TWI393186B - 用以安排金屬沈積用之基板表面的方法及整合之系統 - Google Patents

用以安排金屬沈積用之基板表面的方法及整合之系統 Download PDF

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Publication number
TWI393186B
TWI393186B TW96131990A TW96131990A TWI393186B TW I393186 B TWI393186 B TW I393186B TW 96131990 A TW96131990 A TW 96131990A TW 96131990 A TW96131990 A TW 96131990A TW I393186 B TWI393186 B TW I393186B
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TW
Taiwan
Prior art keywords
substrate
copper
metal
vacuum
layer
Prior art date
Application number
TW96131990A
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English (en)
Chinese (zh)
Other versions
TW200832556A (en
Inventor
Yezdi Dordi
Fritz C Redeker
John Boyd
William Thie
Tiruchirapalli Arunagiri
Arthur M Howald
Hyungsuk Alexander Yoon
Johan Vertommen
Original Assignee
Lam Res Corp
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Publication date
Priority claimed from US11/513,634 external-priority patent/US8771804B2/en
Priority claimed from US11/513,446 external-priority patent/US8747960B2/en
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200832556A publication Critical patent/TW200832556A/zh
Application granted granted Critical
Publication of TWI393186B publication Critical patent/TWI393186B/zh

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
TW96131990A 2006-08-30 2007-08-29 用以安排金屬沈積用之基板表面的方法及整合之系統 TWI393186B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/513,634 US8771804B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a copper surface for selective metal deposition
US11/513,446 US8747960B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
US11/514,038 US8241701B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a barrier surface for copper deposition

Publications (2)

Publication Number Publication Date
TW200832556A TW200832556A (en) 2008-08-01
TWI393186B true TWI393186B (zh) 2013-04-11

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TW96131990A TWI393186B (zh) 2006-08-30 2007-08-29 用以安排金屬沈積用之基板表面的方法及整合之系統

Country Status (5)

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JP (2) JP5489717B2 (ja)
CN (2) CN103107120B (ja)
MY (2) MY171542A (ja)
SG (1) SG174752A1 (ja)
TW (1) TWI393186B (ja)

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US20090269507A1 (en) 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US8227344B2 (en) * 2010-02-26 2012-07-24 Tokyo Electron Limited Hybrid in-situ dry cleaning of oxidized surface layers
JP2012054306A (ja) * 2010-08-31 2012-03-15 Tokyo Electron Ltd 半導体装置の製造方法
CN103081089A (zh) * 2010-08-31 2013-05-01 东京毅力科创株式会社 半导体装置的制造方法
JP5560144B2 (ja) * 2010-08-31 2014-07-23 東京エレクトロン株式会社 半導体装置の製造方法
CN102468265A (zh) * 2010-11-01 2012-05-23 中芯国际集成电路制造(上海)有限公司 连接插塞及其制作方法
US8603913B1 (en) * 2012-12-20 2013-12-10 Lam Research Corporation Porous dielectrics K value restoration by thermal treatment and or solvent treatment
US9040385B2 (en) 2013-07-24 2015-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for cleaning substrate surface for hybrid bonding
CN105682856A (zh) * 2013-10-22 2016-06-15 东曹Smd有限公司 经优化的纹理化表面及优化的方法
EP3155655B1 (en) * 2014-06-16 2021-05-12 Intel Corporation Selective diffusion barrier between metals of an integrated circuit device
US9997405B2 (en) * 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
KR20230026514A (ko) 2016-10-02 2023-02-24 어플라이드 머티어리얼스, 인코포레이티드 루테늄 라이너로 구리 전자 이동을 개선하기 위한 도핑된 선택적 금속 캡
JP6842159B2 (ja) * 2016-12-13 2021-03-17 サムコ株式会社 プラズマ処理方法
US10438846B2 (en) 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
CN113166929A (zh) 2018-12-05 2021-07-23 朗姆研究公司 无空隙低应力填充
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
TW202117075A (zh) * 2019-09-25 2021-05-01 日商東京威力科創股份有限公司 基板液處理方法及基板液處理裝置
US11555250B2 (en) * 2020-04-29 2023-01-17 Applied Materials, Inc. Organic contamination free surface machining

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US20020001929A1 (en) * 2000-04-25 2002-01-03 Biberger Maximilian A. Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6365516B1 (en) * 2000-01-14 2002-04-02 Advanced Micro Devices, Inc. Advanced cobalt silicidation with in-situ hydrogen plasma clean
US6475893B2 (en) * 2001-03-30 2002-11-05 International Business Machines Corporation Method for improved fabrication of salicide structures
US6638564B2 (en) * 2000-04-10 2003-10-28 Sony Corporation Method of electroless plating and electroless plating apparatus
TW200403768A (en) * 2002-05-03 2004-03-01 Intel Corp Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures
US20050106865A1 (en) * 2001-09-26 2005-05-19 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
TW200526815A (en) * 2003-11-05 2005-08-16 Freescale Semiconductor Inc Compositions and methods for the electroless deposition of NiFe on a work piece

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US6144099A (en) * 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
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JP4503356B2 (ja) * 2004-06-02 2010-07-14 東京エレクトロン株式会社 基板処理方法および半導体装置の製造方法

Patent Citations (7)

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Publication number Priority date Publication date Assignee Title
US6365516B1 (en) * 2000-01-14 2002-04-02 Advanced Micro Devices, Inc. Advanced cobalt silicidation with in-situ hydrogen plasma clean
US6638564B2 (en) * 2000-04-10 2003-10-28 Sony Corporation Method of electroless plating and electroless plating apparatus
US20020001929A1 (en) * 2000-04-25 2002-01-03 Biberger Maximilian A. Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6475893B2 (en) * 2001-03-30 2002-11-05 International Business Machines Corporation Method for improved fabrication of salicide structures
US20050106865A1 (en) * 2001-09-26 2005-05-19 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
TW200403768A (en) * 2002-05-03 2004-03-01 Intel Corp Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures
TW200526815A (en) * 2003-11-05 2005-08-16 Freescale Semiconductor Inc Compositions and methods for the electroless deposition of NiFe on a work piece

Also Published As

Publication number Publication date
JP2010503205A (ja) 2010-01-28
SG174752A1 (en) 2011-10-28
JP5489717B2 (ja) 2014-05-14
CN101558186A (zh) 2009-10-14
JP2014099627A (ja) 2014-05-29
CN103107120A (zh) 2013-05-15
JP5820870B2 (ja) 2015-11-24
CN101558186B (zh) 2015-01-14
MY171542A (en) 2019-10-17
CN103107120B (zh) 2016-06-08
MY148605A (en) 2013-05-15
TW200832556A (en) 2008-08-01

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