TWI389169B - Plasma processing device - Google Patents

Plasma processing device Download PDF

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Publication number
TWI389169B
TWI389169B TW095117352A TW95117352A TWI389169B TW I389169 B TWI389169 B TW I389169B TW 095117352 A TW095117352 A TW 095117352A TW 95117352 A TW95117352 A TW 95117352A TW I389169 B TWI389169 B TW I389169B
Authority
TW
Taiwan
Prior art keywords
plasma
gas supply
processing
gas
supply plate
Prior art date
Application number
TW095117352A
Other languages
English (en)
Chinese (zh)
Other versions
TW200705515A (en
Inventor
森田治
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200705515A publication Critical patent/TW200705515A/zh
Application granted granted Critical
Publication of TWI389169B publication Critical patent/TWI389169B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW095117352A 2005-05-17 2006-05-16 Plasma processing device TWI389169B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005143674A JP4664119B2 (ja) 2005-05-17 2005-05-17 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200705515A TW200705515A (en) 2007-02-01
TWI389169B true TWI389169B (zh) 2013-03-11

Family

ID=37431104

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095117352A TWI389169B (zh) 2005-05-17 2006-05-16 Plasma processing device

Country Status (6)

Country Link
US (1) US20090065147A1 (enExample)
JP (1) JP4664119B2 (enExample)
KR (1) KR100980519B1 (enExample)
CN (2) CN101982563A (enExample)
TW (1) TWI389169B (enExample)
WO (1) WO2006123526A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP2008262968A (ja) * 2007-04-10 2008-10-30 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
US8021975B2 (en) 2007-07-24 2011-09-20 Tokyo Electron Limited Plasma processing method for forming a film and an electronic component manufactured by the method
US8197913B2 (en) 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
CN101981669A (zh) * 2008-03-24 2011-02-23 东京毅力科创株式会社 簇射极板以及利用簇射极板的等离子体处理装置
JP5222040B2 (ja) * 2008-06-25 2013-06-26 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP5454575B2 (ja) * 2009-09-17 2014-03-26 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置用ガス供給機構
EP2481831A1 (en) * 2009-09-25 2012-08-01 Kyocera Corporation Deposited film formation device and deposited film formation method
WO2011070945A1 (ja) * 2009-12-11 2011-06-16 株式会社アルバック 薄膜製造装置、薄膜の製造方法、及び半導体装置の製造方法
JP5941653B2 (ja) * 2011-02-24 2016-06-29 東京エレクトロン株式会社 シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置
KR101295794B1 (ko) * 2011-05-31 2013-08-09 세메스 주식회사 기판 처리 장치
US20130284092A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Faceplate having regions of differing emissivity
CN104264129B (zh) * 2014-10-20 2016-09-28 佛山市中山大学研究院 一种mocvd设备的进气装置及mocvd设备
JP6764771B2 (ja) * 2016-11-28 2020-10-07 東京エレクトロン株式会社 基板処理装置及び遮熱板
JP7035581B2 (ja) 2017-03-29 2022-03-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法。
KR102096700B1 (ko) 2017-03-29 2020-04-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
JP7008497B2 (ja) * 2017-12-22 2022-01-25 東京エレクトロン株式会社 基板処理装置および温度制御方法
KR102204883B1 (ko) * 2019-05-09 2021-01-19 세메스 주식회사 기판 처리 장치

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Publication number Priority date Publication date Assignee Title
JPH0354498A (ja) * 1989-07-24 1991-03-08 Hitachi Ltd 高熱負荷受熱板
JP3100236B2 (ja) * 1992-08-03 2000-10-16 東京エレクトロン株式会社 プラズマ処理装置
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
JPH07180061A (ja) * 1993-12-22 1995-07-18 Canon Inc マイクロ波プラズマｃｖｄ法および装置
US6497783B1 (en) * 1997-05-22 2002-12-24 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
JPH11326566A (ja) * 1998-05-20 1999-11-26 Mitsubishi Heavy Ind Ltd 核融合装置高熱負荷構造
US6232248B1 (en) * 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
JP2939547B1 (ja) * 1998-09-02 1999-08-25 核融合科学研究所長 アーマタイル・ヒートシンク一体型除熱装置
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
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US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
KR100434487B1 (ko) * 2001-01-17 2004-06-05 삼성전자주식회사 샤워 헤드 및 이를 포함하는 박막 형성 장비
JP4713747B2 (ja) * 2001-01-19 2011-06-29 キヤノンアネルバ株式会社 薄膜形成装置
JP2002270599A (ja) * 2001-03-13 2002-09-20 Canon Inc プラズマ処理装置
JP4402860B2 (ja) * 2001-03-28 2010-01-20 忠弘 大見 プラズマ処理装置
KR100501778B1 (ko) * 2001-03-28 2005-07-20 동경 엘렉트론 주식회사 플라즈마 처리 장치
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JP3991315B2 (ja) * 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP4369264B2 (ja) * 2003-03-25 2009-11-18 東京エレクトロン株式会社 プラズマ成膜方法
JP4221526B2 (ja) * 2003-03-26 2009-02-12 キヤノンアネルバ株式会社 金属酸化物を基板表面上に形成する成膜方法
US7078341B2 (en) * 2003-09-30 2006-07-18 Tokyo Electron Limited Method of depositing metal layers from metal-carbonyl precursors

Also Published As

Publication number Publication date
KR20080017361A (ko) 2008-02-26
KR100980519B1 (ko) 2010-09-06
JP2006324023A (ja) 2006-11-30
TW200705515A (en) 2007-02-01
JP4664119B2 (ja) 2011-04-06
CN101218860A (zh) 2008-07-09
CN101982563A (zh) 2011-03-02
US20090065147A1 (en) 2009-03-12
WO2006123526A1 (ja) 2006-11-23

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