TW200742504A - Surface processing apparatus - Google Patents

Surface processing apparatus

Info

Publication number
TW200742504A
TW200742504A TW096110567A TW96110567A TW200742504A TW 200742504 A TW200742504 A TW 200742504A TW 096110567 A TW096110567 A TW 096110567A TW 96110567 A TW96110567 A TW 96110567A TW 200742504 A TW200742504 A TW 200742504A
Authority
TW
Taiwan
Prior art keywords
units
processing apparatus
surface processing
subject
processed
Prior art date
Application number
TW096110567A
Other languages
Chinese (zh)
Other versions
TWI380742B (en
Inventor
Mamoru Hino
Katsuhiro Imai
Hiroto Takeuchi
Yuichi Nakamori
Hidenori Takahashi
Susumu Yashiro
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of TW200742504A publication Critical patent/TW200742504A/en
Application granted granted Critical
Publication of TWI380742B publication Critical patent/TWI380742B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

[PROBLEMS] To process a surface by a simple constitution even when a subject to be processed is large. [MEANS FOR SOLVING PROBLEMS] A processing head (10) of a surface processing apparatus (1) is composed of a first unit (11L) and a second unit (11R). On these units (11), a hole row (34) for jetting out a processing gas is extended in a first direction. The first direction orthogonally intersects with a second direction wherein the subject to be processed is moved. The two units (11) are arranged by being shifted in the first direction and the second direction. The hole rows (34) of the two units (11) are overlapped when viewed from the second direction.
TW096110567A 2006-03-28 2007-03-27 Surface processing apparatus TW200742504A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006087989 2006-03-28

Publications (2)

Publication Number Publication Date
TW200742504A true TW200742504A (en) 2007-11-01
TWI380742B TWI380742B (en) 2012-12-21

Family

ID=38541168

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110567A TW200742504A (en) 2006-03-28 2007-03-27 Surface processing apparatus

Country Status (5)

Country Link
JP (1) JP5162448B2 (en)
KR (1) KR101078506B1 (en)
CN (1) CN101405845B (en)
TW (1) TW200742504A (en)
WO (1) WO2007111251A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437002B (en) * 2011-11-29 2015-12-09 中国科学院微电子研究所 A kind of even gas dish for air intake structure
JP6414784B2 (en) * 2016-06-02 2018-10-31 香川県 Electrode for atmospheric pressure plasma generation, atmospheric pressure plasma generator, method for producing surface modified substrate, and method for producing reusable electrode
JP7215305B2 (en) * 2019-04-04 2023-01-31 日本電産株式会社 JIG FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING SYSTEM

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004283773A (en) * 2003-03-24 2004-10-14 Seiko Epson Corp Surface treatment apparatus and surface treatment method
JP4427974B2 (en) * 2003-06-12 2010-03-10 コニカミノルタホールディングス株式会社 Thin film forming method, thin film forming apparatus, and highly functional thin film
JP4331117B2 (en) * 2003-07-23 2009-09-16 積水化学工業株式会社 Electrode structure of plasma processing equipment

Also Published As

Publication number Publication date
JP5162448B2 (en) 2013-03-13
CN101405845A (en) 2009-04-08
WO2007111251A1 (en) 2007-10-04
JPWO2007111251A1 (en) 2009-08-13
CN101405845B (en) 2010-11-03
KR20080094817A (en) 2008-10-24
TWI380742B (en) 2012-12-21
KR101078506B1 (en) 2011-10-31

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