TWI388691B - 氣相沉積之二維孔陣列 - Google Patents

氣相沉積之二維孔陣列 Download PDF

Info

Publication number
TWI388691B
TWI388691B TW096101619A TW96101619A TWI388691B TW I388691 B TWI388691 B TW I388691B TW 096101619 A TW096101619 A TW 096101619A TW 96101619 A TW96101619 A TW 96101619A TW I388691 B TWI388691 B TW I388691B
Authority
TW
Taiwan
Prior art keywords
holes
substrate
ranging
apertures
deposition
Prior art date
Application number
TW096101619A
Other languages
English (en)
Chinese (zh)
Other versions
TW200732506A (en
Inventor
Jeremy M Grace
Michael Long
Original Assignee
Global Oled Technology Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Global Oled Technology Llc filed Critical Global Oled Technology Llc
Publication of TW200732506A publication Critical patent/TW200732506A/zh
Application granted granted Critical
Publication of TWI388691B publication Critical patent/TWI388691B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
TW096101619A 2006-01-17 2007-01-16 氣相沉積之二維孔陣列 TWI388691B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/333,111 US7645483B2 (en) 2006-01-17 2006-01-17 Two-dimensional aperture array for vapor deposition

Publications (2)

Publication Number Publication Date
TW200732506A TW200732506A (en) 2007-09-01
TWI388691B true TWI388691B (zh) 2013-03-11

Family

ID=37913591

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101619A TWI388691B (zh) 2006-01-17 2007-01-16 氣相沉積之二維孔陣列

Country Status (6)

Country Link
US (1) US7645483B2 (enExample)
EP (1) EP1977025B1 (enExample)
JP (1) JP5260312B2 (enExample)
KR (2) KR101326147B1 (enExample)
TW (1) TWI388691B (enExample)
WO (1) WO2007084275A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070221128A1 (en) * 2006-03-23 2007-09-27 Soo Young Choi Method and apparatus for improving uniformity of large-area substrates
EP2425470A2 (en) * 2009-05-01 2012-03-07 Kateeva, Inc. Method and apparatus for organic vapor printing
TWI472639B (zh) 2009-05-22 2015-02-11 Samsung Display Co Ltd 薄膜沉積設備
TWI475124B (zh) * 2009-05-22 2015-03-01 Samsung Display Co Ltd 薄膜沉積設備
KR20130048677A (ko) * 2009-05-26 2013-05-10 엥떼르위니베르시테르 미크로엘렉트로니카 쌍트륌 베제드두블르베 기판에 유기 재료 층을 형성시키는 방법
US8882920B2 (en) 2009-06-05 2014-11-11 Samsung Display Co., Ltd. Thin film deposition apparatus
US8882921B2 (en) * 2009-06-08 2014-11-11 Samsung Display Co., Ltd. Thin film deposition apparatus
KR101074792B1 (ko) * 2009-06-12 2011-10-19 삼성모바일디스플레이주식회사 박막 증착 장치
KR101117719B1 (ko) * 2009-06-24 2012-03-08 삼성모바일디스플레이주식회사 박막 증착 장치
KR101127575B1 (ko) * 2009-08-10 2012-03-23 삼성모바일디스플레이주식회사 증착 가림막을 가지는 박막 증착 장치
JP5328726B2 (ja) * 2009-08-25 2013-10-30 三星ディスプレイ株式會社 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法
JP5677785B2 (ja) 2009-08-27 2015-02-25 三星ディスプレイ株式會社Samsung Display Co.,Ltd. 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
US8696815B2 (en) 2009-09-01 2014-04-15 Samsung Display Co., Ltd. Thin film deposition apparatus
US8876975B2 (en) 2009-10-19 2014-11-04 Samsung Display Co., Ltd. Thin film deposition apparatus
JP4974036B2 (ja) 2009-11-19 2012-07-11 株式会社ジャパンディスプレイセントラル 有機el装置の製造方法
KR101084184B1 (ko) 2010-01-11 2011-11-17 삼성모바일디스플레이주식회사 박막 증착 장치
KR101174875B1 (ko) 2010-01-14 2012-08-17 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR101193186B1 (ko) * 2010-02-01 2012-10-19 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR101156441B1 (ko) 2010-03-11 2012-06-18 삼성모바일디스플레이주식회사 박막 증착 장치
KR101202348B1 (ko) 2010-04-06 2012-11-16 삼성디스플레이 주식회사 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법
US8894458B2 (en) 2010-04-28 2014-11-25 Samsung Display Co., Ltd. Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method
KR101223723B1 (ko) 2010-07-07 2013-01-18 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR101673017B1 (ko) 2010-07-30 2016-11-07 삼성디스플레이 주식회사 박막 증착 장치 및 이를 이용한 유기 발광 표시장치의 제조 방법
KR101565920B1 (ko) 2010-10-21 2015-11-05 비코 에이엘디 인코포레이티드 원자층 증착을 이용한 장치상의 배리어 층 형성
KR101723506B1 (ko) 2010-10-22 2017-04-19 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR101738531B1 (ko) 2010-10-22 2017-05-23 삼성디스플레이 주식회사 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR20120045865A (ko) 2010-11-01 2012-05-09 삼성모바일디스플레이주식회사 유기층 증착 장치
KR20120065789A (ko) 2010-12-13 2012-06-21 삼성모바일디스플레이주식회사 유기층 증착 장치
KR101760897B1 (ko) 2011-01-12 2017-07-25 삼성디스플레이 주식회사 증착원 및 이를 구비하는 유기막 증착 장치
KR101852517B1 (ko) 2011-05-25 2018-04-27 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR101840654B1 (ko) 2011-05-25 2018-03-22 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR101857249B1 (ko) 2011-05-27 2018-05-14 삼성디스플레이 주식회사 패터닝 슬릿 시트 어셈블리, 유기막 증착 장치, 유기 발광 표시장치제조 방법 및 유기 발광 표시 장치
KR101826068B1 (ko) 2011-07-04 2018-02-07 삼성디스플레이 주식회사 유기층 증착 장치
KR20140118551A (ko) 2013-03-29 2014-10-08 삼성디스플레이 주식회사 증착 장치, 유기 발광 표시 장치 제조 방법 및 유기 발광 표시 장치
KR102037376B1 (ko) 2013-04-18 2019-10-29 삼성디스플레이 주식회사 패터닝 슬릿 시트, 이를 구비하는 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치
CN105849867A (zh) 2013-12-27 2016-08-10 3M创新有限公司 均匀成形制品的三维阵列上的均匀化学气相沉积涂层
CN109190199B (zh) * 2018-08-15 2023-05-05 中国人民解放军92942部队 确定排气孔二维排布方式的方法、装置,打孔方法,排气装置
WO2025191947A1 (ja) * 2024-03-11 2025-09-18 株式会社ニューフレアテクノロジー 整流板、成膜装置、及びその評価方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316793A (en) * 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
US5268034A (en) 1991-06-25 1993-12-07 Lsi Logic Corporation Fluid dispersion head for CVD appratus
US5286519A (en) 1991-06-25 1994-02-15 Lsi Logic Corporation Fluid dispersion head
JP3735452B2 (ja) 1997-10-24 2006-01-18 松下電器産業株式会社 誘電体薄膜形成装置及び誘電体薄膜形成方法
US6337102B1 (en) 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
US6050506A (en) 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6565661B1 (en) 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
DE50100603D1 (de) 2000-02-04 2003-10-16 Aixtron Ag Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat
JP2002141290A (ja) 2000-11-06 2002-05-17 Hitachi Ltd 半導体製造装置
US20030015140A1 (en) * 2001-04-26 2003-01-23 Eastman Kodak Company Physical vapor deposition of organic layers using tubular sources for making organic light-emitting devices
US7744957B2 (en) 2003-10-23 2010-06-29 The Trustees Of Princeton University Method and apparatus for depositing material
TWI264473B (en) 2001-10-26 2006-10-21 Matsushita Electric Works Ltd Vacuum deposition device and vacuum deposition method
JP3735287B2 (ja) * 2001-10-26 2006-01-18 松下電工株式会社 真空蒸着装置及び真空蒸着方法
US7524532B2 (en) 2002-04-22 2009-04-28 Aixtron Ag Process for depositing thin layers on a substrate in a process chamber of adjustable height
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US20040144321A1 (en) * 2003-01-28 2004-07-29 Eastman Kodak Company Method of designing a thermal physical vapor deposition system
JP2007500794A (ja) * 2003-05-16 2007-01-18 エスブイティー アソーシエイツ インコーポレイテッド 薄膜蒸着エバポレーター
US20050103265A1 (en) 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films

Also Published As

Publication number Publication date
JP5260312B2 (ja) 2013-08-14
EP1977025A1 (en) 2008-10-08
WO2007084275A1 (en) 2007-07-26
EP1977025B1 (en) 2013-04-10
US20070163497A1 (en) 2007-07-19
US7645483B2 (en) 2010-01-12
KR20130079647A (ko) 2013-07-10
KR101326147B1 (ko) 2013-11-06
KR20080093991A (ko) 2008-10-22
TW200732506A (en) 2007-09-01
JP2009523915A (ja) 2009-06-25

Similar Documents

Publication Publication Date Title
TWI388691B (zh) 氣相沉積之二維孔陣列
US6960262B2 (en) Thin film-forming apparatus
EP2524974B1 (en) Injector for a vacuum vapour deposition system
US20070166459A1 (en) Assembly and method for delivering a reactant material onto a substrate
US20080115729A1 (en) Evaporation source and vacuum evaporator using the same
JP4782219B2 (ja) 真空蒸着装置
CN100340694C (zh) 可控膜厚分布的线型或平面型蒸发器
CN1287002C (zh) 喷射沉积有机物蒸汽的方法和装置
JP2004232090A (ja) 蒸着方法
CN1175126C (zh) 在真空中涂覆基底的方法和设备
US20040134428A1 (en) Thin-film deposition device
EP2187709B1 (en) Vapor emission device, organic thin-film vapor deposition apparatus and method of organic thin-film vapor deposition
TWI386525B (zh) 以化學氣相沉積法(cvd)在半導體晶圓上沉積一層之方法及實施該方法之室
KR20160013158A (ko) 반도체 처리 챔버를 위한 코팅된 라이너 어셈블리
US20160201195A1 (en) Depositing apparatus
KR20170095371A (ko) 재료 증착 어레인지먼트, 진공 증착 시스템, 및 재료를 증착하기 위한 방법
KR101990619B1 (ko) 증발된 재료를 증착하기 위한 장치, 분배 파이프, 진공 증착 챔버, 및 증발된 재료를 증착하기 위한 방법
CN101803460A (zh) 有机材料蒸气产生装置、成膜源、成膜装置
JP2011047051A (ja) 化学量論的組成勾配層及び層構造の製造方法及び装置
WO2024039613A1 (en) Temperature-controlled showerhead assembly for cyclic vapor deposition
US20110195186A1 (en) Plane-type film continuous evaporation source and the manufacturing method and system using the same
JP4560394B2 (ja) 薄膜形成用分子供給装置
JP4795236B2 (ja) 基板を被覆するための方法および装置
KR100484237B1 (ko) 기상 증착 장치
CN110191976B (zh) 蒸发坩埚和蒸发设备