TWI390584B - 真空電漿處理器 - Google Patents

真空電漿處理器 Download PDF

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Publication number
TWI390584B
TWI390584B TW094146126A TW94146126A TWI390584B TW I390584 B TWI390584 B TW I390584B TW 094146126 A TW094146126 A TW 094146126A TW 94146126 A TW94146126 A TW 94146126A TW I390584 B TWI390584 B TW I390584B
Authority
TW
Taiwan
Prior art keywords
plasma
region
vacuum plasma
plasma processor
electrical conductor
Prior art date
Application number
TW094146126A
Other languages
English (en)
Chinese (zh)
Other versions
TW200703410A (en
Inventor
Andras Kuthi
Jisoo Kim
Eric Lenz
Rajindar Dhindsa
Lumin Li
Reza Sadjadi
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200703410A publication Critical patent/TW200703410A/zh
Application granted granted Critical
Publication of TWI390584B publication Critical patent/TWI390584B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW094146126A 2004-12-30 2005-12-23 真空電漿處理器 TWI390584B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/024,978 US7632375B2 (en) 2004-12-30 2004-12-30 Electrically enhancing the confinement of plasma

Publications (2)

Publication Number Publication Date
TW200703410A TW200703410A (en) 2007-01-16
TWI390584B true TWI390584B (zh) 2013-03-21

Family

ID=36088342

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146126A TWI390584B (zh) 2004-12-30 2005-12-23 真空電漿處理器

Country Status (6)

Country Link
US (1) US7632375B2 (cg-RX-API-DMAC7.html)
JP (1) JP5183213B2 (cg-RX-API-DMAC7.html)
KR (1) KR101209536B1 (cg-RX-API-DMAC7.html)
CN (1) CN101088139B (cg-RX-API-DMAC7.html)
TW (1) TWI390584B (cg-RX-API-DMAC7.html)
WO (1) WO2006074050A2 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660395B (zh) * 2016-12-27 2019-05-21 大陸商中微半導體設備（上海）股份有限公司 均勻抽真空的雙工位真空處理器

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JP3992018B2 (ja) * 2003-07-23 2007-10-17 松下電器産業株式会社 プラズマ処理装置
US8253057B1 (en) * 2004-09-03 2012-08-28 Jack Hunt System and method for plasma generation
US8268116B2 (en) 2007-06-14 2012-09-18 Lam Research Corporation Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP5197036B2 (ja) * 2008-01-23 2013-05-15 株式会社ピュアロンジャパン プラズマ発生装置
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
JP5496568B2 (ja) 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5597463B2 (ja) 2010-07-05 2014-10-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2022159804A1 (en) * 2021-01-23 2022-07-28 Sheperak Thomas J Plasma gas generator
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
WO2013078098A1 (en) * 2011-11-23 2013-05-30 Lam Research Corporation Multi zone gas injection upper electrode system
CN103187234B (zh) * 2011-12-30 2016-03-16 中微半导体设备(上海)有限公司 一种用于等离子体处理装置的可调节约束装置
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6539113B2 (ja) 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
EP3550678B1 (en) * 2018-04-04 2020-02-26 Kern Technologies, LLC Folded slab waveguide laser
KR102098002B1 (ko) * 2018-10-19 2020-04-07 세메스 주식회사 기판 처리 장치
KR102097984B1 (ko) * 2018-10-19 2020-05-26 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102256216B1 (ko) * 2019-06-27 2021-05-26 세메스 주식회사 플라즈마 처리 장치 및 플라즈마 제어 방법
KR102279639B1 (ko) * 2019-07-09 2021-07-20 한양대학교 산학협력단 기판 처리 장치
JP2022044209A (ja) * 2020-09-07 2022-03-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN114566415A (zh) * 2020-11-27 2022-05-31 中微半导体设备(上海)股份有限公司 等离子体处理装置
JP7534235B2 (ja) * 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
CN116614926A (zh) * 2022-02-09 2023-08-18 中微半导体设备(上海)股份有限公司 等离子体约束系统及方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660395B (zh) * 2016-12-27 2019-05-21 大陸商中微半導體設備（上海）股份有限公司 均勻抽真空的雙工位真空處理器

Also Published As

Publication number Publication date
US7632375B2 (en) 2009-12-15
KR101209536B1 (ko) 2012-12-07
KR20070089838A (ko) 2007-09-03
WO2006074050A3 (en) 2007-04-19
WO2006074050A2 (en) 2006-07-13
JP5183213B2 (ja) 2013-04-17
TW200703410A (en) 2007-01-16
CN101088139A (zh) 2007-12-12
US20090165954A1 (en) 2009-07-02
CN101088139B (zh) 2012-06-27
JP2008527634A (ja) 2008-07-24

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