TWI402912B - Manufacturing method of insulating film and manufacturing method of semiconductor device - Google Patents

Manufacturing method of insulating film and manufacturing method of semiconductor device Download PDF

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Publication number
TWI402912B
TWI402912B TW095111268A TW95111268A TWI402912B TW I402912 B TWI402912 B TW I402912B TW 095111268 A TW095111268 A TW 095111268A TW 95111268 A TW95111268 A TW 95111268A TW I402912 B TWI402912 B TW I402912B
Authority
TW
Taiwan
Prior art keywords
plasma
insulating film
processing
gas
oxidation treatment
Prior art date
Application number
TW095111268A
Other languages
English (en)
Chinese (zh)
Other versions
TW200703505A (en
Inventor
Tatsuo Nishita
Toshio Nakanishi
Shuuichi Ishizuka
Tomoe Nakayama
Yutaka Fujino
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200703505A publication Critical patent/TW200703505A/zh
Application granted granted Critical
Publication of TWI402912B publication Critical patent/TWI402912B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW095111268A 2005-03-30 2006-03-30 Manufacturing method of insulating film and manufacturing method of semiconductor device TWI402912B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005099408 2005-03-30
JP2005292346A JP2006310736A (ja) 2005-03-30 2005-10-05 ゲート絶縁膜の製造方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200703505A TW200703505A (en) 2007-01-16
TWI402912B true TWI402912B (zh) 2013-07-21

Family

ID=37073233

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111268A TWI402912B (zh) 2005-03-30 2006-03-30 Manufacturing method of insulating film and manufacturing method of semiconductor device

Country Status (6)

Country Link
US (1) US20090239364A1 (enExample)
JP (1) JP2006310736A (enExample)
KR (1) KR100966927B1 (enExample)
CN (1) CN101151721B (enExample)
TW (1) TWI402912B (enExample)
WO (1) WO2006106667A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
JP4975569B2 (ja) * 2007-09-11 2012-07-11 東京エレクトロン株式会社 プラズマ酸化処理方法およびシリコン酸化膜の形成方法
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP4902716B2 (ja) * 2008-11-20 2012-03-21 株式会社日立国際電気 不揮発性半導体記憶装置およびその製造方法
JP5692794B2 (ja) * 2010-03-17 2015-04-01 独立行政法人産業技術総合研究所 透明導電性炭素膜の製造方法
US8450221B2 (en) * 2010-08-04 2013-05-28 Texas Instruments Incorporated Method of forming MOS transistors including SiON gate dielectric with enhanced nitrogen concentration at its sidewalls
JP5839804B2 (ja) * 2011-01-25 2016-01-06 国立大学法人東北大学 半導体装置の製造方法、および半導体装置
KR101926571B1 (ko) 2011-05-31 2018-12-10 어플라이드 머티어리얼스, 인코포레이티드 유도성 커플링된 플라즈마(ｉｃｐ) 반응기를 위한 동적인 이온 라디칼 시브 및 이온 라디칼 개구
KR101817131B1 (ko) 2012-03-19 2018-01-11 에스케이하이닉스 주식회사 게이트절연층 형성 방법 및 반도체장치 제조 방법
WO2018052476A1 (en) * 2016-09-14 2018-03-22 Applied Materials, Inc. Steam oxidation initiation for high aspect ratio conformal radical oxidation
CN108807139A (zh) * 2017-05-05 2018-11-13 上海新昇半导体科技有限公司 氧化硅生长系统、方法及半导体测试结构的制作方法
CN109545687B (zh) * 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体氧化的凹槽mosfet器件制造方法
CN109494147B (zh) * 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体的碳化硅氧化方法
TWI894310B (zh) * 2020-08-02 2025-08-21 美商應用材料股份有限公司 用於環繞式閘極奈米片輸出入裝置之共形氧化

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683012B2 (en) * 1997-03-25 2004-01-27 Rohm Co., Ltd. Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride
WO2004047157A1 (ja) * 2002-11-20 2004-06-03 Tokyo Electron Limited プラズマ処理装置及びプラズマ処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002058130A (ja) * 2000-08-07 2002-02-22 Sumitomo Wiring Syst Ltd 電気接続箱
EP1361605A4 (en) * 2001-01-22 2006-02-15 Tokyo Electron Ltd PRODUCTION PROCESS
JP2003124204A (ja) * 2001-10-18 2003-04-25 Toshiba Corp プラズマ処理装置及びこれを用いた半導体装置の製造方法
US7517751B2 (en) * 2001-12-18 2009-04-14 Tokyo Electron Limited Substrate treating method
JP2004040064A (ja) * 2002-07-01 2004-02-05 Yutaka Hayashi 不揮発性メモリとその製造方法
WO2004070816A1 (ja) * 2003-02-06 2004-08-19 Tokyo Electron Limited プラズマ処理方法，半導体基板及びプラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683012B2 (en) * 1997-03-25 2004-01-27 Rohm Co., Ltd. Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride
WO2004047157A1 (ja) * 2002-11-20 2004-06-03 Tokyo Electron Limited プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
US20090239364A1 (en) 2009-09-24
KR20070112830A (ko) 2007-11-27
TW200703505A (en) 2007-01-16
CN101151721A (zh) 2008-03-26
JP2006310736A (ja) 2006-11-09
CN101151721B (zh) 2011-11-16
KR100966927B1 (ko) 2010-06-29
WO2006106667A1 (ja) 2006-10-12

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