TWI397350B - 用於量產之大氣壓電漿產生裝置 - Google Patents
用於量產之大氣壓電漿產生裝置 Download PDFInfo
- Publication number
- TWI397350B TWI397350B TW098102521A TW98102521A TWI397350B TW I397350 B TWI397350 B TW I397350B TW 098102521 A TW098102521 A TW 098102521A TW 98102521 A TW98102521 A TW 98102521A TW I397350 B TWI397350 B TW I397350B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- frame
- temperature
- mass production
- atmospheric piezoelectric
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080008071A KR100975665B1 (ko) | 2008-01-25 | 2008-01-25 | 양산용 상압 플라즈마 발생장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200939905A TW200939905A (en) | 2009-09-16 |
TWI397350B true TWI397350B (zh) | 2013-05-21 |
Family
ID=41028308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098102521A TWI397350B (zh) | 2008-01-25 | 2009-01-22 | 用於量產之大氣壓電漿產生裝置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5015972B2 (ko) |
KR (1) | KR100975665B1 (ko) |
TW (1) | TWI397350B (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101103349B1 (ko) * | 2009-10-22 | 2012-01-05 | (주)에스이피 | Tft 기판의 패드영역 개방을 위한 대기압 플라즈마 에칭 장치 및 이를 이용한 대기압 플라즈마 에칭 방법 |
KR101598808B1 (ko) * | 2014-06-25 | 2016-03-02 | (주)트리비스 | 광폭 대기압 플라즈마 방전장치 |
EP3240308B1 (en) * | 2016-04-29 | 2019-11-27 | Interacoustics A/S | Microphone calibration compensation from coupler transfer function |
CN107774622A (zh) * | 2016-08-25 | 2018-03-09 | 大连旭计器有限公司 | 温度控制器的电洗净装置 |
CN110463354B (zh) * | 2017-04-04 | 2022-05-13 | 株式会社富士 | 等离子体产生系统 |
CN114286488B (zh) * | 2021-12-30 | 2023-02-28 | 南京工业大学 | 一种基于气路模块化的大气压大尺度dbd材料改性装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003100646A (ja) * | 2001-09-27 | 2003-04-04 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
JP2005023546A (ja) * | 2003-06-30 | 2005-01-27 | Sumitomo Metal Steel Products Inc | 金属管支柱 |
US6849306B2 (en) * | 2001-08-23 | 2005-02-01 | Konica Corporation | Plasma treatment method at atmospheric pressure |
TWI244112B (en) * | 2003-05-14 | 2005-11-21 | Sekisui Chemical Co Ltd | Plasma processing apparatus and method for manufacturing the same |
TWI260037B (en) * | 2003-03-06 | 2006-08-11 | Sekisui Chemical Co Ltd | Plasma processing device and method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4151749B2 (ja) | 1998-07-16 | 2008-09-17 | 東京エレクトロンAt株式会社 | プラズマ処理装置およびその方法 |
TW582050B (en) * | 1999-03-03 | 2004-04-01 | Ebara Corp | Apparatus and method for processing substrate |
KR100476136B1 (ko) * | 2002-12-02 | 2005-03-10 | 주식회사 셈테크놀러지 | 대기압 플라즈마를 이용한 표면처리장치 |
JP3934101B2 (ja) * | 2003-11-06 | 2007-06-20 | 積水化学工業株式会社 | プラズマ化用の電極およびプラズマ処理装置 |
KR100529299B1 (ko) * | 2003-05-09 | 2005-11-17 | 학교법인 한양학원 | 상압 플라즈마 분사장치 |
JP2007227068A (ja) * | 2006-02-22 | 2007-09-06 | Noritsu Koki Co Ltd | ワーク処理装置 |
JP4724572B2 (ja) | 2006-02-28 | 2011-07-13 | 株式会社サイアン | ワーク処理装置 |
-
2008
- 2008-01-25 KR KR1020080008071A patent/KR100975665B1/ko not_active IP Right Cessation
-
2009
- 2009-01-22 TW TW098102521A patent/TWI397350B/zh not_active IP Right Cessation
- 2009-01-22 JP JP2009011822A patent/JP5015972B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6849306B2 (en) * | 2001-08-23 | 2005-02-01 | Konica Corporation | Plasma treatment method at atmospheric pressure |
JP2003100646A (ja) * | 2001-09-27 | 2003-04-04 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
TWI260037B (en) * | 2003-03-06 | 2006-08-11 | Sekisui Chemical Co Ltd | Plasma processing device and method |
TWI244112B (en) * | 2003-05-14 | 2005-11-21 | Sekisui Chemical Co Ltd | Plasma processing apparatus and method for manufacturing the same |
JP2005023546A (ja) * | 2003-06-30 | 2005-01-27 | Sumitomo Metal Steel Products Inc | 金属管支柱 |
Also Published As
Publication number | Publication date |
---|---|
JP5015972B2 (ja) | 2012-09-05 |
KR20090081898A (ko) | 2009-07-29 |
KR100975665B1 (ko) | 2010-08-17 |
TW200939905A (en) | 2009-09-16 |
JP2009172595A (ja) | 2009-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI397350B (zh) | 用於量產之大氣壓電漿產生裝置 | |
CN101527262B (zh) | 电极单元、基板处理装置及电极单元的温度控制方法 | |
TWI434369B (zh) | A substrate stage and a substrate processing device | |
TWI555118B (zh) | 用於晶圓背側電漿輔助釋放作用的方法和靜電卡盤組件 | |
RU2420044C2 (ru) | Устройство для плазменной обработки | |
TWI660421B (zh) | 基板處理方法及基板處理裝置 | |
JP2010118551A (ja) | 静電チャック及び基板処理装置 | |
TW201414870A (zh) | 用於半導體材料處理設備之具有低微塵粒特性的噴淋頭電極與噴淋頭電極組件 | |
KR20080069132A (ko) | 기판 처리 장치 및 포커스 링 | |
JP2010103455A (ja) | プラズマ処理装置 | |
TWI494174B (zh) | 基板表面處理設備 | |
US20150352608A1 (en) | Substrate treating apparatus and method for cleaning the same | |
CN105393333A (zh) | 用于薄膜处理应用的清洁方法和用于所述清洁方法中的装置 | |
JP5654083B2 (ja) | 静電チャック及び基板処理装置 | |
JP2007026981A (ja) | プラズマ処理装置 | |
TW201532185A (zh) | 等離子體處理裝置及其靜電卡盤 | |
KR102193372B1 (ko) | 유도가열 방식을 이용한 소형 스팀 클리너 | |
KR101453860B1 (ko) | 플라즈마 히터 | |
KR102086539B1 (ko) | 균일한 증기를 분사하는 증기 발생 장치 | |
TW591714B (en) | Cleaning apparatus using atmospheric pressure plasma | |
KR100488361B1 (ko) | 대기압 저온 평판 플라즈마 발생장치 | |
KR100766771B1 (ko) | 초음파 장치를 구비한 플라즈마 장치 및 그 표면처리 방법 | |
KR100760651B1 (ko) | 처리가스 공급관을 구비하는 기판 표면처리장치 | |
KR102144362B1 (ko) | 스팀발생장치를 이용한 스팀 세정 시스템 | |
KR102116995B1 (ko) | 유도가열 방식을 이용한 소형 스팀 클리너 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |