TWI430387B - 輔助板之貼合方法 - Google Patents

輔助板之貼合方法 Download PDF

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Publication number
TWI430387B
TWI430387B TW094141922A TW94141922A TWI430387B TW I430387 B TWI430387 B TW I430387B TW 094141922 A TW094141922 A TW 094141922A TW 94141922 A TW94141922 A TW 94141922A TW I430387 B TWI430387 B TW I430387B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
plate
adhesive layer
adhesive
auxiliary
Prior art date
Application number
TW094141922A
Other languages
English (en)
Chinese (zh)
Other versions
TW200629462A (en
Inventor
Yoshihiro Inao
Atsushi Miyanari
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200629462A publication Critical patent/TW200629462A/zh
Application granted granted Critical
Publication of TWI430387B publication Critical patent/TWI430387B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)
TW094141922A 2004-11-29 2005-11-29 輔助板之貼合方法 TWI430387B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004344737A JP4652030B2 (ja) 2004-11-29 2004-11-29 サポートプレートの貼り付け方法

Publications (2)

Publication Number Publication Date
TW200629462A TW200629462A (en) 2006-08-16
TWI430387B true TWI430387B (zh) 2014-03-11

Family

ID=36634584

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141922A TWI430387B (zh) 2004-11-29 2005-11-29 輔助板之貼合方法

Country Status (4)

Country Link
JP (1) JP4652030B2 (ko)
KR (1) KR101099248B1 (ko)
CN (1) CN100530527C (ko)
TW (1) TWI430387B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5027460B2 (ja) * 2006-07-28 2012-09-19 東京応化工業株式会社 ウエハの接着方法、薄板化方法、及び剥離方法
CA2609169C (en) * 2006-11-15 2011-01-18 Rohm And Haas Company Adhesives for elastomers
JP4825695B2 (ja) 2007-01-19 2011-11-30 東京応化工業株式会社 液状溶剤当接ユニット
JP5090789B2 (ja) * 2007-05-30 2012-12-05 東京応化工業株式会社 貼り合わせ装置、接着剤の溶解を防ぐ方法、及び貼り合わせ方法
JP2009130218A (ja) * 2007-11-26 2009-06-11 Tokyo Ohka Kogyo Co Ltd 貼付装置および貼付方法
JP4742252B2 (ja) * 2008-12-10 2011-08-10 カシオ計算機株式会社 半導体装置の製造方法
KR101027858B1 (ko) * 2009-01-13 2011-04-07 도레이첨단소재 주식회사 반도체 박막 웨이퍼 가공용 웨이퍼 서포트 점착필름
JP5520491B2 (ja) * 2009-01-27 2014-06-11 株式会社日立ハイテクノロジーズ 試料ステージ装置
JP6869101B2 (ja) * 2017-05-12 2021-05-12 株式会社ダイセル 接着剤層形成装置、半導体チップ製造ライン、及び積層体の製造方法
JP7220135B2 (ja) * 2018-11-01 2023-02-09 信越化学工業株式会社 積層体の製造方法、及び基板の製造方法
JP7396863B2 (ja) * 2019-11-06 2023-12-12 株式会社ディスコ 保護部材の形成方法
JP7335136B2 (ja) * 2019-11-06 2023-08-29 株式会社ディスコ 樹脂保護部材形成装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208842A (ja) * 1985-03-14 1986-09-17 Nippon Telegr & Teleph Corp <Ntt> 半導体ウエハ支持基板
JP2001077304A (ja) * 1999-06-28 2001-03-23 Mitsubishi Gas Chem Co Inc 電子部品の製造法
JP2002059363A (ja) * 2000-08-23 2002-02-26 Chemitoronics Co Ltd ウエーハ支持体
KR100575867B1 (ko) * 2002-12-26 2006-05-03 주식회사 하이닉스반도체 반도체 다이 접착방법
JP4364535B2 (ja) * 2003-03-27 2009-11-18 シャープ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
CN100530527C (zh) 2009-08-19
JP2006156683A (ja) 2006-06-15
TW200629462A (en) 2006-08-16
KR101099248B1 (ko) 2011-12-27
CN1815688A (zh) 2006-08-09
JP4652030B2 (ja) 2011-03-16
KR20060059826A (ko) 2006-06-02

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