TWI415294B - 發光二極體晶片 - Google Patents

發光二極體晶片 Download PDF

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Publication number
TWI415294B
TWI415294B TW097117914A TW97117914A TWI415294B TW I415294 B TWI415294 B TW I415294B TW 097117914 A TW097117914 A TW 097117914A TW 97117914 A TW97117914 A TW 97117914A TW I415294 B TWI415294 B TW I415294B
Authority
TW
Taiwan
Prior art keywords
filter element
radiation
angle
light
wavelength
Prior art date
Application number
TW097117914A
Other languages
English (en)
Chinese (zh)
Other versions
TW200910652A (en
Inventor
Streubel Klaus
Wirth Ralph
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200910652A publication Critical patent/TW200910652A/zh
Application granted granted Critical
Publication of TWI415294B publication Critical patent/TWI415294B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
TW097117914A 2007-05-30 2008-05-15 發光二極體晶片 TWI415294B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007025092A DE102007025092A1 (de) 2007-05-30 2007-05-30 Lumineszenzdiodenchip

Publications (2)

Publication Number Publication Date
TW200910652A TW200910652A (en) 2009-03-01
TWI415294B true TWI415294B (zh) 2013-11-11

Family

ID=39712595

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097117914A TWI415294B (zh) 2007-05-30 2008-05-15 發光二極體晶片

Country Status (8)

Country Link
US (1) US8405104B2 (ko)
EP (1) EP2149163B9 (ko)
JP (1) JP2010528479A (ko)
KR (1) KR101647150B1 (ko)
CN (1) CN101681967B (ko)
DE (1) DE102007025092A1 (ko)
TW (1) TWI415294B (ko)
WO (1) WO2008145096A1 (ko)

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US7949213B2 (en) * 2007-12-07 2011-05-24 Qualcomm Mems Technologies, Inc. Light illumination of displays with front light guide and coupling elements
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WO2021204652A1 (de) * 2020-04-08 2021-10-14 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und beleuchtungsvorrichtung
DE102020114884A1 (de) * 2020-06-04 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements
DE102021119657A1 (de) * 2020-07-31 2022-02-03 Epistar Corporation Lichtemittierende Vorrichtung und Anzeigevorrichtung, die sie enthält
GB2598753B (en) * 2020-09-10 2023-06-14 Plessey Semiconductors Ltd Selective optical filter for RGB LED
CN112241088B (zh) * 2020-10-15 2021-09-03 Tcl华星光电技术有限公司 一种微型发光二极管灯板、背光模组及其制备方法
DE102021123818A1 (de) 2021-09-15 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes halbleiterbauteil, verfahren zur auswahl eines dielektrischen schichtenstapels und verfahren zur auswahl eines konversionsmaterials
DE102021124146A1 (de) 2021-09-17 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips
DE102021129106A1 (de) 2021-11-09 2023-05-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip und desinfektionsvorrichtung

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Also Published As

Publication number Publication date
DE102007025092A1 (de) 2008-12-04
CN101681967A (zh) 2010-03-24
WO2008145096A1 (de) 2008-12-04
US8405104B2 (en) 2013-03-26
EP2149163B9 (de) 2017-09-27
TW200910652A (en) 2009-03-01
EP2149163B1 (de) 2017-04-12
CN101681967B (zh) 2012-08-15
US20100084678A1 (en) 2010-04-08
JP2010528479A (ja) 2010-08-19
KR101647150B1 (ko) 2016-08-23
EP2149163A1 (de) 2010-02-03
KR20100017677A (ko) 2010-02-16

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