TWI424038B - An agent composition, a method for manufacturing a semiconductor device, and a semiconductor device - Google Patents

An agent composition, a method for manufacturing a semiconductor device, and a semiconductor device Download PDF

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Publication number
TWI424038B
TWI424038B TW100135612A TW100135612A TWI424038B TW I424038 B TWI424038 B TW I424038B TW 100135612 A TW100135612 A TW 100135612A TW 100135612 A TW100135612 A TW 100135612A TW I424038 B TWI424038 B TW I424038B
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Taiwan
Prior art keywords
semiconductor device
adhesive composition
semiconductor
connection
bis
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TW100135612A
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English (en)
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TW201229176A (en
Inventor
Kazutaka Honda
Akira Nagai
Tetsuya Enomoto
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Hitachi Chemical Co Ltd
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Publication of TW201229176A publication Critical patent/TW201229176A/zh
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Publication of TWI424038B publication Critical patent/TWI424038B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Description

接著劑組成物、半導體裝置之製造方法及半導體裝置
本發明係關於接著劑組成物、半導體裝置之製造方法及半導體裝置。
近年來，已廣泛採用使用金線等金屬細線之線接合方式，將半導體晶片安裝連接於基板上。另一方面，為了因應對半導體裝置之小型化、薄型化、高性能、高積體化、高速化等之要求，正逐漸採用在半導體晶片與基板間形成稱為凸塊之導電性突起，以使半導體晶片與基板連接之覆晶連接方式(FC連接方式)。
例如，關於半導體晶片及基板間之連接，於BGA(Ball Grid Array，球格柵陣列)、CSP(Chip Size Package，晶片尺寸封裝)等中廣泛使用之COB(Chip On Board，基板上固晶)型之連接方式亦適用FC連接方式。又，FC連接方式亦廣泛使用於在半導體晶片上形成連接部(凸塊或配線)，以使半導體晶片間連接之COC(Chip On Chip，晶片堆疊)型之連接方式(參照例如專利文獻1)。
然而，為因應更小型化、薄型化、高性能化之要求，將上述連接方式層疊．多階段化之晶片堆疊型封裝、POP(Package On Package，封裝層疊)、及TSV(Through-Silicon Via，穿矽通孔)等亦開始廣泛普及。此等層疊． 多階段化之技術由於將半導體晶片等以三維方式配置，故相較於以二維方式配置之方法可縮小封裝。尤其，TSV技術於半導體性能之提高、雜訊減低、安裝面積之削減、省電化方面亦為有效，以作為下一世代之半導體配線技術而備受矚目。
上述連接部(凸塊或配線)中所用之主要金屬有焊料、錫、金、銀、銅、鎳等，亦可使用包含複數種該等金屬之導電材料。連接部中所使用之金屬由於會在表面氧化而生成氧化膜，或於表面附著氧化物等之雜質，故會有在連接部之連接面產生雜質之情況。若存在此種雜質時，會有使半導體晶片與基板間或兩個半導體晶片間之連接性、絕緣可靠度降低，而損及採用上述連接方式之優點之顧慮。
作為可抑制該等雜質之產生同時提高連接性之方法，例如有在連接前對基板或半導體晶片之表面進行前處理之方法，例如有施以在OSP(Organic Solderbility Preservatives，有機焊接性保存)處理中所使用之預助熔劑或防鏽處理劑之方法。然而，亦有於前處理後因預助熔劑或防鏽處理劑殘留並劣化，而使連接性降低之情況。
另一方面，依照以半導體密封材料(半導體密封用接著劑)密封半導體晶片及基板間等之連接部之方法，可在半導體晶片與基板或半導體晶片彼此連接之同時密封連接部。因此，可抑制連接部中所使用之金屬的氧化或抑制雜質對連接部之附著，保護連接部免於受到外部環境之影響。因此，可有效地提高連接性、絕緣可靠度、作業性、生 產率。
又，於以覆晶連接方式製造之半導體裝置中，為不使因半導體晶片與基板間之熱膨脹係數差或半導體晶片彼此間之熱膨脹係數差所致之熱應力集中於連接部而引起連接不良，必須以半導體密封材料將半導體晶片及基板間等之空隙加以密封。尤其半導體晶片與基板大多使用熱膨脹係數不同之成分，因而需要以半導體封裝材料進行密封以提高耐熱衝擊性。
使用上述半導體密封材料之密封方法大致上可分為毛細管流動(Capillary-Flow)方式及預塗佈(Pre-applied)方式(例如參照專利文獻2~6)。所謂毛細管流動方式，係於半導體晶片及基板連接後，於半導體晶片及基板間之空隙利用毛細現象注入液狀半導體密封材料之方式。所謂預塗佈方式，係於半導體晶片及基板連接之前，對半導體晶片或基板供給糊狀或薄膜狀的半導體密封材料，再將半導體晶片與基板連接之方式。關於該等密封方法，隨著近年來半導體裝置之小型化之進展，半導體晶片及基板間等之空隙變得狹小，若以毛細管流動方式注入會有需要長時間而使生產率降低之情況，或有無法注入之情況，又，即使可注入，亦有存在未填充部分而成為孔洞原因之情況。因此，由作業性．生產率．可靠度之觀點而言，預塗佈方式已作為可達成高性能．高積體．高速化之密封製作方法而成為主流。
[先前技術文獻]
專利文獻
專利文獻1：日本特開2008-294382號公報
專利文獻2：日本特開2001-223227號公報
專利文獻3：日本特開2002-283098號公報
專利文獻4：日本特開2005-272547號公報
專利文獻5：日本特開2006-169407號公報
專利文獻6：日本特開2006-188573號公報
於上述預塗佈方式中，為了在利用加熱加壓進行連接之同時，以半導體密封材料將半導體晶片及基板間之空隙加以密封，對半導體密封材料之含有成分有必要考慮連接條件加以選擇。於連接部彼此之連接，就充分確保連接性．絕緣可靠度之觀點而言，一般使用金屬接合。由於金屬接合為使用高溫(例如200℃以上)之連接方式，故會有因殘留於半導體密封材料中之揮發成分，或因半導體密封材料之含有成分之分解而新生成之揮發成分而使半導體密封材料產生氣泡之情況。因此，會產生稱為孔洞之氣泡，使半導體密封材料自半導體晶片或基板剝離。又，於加壓加熱/壓力釋放時，若發生上述孔洞或半導體晶片等之回彈(springback)，則會因將連接部彼此連接之連接凸塊之拉扯而產生連接部之破壞等之連接不良。由於這些原因，以往之半導體密封材料會有連接性．絕緣可靠度降低之 顧慮。
又，半導體密封材料不具有充分助焊劑活性(對金屬表面之氧化膜或雜質之去除效果)時，無法去除金屬表面之氧化膜或雜質，無法形成良好之金屬-金屬接合，因而有無法確保導通之情況。另外，當半導體密封材料之絕緣可靠度較低時，將難以對應於連接部之狹窄間距化而產生絕緣不良。由於這些原因，以往之半導體密封材料會有連接性．絕緣可靠度降低之顧慮。
使用半導體密封材料製造之半導體裝置於可靠度，更具體而言於耐熱性、耐濕性及耐回焊性方面需達到充分的等級。為確保耐回焊性，需在260℃左右之回焊溫度下，維持可抑制黏晶層(接著劑層)之剝離或破壞之高接著強度。
本發明係鑑於上述問題而完成者，其目的係提供一種可製作耐回焊性、連接可靠度、絕緣可靠度優異之半導體裝置之接著劑組成物，與使用該接著劑組成物之半導體裝置之製造方法及半導體裝置。
本發明提供一種接著劑組成物，其係於半導體晶片及配線電路基板各自的連接部互相電連接的半導體裝置、或複數的半導體晶片各自的連接部相互電連接的半導體裝置中密封連接部的接著劑組成物，該組成物含有環氧樹脂、硬化劑、與經具有以下述通式(1)所表示之基團之化合 物表面處理之丙烯酸系表面處理填料。
式(1)中，R1 表示氫原子或碳數1或2之烷基，R2 表示碳數1~30之伸烷基。
本發明又提供一種接著劑組成物，其係於半導體晶片及配線電路基板各自的連接部互相電連接的半導體裝置、或複數的半導體晶片各自的連接部相互電連接的半導體裝置中密封連接部的接著劑組成物，其中該組成物含有環氧樹脂、硬化劑、與具有以下述通式(1)所表示之基團的填料：
式(1)中，R1 表示氫原子或碳數1或2之烷基，R2 表示碳數1~30之伸烷基。
上述本發明之接著劑組成物，在含有環氧樹脂及硬化劑的前提下，進一步藉由含有丙烯酸系表面處理填料或具有以上述通式(1)所表示之基團之填料，使得即使在以高溫(例如200℃以上)進行金屬接合之覆晶連接方式中 用於作為半導體密封用接著劑時，仍可實現高度耐回焊性、連接可靠度及絕緣可靠度。
為提高接著劑組成物之耐回焊性，必須提高於高溫下之吸濕後接著力。然而，以往所使用之填料雖可減小吸濕率及熱膨脹率，進而有效地提高連接性．絕緣可靠度，但填料本身通常缺乏接著性。
於此，已知若將矽烷偶合劑與未經表面處理之填料一起包含於樹脂中，則可合成填料表面經矽烷偶合劑處理且依矽烷偶合劑之取代基不同而呈成各種表面狀態之填料。然而，矽烷偶合劑之揮發性較高，若在具有必須於高溫連接之金屬接合等之高溫製程之半導體裝置製造步驟中會成為產生孔洞之原因。同樣地，若對以往所使用之填料進行表面處理時，會有產生甲醇等揮發性高的有機物之情況，成為孔洞發生之原因。
一般而言，在半導體基板上形成有稱為抗焊劑之絕緣膜，抗焊劑大多含有丙烯酸系材料。於此，本發明人等發現藉由含有上述丙烯酸系表面處理填料或具有以上述通式(1)所表示之基團之填料，可提高接著劑組成物在高溫下之彈性率及吸濕後之接著力，並實現耐回焊性。本發明人等推測，於本發明之接著劑組成物中，藉由使用預先經表面處理之丙烯酸系表面處理填料或具有以上述通式(1)所表示之基團之填料，可抑制高揮發性物質之產生，同時由於丙烯酸系化合物與抗焊劑之接著性優異，故可提高與基板之連接性。又，本發明人等推測丙烯酸系表面處理 填料或具有以上述通式(1)所表示之基團之填料由於難以使連接部之絕緣可靠度降低，且難以使接著劑組成物之硬化物之熱膨脹率及彈性率降低，故可提高連接可靠度。
丙烯酸系表面處理填料或具有以上述通式(1)所表示之基團之填料對樹脂成分之分散性優異，可提高使用本發明之接著劑組成物所製作之半導體裝置中之密封(基板-晶片、晶片-晶片等)末端部之強度。
上述之接著力提高並非僅限於抗焊劑上，亦可展現於半導體晶片(SiO、SiN等)之間。
具有以上述通式(1)所表示之基團之化合物較佳為以下述通式(2)所表示之化合物。
式(2)中，R1 表示氫原子或碳數1或2之烷基，R2 表示碳數1~30之伸烷基，R3 表示碳數1~30之烷基。
本發明之接著劑組成物藉由含有經以上述通式(2)所表示之化合物表面處理之填料，可更加提高耐回焊性、連接可靠度及絕緣可靠度。
本發明之接著劑組成物，就提高接著劑組成物之耐熱性及薄膜形成性之觀點而言，可進一步含有重量平均分子量為10000以上之高分子成分。
就進一步提高接著劑組成物之貼附性或薄膜形成性之 觀點而言，較佳為上述高分子成分之重量平均分子量為30000以上，且玻璃轉移溫度為100℃以下。
本發明之接著劑組成物藉由進一步含有助焊活性劑，可提高助焊活性，去除連接部之金屬表面之氧化膜或雜質，以形成良好之金屬-金屬接合。
就可提高以預塗佈方式密封半導體晶片與配線電路基板間之空隙或複數之半導體晶片間之空隙時之作業性而言，本發明之接著劑組成物之形狀較佳為薄膜狀。
本發明另提供一種半導體裝置之製造方法，其係半導體晶片及配線電路基板各自的連接部互相電連接的半導體裝置、或複數的半導體晶片各自的連接部相互電連接的半導體裝置之製造方法，其具備使用上述之接著劑組成物密封連接部之步驟。
依據本發明之半導體裝置之製造方法，藉由使用上述接著劑組成物，可提高半導體裝置之耐回焊性、連接可靠度及絕緣可靠度。
上述連接部含有選自由金、銀、銅、鎳、錫及鉛所組成之群組之至少一種金屬時，可進一步提高連接部之導電性、導熱性、連接可靠度。
本發明另提供以上述半導體裝置之製造方法製得之半導體裝置。
本發明之半導體裝置由於係使用上述半導體裝置之製造方法所製作，故為耐回焊性、連接可靠度及絕緣可靠度相當優異者。
依據本發明，可提供一種耐回焊性、連接可靠度及絕緣可靠度優異之接著劑組成物、使用該接著劑組成物之半導體裝置之製造方法及半導體裝置。
以下，依據情況參照圖式對本發明之較佳實施形態加以詳細說明。又，圖中，相同或相當部分給予相同符號，且省略重複說明。又，上下左右等之位置關係只要無特別指明，則為基於圖中所示之位置關係者。另外，圖式之尺寸比例並非限於圖示之比例者。
〈接著劑組成物〉
本實施形態之接著劑組成物(半導體密封用接著劑)為於半導體晶片及配線電路基板(以下視情況亦簡稱為「基板」)各自的連接部互相電連接的半導體裝置、或複數的半導體晶片各自的連接部相互電連接的半導體裝置中密封連接部的接著劑組成物，該組成物含有環氧樹脂(以下視情況亦稱為「(a)成分」)、硬化劑(以下視情況亦稱為「(b)成分」)、與丙烯酸系表面處理之填料或具有以下述通式(1)所表示之基團之填料(以下視情況亦稱為「(c)成分」)。又，接著劑組成物可視需要含有重量平均分子量為10000以上之高分子成分(以下視情況 亦稱為「(d)成分」)或助焊活性劑(以下視情況亦稱為「(e)成分」)。以下針對構成本實施形態之接著劑組成物之各成分加以說明。
(a)成分：環氧樹脂
作為環氧樹脂，只要是分子內具有兩個以上之環氧基者即可無特別限制地使用。作為(a)成分，具體而言可使用雙酚A型、雙酚F型、萘型、苯酚酚醛清漆型、甲酚酚醛清漆型、苯酚芳烷基型、聯苯型、三苯基甲烷、二環戊二烯型及各種多官能基環氧樹脂。該等樹脂可單獨使用或以兩種以上之混合物使用。
(a)成分就抑制在高溫下連接時因分解而產生揮發成分之觀點而言，當連接時之溫度為250℃時，較佳為使用在250℃之熱重量減少量率為5%以下之環氧樹脂，當為300℃時，較佳為使用在300℃之熱重量減少量率為5%以下之環氧樹脂。
(b)成分：硬化劑
作為(b)成分，可列舉例如苯酚樹脂系硬化劑、酸酐系硬化劑、胺系硬化劑、咪唑系硬化劑及膦系硬化劑。當(b)成分包含酚羥基、酸酐、胺類或咪唑類時，會顯示出可抑制在連接部產生氧化膜之助焊活性，可提高連接可靠度．絕緣可靠度。以下針對各硬化劑加以說明。
(i)苯酚樹脂系硬化劑
作為苯酚樹脂系硬化劑，只要是分子內具有兩個以上酚羥基者即無特別限制，可使用例如苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚萘甲醛縮聚物、三苯基甲烷型多官能基苯酚及各種多官能基苯酚樹脂。該等樹脂可單獨使用或以兩種以上之混合物使用。
苯酚樹脂系硬化劑相對於上述(a)成分之當量比(酚羥基/環氧基，莫耳比)，就良好之硬化性、接著性及儲存安定性之觀點而言，較佳為0.3~1.5，更佳為0.4~1.0，又更佳為0.5~1.0。當量比為0.3以上時，有提高硬化性且提高接著力之傾向，為1.5以下時，未反應之酚羥基不會過量殘留，有將吸水率抑制為較低，而提高絕緣可靠度之傾向。
(ii)酸酐系硬化劑
作為酸酐系硬化劑，可使用例如甲基環己烷四羧酸二酐、偏苯三酸酐(trimellitic anhydride)、均苯四酸酐(pyromellitic anhydride)、二苯甲酮四羧酸二酐及乙二醇雙脫水偏苯三酸酯。該等化合物可單獨使用或以兩種以上之混合物使用。
酸酐系硬化劑相對於上述(a)成分之當量比(酸酐基/環氧基，莫耳比)，就良好之硬化性、接著性及儲存安定性之觀點而言，較佳為0.3~1.5，更佳為0.4~1.0，又更佳為0.5~1.0。當量比為0.3以上時，有提高硬化性且提高接著力之傾向，為1.5以下時，未反應之酸酐基不會過量殘留，有將吸水率抑制為較低，而提高絕緣可靠度之傾 向。
(iii)胺系硬化劑
作為胺系硬化劑，可使用例如二氰基二醯胺。
胺系硬化劑相對於上述(a)成分之當量比(胺/環氧基，莫耳比)，就良好之硬化性、接著性及儲存安定性之觀點而言，較佳為0.3~1.5，更佳為0.4~1.0，又更佳為0.5~1.0。當量比為0.3以上時，有提高硬化性且提高接著力之傾向，為1.5以下時，未反應之胺不會過量殘留，有提高絕緣可靠度之傾向。
(iv)咪唑系硬化劑
作為咪唑系硬化劑，可列舉例如2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑偏苯三酸酯、1-氰乙基-2-苯基咪唑鎓偏苯三酸鹽、2,4-二胺基-6-[2’-甲基咪唑啉-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-十一烷基咪唑啉-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑啉-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-甲基咪唑啉-(1’)]-乙基-s-三嗪異氰尿酸加成物、2-苯基咪唑異氰尿酸加成物、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、及環氧樹脂與咪唑類之加成物。該等化合物中，就優異之硬化性、儲存安定性及連接可靠度之觀點而言，較佳為1-氰乙基-2-十一烷基咪唑、1-氰基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑偏苯三酸酯、1-氰乙基-2-苯基咪唑鎓 偏苯三酸鹽、2,4-二胺基-6-[2’-甲基咪唑啉-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑啉-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-甲基咪唑啉-(1’)]-乙基-s-三嗪異氰尿酸加成物、2-苯基咪唑異氰尿酸加成物、2-苯基-4,5-二羥基甲基咪唑及2-苯基-4-甲基-5-羥基甲基咪唑。該等化合物可單獨使用或併用兩種以上。另外，亦可使用將該等化合物微膠囊化之潛在性硬化劑。
咪唑系硬化劑之含量，相對於(a)成分100質量份，較佳為0.1~20質量份，更佳為0.1~10質量份。咪唑系硬化劑之含量為0.1質量份以上時，有提高硬化性之傾向，為20質量份以下時，在形成金屬接合之前接著劑組成物不會硬化，有不易產生連接不良之傾向。
(v)膦系硬化劑
膦系硬化劑可列舉例如三苯基膦、四苯基鏻四苯基硼酸鹽、四苯基鏻四(4-甲基苯基)硼酸鹽及四苯基鏻(4-氟苯基)硼酸鹽。
膦系硬化劑之含量，相對於(a)成分100質量份，較佳為0.1~10質量份，更佳為0.1~5質量份。膦系硬化劑之含量為0.1質量份以上時，有提高硬化性之傾向，為10質量份以下時，在形成金屬接合之前接著劑組成物不會硬化，有不易產生連接不良之傾向。
苯酚樹脂系硬化劑、酸酐系硬化劑、及胺系硬化劑可分別單獨使用一種或以兩種以上之混合物使用。咪唑系硬化劑及膦系硬化劑可各別單獨使用，亦可與苯酚樹脂系硬 化劑、酸酐系硬化劑或胺系硬化劑一起使用。
當接著劑組成物含有苯酚樹脂系硬化劑、酸酐系硬化劑、或胺系硬化劑作為(b)成分時，會顯示出可去除硬化膜之助焊活性，可更加提高連接可靠度。
(c)成分：丙烯酸系表面處理填料或具有以上述通式(1)所表示之基團之填料
作為(c)成分，只要是經具有以上述通式(1)所表示之基團之化合物表面處理之填料則無特別限制，可使用例如使絕緣性無機填料、晶鬚、及樹脂填料經表面處理者。亦即，可使用具有以上述通式(1)所表示之基團之填料作為(c)成分。
此處，於式(1)中，R1 表示氫原子或碳數1或2之烷基，較佳為氫原子、甲基或乙基。R1 之碳數愈增加則體積愈大，當碳數超過2時會有反應性下降之傾向。R2 表示碳數1~30之伸烷基，較佳為碳數1~15之伸烷基。當R2 之碳數超過30時，會有難以對填料進行表面處理之傾向。
(c)成分於填料表面上是否具有以上述通式(1)所表示之基團，可例如藉由以下方法確認。
將本實施形態之接著劑組成物加熱，使用氣相層析儀(例如島津公司製造，製品名「GC-17A」)測定產生之甲醇。由該甲醇之量，可確認具有存在於填料表面之以上述通式(1)所表示之基團。於該情況下，同樣地測定不 含(C)成分之接著劑組成物之甲醇量作為參考。
作為絕緣性無機填料，可列舉例如玻璃、二氧化矽、氧化鋁、氧化鈦、碳黑、雲母、及氮化硼，較佳為二氧化矽、氧化鋁、氧化鈦及氮化硼，更佳為二氧化矽、氧化鋁及氮化硼。作為晶鬚，可列舉例如硼酸鋁、鈦酸鋁、氧化鋅、矽酸鈣、硫酸鎂、及氮化硼。作為樹脂填料，可列舉聚胺基甲酸酯、聚醯亞胺。該等填料及晶鬚可單獨使用或以兩種以上之混合物使用。填料之形狀、粒徑及調配量並無特別限制。亦可使用微細之奈米二氧化矽。於該等填料中，二氧化矽填料由於其表面處理之簡易性及與樹脂成分之相溶性較好，故為較佳。
作為(c)成分，可使用經以上述通式(2)所表示之化合物表面處理之填料。具體而言，可使用經式(2)中R1 為氫原子之丙烯酸系化合物表面處理之二氧化矽填料、經式(2)中R1 為甲基之甲基丙烯酸系化合物表面處理之二氧化矽填料、以及經式(2)中R1 為乙基之乙基丙烯酸系化合物表面處理之二氧化矽填料。就與半導體接著劑中所含樹脂成分或半導體基板表面之反應性或形成鍵結之觀點而言，上述式(2)中，R1 較佳為體積不大之基團，R1 為氫原子或碳數1或2之烷基，較佳為氫原子、甲基或乙基。R1 之碳數愈增加則體積愈大，當碳數超過2時會有反應性降低之傾向。亦即，可使用經丙烯酸系化合物、甲基丙烯酸系化合物或乙基丙烯酸系化合物表面處理之二氧化矽填料作為(c)成分。
上述通式(1)或(2)中，R2 表示碳數1~30之伸烷基，且就揮發成分較少之觀點而言較佳為碳數1~15之伸烷基。式(2)中，R3 表示碳數1~30之烷基，可依據表面處理之容易性而適當選擇。當R3 之碳數為30以下時，會有容易對填料進行表面處理之傾向。
(c)成分之形狀、粒徑只要依據接著劑組成物之用途適當設定即可，並無特別限制。
(c)成分之平均粒徑在填料形狀為球形時，平均粒徑較佳為2μm以下，於進一步窄間距化、窄間隙化之封裝中，為了避免因疊印(trapping)而造成之可靠度下降，較佳為1.5μm以下，特佳為1.0μm以下。又，其下限就操作性之觀點而言，較佳為0.005μm以上，特佳為0.01μm以下。
(c)成分之調配量以接著劑組成物之固體成分全部為基準，較佳為5~80質量%，更佳為10~70質量%。為5質量%以上時會有容易較強地發揮接著力提高之傾向，為80質量%以下時黏度容易調整，不易造成接著劑組成物之流動性下降或填料朝連接部之咬入(疊印)，有連接可靠度提高之傾向。
又，若矽烷偶合劑未預先與填料進行表面處理，而是作為接著劑組成物之構成成分添加，在系統中進行表面處理時，會產生甲醇等，而成為在高溫製程時產生氣泡的原因。
藉由提高接著劑組成物在260℃附近之吸濕後之接著 力，及提高在260℃附近之彈性率，可提高耐回焊性，防止回焊後之剝離或連接不良。
(d)成分：重量平均分子量10000以上之高分子成分
作為(d)成分，可列舉例如苯氧樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚碳二醯亞胺樹脂、氰酸酯樹脂、丙烯酸樹脂、聚酯樹脂、聚乙烯樹脂、聚醚碸樹脂、聚醚醯亞胺樹脂、聚乙烯縮醛樹脂、胺基甲酸酯樹脂及丙烯酸橡膠。該等物質中，就耐熱性及薄膜成形性優異之觀點而言，較佳為苯氧樹脂、聚醯亞胺樹脂、丙烯酸橡膠、氰酸酯樹脂及聚碳二醯亞胺樹脂，更佳為苯氧樹脂、聚醯亞胺樹脂及丙烯酸橡膠。該等之(d)成分可單獨使用或以兩種以上之混合物或共聚物使用。但，(d)成分不包含作為(a)成分的環氧樹脂。
上述苯氧樹脂、聚醯亞胺樹脂等高分子成分可使用市售品，亦可使用合成者。
聚醯亞胺樹脂可例如藉由習知方法使四羧酸二酐與二胺進行縮合反應而獲得。更具體而言，可在有機溶劑中混合等莫耳或大致等莫耳之四羧酸二酐及二胺(各成分之添加順序為任意)，並將反應溫度設定在80℃以下，較佳為0~60℃，以進行加成反應。又，為了抑制接著劑組成物之諸特性之降低，較佳為以乙酸酐對上述之四羧酸二酐進行再結晶純化處理。
隨著上述加成反應進行，反應液之黏度緩慢上升，生 成作為聚醯亞胺的前驅物之聚醯胺酸。聚醯亞胺樹脂可藉由使上述聚醯胺酸脫水閉環而獲得。脫水閉環可藉由加熱處理之熱閉環法，或使用脫水劑之化學閉環法來進行。上述聚醯胺酸可藉由在50~80℃下加熱解聚來調整其分子量。
作為聚醯亞胺樹脂之原料使用之四羧酸二酐並無特別限制，可列舉例如均苯四羧酸二酐、3,3’,4,4’-聯苯四羧酸二酐、2,2’,3,3’-聯苯四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、雙(2,3-二羧基苯基)甲烷二酐、雙(3,4-二羧基苯基)甲烷二酐、雙(3,4-二羧基苯基)碸二酐、3,4,9,10-苝四羧酸二酐、雙(3,4-二羧基苯基)醚二酐、苯-1,2,3,4-四羧酸二酐、3,4,3’,4’-二苯甲酮四羧酸二酐、2,3,2’,3’-二苯甲酮四羧酸二酐、3,3,3’,4’-二苯甲酮四羧酸二酐、1,2,5,6-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、2,3,6,7-萘四羧酸二酐、1,2,4,5-萘四羧酸二酐、2,6-二氯萘-1,4,5,8-四羧酸二酐、2,7-二氯萘-1,4,5,8-四羧酸二酐、2,3,6,7-四氯萘二-1,4,5,8-四羧酸二酐、菲-1,8,9,10-四羧酸二酐、吡嗪-2,3,5,6-四羧酸二酐、噻吩-2,3,5,6-四羧酸二酐、2,3,3’,4’-聯苯四羧酸二酐、3,4,3’,4’-聯苯四羧酸二酐、2,3,2’,3’-聯苯四羧酸二酐、雙(3,4-二羧基苯基)二甲基矽烷二酐、雙(3,4-二羧基苯基)甲基苯基矽烷二酐、雙(3,4-二羧基苯基)二苯基矽烷二酐、1,4-雙(3,4- 二羧基苯基二甲基矽烷基)苯二酐、1,3-雙(3,4-二羧基苯基)-1,1,3,3-四甲基二環己烷二酐、對-伸苯基雙(偏苯三酸酐)、伸乙基四羧酸二酐、1,2,3,4-丁烷四羧酸二酐、十氫萘-1,4,5,8-四羧酸二酐、4,8-二甲基-1,2,3,5,6,7-六氫萘-1,2,5,6-四羧酸二酐、環戊烷-1,2,3,4-四羧酸二酐、吡咯啶-2,3,4,5-四羧酸二酐、1,2,3,4-環丁烷四羧酸二酐、雙(外-雙環[2,2,1]庚烷-2,3-二羧酸二酐、雙環-[2,2,2]-辛-7-烯-2,3,5,6-四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙[4-(3,4-二羧基苯基)苯基]丙烷二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐、2,2-雙[4-(3,4-二羧基苯基)苯基]六丙烷二酐、4,4’-雙(3,4-二羧基苯氧基)二苯基硫醚二酐、1,4-雙(2-羥基六氟異丙基)苯雙(偏苯三酸酐)、1,3-雙(2-羥基六氟異丙基)苯雙(偏苯三酸酐)、5-(2,5-二酮基四氫呋喃基)-3-甲基-3-環己烷-1,2-二羧酸二酐、四氫呋喃-2,3,4,5-四羧酸二酐、以下述通式(I)所表示之四羧酸二酐、及以下述通式(II)所表示之四羧酸二酐。
式(I)中，a表示2~20之整數。
以上述通式(I)所表示之四羧酸二酐可由偏苯三酸酐單氯化物及對應之二元醇合成，具體而言，可列舉1,2-(伸乙基)雙(偏苯三酸酐)、1,3-(三亞甲基)雙(偏苯三酸酐)、1,4-(四亞甲基)雙(偏苯三酸酐)、1,5-(五亞甲基)雙(偏苯三酸酐)、1,6-(六亞甲基)雙(偏苯三酸酐)、1,7-(七亞甲基)雙(偏苯三酸酐)、1,8-(八亞甲基)雙(偏苯三酸酐)、1,9-(九亞甲基)雙(偏苯三酸酐)、1,10-(十亞甲基)雙(偏苯三酸酐)、1,12-(十二亞甲基)雙(偏苯三酸酐)、1,16-(十六亞甲基)雙(偏苯三酸酐)及1,18-(十八亞甲基)雙(偏苯三酸酐)。
作為四羧酸二酐，就可賦予優異之耐濕可靠度之觀點而言，較佳為以上述式(II)所表示之四羧酸二酐。上述四羧酸二酐可單獨使用或組合兩種以上使用。
以上述式(II)所表示之四羧酸二酐之含量相對於全部四羧酸二酐較佳為40莫耳%以上，更佳為50莫耳%以上，又更佳為70莫耳%以上。含量為40莫耳%以上時，有容易充分地確保藉由使用以上述式(II)所表示之羧酸 二酐所獲得之耐濕可靠度效果之傾向。
作為上述聚醯亞胺樹脂之原料所使用之二胺並無特別限制，可列舉例如鄰-苯二胺、間-苯二胺、對-苯二胺、3,3’-二胺基二苯基醚、3,4’-二胺基二苯基醚、4,4’-二胺基二苯基醚、3,3’-二胺基二苯基甲烷、3,4’-二胺基二苯基甲烷、4,4’-二胺基二苯基醚甲烷、雙(4-胺基-3,5-二甲基苯基)甲烷、雙(4-胺基-3,5-二異丙基苯基)甲烷、3,3’-二胺基二苯基二氟甲烷、3,4’-二胺基二苯基二氟甲烷、4,4’-二胺基二苯基二氟甲烷、3,3’-二胺基二苯基碸、3,4’-二胺基二苯基碸、4,4’-二胺基二苯基碸、3,3’-二胺基二苯基硫醚、3,4’-二胺基二苯基硫醚、4,4’-二胺基二苯基硫醚、3,3’-二胺基二苯基酮、3,4’-二胺基二苯基酮、4,4’-二胺基二苯基酮、2,2-雙(3-胺基苯基)丙烷、2,2’-(3,4’-二胺基二苯基)丙烷、2,2-雙(4-胺基苯基)丙烷、2,2-雙(3-胺基苯基)六氟丙烷、2,2-(3,4’-二胺基二苯基)六氟丙烷、2,2-雙(4-胺基苯基)六氟丙烷、1,3-雙(3-胺基苯氧基)苯、1,4-雙(3-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、3,3’-(1,4-伸苯基雙(1-甲基亞乙基))雙苯胺、3,4’-(1,4-伸苯基雙(1-甲基亞乙基))雙苯胺、4,4’-(1,4-伸苯基雙(1-甲基亞乙基))雙苯胺、2,2-雙(4-(3-胺基苯氧基)苯基)丙烷、2,2-雙(4-(3-胺基苯氧基)苯基)六氟丙烷、2,2-雙(4-(4-胺基苯氧基)苯基)六氟丙烷、雙(4-(3-胺基苯氧基)苯基)硫醚、雙(4-(4-胺基苯氧基)苯基)硫醚、雙(4-( 3-胺基苯氧基)苯基)碸、雙(4-(4-胺基苯氧基)苯基)碸、3,5-二胺基苯甲酸等芳香族二胺、1,3-雙(胺基甲基)環己烷、2,2-雙(4-胺基苯氧基苯基)丙烷、以下述通式(III)或(IV)所表示之脂肪族醚二胺、以下述通式(V)所表示之脂肪族二胺、及以下述通式(VI)所表示之矽氧烷二胺。
式(III)中，Q1 、Q2 及Q3 各自獨立表示碳數1~10之伸烷基，b表示1~80之整數。
式(IV)中，Q4 、Q5 、Q6 及Q7 各自獨立表示碳數1~10之伸烷基，c、d及e各自獨立表示1~50之整數。
式(V)中，f表示5~20之整數。
式(VI)中，Q8 及Q13 各自獨立表示碳數1~5之伸烷基或可具有取代基之伸苯基，Q9 、Q10 、Q11 及Q12 各自獨立表示碳數1~5之烷基、苯基或苯氧基，g表示1~5之整數。
該等化合物中，就可賦予低應力性、低溫層合性及低溫接著性之觀點而言，較佳為以上述通式(III)、(IV)或(V)所表示之二胺，就可賦予低吸水性及低吸濕性之觀點而言，較佳為以上述通式(VI)所表示之二胺。該等二胺可單獨使用或組合兩種以上使用。
以上述通式(III)或(IV)所表示之脂肪族醚二胺之含量較佳為全部二胺之1~50莫耳%，以上述通式(V)所表示之脂肪族二胺之含量較佳為全部二胺之20~80莫耳%，以上述通式(VI)所表示之矽氧烷二胺之含量較佳為全部二胺之20~80莫耳%。當在上述含量範圍內時，有低溫層合性及低吸水性之賦予效果變大之傾向。
又，作為以上述通式(III)所表示之脂肪族醚二胺，具體而言可列舉下述式(III-1)~(III-5)之脂肪族醚二胺。又，通式(III-4)及(III-5)中，n表示1以上之整數。
以上述通式(III-4)所表示之脂肪族醚二胺之重量平均分子量較佳為例如350、750、1100或2100。又，以上述通式(III-5)所表示之脂肪族醚二胺之重量平均分子量較佳為例如230、400或2000。
上述脂肪族醚二胺中，就可確保低溫層合性及對附有有機阻障之基板之良好接著性之觀點而言，較佳為分別以上述通式(IV)、下述通式(VII)、(VIII)或(IX)表示之脂肪族醚二胺。
式(VII)中，h表示2~80之整數，較佳為2~70。
式(VIII)中，c、d及e表示1~50之整數，較佳為2~40。
式(IX)中，j及k各自獨立表示1~70之整數。
作為以上述通式(VII)所表示之脂肪族醚二胺，具體而言可列舉Suntechno Chemical(股)所製造之Jeffamine D-230、D-400、D-2000及D-4000，BASF所製造之聚醚胺D-230、D-400及D-2000，作為以上述通式(VIII)所表示之脂肪族醚二胺，具體而言可列舉Suntechno Chemical(股)所製造之Jeffamine ED-600、ED-900、ED-2001，作為以上述式(IX)所表示之脂肪族醚二胺，可列舉Suntechno Chemical(股)所製造之Jeffamine EDR-148。
作為以上述通式(V)所表示之脂肪族二胺，可列舉例如1,2-二胺基乙烷、1,3-二胺基丙烷、1,4-二胺基丁烷、1,5-二胺基戊烷、1,6-二胺基己烷、1,7-二胺基庚烷、1,8-二胺基辛烷、1,9-二胺基壬烷、1,10-二胺基癸烷、1,11-二胺基十一烷、1,12-二胺基十二烷、及1,2-二胺基 環己烷。該等化合物中，較佳為1,9-二胺基壬烷、1,10-二胺基癸烷、1,11-二胺基十一烷、及1,12-二胺基十二烷。
作為以上述通式(VI)所表示之矽氧烷二胺，當通式(VI)中之g為1時，可列舉1,1,3,3-四甲基-1,3-雙(4-胺基苯基)二矽氧烷、1,1,3,3-四苯氧基-1,3-雙(4-胺基乙基)二矽氧烷、1,1,3,3-四苯基-1,3-雙(2-胺基乙基)二矽氧烷、1,1,3,3-四苯基-1,3-雙(3-胺基丙基)二矽氧烷、1,1,3,3-四甲基-1,3-雙(2-胺基乙基)二矽氧烷、1,1,3,3-四甲基-1,3-雙(3-胺基丙基)二矽氧烷、1,1,3,3-四甲基-1,3-雙(3-胺基丁基)二矽氧烷、及1,3-二甲基-1,3-二甲氧基-1,3-雙(4-胺基丁基)二矽氧烷。當g為2時，可列舉1,1,3,3,5,5-六甲基-1,5-雙(4-胺基苯基)三矽氧烷、1,1,5,5-四苯基-3,3-二甲基-1,5-雙(3-胺基丙基)三矽氧烷、1,1,5,5-四苯基-3,3-二甲氧基-1,5-雙(4-胺基丁基)三矽氧烷、1,1,5,5-四苯基-3,3-二甲氧基-1,5-雙(5-胺基戊基)三矽氧烷、1,1,5,5-四甲基-3,3-二甲氧基-1,5-雙(2-胺基乙基)三矽氧烷、1,1,5,5-四甲基-3,3-二甲氧基-1,5-雙(4-胺基丁基)三矽氧烷、1,1,5,5-四甲基-3,3-二甲氧基-1,5-雙(5-胺基戊基)三矽氧烷、1,1,3,3,5,5-六甲基-1,5-雙(3-胺基丙基)三矽氧烷、1,1,3,3,5,5-六乙基-1,5-雙(3-胺基丙基)三矽氧烷、及1,1,3,3,5,5-六丙基-1,5-雙(3-胺基丙基)三矽氧烷。
上述聚醯亞胺樹脂可單獨使用或以兩種以上之混合物使用。
(d)成分之玻璃轉移溫度(Tg)，就接著劑組成物對基板或晶片之貼附性優異之觀點而言，較佳為100℃以下，更佳為85℃以下。當Tg為100℃以下時，形成於半導體晶片上之凸塊、或形成於基板上之電極或配線圖型等凹凸部分可較容易地埋入接著劑組成物中，有不會殘留氣泡而不易產生孔洞的傾向。又，上述Tg係使用DSC(Perkin Elmer公司所製造之DSC-7型)，以樣品量10mg、升溫速度10℃/分鐘、測定氛圍：空氣之條件所測定之Tg。
(d)成分之重量平均分子量以聚苯乙烯換算為10000以上，但為能單獨地顯示良好之薄膜形成性，較佳為30000以上，更佳為40000以上，又更佳為50000以上。當重量平均分子量為10000以上時，有薄膜形成性及耐熱性提高之傾向。又，於本發明說明中，所謂重量平均分子量意指使用高速液相層析儀(例如，島津製作所製造，製品名「C-R4A」)，以聚苯乙烯換算所測定之重量平均分子量。
(d)成分之含量雖無特別限制，但為良好地保持薄膜狀，相對於(a)成分100質量份較佳為1~500質量份，更佳為5~300質量份，又更佳為10~200質量份。若(d)成分之含量為1質量份以上，會有容易獲得薄膜成形性之提高效果之傾向，若為500質量份以下時，會有提高接著劑組成物之硬化性，並提高接著力之傾向。
(e)成分：助焊活性劑
本發明之接著劑組成物中可含有(e)成分，亦即顯示助焊活性(去除氧化物或雜質之活性)之化合物之助焊活性劑。作為助焊活性劑，可列舉如咪唑類或胺類之具有非共用電子對之含氮化合物、羧酸類、苯酚類及醇類。
該等化合物中，由於羧酸類之助焊活性較強，可與(a)成分之環氧樹脂反應，而不會以游離狀態存在於接著劑組成物之硬化物中，故可防止絕緣可靠度之下降。
作為羧酸類，可列舉例如乙酸、丙酸、丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、十二烷酸、十四烷酸、十六烷酸、十七烷酸、十八烷酸等脂肪族飽和羧酸；油酸、亞油酸、亞麻酸、花生四烯酸、二十二碳六烯酸、二十碳五烯酸等脂肪族不飽和羧酸；馬來酸、富馬酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸等脂肪族二羧酸；苯甲酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、偏苯三酸、均苯三酸(trimesic acid)、連苯三酸(hemimellitic acid)、均苯四酸、戊烷羧酸、苯六甲酸(mellitic acid)等芳香族羧酸。又，作為具有羥基之羧酸，可列舉例如乳酸、蘋果酸、檸檬酸及水楊酸。
再者，亦可使用在上述芳香族羧酸上有拉電子性或供電子性之取代基，以利用取代基改變芳香族上之羧酸之酸度之芳香族羧酸。雖有羧酸之酸度愈高則愈能提高助焊活性之傾向，但酸度太高時會有絕緣可靠度降低之情況。作為可提高羧酸之酸度之拉電子性取代基，可列舉硝基、氰 基、三氟甲基、鹵基及苯基。作為可使羧酸之酸度變弱之供電子性取代基，可列舉甲基、乙基、異丙基、第三丁基、二甲基胺基及三甲基胺基。又，上述取代基之數量或位置只要不降低助焊活性或絕緣可靠度即無特別限制。
(其他成分)
本實施形態之接著劑組成物除(c)成分以外亦可調配其他填料以控制黏度或硬化物之物性，並抑制連接半導體晶片及基板時之孔洞產生或吸濕率上升。
作為填料，可使用絕緣性無機填料、晶鬚或樹脂填料。作為絕緣性無機填料、晶鬚或樹脂填料，可使用與上述(c)成分相同之物質。該等填料、晶鬚及樹脂填料可單獨使用一種或以兩種以上之混合物使用。填料之形狀、平均粒徑及含量並無特別限制。
再者，本實施形態之接著劑組成物中亦可調配抗氧化劑、矽烷偶合劑、鈦偶合劑、勻化劑、離子捕捉劑等添加劑。該等添加劑可單獨使用一種或組合兩種以上使用。該等添加劑之調配量只要以可展現各添加劑之效果的方式適當調整即可。
本實施形態之接著劑組成物可形成為薄膜狀。以下教示使用本實施形態之接著劑組成物之薄膜狀接著劑之製作方法。首先，將(a)成分、(b)成分及(c)成分、及視需要添加之(d)成分或(e)成分等加入有機溶劑中，藉由攪拌混合、混練等而溶解或分散，以調製樹脂漆料。 隨後，使用刮刀塗佈器、輥塗佈器或塗佈器將樹脂漆料塗佈於施以脫模處理之基材薄膜上，然後藉由加熱去除有機溶劑，藉此於基材薄膜上獲得薄膜狀接著劑。
作為樹脂漆料之調製中使用之有機溶劑，較佳為具有可使各成分均勻溶解或分散之特性者，可列舉例如二甲基甲醯胺、二甲基乙醯胺、N-甲基-2-吡咯烷酮、二甲基亞碸、二乙二醇二甲基醚、甲苯、苯、二甲苯、甲基乙基酮、四氫呋喃、乙基溶纖劑、乙基溶纖劑乙酸酯、丁基溶纖劑、二噁烷、環己酮、及乙酸乙酯。該等有機溶劑可單獨使用或組合兩種以上使用。樹脂漆料調製時之攪拌混合或混練可使用例如攪拌機、擂潰機、三軸輥、球磨機、珠粒研磨機及均質機來進行。
作為基材薄膜，只要是具有可承受有機溶劑揮發時之加熱條件之耐熱性者即無特別限制，可列舉聚丙烯薄膜、聚甲基戊烯薄膜等聚烯烴薄膜、聚對苯二甲酸乙二酯薄膜、聚萘二甲酸乙二酯薄膜等聚酯薄膜、聚醯亞胺薄膜及聚醚醯亞胺薄膜。基材薄膜並不限於由該等薄膜所形成之單層者，亦可為由兩種以上之材料所成之多層薄膜。
使有機溶劑自塗佈於基材薄膜之樹脂漆料揮發時之乾燥條件較佳為使有機溶劑充分揮發之條件，具體而言較佳為在50~200℃進行0.1~90分鐘之加熱。
又，本實施形態之接著劑組成物，就提高作業性之觀點而言，亦可以直接旋轉塗佈於晶圓上，並視需要乾燥後將晶圓單片化的方式來使用。
〈半導體裝置〉
針對本實施形態之半導體裝置，使用圖1及2說明如下。圖1為顯示本發明之半導體裝置之一實施形態之示意剖面圖。如圖1(a)所示，半導體裝置100具有相互對向之半導體晶片10及基板(電路配線基板)20、分別配置於半導體晶片10及基板20之相互對向之面上之配線15、使半導體晶片10及基板20之配線15相互連接之連接凸塊30、以及無間隙地填充半導體晶片10及基板20間之空隙之接著劑組成物40。半導體晶片10及基板20係藉由配線15及連接凸塊30以覆晶方式連接。配線15及連接凸塊30係利用接著劑組成物40密封而與外部環境隔離。
如圖1(b)所不，半導體裝置200具有相互對向之半導體晶片10及基板20、分別配置於半導體晶片10及基板20之相互對向之面上之凸塊32、以及無間隙地填充於半導體晶片10及基板20間之空隙之接著劑組成物40。半導體晶片10及基板20係藉由使對向之凸塊32相互連接而以覆晶方式連接。凸塊32係藉由接著劑組成物40密封而與外部環境隔離。
圖2為顯示本發明之半導體裝置之另一實施形態之示意剖面圖。如圖2(a)所示，半導體裝置300除了以配線15及連接凸塊30將兩片半導體晶片10以覆晶方式連接以外，其餘與半導體裝置100相同。如圖2(b)所示，半導體裝置400除了以凸塊32將兩片半導體晶片10以覆晶方 式連接以外，其餘與半導體裝置200相同。
作為半導體晶片10並無特別限制，可使用矽、鍺等之由同一種元素所構成之元素半導體，或砷化鎵、磷化銦等化合物半導體。
作為基板20，只要是電路基板則無特別限制，可使用於以玻璃環氧樹脂、聚醯亞胺、聚酯、陶瓷、環氧樹脂、雙馬來醯亞胺三嗪等作為主要成分之絕緣基板之表面上具有以蝕刻去除金屬膜之不需要部位所形成之配線(配線圖型)15之電路基板、於上述絕緣基板之表面上利用金屬鍍敷等形成配線15之電路基板、或於上述絕緣基板之表面上印刷導電性物質而形成配線15之電路基板。
配線15或凸塊32等之連接部含有金、銀、銅、焊料(主要成分為例如錫-銀、錫-鉛、錫-鉍、錫-銅、錫-銀-銅)、鎳、錫、鉛等作為主成分，且亦可含有複數種之金屬。
上述金屬中，就成為連接部之導電性．導熱性優異之密封之觀點而言，較佳為金、銀及銅，更佳為銀及銅。就成為減低成本之密封之觀點而言，基於價格便宜，較佳為銀、銅及焊料，更佳為銅及焊料，又更佳為焊料。由於在室溫下於金屬表面形成氧化膜時會有生產率下降或成本增加之情況，故就抑制氧化膜形成之觀點而言，較佳為金、銀、銅及焊料，更佳為金、銀、焊料，又更佳為金、銀。
上述配線15及凸塊32之表面上亦可藉由例如鍍敷而形成以金、銀、銅、焊料(主要成分為例如錫-銀、錫-鉛 、錫-鉍、錫-銅)、錫、鎳等作為主要成分之金屬層。該金屬層可僅以單一成分構成，亦可由複數種成分構成。又，上述金屬層可為單層或層合複數之金屬層而成之構造。
又，本實施形態之半導體裝置亦可複數層合如半導體裝置100~400所示之構造(密封)。於該情況下，半導體裝置100~400亦可以含有金、銀、銅、焊料(主要成分為例如錫-銀、錫-鉛、錫-鉍、錫-銅、錫-銀-銅)、錫、鎳等之凸塊或配線相互電性連接。
作為複數層合半導體裝置之方法，如圖3所示，可列舉例如TSV(穿矽通孔)技術。圖3為顯示本發明之半導體裝置之另一實施形態之示意剖面圖，其為使用TSV技術之半導體裝置。於圖3所示之半導體裝置500中，係藉由將形成於中介片(interposer)50上之配線15經由連接凸塊30與半導體晶片10之配線15連接，而使半導體晶片10與中介片50以覆晶方式連接。接著劑組成物40無間隙地填充於半導體晶片10與中介片50間之空隙中。於上述半導體晶片10中與中介片50呈相反側之表面上，以隔著配線15、連接凸塊30及接著劑組成物40的方式，重複層合半導體晶片10。半導體晶片10正反兩面上之圖型面之配線15係透過填充於貫穿半導體晶片10內部之孔內之貫穿電極34相互連接。又，貫穿電極34之材質可使用銅、鋁等。
藉由此種TSV技術，可自通常未使用之半導體晶片之反面亦取得信號。而且，由於半導體晶片10內之貫穿電 極34係垂直通過，故縮短對向之半導體晶片10之間或半導體晶片10與中介片50間之距離，且可柔軟地連接。本實施形態之接著劑組成物在此種TSV技術中，可用作為對向之半導體晶片10之間、或半導體晶片10與中介片50之間之半導體密封用接著劑。
又，藉由區域凸塊晶片技術等之自由度高之凸塊形成方法，可不透過中介片就此將半導體晶片直接安裝於主機板上。本實施形態之接著劑組成物亦可用於此種將半導體晶片直接安裝於主機板上之情況。又，本實施形態之接著劑組成物在層合兩片配線電路基板之情況下，亦可用於密封基板間之空隙。
〈半導體裝置之製造方法〉
針對本實施形態之半導體裝置之製造方法，使用圖4說明如下。圖4為示意性顯示本發明之半導體裝置之製造方法之一實施形態之步驟剖面圖。
首先，如圖4(a)所示，於具有配線15之基板20上，在形成連接凸塊30之位置形成具有開口之抗焊劑60。該抗焊劑60並不一定需要設置。然而，藉由於基材20上設置抗焊劑，可抑制配線15間之橋接發生，而提高連接可靠度．絕緣可靠度。抗焊劑60可使用例如市售之密封用抗焊劑用油墨來形成。作為市售之密封用抗焊劑用油墨，具體而言可列舉SR系列(日立化成工業股份有限公司製造，商品名)及PSR4000-AUS系列(太陽油墨製造( 股)製造，商品名)。
接著，如圖4(a)所示，於抗焊劑60之開口形成連接凸塊30。接著，如圖4(b)所示，於形成有連接凸塊30及抗焊劑60之基板20上貼附薄膜狀之接著劑組成物(以下，視情況稱為「薄膜狀接著劑」)40。薄膜狀接著劑40之貼附可藉由加熱壓製、輥層合、真空層合等方式進行。薄膜狀接著劑40之供給面積或厚度係依據半導體晶片10及基板20之尺寸，或依據連接凸塊30之高度而適當設定。
如以上所述將薄膜狀接著劑40貼附於基板20上之後，使用覆晶接合器等之連接裝置將半導體晶片10之配線15與連接凸塊30對準。接著，在連接凸塊30之熔點以上之溫度下加熱並壓著半導體晶片10與基板20，如圖4(c)所示，在連接半導體晶片10與基板20之同時，利用薄膜狀接著劑40密封填充半導體晶片10及基板20間之空隙。依照上述方法，製得半導體裝置600。
於本實施形態之半導體裝置之製造方法中，亦可在對準位置後先暫時固定(介隔半導體接著劑之狀態)，再以回焊爐進行加熱處理，藉此使連接凸塊30熔融而連接半導體晶片10與基板20。於暫時固定之階段由於不一定需要形成金屬接合，故相較於上述邊加熱邊壓著之方法，可藉由低荷重、短時間、低溫度進行壓著，可提升生產率同時抑制連接部之劣化。
又，使半導體晶片10與基板20連接後，亦可以烘箱 等進行加熱處理，進一步提高連接可靠度、絕緣可靠度。加熱溫度較佳為薄膜狀接著劑進行硬化之溫度，更佳為完全硬化之溫度。加熱溫度、加熱時間係適當設定。
於本實施形態之半導體裝置之製造方法中，亦可在將薄膜狀接著劑40貼附於半導體晶片10後連接基板20。又，亦可在經由配線15及連接凸塊30連接半導體晶片10及基板20後，於半導體晶片10及基板20間之空隙中填充糊狀之接著劑組成物。
就提高生產率之觀點而言，亦可將接著劑組成物供給至由複數之半導體晶片10連結而成之半導體晶圓之後，藉由切割單片化獲得於半導體晶片10上供給有接著劑組成物之構造體。又，於接著劑組成物為糊狀時，雖無特別限制，但只要藉由旋轉塗佈等塗佈方法埋填半導體晶片10上之配線或凸塊，使厚度均勻化即可。在該情況下，由於樹脂之供給量為固定，故可提高生產率，同時抑制因埋填不足而造成之孔洞發生及切割性降低。另一方面，於接著劑組成物為薄膜狀之情況，雖無特別限制，但只要藉由加熱壓製、輥層合及真空層合等貼附方式以將半導體晶片10上之配線或凸塊埋入之方式供給薄膜狀之樹脂組成物即可。在該情況下，由於樹脂之供給量為固定，故可提高生產率，並抑制因埋填不足而造成之孔洞發生及切割性降低。
連接荷重係考慮連接凸塊30之數量或高度之偏差、因加壓而造成之連接凸塊30、或承受連接部凸塊之配線的變形量而設定。連接溫度為使連接部之溫度為連接凸塊30 之熔點以上較佳，但為能形成個別連接部(凸塊或配線)之金屬接合的溫度即可。當連接凸塊30為焊料凸塊時，較佳為約240℃以上。
連接時之連接時間隨著連接部之構成金屬而異，但就提高生產率之觀點而言，時間愈短愈好。當連接凸塊30為焊料凸塊時，連接時間較佳為20秒以下，更佳為10秒以下，又更佳為5秒以下。當為銅-銅或銅-金之金屬連接時，連接時間較佳為60秒以下。
於上述各種密封構造之覆晶連接部中，本發明之接著劑組成物亦顯示出優異之耐回焊性、連接可靠度及絕緣可靠度。
實施例
以下使用實施例、比較例來說明本發明，但本發明並不受限於以下之實施例。
(聚醯亞胺之合成)
於具備溫度計、攪拌機及氯化鈣管之300mL燒瓶中饋入1,12-二胺基十二烷2.10g(0.035莫耳)、聚醚二胺(BASF製造，商品名「ED2000」)，分子量：1923)17.31g(0.03莫耳)、1,3-雙(3-胺基丙基)四甲基二矽氧烷(信越化學製造，商品名「LP-7100」)2.61g(0.035莫耳)、及N-甲基-2-吡咯烷酮(關東化學製造，以下稱為「NMP」)150g並經攪拌。在上述二胺溶解後，於冰浴 中使燒瓶冷卻，同時逐次少量地添加以乙酸酐再結晶純化之4,4’-(4,4’-亞異丙基二苯氧基)雙(苯二甲酸酐)(ALDRICH製造，商品名「BPADA」)15.62g(0.10莫耳)。在室溫下反應8小時後，添加二甲苯100g並吹入氮氣同時以180℃加熱，與水一起共沸去除二甲苯，以獲得聚醯亞胺樹脂。自所得到之聚醯亞胺樹脂去除溶劑(NMP)，以固體成分為50質量%的方式溶解於甲基乙基酮(MEK)中，以此作為「聚醯亞胺A」。聚醯亞胺A之Tg為30℃，重量平均分子量為50000，SP值(溶解度參數)為10.2。
各實施例及比較例中所使用之化合物如下。
(a)環氧樹脂
．含有三酚甲烷骨架之多官能基固態環氧樹脂(日本環氧樹脂股份有限公司製造，商品名「EP1032H60」，以下稱為「EP1032」)。
．雙酚F型液態環氧樹脂(日本環氧樹脂股份有限公司製造，商品名「YL983U」，以下稱為「YL983」)。
．柔軟性環氧樹脂(日本環氧樹脂股份有限公司製造，商品名「YL7175」，以下稱為「YL7175」)。
(b)硬化劑
．2-苯基-4.5-二羥基甲基咪唑(四國化成股份有限公司製造，商品名「2PHZ-PW」，以下稱為「2PHZ」)。
．2,4-二胺基-6-[2’-甲基咪唑啉-(1’)]-乙基-s-三嗪異氰尿酸加成物(四國化成股份有限公司製造，商品名「2MAOK-PW」，以下稱為「2MAOK」)。
(c)丙烯酸系表面處理填料或具有以上述通式(1)所表示之基團之填料
．甲基丙烯酸表面處理之二氧化矽填料(Admatechs股份有限公司製造，商品名「SE2050-SMJ」，平均粒徑0.5μm，以下稱為「SM二氧化矽」)。
．甲基丙烯酸表面處理之奈米二氧化矽填料(Admatechs股份有限公司製造，商品名「YA050C-SM」，以下稱為「SM奈米二氧化矽」)。
(c’)其他填料
．未處理之二氧化矽填料(Admatechs股份有限公司製造，商品名「SE2050」，平均粒徑0.5μm，以下稱為「未處理二氧化矽」)。
．胺基矽烷處理之二氧化矽填料(Admatechs股份有限公司製造，商品名「SE2050-SXJ」，平均粒徑0.5μm，以下稱為「SX二氧化矽」)。
．環氧矽烷處理之二氧化矽填料(Admatechs股份有限公司製造，商品名「SE2050-SEJ」，平均粒徑0.5μm，以下稱為「SE二氧化矽」)。
．苯基矽烷處理之二氧化矽填料(Admatechs股份有 限公司製造，商品名「SE2050-SPJ」，平均粒徑0.5μm，以下稱為「SP二氧化矽」)。
．苯基表面處理之奈米二氧化矽填料(Admatechs股份有限公司製造，商品名「YA050C-SP」，平均粒徑50nm，以下稱為「SP奈米二氧化矽」)。
．有機填料(1)(三菱縲縈製造，商品名「W5500」，以下稱為「W5500」)。
．有機填料(2)(ROHM&HASS(股)公司製造，商品名「EXL-2655」，蕊殼型有機微粒子，以下稱為「EXL2655」)。
(d)分子量10000以上之高分子成分
．苯氧樹脂(東都化成股份有限公司製造，商品名「ZX1356」，Tg：約71℃，Mw：約63000，以下稱為「ZX1356」)。
．如上述合成之聚醯亞胺A
(e)助焊活性劑(助焊劑)
．二酚酸(東京化成股份有限公司製造)
．己二酸(和光純藥工業股份有限公司製造)
〈半導體密封用薄膜狀接著劑之製作〉 (實施例1)
以使固體成分成為60質量%之方式饋入環氧樹脂( EP1032)100質量份、硬化劑(2PHZ)7.5質量份、填料(SM二氧化矽)175質量份、助焊活性劑(二酚酸)25質量份、以及MEK溶劑，添加與固體成分等量之直徑0.8mm之珠粒及直徑2.0mm之珠粒，以珠粒研磨機(日本FRITSCH股份有限公司，行星型微粉碎機「P-7」)攪拌30分鐘。接著，添加100質量份(換算固體成分)之聚醯亞胺A，再次以珠粒研磨機攪拌30分鐘後，過濾去除攪拌所使用之珠粒，獲得樹脂漆料。
以小型精密塗佈裝置(廉井精機製造)將所得到之樹脂漆料塗佈於基材薄膜(帝人杜邦薄膜股份有限公司製造，商品名「PUREX A53」)上，並在潔淨烘箱(ESPEC股份有限公司製造)中以70℃乾燥10分鐘，以製作薄膜狀接著劑。
(實施例2~3及比較例1~6)
除了將所使用之原材料組成依照下述之表1變更以外，其餘與實施例1同樣地進行，以製作實施例2~3及比較例1~6之薄膜狀接著劑。
以下教示於實施例及比較例中所獲得之薄膜狀接著劑之評價方法。
〈於260℃之彈性率之測定〉
將薄膜狀接著劑裁切成特定尺寸(長37mm×寬4mm×厚0.13mm)，並在潔淨烘箱(ESPEC股份有限公司製造 )中，於180℃保持3小時使之硬化。在硬化後，使用黏彈性測定裝置(Rheometrics製造，商品名「RASII」)測定於260℃之彈性率，260℃為耐回焊性評價時回焊爐之到達溫度。測定係在溫度範圍-30~270℃，升溫速度5℃/分鐘，測定波長10Hz下進行。
〈吸濕後之於260℃之接著力測定〉
將薄膜狀接著劑裁切成特定尺寸(長5mm×寬5mm×厚0.025mm)，並在60℃貼附於矽晶片(長5mm×寬5mm×厚0.725mm，氧化膜塗覆)，再使用熱壓著試驗機(日立化成科技股份有限公司製造)壓著於塗覆有抗焊劑(太陽油墨製造，商品名「AUS308」)之玻璃環氧基板(厚度0.02mm)上(壓著條件：薄膜狀接著劑之到達溫度180℃/10秒/0.5MPa；隨後，薄膜狀接著劑之到達溫度245℃/10秒/0.5MPa)。接著，在潔淨烘箱中(ESPEC股份有限公司製造)進行後硬化(180℃/3小時)。隨後，放置於85℃、相對濕度60%之恆溫恆濕器(ESPEC股份有限公司製造，商品名「PR-2KP」)中48小時，取出後，在260℃之加熱板上使用接著力測定裝置(DAGE公司製造，萬能型Bond Tester DAGE4000型)，以距離基板之工具高度0.05mm，工具速度0.05mm/秒之條件進行測定。
〈初期連接性之評價〉
將所製作之薄膜狀接著劑裁切成特定尺寸(長8mm× 寬8mm×厚0.025mm)，並貼附於玻璃環氧基板(玻璃環氧基材：420μm厚，銅配線：9μm厚，80μm間距)上，再以覆晶安裝裝置「FCB3」(Panasonic製造，商品名)安裝附有焊料凸塊之半導體晶片(晶片尺寸：長7mm×寬7mm×高0.15mm；凸塊：銅柱及焊料；80μm間距)(安裝條件：薄膜狀接著劑之到達溫度180℃、10秒鐘、0.5MPa；隨後，薄膜狀接著劑之到達溫度245℃、10秒鐘、0.5MPa)。藉此，與圖4同樣地，得到使上述玻璃環氧基板與附有焊料凸塊之半導體晶片菊鏈(daisy chain)連接之半導體裝置。
使用萬用電表(ADVANTEST製造，商品名「R6871E」)測定所得到之半導體裝置之連接電阻值，藉此評價安裝後可否初期導通。連接電阻值為11~14Ω時評價為連接性良好「A」，若為除此之外的連接電阻值時或產生連接不良(斷開)而無法表示電阻值時評價為「B」。
〈耐回焊性之評價〉
使用密封材料(日立化成工業股份有限公司製造，商品名「CEL9700HF10K」)，在180℃、6.75MPa、90秒之條件下將上述半導體裝置模製成特定形狀，並在潔淨烘箱(ESPEC股份有限公司製造)中，於175℃硬化5小時以製得封裝。接著，使該密封在JEDEC等級(level)2之條件下高溫吸濕後，使密封通過IR回焊爐(FURUKAWA ELECTRIC製造，商品名「SALAMANDER」)。以與後述 之初期連接性之評價相同之方法來評價回焊後之密封之連接性，以作為耐回焊性之評價。未剝離且連接良好之情況為「A」，產生剝離或連接不良而無法表示電阻值之情況為「B」。
〈連接可靠度之評價(耐TCT評價)〉
使用密封材料(日立化成工業股份有限公司製造，商品名「CEL9700HF10K」)，在180℃、6.75MPa、90秒之條件下將上述半導體裝置模製成特定形狀，並在潔淨烘箱(ESPEC股份有限公司製造)中，於175℃硬化5小時以製得封裝。接著，將該密封放入冷熱循環試驗機(ETAC製造，熱衝擊腔室NT1200)內，並通入1mA之電流，以25℃ 2分鐘/-55℃ 15分鐘/25℃ 2分鐘/125℃ 15分鐘/25℃ 2分鐘作為一個循環來測定連接電阻，評價重複1000次循環後之連接電阻之變化。與初期之電阻值波形比較，經1000次循環後亦無太大變化之情況為「A」，產生1Ω以上差值時為「B」。
〈絕緣可靠度之評價(耐HAST評價)〉
將所製作之薄膜狀接著劑裁切成特定尺寸(長10mm×寬5mm×厚25μm)，並貼附至於聚醯亞胺基板上形成配線銅配線之梳型電極基板(配線間距：0.05mm)上，如圖5所示地，製作於形成有梳型電極90之基板20上層合薄膜狀接著劑40之樣品。又，於圖5中，為方便起見而省略 薄膜狀接著劑之圖示。接著，將樣品置於潔淨烘箱(ESPEC股份有限公司製造)中，在185℃保持3小時使之硬化。於硬化後，取出各樣品，置於加速壽命試驗裝置(HIRAYAMA公司製造，商品名「PL-422R8」，條件：130℃/相對濕度85%/200小時/施加電壓5V)中，測定絕緣電阻。經過200小時後，絕緣電阻為108 Ω以上時評價為「A」。未達108 Ω時評價為「B」。
各實施例及比較例之接著劑組成物之原材料組成(單位：質量份)示於表1，各試驗之結果示於表2。
已確認使用丙烯酸系表面處理填料之實施例1~3吸濕後在260℃之接著力較高，耐回焊性、耐TCT性及耐HAST性皆優異。
10‧‧‧半導體晶片
15‧‧‧配線(連接部)
20‧‧‧基板(配線電路基板)
30‧‧‧連接凸塊
32‧‧‧凸塊(連接部)
34‧‧‧貫穿電極
40‧‧‧接著劑組成物(薄膜狀接著劑)
50‧‧‧中介片
60‧‧‧抗焊劑
90‧‧‧梳型電極
100、200、300、400、500、600‧‧‧半導體裝置
圖1為顯示本發明之半導體裝置之一實施形態之示意剖面圖。
圖2為顯示本發明之半導體裝置之另一實施形態之示意剖面圖。
圖3為顯示本發明之半導體裝置之另一實施形態之示意剖面圖。
圖4為示意性顯示本發明之半導體裝置之製造方法之一實施形態之步驟剖面圖。
圖5為顯示絕緣可靠度試驗用之樣品外觀之示意圖。

Claims (7)

  1. 一種接著劑組成物，其係於半導體晶片及配線電路基板各自的連接部互相電連接的半導體裝置、或複數的半導體晶片各自的連接部互相電連接的半導體裝置中密封前述連接部的接著劑組成物，其中該接著劑組成物含有環氧樹脂、硬化劑、經具有以下述通式(1)所表示之基團的化合物表面處理之丙烯酸系表面處理填料、以及重量平均分子量為10000以上之高分子成分； [式(1)中，R1 表示氫原子或碳數1或2之烷基，R2 表示碳數1~30之伸烷基]。
  2. 如申請專利範圍第1項之接著劑組成物，其中前述化合物為以下述通式(2)所表示之化合物； [式(2)中，R1 表示氫原子或碳數1或2之烷基，R2 表示碳數1~30之伸烷基，R3 表示碳數1~30之烷基]。
  3. 一種接著劑組成物，其係於半導體晶片及配線電路 基板各自的連接部互相電連接的半導體裝置、或複數的半導體晶片各自的連接部互相電連接的半導體裝置中密封前述連接部的接著劑組成物，其中該接著劑組成物含有環氧樹脂、硬化劑、具有以下述通式(1)所表示之基團的填料、以及重量平均分子量為10000以上之高分子成分； [式(1)中，R1 表示氫原子或碳數1或2之烷基，R2 表示碳數1~30之伸烷基]。
  4. 如申請專利範圍第1至3項中任一項之接著劑組成物，其中前述高分子成分之重量平均分子量為30000以上、玻璃轉移溫度為100℃以下。
  5. 如申請專利範圍第1至3項中任一項之接著劑組成物，其形狀係薄膜狀。
  6. 一種半導體裝置之製造方法，其係半導體晶片及配線電路基板各自的連接部互相電連接的半導體裝置、或複數的半導體晶片各自的連接部互相電連接的半導體裝置之製造方法，該製造方法具備使用如申請專利範圍第1至5項中任一項之接著劑組成物，將前述連接部密封之步驟。
  7. 如申請專利範圍第6項之製造方法，其中前述連接 部係含有由金、銀、銅、鎳、錫及鉛所成之群組中選出之至少一種金屬作為主要成分。
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Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101728203B1 (ko) * 2010-09-30 2017-04-18 히타치가세이가부시끼가이샤 접착제 조성물, 반도체 장치의 제조 방법 및 반도체 장치
JP2013221121A (ja) * 2012-04-18 2013-10-28 Mitsubishi Chemicals Corp 三次元積層型半導体装置用の層間充填剤組成物塗布液
JP2013221122A (ja) * 2012-04-18 2013-10-28 Mitsubishi Chemicals Corp 三次元積層型半導体装置用の層間充填剤組成物およびその塗布液
SG11201406941TA (en) * 2012-04-26 2014-11-27 Furukawa Electric Co Ltd Film adhesive composition, method for producing the same, film adhesive, semiconductor package using the film adhesive, and method for manufacturing the semiconductor package
JP6065495B2 (ja) * 2012-09-25 2017-01-25 東レ株式会社 電子部品およびパワー半導体装置
TWI554530B (zh) * 2012-10-08 2016-10-21 國立臺灣大學 聚合物以及透過該聚合物製備之膠態電解質及其製備方法
US9738763B2 (en) 2013-06-13 2017-08-22 Toray Industries, Inc. Resin composition, resin sheet, and production method for semiconductor device
JP6368990B2 (ja) * 2013-06-26 2018-08-08 日本ゼオン株式会社 光学用粘着性組成物の粒子混合物、光学用粘着性組成物、及び、光学用粘着層の製造方法
JP2015030745A (ja) * 2013-07-31 2015-02-16 住友ベークライト株式会社 樹脂組成物、半導体装置、多層回路基板および電子部品
JP2015129247A (ja) * 2014-01-09 2015-07-16 住友ベークライト株式会社 樹脂組成物、接着フィルム、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、ダイシングテープ兼バックグラインドテープ一体型接着シート、および、電子装置
WO2015193684A1 (en) * 2014-06-19 2015-12-23 Alpha Metals, Inc. Engineered residue solder paste technology
JP6555277B2 (ja) * 2014-12-05 2019-08-07 日立化成株式会社 半導体用接着剤、並びに、半導体装置及びその製造方法
CN105081614B (zh) * 2015-09-07 2017-08-04 东莞市富默克化工有限公司 一种osp预浸剂
SG11201809734RA (en) * 2016-05-09 2018-12-28 Hitachi Chemical Co Ltd Method for manufacturing semiconductor device
KR102538175B1 (ko) 2016-06-20 2023-06-01 삼성전자주식회사 반도체 패키지
JP2017038081A (ja) * 2016-10-27 2017-02-16 住友ベークライト株式会社 半導体装置
WO2018105125A1 (ja) * 2016-12-09 2018-06-14 日立化成株式会社 組成物、接着剤、焼結体、接合体及び接合体の製造方法
KR102290957B1 (ko) * 2017-03-31 2021-08-20 주식회사 엘지에너지솔루션 이차전지용 바인더 조성물, 이를 포함하는 이차전지용 전극 및 리튬 이차전지
KR102491834B1 (ko) * 2017-06-21 2023-01-25 쇼와덴코머티리얼즈가부시끼가이샤 반도체용 접착제, 반도체 장치의 제조 방법 및 반도체 장치
CN111372994B (zh) * 2017-11-27 2023-03-14 纳美仕有限公司 膜状半导体密封材料
KR102629861B1 (ko) * 2018-10-02 2024-01-29 가부시끼가이샤 레조낙 반도체용 접착제, 반도체 장치의 제조 방법 및 반도체 장치
WO2022120715A1 (zh) * 2020-12-10 2022-06-16 深圳先进技术研究院 一种绝缘胶膜材料及其制备方法和应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005068258A (ja) * 2003-08-22 2005-03-17 Denki Kagaku Kogyo Kk 球状アルミナ粉末及びその用途
JP2008085264A (ja) * 2006-09-29 2008-04-10 Sumitomo Bakelite Co Ltd 半導体装置
CN101356643A (zh) * 2006-09-13 2009-01-28 住友电木株式会社 半导体器件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005325210A (ja) * 2004-05-13 2005-11-24 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物およびそれを用いた半導体装置
JP2006193666A (ja) * 2005-01-14 2006-07-27 Sumitomo Bakelite Co Ltd 半導体用接着フィルム、半導体用接着フィルム付きキャリア材料および半導体装置
CN101794638B (zh) * 2006-07-21 2012-06-06 日立化成工业株式会社 电路连接材料、电路部件的连接结构及电路部件的连接方法
JP2008174624A (ja) * 2007-01-17 2008-07-31 Admatechs Co Ltd 表面処理無機粉体
JP5309886B2 (ja) * 2007-10-22 2013-10-09 日立化成株式会社 半導体封止用フィルム状接着剤、半導体装置の製造方法及び半導体装置
KR101728203B1 (ko) * 2010-09-30 2017-04-18 히타치가세이가부시끼가이샤 접착제 조성물, 반도체 장치의 제조 방법 및 반도체 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005068258A (ja) * 2003-08-22 2005-03-17 Denki Kagaku Kogyo Kk 球状アルミナ粉末及びその用途
CN101356643A (zh) * 2006-09-13 2009-01-28 住友电木株式会社 半导体器件
JP2008085264A (ja) * 2006-09-29 2008-04-10 Sumitomo Bakelite Co Ltd 半導体装置

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