JP4995917B2 - 石英ガードリング - Google Patents
石英ガードリング Download PDFInfo
- Publication number
- JP4995917B2 JP4995917B2 JP2009532481A JP2009532481A JP4995917B2 JP 4995917 B2 JP4995917 B2 JP 4995917B2 JP 2009532481 A JP2009532481 A JP 2009532481A JP 2009532481 A JP2009532481 A JP 2009532481A JP 4995917 B2 JP4995917 B2 JP 4995917B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- backing member
- assembly
- plasma
- guard ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 12
- 239000010453 quartz Substances 0.000 title claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 26
- 238000005530 etching Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010849 ion bombardment Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (19)
- 半導体基板処理において使用されるプラズマ反応チャンバのための電極組立体であって、
上部電極と、
前記上部電極の上面に取り付け可能な裏当て部材と、
前記裏当て部材の外側面を囲み、前記上部電極の上面の上に配置された外側リングと、
を備えることを特徴とする電極組立体。 - (a)前記外側リングは石英からなる、
(b)前記裏当て部材はアルミニウム又はアルミニウム合金からなる、
(c)前記上部電極は単結晶シリコンからなる、及び/又は、
(d)前記上部電極は内側電極及び外側電極を含む、
ことを特徴とする請求項1に記載の組立体。 - 前記外側電極は、外側電極リングを形成する複数のセグメントを含み、前記複数のセグメントの各々のインターフェースにおいて重なり合う表面を持つことを特徴とする請求項2に記載の組立体。
- (a)前記裏当て部材は内側裏当て部材及び外側裏当て部材を含む、
(b)結合材料が前記上部電極の前記上面を前記裏当て部材に取り付ける、及び/又は、
(c)前記上部電極は単結晶シリコンからなる、
ことを特徴とする請求項1に記載の組立体。 - 前記外側リングは長方形の断面を有することを特徴とする請求項1に記載の組立体。
- 前記外側リングは、上部垂直面及び下部傾斜面を含む内周面を有することを特徴とする請求項1に記載の組立体。
- 前記外側リングの下面は、前記上部電極の前記上面の外側に伸びていることを特徴とする請求項1に記載の組立体。
- (a)前記外側リングは長方形状の断面を有する、
(b)前記裏当て部材はアルミニウム又はアルミニウム合金からなる、
(c)前記上部電極は単結晶シリコンからなる、及び/又は、
(d)前記外側リングは石英からなる、
ことを特徴とする請求項7に記載の組立体。 - 半導体基板処理において使用されるプラズマ反応チャンバの電極組立体に使われるガードリングであって、前記電極組立体は、裏当て部材に結合されたシャワーヘッド電極を含み、閉じ込めリングが前記電極組立体を囲んでいて、前記ガードリングは、
前記裏当て部材の外周と前記閉じ込めリング組立体の内周との間に収められたガードリングを備え、前記ガードリングは前記上部電極の前記上面の上に横たわるように構成された下面を有することを特徴とするガードリング。 - 前記ガードリングは石英製であり、その内周にオプションでコーティングを含むことを特徴とする請求項9に記載のガードリング。
- 電極組立体の裏当て部材の周りにガードリングを配置する方法であって、前記裏当て部材は、半導体基板処理において使用されるプラズマ反応チャンバにおいてプラズマを生成するために使用される電極に結合されていて、前記方法は、
前記ガードリングの底面が上部電極の上面の上に横たわるように、前記ガードリングを前記裏当て部材の外側面の周りに配置する工程を含むことを特徴とする方法。 - 前記プラズマチャンバの中に前記電極組立体を設置する工程を含むことを特徴とする請求項11に記載の方法。
- 請求項1に記載の前記電極組立体を含むプラズマチャンバにおいて半導体基板を処理する方法であって、
前記プラズマチャンバの中であって上部電極からギャップをもって離れている下部電極の上に半導体基板を支持する工程と、
処理ガスを前記ギャップの中に供給し、前記処理ガスにエネルギーを与えてプラズマにする工程と、
前記プラズマで半導体基板を処理する工程と、
を含むことを特徴とする方法。 - 前記プラズマはプラズマ閉じ込めリング組立体によって前記ギャップの中に閉じ込められ、処理中に前記電極組立体と前記プラズマ閉じ込めリング組立体との距離が前記外側リングによって所定の距離に維持されることを特徴とする請求項13記載の方法。
- 前記外側リングは、前記裏当て部材と前記上部電極との間の結合を前記プラズマが攻撃することを防ぐことを特徴とする請求項13に記載の方法。
- 前記処理はプラズマエッチングを含むことを特徴とする請求項13に記載の方法。
- 前記処理中に、RFバイアスが前記半導体基板に印加されることを特徴とする請求項13に記載の方法。
- 前記処理中に、前記外側リングは、前記プラズマ閉じ込めリング組立体と同じ膨張率で熱膨張することを特徴とする請求項13に記載の方法。
- 前記外側リング及び前記プラズマ閉じ込めリング組立体は石英製であることを特徴とする請求項14に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85234506P | 2006-10-16 | 2006-10-16 | |
US60/852,345 | 2006-10-16 | ||
US11/701,430 US7482550B2 (en) | 2006-10-16 | 2007-02-02 | Quartz guard ring |
US11/701,430 | 2007-02-02 | ||
PCT/US2007/022080 WO2008048604A1 (en) | 2006-10-16 | 2007-10-16 | Quartz guard ring |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010507232A JP2010507232A (ja) | 2010-03-04 |
JP4995917B2 true JP4995917B2 (ja) | 2012-08-08 |
Family
ID=39314338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009532481A Active JP4995917B2 (ja) | 2006-10-16 | 2007-10-16 | 石英ガードリング |
Country Status (6)
Country | Link |
---|---|
US (2) | US7482550B2 (ja) |
JP (1) | JP4995917B2 (ja) |
KR (1) | KR101411753B1 (ja) |
SG (1) | SG175648A1 (ja) |
TW (1) | TWI444108B (ja) |
WO (1) | WO2008048604A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
US7722778B2 (en) * | 2006-06-28 | 2010-05-25 | Lam Research Corporation | Methods and apparatus for sensing unconfinement in a plasma processing chamber |
US7875824B2 (en) * | 2006-10-16 | 2011-01-25 | Lam Research Corporation | Quartz guard ring centering features |
US8702866B2 (en) | 2006-12-18 | 2014-04-22 | Lam Research Corporation | Showerhead electrode assembly with gas flow modification for extended electrode life |
JP2008205219A (ja) * | 2007-02-20 | 2008-09-04 | Masato Toshima | シャワーヘッドおよびこれを用いたcvd装置 |
US8069817B2 (en) * | 2007-03-30 | 2011-12-06 | Lam Research Corporation | Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses |
SG10201407723PA (en) * | 2007-12-19 | 2014-12-30 | Lam Res Corp | A composite showerhead electrode assembly for a plasma processing apparatus |
JP5567494B2 (ja) * | 2007-12-19 | 2014-08-06 | ラム リサーチ コーポレーション | 半導体真空処理装置用のコンポーネント・アセンブリ、アセンブリを結合する方法、及び、半導体基板を処理する方法 |
US8161906B2 (en) * | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
US8272346B2 (en) * | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
TWI485799B (zh) | 2009-12-10 | 2015-05-21 | Orbotech Lt Solar Llc | 自動排序之直線型處理裝置 |
JP5316393B2 (ja) * | 2009-12-15 | 2013-10-16 | 三菱マテリアル株式会社 | プラズマ処理装置用電極板 |
JP5730521B2 (ja) * | 2010-09-08 | 2015-06-10 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
US8459276B2 (en) | 2011-05-24 | 2013-06-11 | Orbotech LT Solar, LLC. | Broken wafer recovery system |
US9508530B2 (en) | 2011-11-21 | 2016-11-29 | Lam Research Corporation | Plasma processing chamber with flexible symmetric RF return strap |
US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
US11598003B2 (en) * | 2017-09-12 | 2023-03-07 | Applied Materials, Inc. | Substrate processing chamber having heated showerhead assembly |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5569356A (en) * | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
US5997962A (en) | 1995-06-30 | 1999-12-07 | Tokyo Electron Limited | Plasma process utilizing an electrostatic chuck |
US5534751A (en) | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
JP3461120B2 (ja) * | 1998-06-29 | 2003-10-27 | 日立化成工業株式会社 | プラズマエッチング用電極板及びプラズマエッチング装置 |
US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
JP2000058510A (ja) * | 1998-07-31 | 2000-02-25 | Hitachi Chem Co Ltd | プラズマエッチング電極板 |
US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
US6391787B1 (en) | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
US20020127853A1 (en) * | 2000-12-29 | 2002-09-12 | Hubacek Jerome S. | Electrode for plasma processes and method for manufacture and use thereof |
US6818096B2 (en) * | 2001-04-12 | 2004-11-16 | Michael Barnes | Plasma reactor electrode |
US6786175B2 (en) | 2001-08-08 | 2004-09-07 | Lam Research Corporation | Showerhead electrode design for semiconductor processing reactor |
KR100954711B1 (ko) | 2002-04-17 | 2010-04-23 | 램 리써치 코포레이션 | 플라즈마 반응 챔버용 실리콘 부품 |
CN100442429C (zh) * | 2002-05-23 | 2008-12-10 | 蓝姆研究公司 | 用于半导体处理等离子反应器的多部分电极以及替换多部分电极的一部分的方法 |
US6841943B2 (en) * | 2002-06-27 | 2005-01-11 | Lam Research Corp. | Plasma processor with electrode simultaneously responsive to plural frequencies |
JP2004058510A (ja) | 2002-07-30 | 2004-02-26 | Fuji Photo Film Co Ltd | プリントシステムおよびプリント |
US7461502B2 (en) * | 2003-03-20 | 2008-12-09 | Elwing Llc | Spacecraft thruster |
JP4220316B2 (ja) | 2003-06-24 | 2009-02-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
-
2007
- 2007-02-02 US US11/701,430 patent/US7482550B2/en active Active
- 2007-10-16 TW TW096138751A patent/TWI444108B/zh active
- 2007-10-16 JP JP2009532481A patent/JP4995917B2/ja active Active
- 2007-10-16 WO PCT/US2007/022080 patent/WO2008048604A1/en active Application Filing
- 2007-10-16 KR KR1020097009707A patent/KR101411753B1/ko active IP Right Grant
- 2007-10-16 SG SG2011075967A patent/SG175648A1/en unknown
-
2009
- 2009-01-22 US US12/357,989 patent/US7939778B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR101411753B1 (ko) | 2014-06-27 |
TWI444108B (zh) | 2014-07-01 |
TW200829089A (en) | 2008-07-01 |
SG175648A1 (en) | 2011-11-28 |
JP2010507232A (ja) | 2010-03-04 |
US7482550B2 (en) | 2009-01-27 |
US20090127234A1 (en) | 2009-05-21 |
US20080099448A1 (en) | 2008-05-01 |
KR20090068283A (ko) | 2009-06-25 |
US7939778B2 (en) | 2011-05-10 |
WO2008048604A1 (en) | 2008-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4995917B2 (ja) | 石英ガードリング | |
JP5006401B2 (ja) | 石英ガードリングセンタリング機構 | |
JP4971365B2 (ja) | プラズマ反応チャンバ用の電極アセンブリ | |
JP5974054B2 (ja) | 温度制御式ホットエッジリング組立体 | |
CN100474521C (zh) | 温控热边缘环组件,包含该组件的装置及其用途 | |
JP4971321B2 (ja) | プラズマ処理システムでの使用に適合された基板支持部の結合層を保護する方法 | |
TWI536871B (zh) | 單體噴淋頭電極、包含單體噴淋頭電極之電極組件、及利用單體噴淋頭電極在電漿室內處理半導體基板之方法 | |
TWI577245B (zh) | 下電極組件之側邊密封 | |
KR20050057423A (ko) | 기판상에의 중합체 증착을 감소시키기 위한 장치를 구비한플라즈마 장치 및 중합체 증착을 감소시키는 방법 | |
US20130097840A1 (en) | Edge seal for lower electrode assembly | |
KR20210087547A (ko) | 에지 링의 온도 및 바이어스 제어 | |
US20200035465A1 (en) | Substrate processing apparatus and plasma sheath height control method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101013 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111209 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120228 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120423 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120510 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150518 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4995917 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |