CN101088139B - 电增强等离子体约束 - Google Patents

电增强等离子体约束 Download PDF

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Publication number
CN101088139B
CN101088139B CN2005800446238A CN200580044623A CN101088139B CN 101088139 B CN101088139 B CN 101088139B CN 2005800446238 A CN2005800446238 A CN 2005800446238A CN 200580044623 A CN200580044623 A CN 200580044623A CN 101088139 B CN101088139 B CN 101088139B
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China
Prior art keywords
plasma
confinement structure
region
conductor
vacuum plasma
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Expired - Fee Related
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CN2005800446238A
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English (en)
Chinese (zh)
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CN101088139A (zh
Inventor
A·库提
J·金
E·兰斯
R·迪恩德萨
L·李
R·萨贾迪
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
CN2005800446238A 2004-12-30 2005-12-29 电增强等离子体约束 Expired - Fee Related CN101088139B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/024,978 US7632375B2 (en) 2004-12-30 2004-12-30 Electrically enhancing the confinement of plasma
US11/024,978 2004-12-30
PCT/US2005/047385 WO2006074050A2 (en) 2004-12-30 2005-12-29 Electrically enhancing the confinement of plasma

Publications (2)

Publication Number Publication Date
CN101088139A CN101088139A (zh) 2007-12-12
CN101088139B true CN101088139B (zh) 2012-06-27

Family

ID=36088342

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800446238A Expired - Fee Related CN101088139B (zh) 2004-12-30 2005-12-29 电增强等离子体约束

Country Status (6)

Country Link
US (1) US7632375B2 (cg-RX-API-DMAC7.html)
JP (1) JP5183213B2 (cg-RX-API-DMAC7.html)
KR (1) KR101209536B1 (cg-RX-API-DMAC7.html)
CN (1) CN101088139B (cg-RX-API-DMAC7.html)
TW (1) TWI390584B (cg-RX-API-DMAC7.html)
WO (1) WO2006074050A2 (cg-RX-API-DMAC7.html)

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US8253057B1 (en) * 2004-09-03 2012-08-28 Jack Hunt System and method for plasma generation
US8268116B2 (en) 2007-06-14 2012-09-18 Lam Research Corporation Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP5197036B2 (ja) * 2008-01-23 2013-05-15 株式会社ピュアロンジャパン プラズマ発生装置
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
JP5496568B2 (ja) 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5597463B2 (ja) 2010-07-05 2014-10-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2022159804A1 (en) * 2021-01-23 2022-07-28 Sheperak Thomas J Plasma gas generator
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
WO2013078098A1 (en) * 2011-11-23 2013-05-30 Lam Research Corporation Multi zone gas injection upper electrode system
CN103187234B (zh) * 2011-12-30 2016-03-16 中微半导体设备(上海)有限公司 一种用于等离子体处理装置的可调节约束装置
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6539113B2 (ja) 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN108242380B (zh) * 2016-12-27 2019-09-06 中微半导体设备(上海)股份有限公司 一种均匀抽真空的双工位真空处理器
EP3550678B1 (en) * 2018-04-04 2020-02-26 Kern Technologies, LLC Folded slab waveguide laser
KR102098002B1 (ko) * 2018-10-19 2020-04-07 세메스 주식회사 기판 처리 장치
KR102097984B1 (ko) * 2018-10-19 2020-05-26 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102256216B1 (ko) * 2019-06-27 2021-05-26 세메스 주식회사 플라즈마 처리 장치 및 플라즈마 제어 방법
KR102279639B1 (ko) * 2019-07-09 2021-07-20 한양대학교 산학협력단 기판 처리 장치
JP2022044209A (ja) * 2020-09-07 2022-03-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN114566415A (zh) * 2020-11-27 2022-05-31 中微半导体设备(上海)股份有限公司 等离子体处理装置
JP7534235B2 (ja) * 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
CN116614926A (zh) * 2022-02-09 2023-08-18 中微半导体设备(上海)股份有限公司 等离子体约束系统及方法

Citations (2)

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US5316645A (en) * 1990-08-07 1994-05-31 Canon Kabushiki Kaisha Plasma processing apparatus
CN1539156A (zh) * 2001-08-08 2004-10-20 ��ķ�о����޹�˾ 带有独立的等离子体密度/化学性质和离子能量控制的双频等离子体蚀刻反应器

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JPH0645094A (ja) * 1992-03-31 1994-02-18 Matsushita Electric Ind Co Ltd プラズマ発生方法およびその装置
JPH0645096A (ja) * 1992-03-31 1994-02-18 Matsushita Electric Ind Co Ltd プラズマ発生方法およびその装置
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JPH06124794A (ja) * 1992-10-14 1994-05-06 Kobe Steel Ltd プラズマ発生装置
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JP3151596B2 (ja) * 1995-07-20 2001-04-03 東京エレクトロン株式会社 プラズマ処理方法およびその装置
US5846883A (en) * 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5981899A (en) * 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
US5904800A (en) 1997-02-03 1999-05-18 Motorola, Inc. Semiconductor wafer processing chamber for reducing particles deposited onto the semiconductor wafer
US6599399B2 (en) * 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US6184489B1 (en) 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6019060A (en) 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US5998932A (en) 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316645A (en) * 1990-08-07 1994-05-31 Canon Kabushiki Kaisha Plasma processing apparatus
CN1539156A (zh) * 2001-08-08 2004-10-20 ��ķ�о����޹�˾ 带有独立的等离子体密度/化学性质和离子能量控制的双频等离子体蚀刻反应器

Also Published As

Publication number Publication date
US7632375B2 (en) 2009-12-15
KR101209536B1 (ko) 2012-12-07
KR20070089838A (ko) 2007-09-03
WO2006074050A3 (en) 2007-04-19
WO2006074050A2 (en) 2006-07-13
JP5183213B2 (ja) 2013-04-17
TW200703410A (en) 2007-01-16
CN101088139A (zh) 2007-12-12
US20090165954A1 (en) 2009-07-02
TWI390584B (zh) 2013-03-21
JP2008527634A (ja) 2008-07-24

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Granted publication date: 20120627

Termination date: 20171229