KR20080025690A - 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링 - Google Patents

폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링 Download PDF

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Publication number
KR20080025690A
KR20080025690A KR1020077029805A KR20077029805A KR20080025690A KR 20080025690 A KR20080025690 A KR 20080025690A KR 1020077029805 A KR1020077029805 A KR 1020077029805A KR 20077029805 A KR20077029805 A KR 20077029805A KR 20080025690 A KR20080025690 A KR 20080025690A
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South Korea
Prior art keywords
plasma
ring
plasma confinement
processing chamber
loss material
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Ceased
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KR1020077029805A
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English (en)
Korean (ko)
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제임스 에이치 로저스
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램 리써치 코포레이션
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Publication of KR20080025690A publication Critical patent/KR20080025690A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
KR1020077029805A 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링 Ceased KR20080025690A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/155,493 2005-06-20
US11/155,493 US7713379B2 (en) 2005-06-20 2005-06-20 Plasma confinement rings including RF absorbing material for reducing polymer deposition

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137001853A Division KR101468340B1 (ko) 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는 플라즈마 한정링

Publications (1)

Publication Number Publication Date
KR20080025690A true KR20080025690A (ko) 2008-03-21

Family

ID=37572195

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020077029805A Ceased KR20080025690A (ko) 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링
KR1020137001853A Expired - Fee Related KR101468340B1 (ko) 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는 플라즈마 한정링

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137001853A Expired - Fee Related KR101468340B1 (ko) 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는 플라즈마 한정링

Country Status (7)

Country Link
US (3) US7713379B2 (enExample)
JP (2) JP5492411B2 (enExample)
KR (2) KR20080025690A (enExample)
CN (1) CN101553900B (enExample)
MY (1) MY164564A (enExample)
TW (1) TWI416996B (enExample)
WO (1) WO2007001865A2 (enExample)

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KR20110039250A (ko) * 2008-07-07 2011-04-15 램 리써치 코포레이션 플라즈마 처리 챔버에 사용하기 위한 진공 갭을 포함하는 플라즈마 대향 프로브 장치
WO2011149615A3 (en) * 2010-05-24 2012-02-02 Applied Materials, Inc. Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus
KR20190101509A (ko) * 2009-08-31 2019-08-30 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들

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US7713379B2 (en) 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
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US8221582B2 (en) 2008-07-07 2012-07-17 Lam Research Corporation Clamped monolithic showerhead electrode
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
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JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
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US9076826B2 (en) 2010-09-24 2015-07-07 Lam Research Corporation Plasma confinement ring assembly for plasma processing chambers
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KR102101192B1 (ko) * 2012-07-27 2020-04-21 어플라이드 머티어리얼스, 인코포레이티드 조면화된 기판 지지부
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US11127619B2 (en) * 2016-06-07 2021-09-21 Applied Materials, Inc. Workpiece carrier for high power with enhanced edge sealing
KR200491165Y1 (ko) 2017-04-14 2020-05-15 주식회사 월덱스 플라즈마 에칭장치용 이체형 한정 링
CN112713075B (zh) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体隔离环、等离子体处理装置与基片处理方法
CN112802729B (zh) * 2019-11-13 2024-05-10 中微半导体设备(上海)股份有限公司 带温度维持装置的隔离环
CN112928007B (zh) * 2019-12-06 2023-09-12 中微半导体设备(上海)股份有限公司 等离子体处理设备及用于等离子体处理设备的下电极组件
CN114830317A (zh) * 2019-12-19 2022-07-29 朗姆研究公司 消耗性室部件中的封装式射频识别
CN113745081B (zh) * 2020-05-27 2024-03-12 中微半导体设备(上海)股份有限公司 一种隔离环组件、等离子体处理装置及处理方法
CN114649178A (zh) * 2020-12-18 2022-06-21 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
KR102326741B1 (ko) * 2021-08-18 2021-11-16 주식회사 린텍 실리콘 파우더와 고주파 가열장치를 이용한 실리콘 부품의 접합 방법

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Publication number Priority date Publication date Assignee Title
KR20110039250A (ko) * 2008-07-07 2011-04-15 램 리써치 코포레이션 플라즈마 처리 챔버에 사용하기 위한 진공 갭을 포함하는 플라즈마 대향 프로브 장치
KR20190101509A (ko) * 2009-08-31 2019-08-30 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR20190102098A (ko) * 2009-08-31 2019-09-02 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
US10720314B2 (en) 2009-08-31 2020-07-21 Lam Research Corporation Confinement ring for use in a plasma processing system
KR20200117074A (ko) * 2009-08-31 2020-10-13 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR20210006009A (ko) * 2009-08-31 2021-01-15 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR20210021151A (ko) * 2009-08-31 2021-02-24 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR20210034704A (ko) * 2009-08-31 2021-03-30 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
WO2011149615A3 (en) * 2010-05-24 2012-02-02 Applied Materials, Inc. Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus

Also Published As

Publication number Publication date
WO2007001865A3 (en) 2009-06-18
TW200708207A (en) 2007-02-16
CN101553900A (zh) 2009-10-07
JP5492411B2 (ja) 2014-05-14
JP2009500812A (ja) 2009-01-08
US20100178774A1 (en) 2010-07-15
KR20130023372A (ko) 2013-03-07
US20130095666A1 (en) 2013-04-18
JP5220178B2 (ja) 2013-06-26
US7713379B2 (en) 2010-05-11
JP2012099829A (ja) 2012-05-24
TWI416996B (zh) 2013-11-21
MY164564A (en) 2018-01-15
CN101553900B (zh) 2011-08-17
US20060283552A1 (en) 2006-12-21
US8337662B2 (en) 2012-12-25
US9123650B2 (en) 2015-09-01
WO2007001865A2 (en) 2007-01-04
KR101468340B1 (ko) 2014-12-03

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