TWI433851B - 官能化雜并苯及由它形成之電子裝置 - Google Patents
官能化雜并苯及由它形成之電子裝置 Download PDFInfo
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- TWI433851B TWI433851B TW096112011A TW96112011A TWI433851B TW I433851 B TWI433851 B TW I433851B TW 096112011 A TW096112011 A TW 096112011A TW 96112011 A TW96112011 A TW 96112011A TW I433851 B TWI433851 B TW I433851B
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- -1 butylphenyl group Chemical group 0.000 claims description 138
- 125000004432 carbon atom Chemical group C* 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 33
- 125000000217 alkyl group Chemical group 0.000 claims description 24
- 125000003118 aryl group Chemical group 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 229910052736 halogen Inorganic materials 0.000 claims description 14
- 150000002367 halogens Chemical class 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 11
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 8
- 125000003545 alkoxy group Chemical group 0.000 claims description 8
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 8
- 150000002431 hydrogen Chemical group 0.000 claims description 8
- 125000003944 tolyl group Chemical group 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 239000011593 sulfur Substances 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 6
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 6
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
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- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
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- RMSGQZDGSZOJMU-UHFFFAOYSA-N 1-butyl-2-phenylbenzene Chemical group CCCCC1=CC=CC=C1C1=CC=CC=C1 RMSGQZDGSZOJMU-UHFFFAOYSA-N 0.000 claims description 3
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- HJJOROPSUROZSX-UHFFFAOYSA-N c1cc2c(cccc2[nH]1)C#Cc1ccccc1 Chemical compound c1cc2c(cccc2[nH]1)C#Cc1ccccc1 HJJOROPSUROZSX-UHFFFAOYSA-N 0.000 claims description 3
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- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H—ELECTRICITY
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thin Film Transistor (AREA)
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
Description
此電子裝置及其特定組件係由國家標準技術局(NIST)獎勵之美國政府合作協定第70NANBOH3033號資助。美國政府具有關於以下描述之裝置及特定半導體組件的特定權利。
本揭示大致關於聚合物及其用途。更特別地,具體實施例之揭示係關於一種以例如烷基乙炔基或烷基芳基乙炔基與在此描述之其他適當基官能化之雜并苯,及此成分可選擇作為溶液可處理且實質上安定之有機電子裝置(如薄膜電晶體)中通道半導體。
現在希望有以溶劑溶解度優良,為溶液可處理性之在此描述的聚合物(如官能化雜并苯)製造之有機裝置,如薄膜電晶體TFT;及此裝置具有機械耐久性與結構撓性,其對於在塑膠基板上製造撓性TFT極為需要。撓性TFT可設計通常涉及結構撓性與機械耐久性特性之電子裝置。將塑膠基板與官能化雜并苯成分一起使用可將傳統硬矽TFT轉變成機械上較耐久且結構上撓性之TFT設計。其對如大面積影像感應器、電子文件及其他顯示媒體之大面積裝置有特定之價值。對低階微電子之積體電路邏輯元件(如智慧卡、無線頻率識別(RFID)標籤、及記憶/儲存裝置)選擇官能化雜并苯TFT可增強其機械耐久性,因此其使用壽命延長。
據信許多種半導體材料在暴露於空氣時不安定,因為其被周圍氧氧化地摻雜而造成導電度增加。結果為由這些材料製造之裝置的關電流大,因此開/關電流比例小。因而對許多種這些材料在材料處理及裝置製造期間通常特別嚴密地防備以排除環境氧,以避免或使氧化性摻雜最小。這些防備手段增加製造成本,因此抵消尋求特定半導體TFT作為對非晶矽技術之經濟性替代方案,特別是用於大面積裝置。在本揭示之具體實施例中避免或使這些及其他缺點最小化。
由在此描述的聚合物(如官能化雜并苯)製造之TFT因其可提供機械耐久性,同時亦避免真空沉積,結構撓性,及可直接併入裝置之有效媒體中,因此增強裝置用於運輸之小型化的可能性,可在功能上及結構上較習知矽技術更符所需。
真空沉積難以對大面積格式達成一致之薄膜品質。聚合物TFT,如藉溶液法由立體規則性成分(例如立體規則性聚(3-烷基噻吩-2,5-二基))製造者,雖然提供某種流動性,其因在空氣中氧化摻雜之傾向而受害。因此對於實際上低成本TFT設計,安定且為溶液可處理性,其中其性能不受周圍氧負面地影響之半導體材料有價值,例如以聚(3-烷基噻吩-2,5-二基)形成之TFT對空氣非常敏感。由這些材料製造之TFT在周圍條件通常關電流大,開關電流比例非常小,及其性能特性快速地降低。
本揭示之一個特點為提供一種聚合物半導體,其可用於微電子裝置應用,如TFT裝置。
本揭示之另一個特點為提供一種官能化雜并苯,其帶隙為約1.5 eV至約3 eV,如由其薄膜之吸收光譜所測定,而且此官能化雜并苯適合作為TFT半導體通道層材料。
本揭示之又一個特點為提供一種官能化雜并苯,其可作為微電子組件,而且此官能化雜并苯在常用有機溶劑(如二氯甲烷、四氫呋喃、甲苯、二甲苯、1,3,5-三甲苯、氯苯等)中呈現例如至少約0.1至約95重量%之溶解度,因此這些成分可藉溶液法(如旋塗、網版印刷、壓印、浸塗、溶液流延、噴墨印刷等)經濟地製造。
本揭示之另一個特點為提供一種具官能化雜并苯通道層之電子裝置,如TFT,而且此層具有約10-4
至約10-9
S/公分(Siemens/公分)之導電度。
亦在本揭示之又一個特點中提供一種新穎聚合物(如官能化雜并苯)及其裝置,而且此裝置對氧之負面影響呈現增強之抗性,即這些裝置呈現相當高之開/關電流比例,而且其性能實質上不似以立體規則性聚(3-烷基噻吩-2,5-二基)或雜并苯製造之類似裝置快速地降低。
另外在本揭示之又一個特點中提供一種結構特點獨特之新穎聚合物(如官能化雜并苯),其在適當之處理條件下有助於分子自我排列,而且此結構特點亦增強裝置性能之安定性。適當之分子排列可在薄膜中得到較高之分子結構次序,其對有效之電荷載子運輸為重要的,因此得到較高之電性能。
具體實施例中揭示如官能化雜并苯之聚合物及其裝置。更特別地,本揭示關於由式(I)描述或包括之聚合物
其中R表示適當之烴,如烷基、芳基或雜芳基;各R1
與R2
獨立地為氫(H)、適當之烴;含雜原子基或鹵素;R3
與R4
獨立地為適當之烴、含雜原子基或鹵素;x與y表示基之數量;Z表示硫、氧、硒、或NR’,其中R’為氫、烷基或芳基;m與n各表示環之數量,例如零(0)至約3;而且更特別地,x與y可為例如零至約12,而且更特別是其中x與y各為約3至約7。
具例如約1至約30個,包括約4至約18個碳原子(包括全部在此範圍內之數目,例如4、5、6、7、8、9、10、11、12、13、14、15、16、17、與18),而且進一步包括約6至約16個碳原子之烷基的實例為丁基、戊基、己基、庚基、辛基、壬基、癸基、十一碳基、十二碳基、十三碳基、十四碳基、十五碳基、十六碳基、十七碳基、十八碳基、十九碳基、或二十碳基、其異構形式、其混合物等;具約7至約49個碳原子,約6至約37個碳原子,約13至約25個碳原子之烷基芳基,如甲基苯基、經取代苯基等;或具約6至約48個碳原子芳基,如苯基。
含雜原子基包括例如多醚、三烷基矽烷基、雜芳基等;而且更特別是噻吩基、呋喃基與吡啶芳基(pyridiaryl)。雜成分可選自許多已知原子,如硫、氧、氮、矽、硒等。
在具體實施例中,R可為不分枝烷基,例如約2至約12個碳原子;不分枝烷基芳基,其中烷基含例如約4至約12個碳原子;R1
與R12
為氫、烷基、芳基、鹵素、氰基、硝基等;m與n各為零、或1至約3;及x與y各為零、或1至約12。
烴為已知的且包括烷基、烷氧基、芳基、烷基芳基、經取代烷基、烷氧基、芳基等。指定描述性實例為
其中R5
為例如甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一碳基、十二碳基、十三碳基、十四碳基、十五碳基、十六碳基、十七碳基、或十八碳基;三氟甲基、氟乙基、全氟丙基、全氟丁基、全氟戊基、全氟己基、全氟庚基、全氟辛基、全氟壬基、全氟癸基、全氟十一碳基、或全氟十二碳基;苯基、甲基苯基(甲苯基)、乙基苯基、丙基苯基、丁基苯基、戊基苯基、己基苯基、庚基苯基、辛基苯基、壬基苯基、癸基苯基、十一碳基苯基、十二碳基苯基、十三碳基苯基、十四碳基苯基、十五碳基苯基、十六碳基苯基、十七碳基苯基、十八碳基苯基、三氟甲基苯基、氟乙基苯基、全氟丙基苯基、全氟丁基苯基、全氟戊基苯基、全氟己基苯基、全氟庚基苯基、全氟辛基苯基、全氟壬基苯基、全氟癸基苯基、全氟十一碳基苯基、或全氟十二碳基苯基;及其中X為F、Cl、Br、CN、或NO2
。
具體實施例中之聚合物,如官能化雜并苯,溶於或實質上溶於常用塗覆溶劑中,例如在具體實施例中其在如二氯甲烷、1,2-二氯乙烷、四氫呋喃、甲苯、二甲苯、1,3,5-三甲苯、氯苯、二氯苯等之溶劑中呈現至少約0.1重量%,而且更特別是約10至約95重量%之溶解度。此外在本揭示之具體實施例中,官能化雜并苯在製成TFT裝置之半導體通道層時提供安定之導電性,例如約10-9
S/公分至約10-4
S/公分,而且更特別是約10-8
S/公分至約10-5
S/公分,如由習知四探針導電度測量測定。
據信聚合物在由溶液製成例如厚約10奈米至約500奈米或約100奈米至約300奈米之薄膜時,這些材料在周圍條件較由雜并苯製造之類似裝置安定。在未保護時,上述聚合物材料及裝置在暴露於周圍氧後通常安定數週,而非聚(3-烷基噻吩-2,5-二基)情況之數日或數小時,因此本揭示具體實施例中由官能化雜并苯製造之裝置可提供較高之開/關電流比例,而且在材料製備、裝置製造及評估期間未嚴密防備以排除周圍氧時,其性能特性實質上不似未官能化雜并苯或聚(3-烷基噻吩-2,5-二基)快速地改變。在具體實施例中揭示之官能化雜并苯對抗氧化性摻雜之安定性通常不必在惰性大氣中處理,特別是對低成本裝置製造,因此其方法較簡單且較節省成本,而且其製造可應用於大型製法。
本揭示之官能化雜并苯的製備通常可如在此描述而完成。更特別地,一種製法描述於略圖1。
5,11-癸炔基蒽[2,3-b:6,7-b’]二噻吩/5,11-癸炔基蒽[2,3-b:7,6-b’]二噻吩(1a,反及順式異構物之混合物)與5,11-貳(4-苯基乙炔基)蒽[2,3-b:6,7-b’]二噻吩/5,11-貳(4-苯基乙炔基)蒽[2,3-b:7,6-b’]二噻吩(8a,反及順式異構物之混合物)可如略圖1所示而產生。首先在四氫呋喃(THF)中於例如60℃之高溫將1-癸炔(得自Sigma-Aldrich)與約1莫耳當量之氯化異丙鎂(得自Sigma-Aldrich)反應適當之時間,如30分鐘。然後對反應混合物加入蒽[2,3-b:6,7-b’]二噻吩-5,11-二酮/蒽[2,3-b:7,6-b’]二噻吩-5,11-二酮(反及順式異構物之混合物)(此起始材料係依照De la Cruz,P.等人之J.Org.Chem.1992,57,6192製備),繼而在例如60℃之高溫攪拌適當之時間,如1小時。最後將氯化錫(II)(SnCl2
)於10% HCl之溶液加入反應混合物,而且在例如60℃之高溫攪拌適當之時間,如30分鐘。在加工及再結晶後得到實質上純化合物1a。化合物8a係由1-乙炔基-4-戊基苯(得自Sigma-Aldrich)代替1-癸炔開始而類似地製備。
本揭示之態樣關於一種電子裝置,其含在此描述之官能化雜并苯;一種薄膜電晶體裝置,其包括基板、閘極、閘介電層、源極、與吸極,而且接觸源/吸極與閘介電層為包括在此描述之官能化雜并苯的半導體層,而且更特別是一種電子裝置,其包括含式(I)成分之半導電性材料
第1圖略示地描述一種TFT組態10,其包括基板16,與其接觸為之金屬接點18(閘極),及一層絕緣介電層14,閘極之一部份或全部閘極接觸介電層14,在此層14上沉積兩個金屬接點20與22(源與吸極)。在其上方且於金屬接點20與22間為5,11-癸炔基蒽[2,3-b:6,7-b’]二噻吩/5,11-癸炔基蒽[2,3-b:7,6-b’]二噻吩(1a,其順及反式異構物之混合物)之聚合物層12。閘極可全部包括於基板中、介電層中等。
第2圖略示地描述另一種TFT組態30,其包括基板36、閘極38、源極40、與吸極42、絕緣介電層34、及5,11-貳(4-苯基乙炔基)蒽[2,3-b:6,7-b’]二噻吩/5,11-貳(4-苯基乙炔基)蒽[2,3-b:7,6-b’]二噻吩(8a,其順及反式異構物之混合物)之官能化雜并苯半導體層32。
第3圖略示地描述又一種TFT組態50,其包括重度n摻雜矽晶圓56(可作為閘極)、熱成長氧化矽介電層54、第2圖之官能化雜并苯半導體層52,在其上方沉積源極60與吸極62;及閘極接點64。
第4圖略示地描述一種TFT組態70,其包括基板76、閘極78、源極80、吸極82、第2圖之官能化雜并苯半導體層72、及絕緣介電層74。
又參考例如已知之TFT裝置可預見其他未揭示之裝置,特別是TFT裝置。
在本發明之某些具體實施例中可將選用保護層併入第1、2、3、及4圖之各電晶體組態上方。對於第4圖之TFT組態,絕緣介電層74亦可作為保護層。
亦揭示下式之噻吩雜并苯半導體
其中R與R’為氫、烷基、不飽和烷基、芳基、經烷基取代芳基、經不飽和烷基取代芳基、或其混合物,及其中n表示環之數量,例如等於或大於3,如約3至約2,000,而且更特別是其中n=5,R’=H,及R=十二炔。
這些新穎之有機半導體,如用於TFT,可藉以下反應圖製備。
最終產物偏綠且其在波長740奈米處顯示UV最大峰。在740奈米處之最大峰吸收度的UV光譜資料列於表1。其顯示在周圍條件結構(2)之溶液較五并苯安定。
在具體實施例中且進一步參考本揭示及圖式,裝置基板層通常視意圖應用可為包括各種適當矽形式之矽材料、玻璃板、塑膠膜或片等。對於結構上撓性裝置,其可選擇塑膠基板,例如聚酯、聚碳酸酯、聚醯亞胺片等。基板之厚度可為例如約10微米至超過10毫米,特別是對撓性塑膠基板,指定厚度為約50至約100微米,及對硬基板(如玻璃或矽)為約1至約10毫米。
可分離閘極及源與吸極且接觸半導體層之絕緣介電層通常可為無機材料膜、有機聚合物薄膜、或有機-無機複合物薄膜。介電層之厚度為例如約10奈米至約1微米,更指定厚度為約100奈米至約500奈米。適合作為介電層之無機材料的描述性實例包括氧化矽、氮化矽、氧化鋁、鈦酸鋇、鋯酸鈦酸鋇等;介電層用有機聚合物之描述性實例包括聚酯、聚碳酸酯、聚(乙烯酚)、聚醯亞胺、聚苯乙烯、聚(甲基丙烯酸酯)、聚(丙烯酸酯)、環氧樹脂等;及無機-有機複合物材料之描述性實例包括分散於聚合物(如聚酯、聚醯亞胺、環氧樹脂等)中之奈米化金屬氧化物顆粒。絕緣介電層視所使用介電材料之介電常數通常厚約50奈米至約500奈米。更特別地,介電材料具有例如至少約3之介電常數,如此約300奈米之適當介電體厚度可提供所需之電容,例如約10-9
至約10-7
F/平方公分。
例如位於介電層與源/吸極間且接觸為包括在此描述之官能化雜并苯的半導體層之活性半導體層,而且其中此層之厚度通常為例如約10奈米至約1微米,或約40至約100奈米。此層通常可藉本揭示官能化雜并苯溶液之溶液法製造,如旋塗、流延、網版印刷、壓印、或噴墨印刷。
閘極可為薄金屬膜、導電聚合物薄膜、由導電墨水或漿料形成之導電薄膜、或基板本身(例如重度摻雜矽)。閘極材料之實例包括但不限於鋁、金、鉻、氧化銦錫,導電聚合物,如聚苯乙烯磺酸酯之聚(3,4-伸乙二氧基噻吩)(PSS/PEDOT),由碳黑/石墨或膠體銀分散液含於聚合物黏合劑組成之導電墨水/漿料,如得自Acheson Colloids Company之Electrodag,及得自Noelle Industries之填銀導電型熱塑性墨水等。閘極可藉金屬或導電性金屬氧化物之真空蒸發、濺射製備,藉旋塗、流延或印刷由導電聚合物溶液或導電墨水或分散液塗覆。閘極層之厚度為例如約10奈米至約10微米,及指定厚度對金屬膜為例如約10至約200奈米,及對聚合物導體為約1至約10微米。
源與吸極層可由對半導體層提供低電阻歐姆接點之材料製造。適合作為源與吸極之典型材料包括如閘極材料者,如金、鎳、鋁、鉑、導電聚合物、及導電墨水。此層之典型厚度為例如約40奈米至約1微米,更指定厚度為約100至約400奈米。TFT裝置含寬W及長L之半導體通道。半導體通道寬度可為例如約10微米至約5毫米,指定通道寬度為約100微米至約1毫米。半導體通道長度可為例如約1微米至約1毫米,更指定通道長度為約5微米至約100微米。
源極接地且對吸極施加通常為例如約0伏特至約-80伏特之偏移電壓,以在對閘極施加通常為約+10伏特至約-80伏特之電壓時,收集跨越半導體通道運輸之電荷載子。
對於本揭示TFT裝置之各種組件,在具體實施例中亦可選擇在此未列出之其他已知材料。
雖然不希望受理論限制,據信三級胺中央基功能主要為使暴露於氧之不安定性最小或避免,如此增加雜并苯在周圍條件下於溶液中之氧化安定性,而且烷基及/或烷基芳基取代基可使這些化合物溶於常用溶劑(如二氯乙烷)中。亦在具體實施例中,不分枝烷基可利於形成分層π堆疊,其對電荷運輸性質為有利之形式。
10...TFT組態
12...聚合物層
14...絕緣介電層
16...基板
18...閘極
20...源極
22...吸極
30...TFT組態
32...官能化雜并苯半導體層
34...絕緣介電層
36...基板
38...閘極
40...源極
42...吸極
50...TFT組態
52...官能化雜并苯半導體層
54...熱成長氧化矽介電層
56...重度n摻雜矽晶圓
60...源極
62...吸極
64...閘極
70...TFT組態
72...官能化雜并苯半導體層
74...絕緣介電層
76...基板
78...閘極
80...源極
82...吸極
第1至4圖描述本揭示之各種代表性具體實施例,其中選擇如官能化雜并苯之聚合物作為薄膜電晶體(TFT)組態中之通道或半導體材料。
30...TFT組態
32...官能化雜并苯半導體層
34...絕緣介電層
36...基板
38...閘極
40...源極
42...吸極
Claims (7)
- 一種電子裝置,其包括一種含式(I)成分之半導電性材料
- 如申請專利範圍第1項之裝置,其中R1 與R2 中至少之一為氫;R1 與R2 中至少之一為1~30個碳原子的經取代或未取代的烷基;R1 與R2 中至少之一為6~48個碳原子的經取代或未取代的芳基;R1 與R2 中至少之一為鹵素;R1 與R2 中至少之一為氰基或硝基;R3 與R4 中至少之一為1~30個碳原子的經取代或未取代的烷基;或R3 與R4 至少之一為6~48個碳原子的經取代或未取代的芳基。
- 如申請專利範圍第1項之裝置,其中m為0至約3之數目;其中m為2;其中m為1;其中n為0至約3之數目;其中x為0至約12之數目;及其中y為0至約12之數目。
- 一種薄膜電晶體,其包括基板、閘極、閘介電層、源極、與吸極,而且接觸源/吸極與閘介電層為一種包括下式成分之半導體層
- 如申請專利範圍第4項之薄膜電晶體,其中該芳基及該烷基芳基為苯基、甲苯基、丁基苯基、戊基苯基、己基苯基、庚基苯基、辛基苯基、壬基苯基、癸基苯基、十 一碳基苯基、十二碳基苯基、十三碳基苯基、十四碳基苯基、十五碳基苯基、十六碳基苯基、十七碳基苯基、十八碳基苯基、萘基、甲基萘基、乙基萘基、丙基萘基、丁基萘基、戊基萘基、己基萘基、庚基萘基、辛基萘基、壬基萘基、癸基萘基、十一碳基萘基、十二碳基萘基、蒽基、甲基蒽基、乙基蒽基、丙基蒽基、丁基蒽基、戊基蒽基、辛基蒽基、壬基蒽基、癸基蒽基、十一碳基蒽基、或十二碳基蒽基。
- 如申請專利範圍第4項之薄膜電晶體,其中半導體層為下式/結構之官能化雜并苯
- 如申請專利範圍第4項之薄膜電晶體,其中該半導體層為5,11-癸炔基蒽[2,3-b:6,7-b’]二噻吩/5,11-癸炔基蒽[2,3-b:7,6-b’]二噻吩(1a)與5,11-貳(4-苯基乙炔基)蒽[2,3-b:6,7-b’]二噻吩/5,11-貳(4-苯基乙炔基)蒽[2,3-b:7,6-b’]二噻吩(8a)、或其反及順式異構物之混合物。
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US20080142793A1 (en) * | 2006-11-10 | 2008-06-19 | Tang Ming L | Organic Semiconductors |
WO2008107089A1 (en) * | 2007-03-07 | 2008-09-12 | University Of Kentucky Research Foundation | Silylethynylated heteroacenes and electronic devices made therewith |
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US8115200B2 (en) * | 2007-12-13 | 2012-02-14 | E.I. Du Pont De Nemours And Company | Electroactive materials |
US8461291B2 (en) * | 2007-12-17 | 2013-06-11 | E I Du Pont De Nemours And Company | Organic electroactive materials and an organic electronic device having an electroactive layer utilizing the same material |
US8067764B2 (en) * | 2007-12-17 | 2011-11-29 | E. I. Du Pont De Nemours And Company | Electroactive materials |
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