JP5260312B2 - 蒸着のための二次元開口部アレイ - Google Patents
蒸着のための二次元開口部アレイ Download PDFInfo
- Publication number
- JP5260312B2 JP5260312B2 JP2008551285A JP2008551285A JP5260312B2 JP 5260312 B2 JP5260312 B2 JP 5260312B2 JP 2008551285 A JP2008551285 A JP 2008551285A JP 2008551285 A JP2008551285 A JP 2008551285A JP 5260312 B2 JP5260312 B2 JP 5260312B2
- Authority
- JP
- Japan
- Prior art keywords
- opening
- substrate
- deposition
- openings
- uniformity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/333,111 | 2006-01-17 | ||
| US11/333,111 US7645483B2 (en) | 2006-01-17 | 2006-01-17 | Two-dimensional aperture array for vapor deposition |
| PCT/US2007/000425 WO2007084275A1 (en) | 2006-01-17 | 2007-01-05 | Two-dimensional aperture array for vapor deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009523915A JP2009523915A (ja) | 2009-06-25 |
| JP2009523915A5 JP2009523915A5 (enExample) | 2010-02-25 |
| JP5260312B2 true JP5260312B2 (ja) | 2013-08-14 |
Family
ID=37913591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008551285A Active JP5260312B2 (ja) | 2006-01-17 | 2007-01-05 | 蒸着のための二次元開口部アレイ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7645483B2 (enExample) |
| EP (1) | EP1977025B1 (enExample) |
| JP (1) | JP5260312B2 (enExample) |
| KR (2) | KR101326147B1 (enExample) |
| TW (1) | TWI388691B (enExample) |
| WO (1) | WO2007084275A1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070221128A1 (en) * | 2006-03-23 | 2007-09-27 | Soo Young Choi | Method and apparatus for improving uniformity of large-area substrates |
| EP2425470A2 (en) * | 2009-05-01 | 2012-03-07 | Kateeva, Inc. | Method and apparatus for organic vapor printing |
| TWI472639B (zh) | 2009-05-22 | 2015-02-11 | Samsung Display Co Ltd | 薄膜沉積設備 |
| TWI475124B (zh) * | 2009-05-22 | 2015-03-01 | Samsung Display Co Ltd | 薄膜沉積設備 |
| KR20130048677A (ko) * | 2009-05-26 | 2013-05-10 | 엥떼르위니베르시테르 미크로엘렉트로니카 쌍트륌 베제드두블르베 | 기판에 유기 재료 층을 형성시키는 방법 |
| US8882920B2 (en) | 2009-06-05 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| US8882921B2 (en) * | 2009-06-08 | 2014-11-11 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| KR101074792B1 (ko) * | 2009-06-12 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
| KR101117719B1 (ko) * | 2009-06-24 | 2012-03-08 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
| KR101127575B1 (ko) * | 2009-08-10 | 2012-03-23 | 삼성모바일디스플레이주식회사 | 증착 가림막을 가지는 박막 증착 장치 |
| JP5328726B2 (ja) * | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
| JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
| US8696815B2 (en) | 2009-09-01 | 2014-04-15 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| JP4974036B2 (ja) | 2009-11-19 | 2012-07-11 | 株式会社ジャパンディスプレイセントラル | 有機el装置の製造方法 |
| KR101084184B1 (ko) | 2010-01-11 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
| KR101174875B1 (ko) | 2010-01-14 | 2012-08-17 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR101193186B1 (ko) * | 2010-02-01 | 2012-10-19 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR101156441B1 (ko) | 2010-03-11 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
| KR101202348B1 (ko) | 2010-04-06 | 2012-11-16 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
| US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
| KR101223723B1 (ko) | 2010-07-07 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR101673017B1 (ko) | 2010-07-30 | 2016-11-07 | 삼성디스플레이 주식회사 | 박막 증착 장치 및 이를 이용한 유기 발광 표시장치의 제조 방법 |
| KR101565920B1 (ko) | 2010-10-21 | 2015-11-05 | 비코 에이엘디 인코포레이티드 | 원자층 증착을 이용한 장치상의 배리어 층 형성 |
| KR101723506B1 (ko) | 2010-10-22 | 2017-04-19 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101738531B1 (ko) | 2010-10-22 | 2017-05-23 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR20120045865A (ko) | 2010-11-01 | 2012-05-09 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
| KR20120065789A (ko) | 2010-12-13 | 2012-06-21 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
| KR101760897B1 (ko) | 2011-01-12 | 2017-07-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 구비하는 유기막 증착 장치 |
| KR101852517B1 (ko) | 2011-05-25 | 2018-04-27 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101840654B1 (ko) | 2011-05-25 | 2018-03-22 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101857249B1 (ko) | 2011-05-27 | 2018-05-14 | 삼성디스플레이 주식회사 | 패터닝 슬릿 시트 어셈블리, 유기막 증착 장치, 유기 발광 표시장치제조 방법 및 유기 발광 표시 장치 |
| KR101826068B1 (ko) | 2011-07-04 | 2018-02-07 | 삼성디스플레이 주식회사 | 유기층 증착 장치 |
| KR20140118551A (ko) | 2013-03-29 | 2014-10-08 | 삼성디스플레이 주식회사 | 증착 장치, 유기 발광 표시 장치 제조 방법 및 유기 발광 표시 장치 |
| KR102037376B1 (ko) | 2013-04-18 | 2019-10-29 | 삼성디스플레이 주식회사 | 패터닝 슬릿 시트, 이를 구비하는 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치 |
| CN105849867A (zh) | 2013-12-27 | 2016-08-10 | 3M创新有限公司 | 均匀成形制品的三维阵列上的均匀化学气相沉积涂层 |
| CN109190199B (zh) * | 2018-08-15 | 2023-05-05 | 中国人民解放军92942部队 | 确定排气孔二维排布方式的方法、装置,打孔方法,排气装置 |
| WO2025191947A1 (ja) * | 2024-03-11 | 2025-09-18 | 株式会社ニューフレアテクノロジー | 整流板、成膜装置、及びその評価方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5316793A (en) * | 1992-07-27 | 1994-05-31 | Texas Instruments Incorporated | Directed effusive beam atomic layer epitaxy system and method |
| US5268034A (en) | 1991-06-25 | 1993-12-07 | Lsi Logic Corporation | Fluid dispersion head for CVD appratus |
| US5286519A (en) | 1991-06-25 | 1994-02-15 | Lsi Logic Corporation | Fluid dispersion head |
| JP3735452B2 (ja) | 1997-10-24 | 2006-01-18 | 松下電器産業株式会社 | 誘電体薄膜形成装置及び誘電体薄膜形成方法 |
| US6337102B1 (en) | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
| US6050506A (en) | 1998-02-13 | 2000-04-18 | Applied Materials, Inc. | Pattern of apertures in a showerhead for chemical vapor deposition |
| US6565661B1 (en) | 1999-06-04 | 2003-05-20 | Simplus Systems Corporation | High flow conductance and high thermal conductance showerhead system and method |
| DE50100603D1 (de) | 2000-02-04 | 2003-10-16 | Aixtron Ag | Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat |
| JP2002141290A (ja) | 2000-11-06 | 2002-05-17 | Hitachi Ltd | 半導体製造装置 |
| US20030015140A1 (en) * | 2001-04-26 | 2003-01-23 | Eastman Kodak Company | Physical vapor deposition of organic layers using tubular sources for making organic light-emitting devices |
| US7744957B2 (en) | 2003-10-23 | 2010-06-29 | The Trustees Of Princeton University | Method and apparatus for depositing material |
| TWI264473B (en) | 2001-10-26 | 2006-10-21 | Matsushita Electric Works Ltd | Vacuum deposition device and vacuum deposition method |
| JP3735287B2 (ja) * | 2001-10-26 | 2006-01-18 | 松下電工株式会社 | 真空蒸着装置及び真空蒸着方法 |
| US7524532B2 (en) | 2002-04-22 | 2009-04-28 | Aixtron Ag | Process for depositing thin layers on a substrate in a process chamber of adjustable height |
| JP2003324072A (ja) | 2002-05-07 | 2003-11-14 | Nec Electronics Corp | 半導体製造装置 |
| US20040144321A1 (en) * | 2003-01-28 | 2004-07-29 | Eastman Kodak Company | Method of designing a thermal physical vapor deposition system |
| JP2007500794A (ja) * | 2003-05-16 | 2007-01-18 | エスブイティー アソーシエイツ インコーポレイテッド | 薄膜蒸着エバポレーター |
| US20050103265A1 (en) | 2003-11-19 | 2005-05-19 | Applied Materials, Inc., A Delaware Corporation | Gas distribution showerhead featuring exhaust apertures |
| US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
-
2006
- 2006-01-17 US US11/333,111 patent/US7645483B2/en active Active
-
2007
- 2007-01-05 EP EP07709614.7A patent/EP1977025B1/en active Active
- 2007-01-05 JP JP2008551285A patent/JP5260312B2/ja active Active
- 2007-01-05 KR KR1020087017307A patent/KR101326147B1/ko active Active
- 2007-01-05 WO PCT/US2007/000425 patent/WO2007084275A1/en not_active Ceased
- 2007-01-05 KR KR1020137015088A patent/KR20130079647A/ko not_active Withdrawn
- 2007-01-16 TW TW096101619A patent/TWI388691B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| EP1977025A1 (en) | 2008-10-08 |
| WO2007084275A1 (en) | 2007-07-26 |
| EP1977025B1 (en) | 2013-04-10 |
| TWI388691B (zh) | 2013-03-11 |
| US20070163497A1 (en) | 2007-07-19 |
| US7645483B2 (en) | 2010-01-12 |
| KR20130079647A (ko) | 2013-07-10 |
| KR101326147B1 (ko) | 2013-11-06 |
| KR20080093991A (ko) | 2008-10-22 |
| TW200732506A (en) | 2007-09-01 |
| JP2009523915A (ja) | 2009-06-25 |
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| Date | Code | Title | Description |
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| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100105 |
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