TWI380742B - - Google Patents
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- Publication number
- TWI380742B TWI380742B TW096110567A TW96110567A TWI380742B TW I380742 B TWI380742 B TW I380742B TW 096110567 A TW096110567 A TW 096110567A TW 96110567 A TW96110567 A TW 96110567A TW I380742 B TWI380742 B TW I380742B
- Authority
- TW
- Taiwan
- Prior art keywords
- unit
- hole
- hole row
- processing gas
- surface treatment
- Prior art date
Links
- 230000007246 mechanism Effects 0.000 claims description 37
- 238000004381 surface treatment Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims 1
- 239000011799 hole material Substances 0.000 description 75
- 239000007789 gas Substances 0.000 description 32
- 238000011282 treatment Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 238000003780 insertion Methods 0.000 description 10
- 230000037431 insertion Effects 0.000 description 10
- 239000011295 pitch Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 5
- 210000000078 claw Anatomy 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 210000003484 anatomy Anatomy 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- -1 etc. Chemical compound 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035935 pregnancy Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 102200006516 rs104894366 Human genes 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006087989 | 2006-03-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200742504A TW200742504A (en) | 2007-11-01 |
| TWI380742B true TWI380742B (ja) | 2012-12-21 |
Family
ID=38541168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096110567A TW200742504A (en) | 2006-03-28 | 2007-03-27 | Surface processing apparatus |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5162448B2 (ja) |
| KR (1) | KR101078506B1 (ja) |
| CN (1) | CN101405845B (ja) |
| TW (1) | TW200742504A (ja) |
| WO (1) | WO2007111251A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437002B (zh) * | 2011-11-29 | 2015-12-09 | 中国科学院微电子研究所 | 一种用于进气结构的匀气盘 |
| JP6414784B2 (ja) * | 2016-06-02 | 2018-10-31 | 香川県 | 大気圧プラズマ発生用電極、大気圧プラズマ発生装置、表面改質基材の製造方法、及び再利用電極の製造方法 |
| JP7215305B2 (ja) * | 2019-04-04 | 2023-01-31 | 日本電産株式会社 | プラズマ処理装置用の治具、および、プラズマ処理システム |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004283773A (ja) | 2003-03-24 | 2004-10-14 | Seiko Epson Corp | 表面処理装置および表面処理方法 |
| JP4427974B2 (ja) | 2003-06-12 | 2010-03-10 | コニカミノルタホールディングス株式会社 | 薄膜形成方法、薄膜形成装置及び高機能性薄膜 |
| JP4331117B2 (ja) * | 2003-07-23 | 2009-09-16 | 積水化学工業株式会社 | プラズマ処理装置の電極構造 |
-
2007
- 2007-03-23 WO PCT/JP2007/056018 patent/WO2007111251A1/ja active Application Filing
- 2007-03-23 KR KR1020087022104A patent/KR101078506B1/ko active IP Right Grant
- 2007-03-23 JP JP2008507465A patent/JP5162448B2/ja active Active
- 2007-03-23 CN CN2007800103453A patent/CN101405845B/zh active Active
- 2007-03-27 TW TW096110567A patent/TW200742504A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW200742504A (en) | 2007-11-01 |
| WO2007111251A1 (ja) | 2007-10-04 |
| JPWO2007111251A1 (ja) | 2009-08-13 |
| KR20080094817A (ko) | 2008-10-24 |
| CN101405845A (zh) | 2009-04-08 |
| CN101405845B (zh) | 2010-11-03 |
| JP5162448B2 (ja) | 2013-03-13 |
| KR101078506B1 (ko) | 2011-10-31 |
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