TWI416996B - 包含用於減少聚合物沈積之射頻吸收材料的電漿限制環 - Google Patents
包含用於減少聚合物沈積之射頻吸收材料的電漿限制環 Download PDFInfo
- Publication number
- TWI416996B TWI416996B TW95122138A TW95122138A TWI416996B TW I416996 B TWI416996 B TW I416996B TW 95122138 A TW95122138 A TW 95122138A TW 95122138 A TW95122138 A TW 95122138A TW I416996 B TWI416996 B TW I416996B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- ring
- plasma confinement
- assembly
- confinement ring
- Prior art date
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 46
- 230000008021 deposition Effects 0.000 title claims abstract description 28
- 239000011358 absorbing material Substances 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 109
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229920001971 elastomer Polymers 0.000 claims description 5
- 239000000806 elastomer Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 2
- 230000013011 mating Effects 0.000 claims 3
- 230000000149 penetrating effect Effects 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 22
- 238000009832 plasma treatment Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013536 elastomeric material Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Coating By Spraying Or Casting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/155,493 US7713379B2 (en) | 2005-06-20 | 2005-06-20 | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200708207A TW200708207A (en) | 2007-02-16 |
| TWI416996B true TWI416996B (zh) | 2013-11-21 |
Family
ID=37572195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95122138A TWI416996B (zh) | 2005-06-20 | 2006-06-20 | 包含用於減少聚合物沈積之射頻吸收材料的電漿限制環 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US7713379B2 (enExample) |
| JP (2) | JP5492411B2 (enExample) |
| KR (2) | KR20080025690A (enExample) |
| CN (1) | CN101553900B (enExample) |
| MY (1) | MY164564A (enExample) |
| TW (1) | TWI416996B (enExample) |
| WO (1) | WO2007001865A2 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
| US7713379B2 (en) | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
| US20070125646A1 (en) * | 2005-11-25 | 2007-06-07 | Applied Materials, Inc. | Sputtering target for titanium sputtering chamber |
| US7740736B2 (en) * | 2006-06-08 | 2010-06-22 | Lam Research Corporation | Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber |
| JP5194125B2 (ja) | 2007-09-25 | 2013-05-08 | ラム リサーチ コーポレーション | シャワーヘッド電極アセンブリ用の温度制御モジュール、シャワーヘッド電極アセンブリ及びシャワーヘッド電極アセンブリの上部電極の温度を制御する方法 |
| US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
| US8221582B2 (en) | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
| WO2010005932A2 (en) * | 2008-07-07 | 2010-01-14 | Lam Research Corporation | Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber |
| US8206506B2 (en) | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
| US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
| US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
| US8402918B2 (en) | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
| US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
| KR102219924B1 (ko) * | 2009-08-31 | 2021-02-23 | 램 리써치 코포레이션 | 무선 주파수 (ｒｆ) 접지 복귀 장치들 |
| TWM412457U (en) | 2009-09-18 | 2011-09-21 | Lam Res Corp | Showerhead electrode for use in a plasma reaction chamber and showerhead electrode assembly |
| JP3160877U (ja) | 2009-10-13 | 2010-07-15 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極 |
| WO2011149615A2 (en) * | 2010-05-24 | 2011-12-01 | Applied Materials, Inc. | Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus |
| CN103081085A (zh) * | 2010-08-06 | 2013-05-01 | 旭硝子株式会社 | 支撑基板 |
| US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
| US9076826B2 (en) | 2010-09-24 | 2015-07-07 | Lam Research Corporation | Plasma confinement ring assembly for plasma processing chambers |
| CN102394255A (zh) * | 2011-11-15 | 2012-03-28 | 苏州思博露光伏能源科技有限公司 | 在柔性薄膜光伏电池制造中喷淋电极同时沉积薄膜的技术 |
| CN104508180A (zh) * | 2012-07-27 | 2015-04-08 | 应用材料公司 | 粗糙化的基板支撑件 |
| US10727092B2 (en) * | 2012-10-17 | 2020-07-28 | Applied Materials, Inc. | Heated substrate support ring |
| US11127619B2 (en) * | 2016-06-07 | 2021-09-21 | Applied Materials, Inc. | Workpiece carrier for high power with enhanced edge sealing |
| KR200491165Y1 (ko) | 2017-04-14 | 2020-05-15 | 주식회사 월덱스 | 플라즈마 에칭장치용 이체형 한정 링 |
| CN112713075B (zh) * | 2019-10-25 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 等离子体隔离环、等离子体处理装置与基片处理方法 |
| CN112802729B (zh) * | 2019-11-13 | 2024-05-10 | 中微半导体设备(上海)股份有限公司 | 带温度维持装置的隔离环 |
| CN112928007B (zh) * | 2019-12-06 | 2023-09-12 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备及用于等离子体处理设备的下电极组件 |
| JP7657802B2 (ja) * | 2019-12-19 | 2025-04-07 | ラム リサーチ コーポレーション | 消耗チャンバ部品におけるカプセル化ｒｆｉｄ |
| CN113745081B (zh) * | 2020-05-27 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种隔离环组件、等离子体处理装置及处理方法 |
| CN114649178A (zh) * | 2020-12-18 | 2022-06-21 | 中微半导体设备(上海)股份有限公司 | 一种下电极组件及等离子体处理装置 |
| KR102326741B1 (ko) * | 2021-08-18 | 2021-11-16 | 주식회사 린텍 | 실리콘 파우더와 고주파 가열장치를 이용한 실리콘 부품의 접합 방법 |
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| JPH0778802A (ja) * | 1993-05-24 | 1995-03-20 | Tokyo Electron Ltd | ドライクリーニング方法 |
| US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
| US20030084999A1 (en) * | 2001-11-05 | 2003-05-08 | Tokyo Electron Limited | Apparatus and method for mitigating chamber resonances in plasma processing |
| TW200302035A (en) * | 2001-12-13 | 2003-07-16 | Tokyo Electron Ltd | Ring mechanism, and plasma processing device using the ring mechanism |
| CN1197131C (zh) * | 1995-07-10 | 2005-04-13 | 兰姆研究有限公司 | 利用等离子体约束装置的等离子体蚀刻装置 |
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| JP2006303309A (ja) * | 2005-04-22 | 2006-11-02 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| KR100621778B1 (ko) * | 2005-06-17 | 2006-09-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US7713379B2 (en) | 2005-06-20 | 2010-05-11 | Lam Research Corporation | Plasma confinement rings including RF absorbing material for reducing polymer deposition |
| US7718045B2 (en) * | 2006-06-27 | 2010-05-18 | Applied Materials, Inc. | Ground shield with reentrant feature |
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2005
- 2005-06-20 US US11/155,493 patent/US7713379B2/en not_active Expired - Fee Related
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2006
- 2006-06-14 CN CN2006800220626A patent/CN101553900B/zh not_active Expired - Fee Related
- 2006-06-14 JP JP2008517075A patent/JP5492411B2/ja not_active Expired - Fee Related
- 2006-06-14 KR KR1020077029805A patent/KR20080025690A/ko not_active Ceased
- 2006-06-14 WO PCT/US2006/023198 patent/WO2007001865A2/en not_active Ceased
- 2006-06-14 KR KR1020137001853A patent/KR101468340B1/ko not_active Expired - Fee Related
- 2006-06-19 MY MYPI20062899A patent/MY164564A/en unknown
- 2006-06-20 TW TW95122138A patent/TWI416996B/zh not_active IP Right Cessation
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2010
- 2010-03-24 US US12/730,588 patent/US8337662B2/en not_active Expired - Fee Related
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2011
- 2011-12-08 JP JP2011269370A patent/JP5220178B2/ja not_active Expired - Fee Related
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| JPH0778802A (ja) * | 1993-05-24 | 1995-03-20 | Tokyo Electron Ltd | ドライクリーニング方法 |
| CN1197131C (zh) * | 1995-07-10 | 2005-04-13 | 兰姆研究有限公司 | 利用等离子体约束装置的等离子体蚀刻装置 |
| US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
| US20030084999A1 (en) * | 2001-11-05 | 2003-05-08 | Tokyo Electron Limited | Apparatus and method for mitigating chamber resonances in plasma processing |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2007001865A2 (en) | 2007-01-04 |
| WO2007001865A3 (en) | 2009-06-18 |
| US20130095666A1 (en) | 2013-04-18 |
| KR20080025690A (ko) | 2008-03-21 |
| CN101553900A (zh) | 2009-10-07 |
| US8337662B2 (en) | 2012-12-25 |
| CN101553900B (zh) | 2011-08-17 |
| JP5220178B2 (ja) | 2013-06-26 |
| JP2009500812A (ja) | 2009-01-08 |
| JP5492411B2 (ja) | 2014-05-14 |
| KR101468340B1 (ko) | 2014-12-03 |
| US20100178774A1 (en) | 2010-07-15 |
| MY164564A (en) | 2018-01-15 |
| US20060283552A1 (en) | 2006-12-21 |
| JP2012099829A (ja) | 2012-05-24 |
| US7713379B2 (en) | 2010-05-11 |
| US9123650B2 (en) | 2015-09-01 |
| KR20130023372A (ko) | 2013-03-07 |
| TW200708207A (en) | 2007-02-16 |
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