半導體晶片及其支持基板通常由熱膨脹係數十分匹配的材料製成，從而當高溫時兩者可以膨脹至實質上相同的尺寸。不過，每次半導體晶片電力開啟或者開啟時也會產生熱感應機械應力。當晶片被電力開啟或開啟時，晶片及其支持基板之間會產生較大的暫時溫度差，直至支持基板溫度接近半導體工作件的溫度。
由於高效能半導體晶片的高溫和高頻的功率迴圈週期(例如開啟和關閉)，即使半導體晶片及其支持基板具有十分匹配的熱膨脹係數，倒裝晶片互連構件仍會有機械和電路的不穩定。當半導體晶片被設計成能在更小的體積內耗散更多的功率，這些不穩定將成為倒裝晶片組裝件的更大問題，從而導致更大的熱感應機械應力。
本發明的目的是解決現有採用長銅柱的倒裝晶片互連結構及其形成方法可能會造成半導體晶片與熱感應機械應力相關的可靠性的問題，該熱感應機械應力在互連結構的基層產生或沿著互連結構主體產生的。因此，本發明提供了一種倒裝晶片互連結構，該互連結構具有應力消除裝置，以及製造該互連結構來消除機械應力的技術，從而提高倒裝晶片組裝的可靠性。
本發明公開的倒裝晶片互連結構可以是各種類型的形狀。例如，倒裝晶片互連構件可以是柱狀(例如圓形或矩形)，柱狀(post)或支柱(pillar)，或者其他任何形狀。此外，本發明公開的倒裝晶片互連結構可以包括與半導體晶片上的焊墊(例如藉由鈦種子層或鎢化鈦(TiW)種子層或鉻種子層)接觸的非回焊的基層(例如銅或鎳金屬層，也稱之為第一非回焊金屬層)、非回焊主體層(例如銅或鎳金屬層，也稱之為第二非回焊金屬層)、位於非回焊基層和非回焊主體層(例如銅或鎳金屬層)之間的可回焊應力消除層(例如鉛/錫或者錫焊層)，以及與互連點或支持基板的互連接觸的可回焊熔接層(例如鉛/錫或錫焊層)。
本發明還公開了一種製造倒裝晶片互連結構的方法，該方法包括提供具有一或多個焊墊的半導體工作件。同時該方法也包括沉積第一非回焊層的步驟，該第一非回焊層具有高於第一預定回焊溫度的第一熔化溫度。該方法還包括沉積可回焊應力消除層的步驟，該可回焊應力消除層在第一預定回焊溫度下能被回焊。該方法還包括沉積第二非回焊層的步驟，該第二非回焊層具有高於第一預定回焊溫度的第二熔化溫度，從而使得沉積的可回焊應力消除層位於第一和第二非回焊層之間。
本發明還公開一種倒裝晶片組裝件，該倒裝晶片組裝件包括半導體工作件和連接至半導體工作件的複數個互連構件。每個互連構件包括與半導體工作件接觸的第一非回焊金屬層，還包括第二非回焊金屬層，和至少一層可回焊應力消除層，該可回焊應力消除層在第一預定回焊溫度下能被回焊。可回焊應力消除層位於第一和第二非回焊金屬層之間。
本發明還公開一種倒裝晶片組裝件，該倒裝晶片組裝件包括半導體工作件和連接至半導體工作件的複數個互連構件。每個互連構件包括與半導體工作件接觸的第一非回焊金屬層，還包括第二非回焊金屬層。每個互連構件還包括用於消除互連構件應力的裝置。
本發明的上述各個方面可選擇地包括一個或多個下列的特定具體實施方式。例如，製造倒裝晶片互連結構的方法包括沉積可回焊熔接層，該熔接層在第二預定回焊溫度下能被回焊。該方法還包括在一或複數個焊墊上圖案化具有開口的介電層，並在每個焊墊上沉積種子層。另外，每個互連結構包括可回焊熔接層，該熔接層在第二預定回焊溫度下能被回焊。
第一預定回焊溫度可以比可回焊應力消除層的熔化溫度高10～30度。第一預定回焊溫度可以與第二預定回焊溫度相同。例如，應力消除層和熔接層可以包括相同的焊接材料。第一預定回焊溫度可以高於第二預定回焊溫度，因此可回焊應力消除層不會在第二預定回焊溫度下回焊。
可回焊應力消除層可以比可回焊熔接層厚。第一非回焊層可以位於種子層上。第一熔化溫度可以與第二熔化溫度相同；例如，第一金屬層和第二金屬層可以包括相同的金屬。第二非回焊金屬層可以比第一非回焊金屬層厚。第一和第二非回焊金屬層每層可以包括銅、鎳或錫金屬。可回焊應力消除層也可以包括錫、銦、錫-鉛合金，錫-鉍合金、錫-銅合金、錫-銀合金或錫-銀-銅合金。
發明的各個方面可以被實施以實現一或多重潛在優勢。將應力消除裝置，例如一或多層可回焊應力消除層，作為倒裝晶片互連構件的一部分，因為應力消除裝置可以作為產生應力的避震器，在基層或沿著互連結構的主體層產生的機械應力可以被降低。與傳統的互連結構相比，本發明公開的倒裝晶片互連結構和技術具有相似或更好的生產能力，實現大規模低成本的生產。
此外，與採用長銅柱倒裝晶片結構相比，本發明公開的倒裝晶片互連構件和技術藉由併入一或多層應力消除層(例如可回焊焊料)，提供更為可靠和牢固的互連。例如，熱感應機械應力的效應可以藉由具有大縱橫比的互連結構和應力消除裝置而減少。另外，與焊接凸塊倒裝晶片結構相比時，本發明公開的倒裝晶片互連結構和技術可以具有坍塌可控制焊凸塊，無需使用焊料壩防止焊料超出，由於使用導熱良好的(例如銅)主體層而具有更好的熱傳導能力，不需要在倒裝晶片組裝之前在凸塊級別上進行焊料回焊。
本發明公開的實施例涉及一種將半導體晶片電連接至支持基板的倒裝晶片互連結構，以及建構該倒裝晶片互連結構的方法。互連結構在倒裝晶片組裝中有如下一些功能，從電路上來說，互連結構可以提供從晶片到支持基板的傳導路徑；互連結構也可以提供熱傳導路徑，將晶片的熱量傳遞到支持基板；另外，互連結構也能夠將晶片部分或全部機械貼裝到支持基板；此外，互連結構也可以作為一間隔物，用來防止晶片和支持基板上導體之間的電路接觸，同時作為消除芯片和基板之間機械應力的短引線。
第1A圖為具有應力消除裝置的倒裝晶片互連結構100的剖面圖。如上所述，倒裝晶片互連結構100用於將半導體晶片102連接至支持基板(未圖示)。該半導體晶片102具有一個或多個焊墊104，該焊墊藉由倒裝晶片互連結構100將半導體晶片102電連接至其他的裝置。半導體晶片102同時具有一保護性的應力消除層106(例如介電薄膜)作為保護半導體晶片102表面的鈍化層，吸收來自倒裝晶片互連結構100的應力。一種子層108(例如凸塊下金屬化層)可以用於例如改進倒裝晶片互連結構100和焊墊104之間的粘著力。另外，種子層108可以作為擴散阻隔層，以防止倒裝晶片互連結構100和焊墊104之間的金屬間擴散。在其他實施方式中，種子層108可以是倒裝晶片互連結構100的一部分。
倒裝晶片互連結構100可以為支柱狀(例如圓形或矩形)，包括一連串在一預定高溫下的可回焊層和非回焊層。例如，假設非回焊層由銅和/或鎳材料構成，可回焊層由共晶鉛/錫焊料構成。在一預定的約為210℃的高回焊溫度下，共晶鉛/錫焊料開始熔化，回焊為一不同的形狀(例如球形)，而非回焊層不會熔化，保持固態。通常，可以根據預定的高溫區分該層為可回焊層或非回焊層。因此，在一個實施例中，由某種特定材料構成的一層可以被劃分為非回焊層；然而在另外一個實施例中，由於預定高溫升高了，同樣的該材料構成的層可以被劃分為可回焊層。
舉例而言，假設一第一倒裝晶片互連結構包括一由錫構成的層，其熔化溫度約為231℃，以及由銦構成的層，其熔化溫度約為156℃。由於回焊溫度通常可以比熔化溫度高10～30度，在預定的170℃左右高溫下，由銦構成的層會開始回焊並改變其形狀，而由錫構成的層則不會回焊。因此，在該第一倒裝晶片互連結構中，由錫構成的層可以被認為是非回焊層，而由銦構成的層可以被認為是回焊層。
另一方面，假設一第二倒裝晶片互連結構包括一由錫構成的層，和一由銅構成的層，其熔化溫度實質上高於錫。在一預定的約為245℃的回焊溫度下(該溫度比熔化溫度高10～30度)，由錫構成的層將開始回焊並改變其形狀，而由銅構成的層則不會回焊。因此在該第二倒裝晶片互連結構中，由銅構成的層可以被認為是非回焊層，而由錫構成的層(在第一倒裝晶片互連結構中層曾被認為是非回焊層)可以被認為是可回焊層。
如第1A圖所示，倒裝晶片互連結構100包括非回焊基層110(也稱之為第一非回焊金屬層)，該基層藉由種子層108與半導體晶片102的焊墊104接觸。非回焊基層110包括，例如一或多層由銅、鎳、錫和任何合適的上述金屬的合金(例如錫-鉍、錫-銅或錫-銀)構成的金屬層。在一些實施例中，非回焊基層110由銅製成。在一個實施例中，非回焊基層110是一未被延長的銅層，該銅層的尺寸可以為，例如厚度少於25微米，寬度或直徑為50～250微米。此外，如上所述，倒裝晶片互連結構100的形狀可以是圓形、八邊形、矩形或任何其他形狀。
倒裝晶片互連結構100還包括設置於非回焊基層110上的可回焊應力消除層112。該回焊應力消除層112可以包括，例如由錫、銦、錫-鉛合金、錫-鉍合金、錫-銅合金、錫-銀合金和其他任何上述材料合成的合適的三元合金(例如錫-銀-銅合金)構成的焊接材料。在一些實施例中，可回焊應力消除層112為一錫焊層。如上所述，可回焊應力消除層112的熔化溫度比焊料的預定回焊溫度低10～30度。在一些實施例中，可回焊應力消除層112上沉積的焊料量厚度為25～50微米。
倒裝晶片互連結構100同時還包括非回焊主體層114(也稱之為第二非回焊金屬層)，該主體層可以作為倒裝晶片互連結構100的主要部分或者延長部分。非回焊主體層114被設置於可回焊應力消除層112上。非回焊主體層114包括，例如一或多層由銅、鎳、錫和任何上述金屬合成的合適的合金(例如錫-鉍、錫-銅或錫-銀)構成的金屬層。在一些實施例中，主體層114由銅製成。在一個實施例中，主體層114和基層110可以由相同的金屬材料製成，例如：非回焊層110和114兩者都可以是銅金屬層。
在另外一個實施例中，主體層114的材料可以跟基層110不同。例如：主體層114可以是銅金屬層，而基層110可以是鎳金屬層。例如，延長的非回焊主體層114的厚度或高度可以在50～100微米之間，寬度或直徑在50～250微米之間。此外，如上所述，倒裝晶片互連結構100的支柱形狀可以是圓形、八邊形、矩形或任何其他的形狀。
倒裝晶片互連結構100還包括設置於非回焊主體層114上的可回焊熔接層116。該可回焊熔接層可用於回焊後熔接支持基板(未圖示)。該可回焊熔接層116包括，例如由錫、銦、錫-鉛合金、錫-鉍合金、錫-銅合金、錫-銀合金和其他任何上述材料合成的合適的三元合金(例如錫-銀-銅合金)構成的焊接材料。在一些實施例中，可回焊熔接層116為一錫焊料層。此外，可回焊熔接層116和可回焊應力消除層112兩者可以由相同的焊接材料構成，且在相同的預定回焊溫度下回焊。在一些實施例中，可回焊熔接層116沉積的焊料量厚度為15～35微米。
如第1B圖所示，在倒裝晶片組裝之前的一個任選的回焊流程之後，由於焊料在回焊溫度回焊的緣故，倒裝晶片互連構件100的形狀可能會有輕微的不同。例如，根據焊接材料量，可回焊熔接層116可以在回焊後變成半球狀或球狀。另外，可回焊應力消除層112可以在回焊後變成薄餅狀。如上所述，倒裝晶片互連結構100的潛在優勢之一是晶圓級的回焊是任選的流程，在構成倒裝晶片組裝件之前並不需要。
在一些實施例中，可回焊應力消除層112可以被設計成具有比可回焊熔接層116更高的回焊溫度。在這種情況下，倒裝晶片互連結構100可以(在更高的回焊溫度)在晶圓級別上回焊以首先產生可回焊應力消除層112的可控制坍塌。另外，儘管可回焊熔接層116也在更高的溫度時回焊，由於用於可回焊熔接層116的焊料量可以較少，該層回焊得並不嚴重。因此，倒裝晶片組裝的可回焊熔接層116可以在一第二預定回焊溫度(低於第一預定回焊溫度，不會在應力消除層112回焊)下回焊，使得半導體晶片102結合於其支持基板。
第1C圖為回焊前包括半導體晶片102、倒裝晶片互連結構100和支持基板的金屬互連件120的倒裝晶片組裝件150剖面圖。一旦倒裝晶片互連結構100製作完成，在形成倒裝晶片組裝件之前半導體晶片102可以被倒向浸入焊接助熔劑。焊接助熔劑可用於去除電路基板的金屬互連件120上的氧化物，並改善焊料焊接。在一個實施例中，倒裝晶片互連結構100僅有熔接層116浸沒在焊接助熔劑中。倒裝晶片互連結構100製造的詳細內容將在下面介紹第2圖的部分討論。
第1D圖為回焊後倒裝晶片組裝件150的剖面圖。如上面討論過的，倒裝晶片組裝件150的回焊溫度可以是一預定的高溫，該高溫是根據可回焊應力消除層112和可回焊熔接層116的成分決定的。例如，假設可回焊應力消除層112和可回焊熔接層116都是由錫焊料製成。由於錫焊料的緣故，倒裝晶片組裝件150的回焊溫度約為245℃。如第1D圖所示，對回焊後的倒裝晶片組裝件150而言，互連結構100的可回焊熔接層116已經和金屬互連件120熔合。
此外，可回焊應力消除層112是位於基層110和延長的主體層114之間的夾層。在一個實施例中，互連結構100可以具有多於一層的可回焊應力消除層112。例如，另外的非回焊主體層114可以被插入一層或多層的可回焊應力消除層112之間。在這種情況下，可回焊應力消除層112可以被一夾層結構替換，該夾層結構包括一連串可回焊應力消除層112+非回焊主體層114+可回焊應力消除層112+非回焊主體層114+可回焊應力消除層112…，如此反復排列。在一些實施例中，互連結構100的每一層(例如可回焊層或非回焊層)都可包括一或多層。例如可回焊應力消除層112可以包括由第一種材料(例如錫)構成的第一層、由第二種材料(例如銦)構成的第二層、由第三種材料(例如鉍)或甚至是第一種材料構成的第三層等多層結構。
倒裝晶片互連結構100可以被設計成能承受在半導體晶片102操作過程中，由於溫度起伏和半導體晶片102及其支持電路基板之間由於熱膨脹係數的差異產生的機械切線應力。例如，當半導體晶片102及其支持基板都處於高溫時，它們會以不同的速率產生不同尺寸的膨脹，從而導致產生倒裝晶片互連結構100的機械應力。
藉由加入一或多層可回焊應力消除層112，倒裝晶片互連結構100具有避震功能，能夠適應熱感應機械應力。這是由於應力消除層112能夠減少互連結構100的硬度，為了吸收施加的機械應力而具有的可撓性構件的功能。另外，可以增加互連結構100的縱橫比(例如高度除以直徑的比例)，從而進一步增強應力消除層112的避震功能。並且，如上面所討論的，由於不需要焊料壩防止焊料超出，倒裝晶片互連結構100可以具有回焊後的可控制坍塌，並幫助焊料定型。
另外，可以藉由設計可回焊應力消除層112使得應力消除層112的回焊焊料實質上不會回焊進入鄰接的非回焊主體層114和非回焊基層110。例如，在非回焊基層110和非回焊主體層114的側壁可能有氧化物形成(例如由於氧化作用產生的氧化銅)。而且，應力消除層112的回焊的焊料和鄰接的非回焊層之間的接觸角大約為180°，實質上是沒有用於回焊焊料的潤濕角。除此之外，與可回焊熔接層116不同，應力消除層112的回焊焊料在回焊時不需要焊接助熔劑。基於上述原因，可以防止應力消除層112的回焊焊料超出進入鄰接的非回焊層(110和114)。
第2圖為本發明實施例之一的製造具有應力消除裝置的倒裝晶片互連結構的示範性流程200流程圖。通常，顯示的流程包括在半導體晶片的焊墊的頂部沉積一系列的可回焊層和非回焊層。如上所述，倒裝晶片互連結構可以包括與半導體晶片上的焊墊接觸的非回焊基層、被延長的非回焊主體層、位於非回焊基層和非回焊主體層中間的可回焊應力消除層、以及與支持基板上的金屬互連件接觸的可回焊熔接層。
在該實施例中，流程200在步驟205中，製作一具有焊墊的半導體晶片，該焊墊可以是例如鋁、金、銅焊墊。與引線焊接不同，倒裝晶片組裝採用藉由由半導體晶片的焊墊上形成的導電互連裝置，將半導體晶片面朝下電連接至一支持基板上。流程200在步驟210中，在半導體晶片的表面沉積一介電層，該介電層可以是，例如矽氧化物，矽氮化物，聚醯亞胺，BCB薄膜，或者任何上述材料的組合。該介電層可以作為保護半導體晶片表面的鈍化層，和防止應力穿透到矽的應力緩衝層。可以是藉由旋轉塗佈製程或任何合適的化學氣相沉積製程沉積介電層。
在步驟215，流程200在介電層上製作幾個開口使得半導體晶片焊墊的一部分暴露出來。該步驟可以由光微影成像製程執行，例如進行光阻層的圖案化，然後藉由圖案化光阻的開口蝕刻介電層(例如在電漿反應器中進行反應)。可選擇的，光可定義的介電層(例如聚醯亞胺或BCB)可以用於定義圖案與形成開口。在一個實施例中，鈍化流程(例如流程200的步驟215)可以包括(1)沉積氧化矽和氮化物，(2)旋轉塗佈光定義的聚醯亞胺，(3)執行光徵影成像製程，在聚醯亞胺上形成開口，以及(4)使用圖案化的聚醯亞胺作為光罩而乾蝕刻氧化矽/氮化物鈍化薄膜。
在焊墊被設置開口後，在流程200的步驟220中，藉由濺鍍法、熱蒸鍍等方法沉積倒裝晶片互連結構的種子層。另外本發明流程200通過清洗、除去絕緣氧化物以及提供焊墊冶金來製備半導體晶片焊墊上的倒裝晶片互連點，該焊墊冶金在製作焊點和支持結構間良好的機械和電連接時保護半導體晶片。
種子層通常可以包括連續的金屬層，例如粘著層和擴散阻隔層。例如，粘著層可以很好地粘著到焊墊金屬和周圍介電層，提供一個強的、低應力的機械和電連接。擴散阻隔層可以限制焊料擴散進入下面的材質。在一個實施例中，鈦基底膜或鉻基底膜可以作為粘著層，鎳或鎢基底膜可以作為擴散阻隔層。在一些實施例中，鈦/鎢/銅或鈦/銅合金用於作為種子層。此外，種子層可以在半導體晶片的整個表面被濺鍍或蒸鍍，為電鍍電流提供良好的導電路徑。
在步驟225中，本發明流程200藉由例如電鍍的方法沉積倒裝晶片互連結構的非回焊基層。如上所述，非回焊基層可以包括，例如一層或多層由銅、鎳、錫或任何上述材料製成的合適的合金(例如錫-鉍，錫-銅或錫-銀)構成的金屬層。在一些實施例中，沉積銅作為非回焊基層。例如，流程210沉積非回焊基層形成一不可延長金屬層，該金屬層的尺寸為，例如厚度少於25微米，直徑為50～250微米。在一個實施例中，流程210可以用電鍍法沉積銅作為非回焊基層。非回焊基層的電鍍法比蒸鍍法更經濟更靈活。電鍍槽溶液和電流密度可以小心地得到控制，避免合金成分和半導體晶片上銅的厚度或高度的變化。
步驟230中，本發明流程200藉由例如電鍍的方法沉積倒裝晶片互連結構的可回焊應力消除層。該可回焊應力消除層可以包括，例如由錫、銦、錫-鉛合金，錫-鉍合金，錫-銅合金，錫-銀合金和任何上述材料製成的合適的三元合金(例如錫-銀-銅合金)構成的焊接材料。在一些實施例中，錫被沉積作為可倒裝晶片互連結構的可回焊應力消除層。另外，可回焊應力消除層在一預定的高溫下回焊，該回焊溫度與焊料的回焊溫度有關，可以比焊料熔化溫度高10～30度。
在一個實施例中，可回焊應力消除層沉積的焊料量(例如厚度)可以根據倒裝晶片互連結構的層結構和整體幾何形態預先決定。例如，應力消除層的厚度可以與非回焊主體層厚度成一定比例。在這種情況下，應力消除層可以有充足的材料作為吸收產生機械應力的避震器。在一些實施例中，可回焊應力消除層沉積的焊料量厚度為25～50微米。
在沉積完可回焊應力消除層後，步驟235中，本發明流程200藉由如電鍍的方法沉積倒裝晶片互連結構的非回焊主體層。該非回焊主體層可以作為倒裝晶片互連結構的主要部分或者延長部分。另外，該非回焊主體層可以包括，例如一層或多層由銅、鎳、錫或任何上述材料製成的合適的合金(例如錫-鉍，錫-銅或錫-銀)構成的金屬層。在一些實施例中，流程200電鍍銅作為延長的可回焊主體層，厚度為50～75微米，寬或直徑為50～250微米。
在步驟240中，本發明流程200藉由例如電鍍的方法沉積倒裝晶片互連結構的可回焊熔接層。該熔接層可以包括，例如由錫、銦、錫-鉛合金，錫-鉍合金，錫-銅合金，錫-銀合金和任何上述材料製成的合適的三元合金(例如錫-銀-銅合金)構成的焊接材料。另外，可回焊熔接層在一預定的高溫下熔化，該高溫對應於焊料的回焊溫度。在一個實施例中，可回焊熔接層和可回焊應力消除層可以是由相同的焊接材料構成，且在相同的回焊溫度下回焊。
可回焊熔接層的焊料量可以預先確定，從而當回焊過程中焊料處於熔化狀態時，絕大部分的可回焊熔接層可以保持在互連位置(例如第1B圖中的金屬互連件120)。在一些實施例中，可回焊熔接層沉積的焊料量厚度為15～35微米。在這種情況下，可避免焊料超出的問題，也無需使用錫料壩。例如，電鍍製程可以讓沉積的焊料量得到更好的控制，使焊料更均勻地沉積在半導體晶片上。可回焊熔接層的焊料量與下面各種因素有關：焊料種類、非回焊主體層尺寸，互連位置的材料、半導體芯片質量、銅柱的數量、焊料回焊時的回焊溫度曲線、預期的回焊焊料和銅柱的最終尺寸以及焊接助熔劑種類。
本發明公開了一些實施例。然而可以預見的是在不脫離本發明描述的實施例的範圍和精神的情況下可以進行各種修改。例如，第3圖為具有一應力消除裝置的倒裝晶片互連結構的剖面圖，該應力消除裝置設置在支持基板或互連基板上，而非半導體晶片上。如上所述，倒裝晶片互連結構300可用於將半導體晶片(未圖示)連接至支持基板302。支持基板302具有一或多層金屬互連件304，提供支持基板302跟其他設備之間的電連接。支持基板302同時還具有一保護層(例如一介電膜)作為焊料光罩層以保護支持基板302的表層。
如第3圖所示，倒裝晶片互連結構300包括一非回焊基層310，連接支持基板302的金屬互連件304。在一些實施例中，非回焊基層310由銅製成。例如，非回焊基層310可以是不可延長的金屬層，其尺寸為例如厚度少於10微米，寬度或直徑為50～250微米。
製作倒裝晶片互連結構300的細節已經在對第2圖的闡述中討論過了。
100．．．具有應力消除裝置的倒裝晶片互連結構
102．．．半導體晶片
104．．．焊墊
106．．．應力消除層
108．．．種子層
110、310．．．非回焊基層
112．．．可回焊應力消除層
114．．．非回焊主體層
116．．．可回焊熔接層
120．．．支持基板的金屬互連件
150．．．倒裝晶片組裝件
300．．．倒裝晶片互連結構
302．．．支持基板
304．．．金屬互連件
第1A圖和第1B圖為半導體晶片上具有應力消除裝置的倒裝晶片互連結構剖面圖(其中第1B圖是回焊後的剖截面圖)。
第1C圖和第1D圖為半導體晶片和支持基板之間具有應力消除裝置的倒裝晶片互連結構剖面圖(其中第1D圖是回焊後的剖面圖)。
第2圖為本發明實施例之一的製造具有應力消除裝置的倒裝晶片的方法流程圖。
第3圖為支持基板具有應力消除裝置的倒裝晶片互連結構剖面圖。
在不同圖式中相同的元件符號表示相同的元件。
100．．．具有應力消除裝置的倒裝晶片互連結構
102．．．半導體晶片
104．．．焊墊
106．．．應力消除層
108．．．種子層
110．．．非回焊基層
112．．．可回焊應力消除層
114．．．非回焊主體層
116．．．可回焊熔接層

Claims (30)

  1. 一種倒裝晶片組裝件，包括：一半導體工作件；多個互連結構，連接至該半導體工作件，每個互連結構包括：一第一非回焊金屬層，與該半導體工作件電連接；一第二非回焊金屬層；至少一層可在一第一預定回焊溫度下進行回焊的可回焊應力消除層；其中所述的可回焊應力消除層位於該第一非回焊金屬層和該第二非回焊金屬層之間。
  2. 如申請專利範圍第1項所述的倒裝晶片組裝件，其中所述的半導體工作件上具有一個或多個焊墊，用於連接該等互連結構。
  3. 如申請專利範圍第2項所述的倒裝晶片組裝件，其中所述的互連結構還包括有種子層沉積在所述的一焊墊上，用於改進該等互連結構和該半導體工作件上該焊墊之間的粘著力。
  4. 如申請專利範圍第1項所述的倒裝晶片組裝件，其中所述的第一非回焊金屬層具有高於第一預定回焊溫度的一第一熔化溫度，其中所述的第二非回焊金屬層具有高於該第一預定回焊溫度的一第二熔化溫度。
  5. 如申請專利範圍第4項所述的倒裝晶片組裝件，其中所述的第一熔化溫度與該第二熔化溫度相同。
  6. 如申請專利範圍第1項所述的倒裝晶片組裝件，其中所述的可回焊應力消除層的熔化溫度比該第一預定回焊溫度低10~30度。
  7. 如申請專利範圍第1項所述的倒裝晶片組裝件，還包括一支持基板，其中所述的每個互連結構還包括與該支持基板連接的一可回焊熔接層，在一第二預定回焊溫度下能夠被回焊。
  8. 如申請專利範圍第7項所述的倒裝晶片組裝件，其中所述的第一預定回焊溫度與該第二預定回焊溫度相同。
  9. 如申請專利範圍第7項所述的倒裝晶片組裝件，其中所述的第一預定回焊溫度高於該第二預定回焊溫度，從而使得該可回焊應力消除層不會在該第二預定回焊溫度下被回焊。
  10. 如申請專利範圍第1項所述的倒裝晶片組裝件，其中所述的第一非回焊金屬層和該第二非回焊金屬層，分別為銅、鎳或錫構成。
  11. 如申請專利範圍第1項所述的倒裝晶片組裝件，其中所述的第二非回焊金屬層比該第一非回焊金屬層厚。
  12. 如申請專利範圍第1項所述的倒裝晶片組裝件，其中所述的可回焊應力消除層是由錫、銦、錫-鉛合金，錫-鉍合金、錫-銅合金、錫-銀合金及錫-銀-銅合金中的一種構成。
  13. 一種製造倒裝晶片組裝件的方法，該方法包括： 提供一半導體工作件，具有一個或多個焊墊；沉積一第一非回焊金屬層，該非回焊金屬層具有高於一第一預定回焊溫度的一第一熔化溫度；沉積一可回焊應力消除層，該可回焊應力消除層在該第一預定回焊溫度下能被回焊；沉積一第二非回焊金屬層，該非回焊金屬層具有高於該第一預定回焊溫度的一第二熔化溫度，從而使得沉積的非回焊應力消除層位於該第一非回焊金屬層和該第二非回焊金屬層之間。
  14. 如申請專利範圍第13項所述的方法，其中所述的第一預定回焊溫度比該可回焊應力消除層的熔化溫度高10~30度。
  15. 如申請專利範圍第13項所述的方法，還包括：沉積一可回焊熔接層，該可回焊熔接層在一第二預定回焊溫度下能被回焊。
  16. 如申請專利範圍第15項所述的方法，其中所述的第一預定回焊溫度與該第二預定回焊溫度相同。
  17. 如申請專利範圍第15項所述的方法，其中所述的第一預定回焊溫度高於該第二預定回焊溫度，從而使得該可回焊應力消除層不會在該第二預定回焊溫度下被回焊。
  18. 如申請專利範圍第15項所述的方法，其中所述的沉積的可回焊應力消除層比沉積的可回焊熔接層厚。
  19. 如申請專利範圍第13項所述的方法，還包括： 在一或多個焊墊上圖案化出具有開口的一介電層；在每個焊墊上沉積一種子層。
  20. 如申請專利範圍第19項所述的方法，其中所述的沉積的第一非回焊金屬層位於沉積的種子層上。
  21. 如申請專利範圍第13項所述的方法，其中所述的第一熔化溫度與該第二熔化溫度相同。
  22. 如申請專利範圍第13項所述的方法，其中所述的沉積的第二非回焊金屬層比沉積的第一非回焊金屬層厚。
  23. 如申請專利範圍第13項所述的方法，其中所述的第一非回焊金屬層和該第二非回焊金屬層，分別為銅、鎳或錫構成。
  24. 如申請專利範圍第13項所述的方法，其中所述的沉積的可回焊應力消除層由錫、銦、錫-鉛合金，錫-鉍合金、錫-銅合金、錫-銀合金及錫-銀-銅合金中的一種構成。
  25. 一種倒裝晶片組裝件，包括一支持基板；多個互連結構，連接至該支持基板，其中每個互連結構包括：一第一非回焊金屬層，與該支持基板電連接；一第二非回焊金屬層；以及一互連結構應力消除裝置，至少包括位於該第一非回焊金屬層和該第二非回焊金屬層之間的一可回焊應 力消除層。
  26. 如申請專利範圍第25項所述的倒裝晶片組裝件，其中所述的可回焊應力消除層在一第一預定回焊溫度下能被回焊，每個互連結構還包括在一第二預定回焊溫度下能被回焊且位於該第二非回焊金屬層上的一可回焊熔接層。
  27. 如申請專利範圍第26項所述的倒裝晶片組裝件，其中所述的第一預定回焊溫度比該第二預定回焊溫度高，因此該可回焊應力消除層不會在該第二預定回焊溫度下被回焊。
  28. 如申請專利範圍第25項所述的倒裝晶片組裝件，還包括一半導體工作件，其中所述的每個互連結構還包括位於該第二非回焊金屬層上且與該半導體工作件電連接的一可回焊熔接層，在一第二預定回焊溫度下能夠被回焊，用於熔接該半導體工作件。
  29. 如申請專利範圍第25項所述的倒裝晶片組裝件，其中所述的支持基板包括一金屬互連件，所述的互連結構還包括一種子層，沉積在所述金屬互連件上，用於改進該互連結構和該金屬互連件之間的粘著力。
  30. 如申請專利範圍第25項所述的倒裝晶片組裝件，還包括該支持基板上的一金屬互連件；該互連結構還包括一種子層，該種子層沉積在上述金屬互連件上，該種子層之上依次為該第一非回焊金屬層、作為該互連結構應力消除裝置的該可回焊應力消除層、該第二非 回焊金屬層，該第二非回焊金屬層通過一可回焊熔接層與一半導體工作件電連接。
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