CN101553900B - 包括用于减少聚合物沉积的rf吸收材料的等离子体限制环 - Google Patents

包括用于减少聚合物沉积的rf吸收材料的等离子体限制环 Download PDF

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Publication number
CN101553900B
CN101553900B CN2006800220626A CN200680022062A CN101553900B CN 101553900 B CN101553900 B CN 101553900B CN 2006800220626 A CN2006800220626 A CN 2006800220626A CN 200680022062 A CN200680022062 A CN 200680022062A CN 101553900 B CN101553900 B CN 101553900B
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plasma
confinement rings
plasma confinement
consumable material
rings
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Expired - Fee Related
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CN2006800220626A
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English (en)
Chinese (zh)
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CN101553900A (zh
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詹姆斯·H·罗杰斯
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
CN2006800220626A 2005-06-20 2006-06-14 包括用于减少聚合物沉积的rf吸收材料的等离子体限制环 Expired - Fee Related CN101553900B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/155,493 2005-06-20
US11/155,493 US7713379B2 (en) 2005-06-20 2005-06-20 Plasma confinement rings including RF absorbing material for reducing polymer deposition
PCT/US2006/023198 WO2007001865A2 (en) 2005-06-20 2006-06-14 Plasma confinement rings including rf absorbing material for reducing polymer deposition

Publications (2)

Publication Number Publication Date
CN101553900A CN101553900A (zh) 2009-10-07
CN101553900B true CN101553900B (zh) 2011-08-17

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CN2006800220626A Expired - Fee Related CN101553900B (zh) 2005-06-20 2006-06-14 包括用于减少聚合物沉积的rf吸收材料的等离子体限制环

Country Status (7)

Country Link
US (3) US7713379B2 (enExample)
JP (2) JP5492411B2 (enExample)
KR (2) KR20080025690A (enExample)
CN (1) CN101553900B (enExample)
MY (1) MY164564A (enExample)
TW (1) TWI416996B (enExample)
WO (1) WO2007001865A2 (enExample)

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CN102394255A (zh) * 2011-11-15 2012-03-28 苏州思博露光伏能源科技有限公司 在柔性薄膜光伏电池制造中喷淋电极同时沉积薄膜的技术
KR102101192B1 (ko) * 2012-07-27 2020-04-21 어플라이드 머티어리얼스, 인코포레이티드 조면화된 기판 지지부
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US11127619B2 (en) * 2016-06-07 2021-09-21 Applied Materials, Inc. Workpiece carrier for high power with enhanced edge sealing
KR200491165Y1 (ko) 2017-04-14 2020-05-15 주식회사 월덱스 플라즈마 에칭장치용 이체형 한정 링
CN112713075B (zh) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体隔离环、等离子体处理装置与基片处理方法
CN112802729B (zh) * 2019-11-13 2024-05-10 中微半导体设备(上海)股份有限公司 带温度维持装置的隔离环
CN112928007B (zh) * 2019-12-06 2023-09-12 中微半导体设备(上海)股份有限公司 等离子体处理设备及用于等离子体处理设备的下电极组件
CN114830317A (zh) * 2019-12-19 2022-07-29 朗姆研究公司 消耗性室部件中的封装式射频识别
CN113745081B (zh) * 2020-05-27 2024-03-12 中微半导体设备(上海)股份有限公司 一种隔离环组件、等离子体处理装置及处理方法
CN114649178A (zh) * 2020-12-18 2022-06-21 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
KR102326741B1 (ko) * 2021-08-18 2021-11-16 주식회사 린텍 실리콘 파우더와 고주파 가열장치를 이용한 실리콘 부품의 접합 방법

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Also Published As

Publication number Publication date
WO2007001865A3 (en) 2009-06-18
KR20080025690A (ko) 2008-03-21
TW200708207A (en) 2007-02-16
CN101553900A (zh) 2009-10-07
JP5492411B2 (ja) 2014-05-14
JP2009500812A (ja) 2009-01-08
US20100178774A1 (en) 2010-07-15
KR20130023372A (ko) 2013-03-07
US20130095666A1 (en) 2013-04-18
JP5220178B2 (ja) 2013-06-26
US7713379B2 (en) 2010-05-11
JP2012099829A (ja) 2012-05-24
TWI416996B (zh) 2013-11-21
MY164564A (en) 2018-01-15
US20060283552A1 (en) 2006-12-21
US8337662B2 (en) 2012-12-25
US9123650B2 (en) 2015-09-01
WO2007001865A2 (en) 2007-01-04
KR101468340B1 (ko) 2014-12-03

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