TWI394820B - 化學機械研磨用組成物及其相關方法 - Google Patents
化學機械研磨用組成物及其相關方法 Download PDFInfo
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- TWI394820B TWI394820B TW094121113A TW94121113A TWI394820B TW I394820 B TWI394820 B TW I394820B TW 094121113 A TW094121113 A TW 094121113A TW 94121113 A TW94121113 A TW 94121113A TW I394820 B TWI394820 B TW I394820B
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- Prior art keywords
- acid
- composition
- weight
- copolymer
- methacrylic
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- 239000002184 metal Substances 0.000 claims description 43
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- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 16
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- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical group OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Chemical class [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 101150089254 epd2 gene Proteins 0.000 description 1
- DUYAAUVXQSMXQP-UHFFFAOYSA-N ethanethioic S-acid Chemical compound CC(S)=O DUYAAUVXQSMXQP-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 235000019314 gum ghatti Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical class Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-N iodic acid Chemical class OI(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-N 0.000 description 1
- 159000000014 iron salts Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- MMIPFLVOWGHZQD-UHFFFAOYSA-N manganese(3+) Chemical compound [Mn+3] MMIPFLVOWGHZQD-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000000391 smoking effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/882,567 US7384871B2 (en) | 2004-07-01 | 2004-07-01 | Chemical mechanical polishing compositions and methods relating thereto |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200613521A TW200613521A (en) | 2006-05-01 |
| TWI394820B true TWI394820B (zh) | 2013-05-01 |
Family
ID=35512461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094121113A TWI394820B (zh) | 2004-07-01 | 2005-06-24 | 化學機械研磨用組成物及其相關方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7384871B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2006019746A (cg-RX-API-DMAC7.html) |
| CN (1) | CN100355819C (cg-RX-API-DMAC7.html) |
| TW (1) | TWI394820B (cg-RX-API-DMAC7.html) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7435356B2 (en) * | 2004-11-24 | 2008-10-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Abrasive-free chemical mechanical polishing compositions and methods relating thereto |
| KR20070120609A (ko) * | 2005-04-15 | 2007-12-24 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 마이크로전자 소자로부터 이온 주입 포토레지스트층을세정하기 위한 배합물 |
| JP2007088302A (ja) * | 2005-09-22 | 2007-04-05 | Fujifilm Corp | 金属用研磨液及び化学的機械的研磨方法 |
| KR100786949B1 (ko) * | 2005-12-08 | 2007-12-17 | 주식회사 엘지화학 | 연마 선택도 조절 보조제 및 이를 함유한 ｃｍｐ 슬러리 |
| US20070225187A1 (en) * | 2006-03-22 | 2007-09-27 | Fujifilm Corporation | Cleaning solution for substrate for use in semiconductor device and cleaning method using the same |
| US20100015807A1 (en) * | 2006-12-22 | 2010-01-21 | Techno Semichem Co., Ltd. | Chemical Mechanical Polishing Composition for Copper Comprising Zeolite |
| KR100949250B1 (ko) | 2007-10-10 | 2010-03-25 | 제일모직주식회사 | 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
| US20090215266A1 (en) * | 2008-02-22 | 2009-08-27 | Thomas Terence M | Polishing Copper-Containing patterned wafers |
| EP2273537A4 (en) * | 2008-04-15 | 2012-07-25 | Hitachi Chemical Co Ltd | POLISHING SOLUTION FOR METALLIC FILMS AND METHOD OF POLISHING USING THE SAME |
| US8540893B2 (en) * | 2008-08-04 | 2013-09-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| KR101674564B1 (ko) * | 2009-01-05 | 2016-11-09 | 에프엔에스테크 주식회사 | 다층 화학-기계적 평탄화 패드 |
| US8536106B2 (en) * | 2010-04-14 | 2013-09-17 | Ecolab Usa Inc. | Ferric hydroxycarboxylate as a builder |
| US8435896B2 (en) | 2011-03-03 | 2013-05-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable chemical mechanical polishing composition and methods relating thereto |
| US8440097B2 (en) | 2011-03-03 | 2013-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition |
| JP6029895B2 (ja) * | 2012-08-31 | 2016-11-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び基板の製造方法 |
| US9299585B2 (en) | 2014-07-28 | 2016-03-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing substrates containing ruthenium and copper |
| WO2018058396A1 (en) * | 2016-09-29 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| WO2018058395A1 (en) * | 2016-09-29 | 2018-04-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| JP6936315B2 (ja) * | 2016-09-29 | 2021-09-15 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | タングステンのためのケミカルメカニカルポリッシング法 |
| KR102679492B1 (ko) * | 2018-11-15 | 2024-07-01 | 솔브레인 주식회사 | 연마 첨가제 조성물, 연마 슬러리 조성물 및 반도체 소자의 절연막의 연마 방법 |
| CN114916240B (zh) * | 2020-12-10 | 2025-11-21 | 株式会社日立高新技术 | 半导体制造方法和半导体制造装置 |
| CN114561187B (zh) * | 2022-03-07 | 2022-10-21 | 山东麦丰新材料科技股份有限公司 | 一种环保型乳化精磨液及其制备方法 |
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| JP2002134442A (ja) * | 2000-10-26 | 2002-05-10 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| JP2003068683A (ja) * | 2001-08-22 | 2003-03-07 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| US20040065020A1 (en) * | 2001-05-18 | 2004-04-08 | Barry Weinstein | Chemical mechanical polishing compositions and methods relating thereto |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3371775B2 (ja) * | 1997-10-31 | 2003-01-27 | 株式会社日立製作所 | 研磨方法 |
| US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| EP1102821A4 (en) | 1998-06-10 | 2004-05-19 | Rodel Inc | COMPOSITION AND METHOD FOR CHEMICAL / MECHANICAL POLISHING |
| JP4095731B2 (ja) * | 1998-11-09 | 2008-06-04 | 株式会社ルネサステクノロジ | 半導体装置の製造方法及び半導体装置 |
| JP4538109B2 (ja) * | 1999-02-18 | 2010-09-08 | 株式会社トッパンＴｄｋレーベル | 化学機械研磨組成物 |
| TW501197B (en) | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
| KR20020027571A (ko) | 1999-08-24 | 2002-04-13 | 갤반 마틴 | 절연체와 금속의 ｃｍｐ용 조성물 및 이에 관련된 방법 |
| US7232529B1 (en) | 1999-08-26 | 2007-06-19 | Hitachi Chemical Company, Ltd. | Polishing compound for chemimechanical polishing and polishing method |
| JP2002050595A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 研磨方法、配線形成方法及び半導体装置の製造方法 |
| US6936541B2 (en) * | 2000-09-20 | 2005-08-30 | Rohn And Haas Electronic Materials Cmp Holdings, Inc. | Method for planarizing metal interconnects |
| US6605537B2 (en) * | 2000-10-27 | 2003-08-12 | Rodel Holdings, Inc. | Polishing of metal substrates |
| JP3768402B2 (ja) * | 2000-11-24 | 2006-04-19 | Ｎｅｃエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| TW584658B (en) * | 2001-04-12 | 2004-04-21 | Rodel Inc | Polishing composition having a surfactant |
| DE60311569T2 (de) * | 2002-03-25 | 2007-11-15 | Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark | Tantalbarriere-Entfernungslösung |
| US20030219982A1 (en) * | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US20050104048A1 (en) * | 2003-11-13 | 2005-05-19 | Thomas Terence M. | Compositions and methods for polishing copper |
| US20050136671A1 (en) * | 2003-12-22 | 2005-06-23 | Goldberg Wendy B. | Compositions and methods for low downforce pressure polishing of copper |
-
2004
- 2004-07-01 US US10/882,567 patent/US7384871B2/en not_active Expired - Lifetime
-
2005
- 2005-06-24 CN CNB2005100823705A patent/CN100355819C/zh not_active Expired - Fee Related
- 2005-06-24 TW TW094121113A patent/TWI394820B/zh not_active IP Right Cessation
- 2005-07-01 JP JP2005193258A patent/JP2006019746A/ja active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002134442A (ja) * | 2000-10-26 | 2002-05-10 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
| US20040065020A1 (en) * | 2001-05-18 | 2004-04-08 | Barry Weinstein | Chemical mechanical polishing compositions and methods relating thereto |
| JP2003068683A (ja) * | 2001-08-22 | 2003-03-07 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7384871B2 (en) | 2008-06-10 |
| US20060000150A1 (en) | 2006-01-05 |
| CN100355819C (zh) | 2007-12-19 |
| JP2006019746A (ja) | 2006-01-19 |
| TW200613521A (en) | 2006-05-01 |
| CN1715310A (zh) | 2006-01-04 |
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| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |