TWI397601B - 用於將膜沉積至基材上的方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 32
- 238000000151 deposition Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 title claims description 22
- 229910010272 inorganic material Inorganic materials 0.000 claims description 29
- 239000011147 inorganic material Substances 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000010408 film Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 24
- 239000004743 Polypropylene Substances 0.000 description 9
- 229920001155 polypropylene Polymers 0.000 description 9
- -1 CdSe Chemical class 0.000 description 8
- 239000011669 selenium Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 239000006096 absorbing agent Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910016001 MoSe Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Description
本發明係相關於使用濺鍍沈積法將膜沈積於一基材上之方法，以及使用此製程製造之電子裝置。
目前已知SnS適用於使用作為光電裝置與光電壓應用之太陽能吸收劑。
在“Optical properties of thermally evaporated SnS thin films”(M.M. El-Nahass,et.al. Optical Materials 20(2002)159-170)一文中，揭示SnS薄膜可以各種方法製造(噴霧熱分解法、化學沈積法，或熱蒸汽法)，目的在於製造適用於使用作為光電裝置與光電壓應用之太陽能吸收劑之薄膜。
塊材結晶SnS材料之熱蒸汽法可產生非晶形薄膜。結晶型薄膜一般係將非晶形SnS薄膜於200℃下退火(annealing)而產生。
W. Guang-Pu,et.al. First WCPEC;Dec.5-9,1994,Hawaii，揭示有關於SnS薄膜之RF(無線電頻)濺鍍法，用於光電壓應用領域。RF濺鍍(由室溫至350℃樣本溫度)會產生非晶形SnS。沈積後，結晶型SnS係於400℃下退火而形成。
M. Y. Versavel,et.al. Thin Solid Films 515(2007),7171-7176，係揭示Sb2
S3
之RF(無線電頻)電鍍。沈積之薄膜為非晶形，因此需要於400℃退火，在硫蒸汽存在下。
本發明之一目的係提供另一製備無機材料結晶形薄膜之方法，藉由直接沈積，而不需後續之處理步驟。
本發明藉由提供一種使用濺鍍沈積法將膜沈積至基材上之方法，而符合該目的，其中該濺鍍沈積法包含直流電濺鍍沈積，其中該膜係由至少90wt-%之具有半導體性質之無機材料M2組成，藉此該無機材料M2之膜係以結晶結構直接沈積，使得至少50wt-%沈積膜具有結晶結構，其中該用於濺鍍沈積之來源材料(標靶)係由至少80wt-%之無機材料M2組成，其中該無機材料M2係選自於包含含有硫、硒，及/或碲之二、三或四鹽類之族群。
在直流電濺鍍沈積無機材料方面，先前技藝並無法以結晶結構直接沈積，但現在可以，並可達到結晶結構。此優點為後續步驟如於高溫下退火可被省略。
直接濺鍍沈積法可以RF濺鍍法及/或脈衝濺鍍法(脈衝DC濺鍍)沈積。
在一較佳實施例中，該無機材料M2係選自於由SnS、Sb2
S3
、Bi2
S3
，以及其他半導體硫化物、硒化物或碲化物，如CdSe、In2
S3
、In2
Se3
、SnS、SnSe、PbS、PbSe、MoSe2
、GeTe、Bi2
Te3
，或Sb2
Te3
；Cu、Sb與S(或Se、Te)之化合物(如CuSbS2
、Cu2
SnS3
、CuSbSe2
、Cu2
SnSe3
)；Pb、Sb與S(或Se或Te)之化合物(PbSnS3
、PbSnSe3
)組成之族群。就此方法而言，使用於薄膜光電壓裝置中之吸收劑層，可直接沈積於基材上。
較佳該無機材料M2為SnS、Sb2
S3
、Bi2
S3
、SnSe、Sb2
Se3
、Bi2
Se3
、Sb2
Te3
或其組合(如Snx
(Sb,Bi)y
(S,Se,Te)z
)。此類材料尚未被報導可以濺鍍法產生主要結晶結構而直接沈積。
在另一實施例中，該無機材料M2係選自於由SnS、Bi2
S3
或SnS與Bi2
S3
(如(SnS)x
(Bi2
S3
)y
)之組合。
尤其是就SnS而言，若結晶結構為斜方系(如硫錫礦(Herzenbergite))，該方法則較具優勢。在先前技術中，無法直接沈積高結晶形式之SnS，而需後續之退火處理。
在另一實施例中，沈積時間之至少90%期間，該基材溫度T1維持低於200℃。此優點為在高溫下會熔融、分解或變形之均勻基材，可塗覆此類無機材料。
若溫度T1維持低於100℃，均勻聚合物材料如聚丙烯、聚苯乙烯或聚乙烯，便可經塗覆。
使用此方法，溫度T1係維持低於60℃，塗覆之薄膜仍維持結晶型。
較佳該加工參數(t(時間)、T(溫度)、p(壓力)、P(功率)、U(電壓)...)係經設定，使得該無機材料M2之膜係以至少60nm/分鐘(1nm/s)之沈積速率沈積。若該無機材料可以DC濺鍍法沈積，則各參數可設定為使得高沈積速率可達成，且仍可產生結晶層。
在較佳實施例中，在含有無機材料M2之薄膜沈積前，另一無機材料M1層已經沈積。
無機材料M1較佳選自於由金屬或導電性氧化物組成之族群，其中可產生與吸收層接觸之背層。
較佳該無機材料M1已由濺鍍沈積法沈積。使用這些沈積法，M1層與M2層可沈積於一基材上，而不需中間真空中斷。
在另一實施例中，該基材係選自於由陶瓷、玻璃、聚合物、塑膠組成之族群。此材料可提供為薄片狀(如箔、織布、不織布、紙、薄織物)、纖維、管狀或其他修飾物。
本發明之另一觀點為一種由上述任一方法製造之產品。
本發明之另一觀點為一種能量轉換電池，如Peltier元件或太陽能電池，其內含由上述任一方法製造之產品。
較佳該能量轉換電池(光電壓電池或Peltier元件)包含一吸收劑層，其中該吸收層係以上述任一方法沈積。
在Peltier元件之一實施例中，係使用二或三碲化物(如Bi2
Te3
)。
第1圖顯示以本發明較佳實施例沈積於玻璃基材上之SnS結晶薄膜之XRD資料。
第2圖顯示以本發明較佳實施例沈積於聚丙烯(PP)基材上之SnS結晶薄膜之XRD資料。
第3圖顯示以本發明較佳實施例沈積之SnS薄膜。
第4圖顯示以本發明較佳實施例沈積之SnS薄膜之電流電壓特性(I/V特性)。
下面係揭示實施本發明之較佳實施例。
上述三材料(M1、M2、M3)已經濺鍍沈積。M1為金屬，M2為無機光電壓吸收材料，以及M3為透明導電材料。
相關參數之較佳加工視窗摘錄於表1。基材簡稱列於下：BSG(硼矽酸鹽玻璃)、玻璃(一般載玻片)、PP(聚丙烯)、PE(聚乙烯)、Fe(不鏽鋼片)、Cu(銅片)、Al(鋁箔)。選用之濺鍍技術為DC濺鍍法，使用或不使用脈衝。使用之標靶係以各粉末(如SnS、Bi2
S3
、Sb2
S3
或其混合物)之熱等靜壓法(HIP)形成。硫可使用作為壓製輔助物，濃度為約3莫耳-%。
七種具有經選擇參數值之不同樣本(樣本1-7)係摘錄於表2。在樣本1、2、3、4、6與7中，單層係沈積於基材上，其中樣本5係沈積有Mo/SnS/ZnO:Al三層堆疊。各層係依序沈積，以形成具有鄰近接觸層之吸收層，用於光電壓電池中。第一層Mo係沈積於玻璃上作為背面接觸，之後沈積SnS，最後沈積ZnO:Al。ZnO:Al係使用作為透明接觸氧化物(TCO)，其中ZnO添補有1-2wt-% Al，其使用DC濺鍍技術，由ZnO:Al標靶噴濺出。
此三層皆以DC濺鍍沈積法沈積，在基本上相同之條件下，但使用不同之濺鍍裝置。該樣本由一裝置移至另一裝置不需中間中斷真空。因此可預防剛沈積好之層暴露於大氣下，對於後續濺鍍製程較好。
上述表1與表2之參數(t、T、p、P、U、...)係用於無機材料M2之濺鍍。用於材料M1與M3之濺鍍參數並未列出，由於此技術為此領域者所熟知。此外，吸收層(含有無機材料M2)與接觸層(含有無機材料M1或M3)間可具有中間層。
除了樣本6之所有樣本皆會產生高度結晶層。
第1圖顯示以本發明較佳實施例(範例1)沈積於一玻璃基材上之SnS結晶薄膜之XRD資料。明顯的尖峰(040)說明沈積之SnS層為高度結晶，並具有平行於基材表面之較佳相位，由僅有一(040)-尖峰存在而得知。
第2圖顯示以本發明較佳實施例(範例2)沈積於一聚丙烯(PP)基材上之SnS結晶薄膜之XRD資料。與第1圖比較，第2圖中之數據顯示出更高度之結晶層。
第3圖顯示以本發明較佳實施例(範例1)沈積之SnS薄膜。厚度僅有1μm之SnS層顯示出吸收率超過60%。高於SnS能量帶隙(band gap)(1.2eV)之能量之吸收係數高於105
/cm。
係製備具有SnS與ZnO:Al作為n-層之二極體。第4圖顯示依此製造之二極體之電流電壓特性(I/V特性)，其為太陽能電池之典型特性。
第1圖顯示以本發明較佳實施例沈積於玻璃基材上之SnS結晶薄膜之XRD資料。
第2圖顯示以本發明較佳實施例沈積於聚丙烯(PP)基材上之SnS結晶薄膜之XRD資料。
第3圖顯示以本發明較佳實施例沈積之SnS薄膜。
第4圖顯示以本發明較佳實施例沈積之SnS薄膜之電流電壓特性(I/V特性)。
Claims (11)
- 一種使用濺鍍沈積法將膜沈積至基材上之方法，- 其中該濺鍍沈積法包含直流電濺鍍沈積- 其中該膜係由至少90wt-%之具有半導體性質之無機材料M2組成- 藉此該無機材料M2之膜係以結晶結構直接沈積，使得至少50 wt-%之沈積膜具有結晶結構- 其中該用於該濺鍍沈積之來源材料(標靶)係由至少80wt-%之無機材料M2組成- 其中該無機材料M2為SnS、Sb2 S3 、Bi2 S3 、SnSe、Sb2 Se3 、Bi2 Se3 、Sb2 Te3 ，或其組合物- 其中在該沈積時間之至少90%期間，該基材之溫度T1係維持在低於60℃。
- 如申請專利範圍第1項之方法，其中該無機材料M2係選自於由SnS、Bi2 S3 或其組合物組成之族群。
- 如申請專利範圍第2項之方法，其中該無機材料M2為SnS，且該結晶結構為斜方晶系(orthorhombic)。
- 如申請專利範圍第1項之方法，其中該加工參數係經設定，使得該無機材料M2之膜係以至少60 nm/分鐘(1nm/s)之沈積速率沈積。
- 如申請專利範圍第1項之方法，其中在該膜沈積前，已經沈積另一層無機材料M1。
- 如申請專利範圍第5項之方法，其中該無機材料M1係選自於由金屬或導電性氧化物組成之族群。
- 如申請專利範圍第5項之方法，其中該無機材料M1已經以濺鍍沈積法沈積。
- 如申請專利範圍第1項之方法，其中該基材係選自於由陶瓷、玻璃、聚合物、塑膠組成之族群。
- 一種包含一基材及一沈積於基材上之膜的產品，其係由如申請專利範圍第1至8項中任一項之方法製造。
- 一種太陽能電池，包含一由如申請專利範圍第1至8項中任一項之方法製造之產品。
- 一種太陽能電池，包含一吸收層，其中該吸收層係以如申請專利範圍第1至8項中任一項之方法沈積。
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| US (1) | US20110000541A1 (zh) |
| EP (1) | EP2255022A2 (zh) |
| JP (1) | JP2011513595A (zh) |
| KR (1) | KR20100126504A (zh) |
| CN (1) | CN101983254A (zh) |
| AU (1) | AU2009224841B2 (zh) |
| BR (1) | BRPI0909342A2 (zh) |
| TW (1) | TWI397601B (zh) |
| WO (1) | WO2009112388A2 (zh) |
| ZA (1) | ZA201006895B (zh) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009031302A1 (de) | 2009-06-30 | 2011-01-05 | O-Flexx Technologies Gmbh | Verfahren zur Herstellung von thermoelektrischen Schichten |
| JP6354205B2 (ja) * | 2013-10-22 | 2018-07-11 | 住友金属鉱山株式会社 | 硫化スズ焼結体およびその製造方法 |
| CN103882383B (zh) * | 2014-01-03 | 2016-01-20 | 华东师范大学 | 一种脉冲激光沉积制备Sb2Te3薄膜的方法 |
| KR101765987B1 (ko) * | 2014-01-22 | 2017-08-08 | 한양대학교 산학협력단 | 태양 전지 및 그 제조 방법 |
| KR101503043B1 (ko) | 2014-04-14 | 2015-03-25 | 한국에너지기술연구원 | 박막 태양전지의 광흡수층의 제조방법 및 이를 이용한 박막 태양전지 |
| CN104638036B (zh) * | 2014-05-28 | 2017-11-10 | 武汉光电工业技术研究院有限公司 | 高光响应近红外光电探测器 |
| CN104152856B (zh) * | 2014-07-11 | 2017-05-31 | 西南交通大学 | 一种磁控溅射法制备Bi2Se3薄膜的方法 |
| CN105390373B (zh) * | 2015-10-27 | 2018-02-06 | 合肥工业大学 | 一种铜锑硫太阳能电池光吸收层薄膜的制备方法 |
| CN106040263B (zh) * | 2016-05-23 | 2018-08-24 | 中南大学 | 一种贵金属纳米晶负载CuSbS2纳米晶的制备方法 |
| CN110172735B (zh) * | 2019-05-10 | 2021-02-23 | 浙江师范大学 | 一种单晶硒化锡热电薄膜及其制备方法 |
| CN110203971B (zh) * | 2019-05-10 | 2021-10-29 | 金陵科技学院 | 一种CuSbS2纳米颗粒及其制备方法、应用 |
| CN111705297B (zh) * | 2020-06-12 | 2021-07-06 | 大连理工大学 | 高性能晶圆级硫化铅近红外光敏薄膜及其制备方法 |
| JP2022003675A (ja) * | 2020-06-23 | 2022-01-11 | 国立大学法人東北大学 | ｎ型ＳｎＳ薄膜、光電変換素子、太陽光電池、ｎ型ＳｎＳ薄膜の製造方法、およびｎ型ＳｎＳ薄膜の製造装置 |
| CN112481593B (zh) * | 2020-11-24 | 2024-01-26 | 福建师范大学 | 一种气固反应制备太阳能电池吸收层四硫化锑三铜薄膜的方法 |
| CN114933330A (zh) * | 2022-04-14 | 2022-08-23 | 宁波大学 | 一种富Sb的二元相变神经元基质材料及其制备方法 |
| CN114937560B (zh) * | 2022-06-08 | 2023-01-24 | 河南农业大学 | 一种基于二维材料的全固态柔性超级电容器及其制备方法 |
| CN115161610B (zh) * | 2022-09-07 | 2023-04-07 | 合肥工业大学 | 一种铜锑硒太阳能电池光吸收层薄膜的制备方法 |
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- 2009-03-02 US US12/919,794 patent/US20110000541A1/en not_active Abandoned
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| GB1506524A (en) * | 1974-06-25 | 1978-04-05 | Matsushita Electric Ind Co Ltd | Method of depositing a layer of material in crystalline form |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2011513595A (ja) | 2011-04-28 |
| AU2009224841B2 (en) | 2013-10-24 |
| TW200940732A (en) | 2009-10-01 |
| EP2255022A2 (en) | 2010-12-01 |
| ZA201006895B (en) | 2012-01-25 |
| KR20100126504A (ko) | 2010-12-01 |
| WO2009112388A2 (en) | 2009-09-17 |
| BRPI0909342A2 (pt) | 2019-02-26 |
| CN101983254A (zh) | 2011-03-02 |
| WO2009112388A3 (en) | 2009-12-30 |
| AU2009224841A1 (en) | 2009-09-17 |
| US20110000541A1 (en) | 2011-01-06 |
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