TWI416609B - 電漿處理系統之用於將遮罩底切及凹口減至最少的方法 - Google Patents
電漿處理系統之用於將遮罩底切及凹口減至最少的方法 Download PDFInfo
- Publication number
- TWI416609B TWI416609B TW096118991A TW96118991A TWI416609B TW I416609 B TWI416609 B TW I416609B TW 096118991 A TW096118991 A TW 096118991A TW 96118991 A TW96118991 A TW 96118991A TW I416609 B TWI416609 B TW I416609B
- Authority
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- Taiwan
- Prior art keywords
- processing
- processing step
- etching
- recipe
- layer
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 153
- 238000000034 method Methods 0.000 title claims abstract description 74
- 238000005530 etching Methods 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000007789 gas Substances 0.000 claims description 68
- 229910052732 germanium Inorganic materials 0.000 claims description 52
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 52
- 239000000203 mixture Substances 0.000 claims description 51
- 229910052715 tantalum Inorganic materials 0.000 claims description 23
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 23
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 17
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 17
- 229910052731 fluorine Inorganic materials 0.000 claims description 17
- 239000011737 fluorine Substances 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 17
- 229910052707 ruthenium Inorganic materials 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 210000003298 dental enamel Anatomy 0.000 claims description 5
- 238000009472 formulation Methods 0.000 claims 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 description 58
- 230000008021 deposition Effects 0.000 description 55
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00563—Avoid or control over-etching
- B81C1/00571—Avoid or control under-cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/421,000 US7351664B2 (en) | 2006-05-30 | 2006-05-30 | Methods for minimizing mask undercuts and notches for plasma processing system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200818289A TW200818289A (en) | 2008-04-16 |
| TWI416609B true TWI416609B (zh) | 2013-11-21 |
Family
ID=38790799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096118991A TWI416609B (zh) | 2006-05-30 | 2007-05-28 | 電漿處理系統之用於將遮罩底切及凹口減至最少的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7351664B2 (ko) |
| EP (1) | EP2022106A4 (ko) |
| JP (1) | JP5214596B2 (ko) |
| KR (1) | KR101399181B1 (ko) |
| CN (1) | CN101461072B (ko) |
| TW (1) | TWI416609B (ko) |
| WO (1) | WO2008005630A2 (ko) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7985688B2 (en) * | 2005-12-16 | 2011-07-26 | Lam Research Corporation | Notch stop pulsing process for plasma processing system |
| US9123509B2 (en) | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| US20090004836A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
| JP4999185B2 (ja) * | 2008-03-04 | 2012-08-15 | 富士フイルム株式会社 | ドライエッチング方法及びドライエッチング装置 |
| US8329578B2 (en) | 2009-03-27 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via structure and via etching process of forming the same |
| JP5288555B2 (ja) * | 2009-05-27 | 2013-09-11 | サムコ株式会社 | 誘導結合プラズマ処理装置及びプラズマエッチング方法 |
| GB2499816A (en) | 2012-02-29 | 2013-09-04 | Oxford Instr Nanotechnology Tools Ltd | Controlling deposition and etching in a chamber with fine time control of parameters and gas flow |
| CN103898613B (zh) * | 2012-12-24 | 2017-07-07 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀方法 |
| US9711365B2 (en) | 2014-05-02 | 2017-07-18 | International Business Machines Corporation | Etch rate enhancement for a silicon etch process through etch chamber pretreatment |
| CN105374737B (zh) * | 2014-08-25 | 2019-02-26 | 中微半导体设备(上海)有限公司 | 抑制刻蚀过程中孔底部出现缺口的方法、孔的形成方法 |
| GB201608926D0 (en) * | 2016-05-20 | 2016-07-06 | Spts Technologies Ltd | Method for plasma etching a workpiece |
| US9997364B2 (en) * | 2016-10-19 | 2018-06-12 | Lam Research Corporation | High aspect ratio etch |
| CN109585293B (zh) * | 2017-09-29 | 2021-12-24 | 台湾积体电路制造股份有限公司 | 切割金属工艺中的基脚去除 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030003748A1 (en) * | 2001-05-24 | 2003-01-02 | Anisul Khan | Method of eliminating notching when anisotropically etching small linewidth openings in silicon on insulator |
| US20050009358A1 (en) * | 2003-07-10 | 2005-01-13 | Applied Materials, Inc. | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode |
| US20050032386A1 (en) * | 2003-08-04 | 2005-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching and plasma treatment process to improve a gate profile |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5188704A (en) | 1989-10-20 | 1993-02-23 | International Business Machines Corporation | Selective silicon nitride plasma etching |
| US6500314B1 (en) | 1996-07-03 | 2002-12-31 | Tegal Corporation | Plasma etch reactor and method |
| US6187685B1 (en) | 1997-08-01 | 2001-02-13 | Surface Technology Systems Limited | Method and apparatus for etching a substrate |
| KR20010004243A (ko) * | 1999-06-28 | 2001-01-15 | 김영환 | 반도체 제조 장비의 플라즈마 챔버 클리닝 방법 |
| DE19933841A1 (de) | 1999-07-20 | 2001-02-01 | Bosch Gmbh Robert | Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas |
| DE19957169A1 (de) | 1999-11-27 | 2001-06-13 | Bosch Gmbh Robert | Plasmaätzverfahren mit gepulster Substratelektrodenleistung |
| JP2001237218A (ja) * | 2000-02-21 | 2001-08-31 | Nec Corp | 半導体装置の製造方法 |
| US6677242B1 (en) * | 2000-08-12 | 2004-01-13 | Applied Materials Inc. | Integrated shallow trench isolation approach |
| JP2002170814A (ja) * | 2000-11-30 | 2002-06-14 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
| US6905626B2 (en) | 2002-07-24 | 2005-06-14 | Unaxis Usa Inc. | Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma |
| US7361599B2 (en) * | 2002-09-03 | 2008-04-22 | Texas Instruments Incorporated | Integrated circuit and method |
| US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
| US20050112891A1 (en) * | 2003-10-21 | 2005-05-26 | David Johnson | Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation |
| US7682985B2 (en) * | 2004-03-17 | 2010-03-23 | Lam Research Corporation | Dual doped polysilicon and silicon germanium etch |
| KR100670706B1 (ko) * | 2004-06-08 | 2007-01-17 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택 플러그 형성 방법 |
| JP4459877B2 (ja) * | 2004-08-12 | 2010-04-28 | 住友精密工業株式会社 | エッチング方法及びエッチング装置 |
| US7985688B2 (en) | 2005-12-16 | 2011-07-26 | Lam Research Corporation | Notch stop pulsing process for plasma processing system |
-
2006
- 2006-05-30 US US11/421,000 patent/US7351664B2/en not_active Expired - Fee Related
-
2007
- 2007-05-28 TW TW096118991A patent/TWI416609B/zh not_active IP Right Cessation
- 2007-05-29 WO PCT/US2007/069910 patent/WO2008005630A2/en active Application Filing
- 2007-05-29 CN CN2007800201827A patent/CN101461072B/zh active Active
- 2007-05-29 EP EP07840207A patent/EP2022106A4/en not_active Withdrawn
- 2007-05-29 KR KR1020087029273A patent/KR101399181B1/ko active IP Right Grant
- 2007-05-29 JP JP2009513426A patent/JP5214596B2/ja not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030003748A1 (en) * | 2001-05-24 | 2003-01-02 | Anisul Khan | Method of eliminating notching when anisotropically etching small linewidth openings in silicon on insulator |
| US20050009358A1 (en) * | 2003-07-10 | 2005-01-13 | Applied Materials, Inc. | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode |
| US20050032386A1 (en) * | 2003-08-04 | 2005-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching and plasma treatment process to improve a gate profile |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008005630A2 (en) | 2008-01-10 |
| CN101461072A (zh) | 2009-06-17 |
| JP5214596B2 (ja) | 2013-06-19 |
| CN101461072B (zh) | 2011-03-23 |
| WO2008005630A3 (en) | 2008-03-13 |
| EP2022106A2 (en) | 2009-02-11 |
| TW200818289A (en) | 2008-04-16 |
| US20070281489A1 (en) | 2007-12-06 |
| US7351664B2 (en) | 2008-04-01 |
| KR20090023363A (ko) | 2009-03-04 |
| EP2022106A4 (en) | 2011-03-30 |
| JP2009539267A (ja) | 2009-11-12 |
| KR101399181B1 (ko) | 2014-05-27 |
| WO2008005630B1 (en) | 2008-05-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |