CN101405845B - Surface processing apparatus - Google Patents
Surface processing apparatus Download PDFInfo
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- CN101405845B CN101405845B CN2007800103453A CN200780010345A CN101405845B CN 101405845 B CN101405845 B CN 101405845B CN 2007800103453 A CN2007800103453 A CN 2007800103453A CN 200780010345 A CN200780010345 A CN 200780010345A CN 101405845 B CN101405845 B CN 101405845B
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- 230000007246 mechanism Effects 0.000 claims description 38
- 239000007921 spray Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 33
- 239000000758 substrate Substances 0.000 description 15
- 238000006073 displacement reaction Methods 0.000 description 14
- 238000004381 surface treatment Methods 0.000 description 11
- 238000000265 homogenisation Methods 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention can process a surface by a simple constitution even when a subject to be processed is large. A processing head (10) of a surface processing apparatus (1) is composed of a first unit (11L) and a second unit (11R). On these units (11), a hole row (34) for jetting out a processing gas is extended in a first direction. The first direction orthogonally intersects with a second direction wherein the subject to be processed is moved. The two units (11) are arranged by being shifted in the first direction and the second direction. The hole rows (34) of the two units (11) are overlapped when viewed from the second direction.
Description
Technical field
The present invention relates to handle gas, carry out the surface-treated devices such as cleaning, surface modification, etching, polishing, film forming of object being treated, comprise plasma surface processing device or hot CVD device etc. to object being treated ejection.Especially, relate in plasma treatment, object being treated is disposed at the outside of inter-electrode space, be ejected in the so-called distance type plasma processing apparatus of the plasma that forms between electrode towards it.
Background technology
In manufacturing field of flat-panel monitors such as liquid crystal panel etc., in recent years, object being treated is in the tendency of maximization, and surface processing device is also sought the reply at large-scale object being treated.
In patent documentation 1,2, put down in writing be provided with two row a plurality of electrodes and long side direction are arranged in parallel the electrodes series that forms, between these two electrodes series, formed the plasma surface processing device of gap-like discharge space.Even each electrode is short, also the gap-like discharge space can be set as the length corresponding with the width dimensions of large-scale object being treated.By will being sprayed onto object being treated with the processing gas of this gap-like discharge space plasmaization, whole width that can disposable processing object being treated.Object being treated with the direction of long side direction (bearing of trend of the gap-like discharge space) quadrature of electrode on be transferred.
In patent documentation 3,4, put down in writing with a plurality of electrodes with the direction of long side direction quadrature on arrange the electrode module that forms is provided with front and back stages along described long side direction technology.Giving formation gap-like discharge space between the adjacent electrode of electrode module.The electrode module of the electrode module of prime and back level is provided with half degree of staggered interlaminar resin distance on the direction in the arrangement of above-mentioned electrode.Thereby, the gap-like discharge space of prime and back level half spacing that also staggers.Object being treated is transferred on the long side direction of the long side direction of each electrode and then each gap-like discharge space.
Patent documentation 1: 2005-No. 302685 communiques of TOHKEMY
Patent documentation 2: 2005-No. 302686 communiques of TOHKEMY
Patent documentation 3: 2005-No. 135892 communiques of TOHKEMY
Patent documentation 4: 2005-No. 333096 communiques of TOHKEMY
When a plurality of unit one straight line that will comprise electrode module etc. is arranged, distribution or pipe arrangement need be set in the end towards adjacent unit, or the part beyond in described end is provided with the support of stand, not only to arrange common unit a plurality of.
Summary of the invention
The object of the present invention is to provide can be with the surface processing device of the large-scale object being treated of simple structure reply.
In order to address the above problem, the present invention is a kind of surface processing device, and it will handle the surface that gas is sprayed onto object being treated, handle this surface, it is characterized in that possessing:
First module, it has first hole row that are used to spray described processing gas, and this first hole is listed in first party and extends upward;
Unit second, it has second hole row that are used to spray described processing gas, and this second hole is listed on the direction identical with described first hole row extends;
Travel mechanism, it makes described object being treated with respect to described first, second unit, with the second direction of described first direction quadrature on relatively move, wherein
The described first module and second configuration of cells are to stagger on described first direction mutually, and stagger on described second direction.
Thus, even under object being treated is large-scale situation, also can carry out surface treatment with simple structure.
The end of the first module side of the end of second cell side of the long side direction of preferred described first hole row and the long side direction of described second hole row is under the situation of observing from described second direction, and is overlapping on described first direction.
Thus, in row end, the hole of each unit, even under the situation that disposal ability reduces than hole row central portion owing to handle the deceleration of gas or inactivation, also can make the disposal ability at this lap place become the size that two low disposal abilities are added up, obtain the disposal ability that equates with the hole row central portion of each unit by making two cells overlaps.
Preferably also possess: stand; Connect mechanism, it is linked to this stand with described first module, and can be in the position of the described first module of described first direction adjusted.
Thus, can absorb assembly error, or regulate above-mentioned overlapping width along first direction.
Preferably also possess: stand; Connect mechanism, it is linked to this stand with described first module, and can with the position of the described first module of third direction adjusted of described first direction and second direction quadrature.
Thus, can absorb assembly error along third direction, or the distance between regulon and the object being treated (operating distance), or the heterogeneity of the degree of treatment of the degree of treatment of first processing region that causes such as the individual difference between correcting unit and second processing region.
Preferably also possess: stand; Connect mechanism, it is linked to this stand with described first module, and can regulate the angle of observing from described first direction to described first module.
Thus, can absorb the angular error of observing, or regulate direction to object being treated ejection gas from first direction, or the heterogeneity of the treatment state of the treatment state of first processing region that causes such as the individual difference between correcting unit and second processing region.
Preferably also possess: stand; Connect mechanism, it is linked to this stand with described first module, and can regulate the angle of observing from described second direction to described first module.
Thus, can absorb the angular error of observing, or regulate direction to object being treated ejection gas from second direction, or the heterogeneity of the treatment state of the treatment state of first processing region that causes such as the individual difference between correcting unit and second processing region.
Preferably also possess: stand; A pair of connect mechanism, it is arranged at the both ends of the described first direction of described first module respectively, and described first module is linked to described stand, and can with the position of the described first module of third direction adjusted of described first direction and second direction quadrature.
Thus, not only can be in the position of third direction adjusted first module, but also can regulate the angle of observing from second direction.
Preferably also possess: stand; Four connect mechanisms, its be arranged at respectively described first module from observed four jiaos with the third direction of described first direction and second direction quadrature, and described first module is linked to described stand, and can with the position of the described first module of third direction adjusted of described first direction and second direction quadrature.
Thus, not only can reach the angle of observing but also can regulate the angle of observing in the position of third direction adjusted first module from second direction from first direction.
Preferably also possess:
Stand; Connect mechanism, it is linked to this stand with described first module,
Described connect mechanism has:
Be supported portion, it is arranged at described first module;
Unit bearing portion, it is arranged at described stand, and with the third direction of described first direction and second direction quadrature on described to be supported portion opposed;
First, second connection shaft, it is set to extend along described third direction described being supported between portion and the unit bearing portion;
First restrictions, it is arranged at described first connection shaft, and allow described be supported portion with respect to described unit bearing portion along described third direction away from, and limit access to;
Second restrictions, it is arranged at described second connection shaft, and allows that described to be supported portion approaching along described third direction with respect to described unit bearing portion, and restriction away from.
Thus, can be with the first module supporting for can absorbing the alignment error on first direction and the third direction in first direction and third direction adjusted position.
Preferably in a described side who is supported in portion and the unit bearing portion, be formed with the inserting hole that is used for inserting logical described first connection shaft or second connection shaft and links, this inserting hole forms the slotted hole of major axis towards described first direction.
Thus, can be in the position of first direction adjusted first module with respect to stand, can absorb the assembly error along first direction of first module, maybe can with first module on first direction with respect to the second unit adjusting position, can regulate above-mentioned overlapping width.
Preferred described first connection shaft is the screwed part of axis towards described third direction,
The described end that is supported portion's side at described first connection shaft screws togather described first restrictions, and the top, end of the described unit bearing portion side of described first connection shaft is bumped in described unit bearing portion,
Described first restrictions with described be supported portion towards the face butt of described unit bearing portion or engage.
Thus, can be with simple structure, allow described be supported portion with respect to unit bearing portion along described third direction away from, limit that it is approaching.
Preferred described second connection shaft is the screwed part of axis towards described third direction,
The described end that is supported portion's side of described second connection shaft is provided with described second restrictions, and the end of the described unit bearing portion side of described second connection shaft is screwed together in described unit bearing portion,
Described second restrictions and the described face butt that is supported portion towards a side opposite with described unit bearing portion.
Thus, can be with simple structure, allow that described to be supported portion approaching along described third direction with respect to unit bearing portion, limit its away from.
Preferably be not only first module, and Unit second also is linked to stand by the connect mechanism identical with first module.
Preferred described first module is included on the described first direction pair of electrodes of extending respectively, and these electrodes are opposed and forming discharge space each other on described second direction, and the downstream of this discharge space links to each other with described first hole row.Preferred Unit second also constitutes in the same manner.
Thus, can carry out plasma surface treatment.
The present invention is adapted at generating plasma about atmospheric pressure down, carries out surface treatment.(roughly normal pressure) is meant 1.013 * 10 about atmospheric pressure
4～50.663 * 10
4The scope of Pa, under the situation of the easy of considering pressure controlled facilitation or apparatus structure, preferred 1.333 * 10
4～10.664 * 10
4Pa (100～800Torr), more preferably 9.331 * 10
4～10.397 * 10
4Pa (700～780Torr).
In addition, the present invention is a kind of surface processing device, and it will be handled gas and be sprayed onto the surface of object being treated and handle this surface, it is characterized in that possessing:
Handle head, it is included in the upwardly extending a plurality of unit of first party;
Travel mechanism, it makes described object being treated with respect to described processing head, with the second direction of described first direction quadrature on relatively move, wherein
Described a plurality of unit have respectively be used to spray described processing gas at the upwardly extending hole of described first party row,
A part of unit in described a plurality of unit at interval, with certain spacing arrangement, constitutes the first module row on described first direction,
Other a part of unit in described a plurality of unit at interval, to be listed as identical spacing arrangement with described first module, constitute second cell columns on described first direction,
Described first module row and described second cell columns on described second direction side by side, and, the unit that described first module is listed as and the unit of described second cell columns on described first direction, stagger described spacing pact half.
Thus, even under object being treated is large-scale situation, also can carry out surface treatment with simple structure.Can guarantee the space in the end of the long side direction of each unit, easily the supporting structure of dispensing unit (to the connect mechanism of stand) or pipe arrangement or distribution.
According to the present invention as can be known, even under object being treated is large-scale situation, also can carry out surface treatment with simple structure.
Description of drawings
Fig. 1 is the vertical view of the atmospheric pressure plasma surface processing device of first execution mode of the present invention.
Fig. 2 is the front view of the above-mentioned surface processing device of the II-II line along Fig. 1.
Fig. 3 is the composite diagram of the figure of gas spray volume in each position of the vertical view of expression electrode of above-mentioned surface processing device and ejiction opening and described ejiction opening or handling rate.
Fig. 4 is the side cut away view of connect mechanism of the unit of the above-mentioned surface processing device of expression.
Fig. 5 (a) is the main pseudosection of the above-mentioned connect mechanism of the VA-VA line along Fig. 4, (b) is the main pseudosection of the above-mentioned connect mechanism of the VB-VB line along Fig. 4.
Fig. 6 is the main pseudosection that expression makes the state of elementary displacement, (a) corresponding to Fig. 5 (a), (b) corresponding to Fig. 5 (b), solid line is the state with unit displacement to the right, two chain-dotted lines are the states with unit displacement left, and three chain-dotted lines are with the make progress state of displacement of unit.
Fig. 7 is a front view of representing the state of inclination under the situation of positive (second direction) observation first module.
Fig. 8 is that (first direction) observes the side view of the state that expression is tilted under the situation of first module from the side.
Fig. 9 is the main pseudosection of the variation of expression connect mechanism, (a) corresponding to Fig. 5 (a), (b) corresponding to Fig. 5 (b).
Figure 10 is with the main pseudosection of the state of elementary displacement in the presentation graphs 9, (a) corresponding to Fig. 9 (a), (b) corresponding to Fig. 9 (b), solid line is the state with unit displacement to the right, two chain-dotted lines are the states with unit displacement left, and three chain-dotted lines are with the make progress state of displacement of unit.
The gap-like ejiction opening of the unit about Figure 11 represents does not have overlapping variation, is the composite diagram of the figure of the handling rate in each position of vertical view and ejiction opening.
Figure 12 is expression has constituted the variation of two column units row with four unit a vertical view.
Figure 13 is the vertical view that expression is made as cell columns the variation of four row.
Figure 14 is the stereogram that the variation of header structure is handled in expression.
Figure 15 is the stereogram of the variation of the expression processing header structure that other modes of hole array structure is applicable to Figure 14.
Figure 16 is the stereogram of the variation of the expression processing header structure that other modes of hole array structure is applicable to Figure 14.
Figure 17 is the stereogram of the variation of the expression processing header structure that other modes of hole array structure is applicable to Figure 14.
Among the figure: W-object being treated; 1-atmospheric pressure plasma surface processing device; 2-processing gas source; 2a-supply road; 3-power circuit; 10-processing head; 11-unit; 11L-first module; 11R-second unit; 12-rectification module; 13-discharge module; 20-roller conveyer (travel mechanism); The frame of 21-roller conveyer; 31,32-electrode; 33-inter-electrode space; 34-ejiction opening; 34L-first ejiction opening (first hole row); 34R-second ejiction opening (second hole row); 34a-aperture; First hole row of 340L-constitute by aperture; Second hole row of 340R-constitute by aperture; 40-stand; 41-backbar; 50 1 connect mechanisms; 51-substrate masses (unit bearing portion); The female threaded hole of 51b-substrate masses; 52-rest pad (first restrictions); The female threaded hole of 52a-rest pad; The inserting hole of 52b-rest pad; 53-support; 53v-side plate; 53h-upper plate portion (being supported portion); 53a, 53b-inserting hole (slotted hole); 54-the first connection shaft (screwed part); 55-the second connection shaft (screwed part); The head of 55a-second connection shaft (second restrictions); 110-cell columns; 110A-first module row; 110B-second cell columns.
Embodiment
Below, embodiments of the present invention are described.
Fig. 1 and Fig. 2 are the figure that expression is used to handle the atmospheric pressure plasma surface processing device 1 of object being treated W.Object being treated W is the large-area glass substrate that for example uses as the flat board of liquid crystal TV set or plasma television etc.Surface processing device 1 is with the surface of this glass substrate W hydrophilicity-imparting treatment for example.
Surface processing device 1 possesses: handle 10 and travel mechanism 20.
As shown in Figure 2, travel mechanism 20 is made of roller conveyer.Roller conveyer 20 makes object being treated W go up and move at fore-and-aft direction (second direction, in Fig. 2 with respect to the direction of paper quadrature).
At the upside of the left and right sides of roller conveyer 20 frame 21 assembling stand 40, set handling 10 on this stand 40.Handle 10 tops that are disposed at roller conveyer 20, handle 10 and object being treated W about (third direction) go up opposed.Object being treated W can be by handling a below of 10.
As shown in Figure 1, handle 10 and possess two (a plurality of) unit 11,11.These unit 11,11 are identical structure mutually.Below, when these two unit 11,11 of difference and structure important document thereof, to the unit 11 in left side and the symbol mark " L " of constitutive requirements thereof, to the unit 11 on right side and the symbol mark " R " of constitutive requirements thereof.Left and right sides either party's unit 11 (for example Zuo Ce unit 11L) constitutes " first module ", and the opposing party's unit 11 constitutes " Unit second ".
As shown in Figure 2, each unit 11 comprises: the rectification module 12 of upside and the discharge module 13 of downside.These modules 12,13 respectively about (first direction) extend.Supply with road 2a and extend from handling gas source 2, this supplies with road 2a branch, rectification module 12L, the 12R of unit 11L, 11R about being connected to.Omit diagram, but rectification module 12 has the rectification road that gap, aperture, chamber etc. constitute, make from the processing gas of supplying with road 2a in the rectification road along the left and right directions homogenization.
As the hydrophiling use body of regulating the flow of vital energy, for example use nitrogen.
As shown in Figure 3, contain pair of electrodes 31,32 at discharge module 13.Each electrode 31,32 about extend.Pair of electrodes 31,32 disposes opposed to each other in front and back.One side's electrode 31 is connected with power circuit 3.The opposing party's the electrode 32 ground connection ground connection that is electrically connected.At least one side's opposed faces at these electrodes 31,32 is provided with solid state dielectric (not shown).
Be formed with the gap-like inter-electrode space 33 of extending about the edge each other in pair of electrodes 31,32.By from power circuit 3 to electrode 31 service voltages, between electrode 31,32, form Atomospheric pressure glow discharge, inter-electrode space 33 becomes discharge space.
The upper end of inter-electrode space 33 links to each other with the rectification road of rectification module 12.Processing gas by rectification module 12 left and right sides homogenizations imports on inter-electrode space 33 long side directions equably.Also have, utilize above-mentioned Atomospheric pressure glow discharge by plasmaization.
As shown in Figure 2, be provided with the ejiction opening 34 (hole row) that links to each other with the bottom of inter-electrode space 33 in the bottom of discharge module 13.As shown in Figures 2 and 3, ejiction opening 34 form about the gap-like of extending.The bottom of inter-electrode space 33 constitutes ejiction opening 34 and also can.The processing gas in space 33 is from ejiction opening 34 ejections of lower end between iontophoresis electrode.
The gap-like ejiction opening 34 of left and right sides either party's unit 11 (for example, the gap-like ejiction opening 34L of the unit 11L in left side) constitutes " first hole row ", and the gap-like ejiction opening 34 of the opposing party's unit 11 constitutes " second hole row ".
As Fig. 1 and shown in Figure 3, two unit 11,11 and then gap- like ejiction opening 34,34 be configured to mutually about stagger, and stagger in front and back.
The amount of staggering of the fore-and-aft direction of the ejiction opening 34L in left side and the ejiction opening 34R on right side is preferably greater than, and for below about 200mm, more preferably from about about 150mm.
The left part of the right part of the unit 11L in left side and the unit 11R on right side is overlapping under the situation of upwards observing from front and back.And then the left part of the right part of left side gap-like ejiction opening 34L and the ejiction opening 34R on right side is under the situation of upwards observing from front and back, and is overlapping in the left and right sides.
Ratio with respect to the lap of the total length of each ejiction opening 34 is preferably about below 5%, more preferably from about below 3%.
The length of each ejiction opening 34 for example is about 100～2000mm.In this case, below the preferably about 50mm of the lap between left and right sides ejiction opening 34L, the 34R.
The figure of Fig. 3 is the gap-like ejiction opening 34L about expression, the spray volume from each position of 34R.At the pars intermedia (except the part at two ends) of the long side direction of each gap-like ejiction opening 34, spray volume constant.At the both ends of the long side direction of ejiction opening 34, spray volume sharply reduces.Thereby, utilize the ejection curve of each ejiction opening 34 to be depicted as roughly trapezoidal.By with about overlapping configuration of ejiction opening 34L, 34R, the inclined-plane of the left part of the inclined-plane of the right part of the ejection curve in left side and the ejection curve on right side intersects mutually.This crossover location is preferably placed at: about separately spray volume become about 2～8 one-tenth position of maximum (trapezoidal top), more preferably become about 5 one-tenth position.
From near near the distance till the right-hand member of the constant part of the spray volume of the ejiction opening 34R on the right side left end of the constant part of the spray volume of the ejiction opening 34L in left side preferably with the width of object being treated W about equally.
Above-mentioned spray volume is corresponding to handling rate.In hydrophilicity-imparting treatment, corresponding to the contact angle on the object being treated surface after handling.In phase diagram, be used to handling rate constant except the middle body at both ends from the first processing region R1 of the ejection gas of the ejiction opening 34L in left side, sharply reduce at both ends.Be used to handling rate constant, sharply reduce at both ends except the middle body at both ends from the second processing region R2 of the ejection gas of the ejiction opening 34R on right side.The part that the handling rate of the left part of the part that the handling rate of the right part of the processing region R1 in left side sharply reduces and the processing region R2 on right side sharply reduces is just in time overlapping.With " R3 " expression overlapping region.
Supporting structure to unit 11 describes.
As shown in Figure 1, be provided with the backbar 41 of the weak point that extends along front and back at a plurality of regulations position of stand 40.Left and right end portions in backbar 41 each unit 11 of supporting.As shown in Figure 2, the left and right end portions of backbar 41 and each unit 11 links via connect mechanism 50.
As shown in Figure 1,11 both ends, the left and right sides are provided with support 53 respectively in the unit.As Fig. 4 and shown in Figure 5, each support 53 has: be fixed in unit 11 end face side plate 53v and from the outstanding upper plate portion 53h (being supported portion) of the upper end edge level of this side plate 53v, be the word of falling L shape section and extend along front and back.As shown in Figure 1, be formed with a pair of separately inserting hole 53a, 53b at the both ends of the long side direction of upper plate portion 53h.These inserting holes 53a, 53b form respectively major axis towards about slotted hole.A pair of inserting hole 53a, 53b arrange in front and back.
As Fig. 4 and shown in Figure 5, be fixed with substrate masses 51 (unit bearing portion) at the upper surface of each backbar 41.Substrate masses 51 is tetragonal section, extends on the direction identical with backbar 41.Both ends at the long side direction of the upper surface of substrate masses 51 are formed with female threaded hole 51b respectively.Substrate masses 51 is opposed with upper plate portion 53h away from the downside of the upper plate portion 53h of support 53.
Between the upper plate portion 53h of each substrate masses 51 and support 53, dispose rest pad 52 (first restrictions).Rest pad 52 is tetragonal section, extends on the direction identical with substrate masses 51.Arrange at the both ends of the long side direction of rest pad 52 and to be formed with female threaded hole 52a and inserting hole 52b, and this female threaded hole 52a and inserting hole 52b are paired.These holes 52a, 52b connect rest pad 52 respectively on above-below direction.
Shown in Fig. 4 and Fig. 5 (a), a side's of support 53 the inserting hole 53a and the female threaded hole 52a of rest pad 52 are being arranged above and below.In these holes 53a, 52a, dispose first connection shaft 54 that extends along up and down.First connection shaft 54 is made of bolt (screwed part).The head of bolt 54 from the upper plate portion 53h of support 53 make progress a little away from.The shank of bolt 54 connects the slotted hole 53a of support 53, is screwed among the female threaded hole 52a of rest pad 52.The upper surface in substrate masses 51 is bumped on the top to the leading section of bolt 54 (bottom) from the lower surface of rest pad 52 is outstanding.Rest pad 52 by this bolt 54 be supported to from substrate masses 51 upwards away from state.Upper plate portion 53h at the upper surface mounting support 53 of this rest pad 52.And then unit 11L, 11R are supported to the displacement of allowing upward, restriction displacement downwards.
Shown in Fig. 4 and figure (b), the female threaded hole 51b of the opposing party's of support 53 slotted hole 53b, the inserting hole 52b of rest pad 52 and substrate masses 51 is being arranged above and below.In these holes 53b, 52b, 51b, dispose second connection shaft 55 that extends along up and down.Second connection shaft 55 is by constituting than first connection shaft, 54 long bolts (screwed part).Bolt 55 is inserted and is led in the inserting hole 52b of the slotted hole 53b of support 53 and rest pad 52, and leading section (bottom) is screwed among the female threaded hole 51b of substrate masses 51.As shown in Figure 4, the support 53 upper surface butts of the both sides of the short side direction of head 55a of bolt 55 (second restrictions) and slotted hole 53b.Thus, bolt 55 is allowed the displacement downwards of unit 11, simultaneously, and restriction displacement upward.
As shown in Figure 1, comprising bolt is all around four jiaos that the connect mechanism 50 of first, second connection shaft 54,55 is disposed at each unit 11 respectively.
According to the surface processing device 1 that constitutes as described above as can be known, the processing gas of handling gas source 2 is via supplying with road 2a, the rectification module 12 by each unit 11 by left and right sides homogenization after, import in the inter-electrode space 33 of each discharge module 13.Simultaneously, from electrode 31 service voltages of power circuit 3 to each discharge module 13.Thus, inter-electrode space 33 becomes discharge plasma space, will handle gaseous plasmaization.This is sprayed from each gap-like ejiction opening 34 by the processing gas of plasmaization, and is sprayed onto the object being treated W that comes by roller conveyer 20 conveyings.Thus, can carry out the surface treatments such as hydrophiling of object being treated W.
By about arrange a plurality of unit 11, can handle the whole width of object being treated W.On the other hand, the electrode 31,32 of unit 11 one by one can be shortened, the deflection that Coulomb force or thermal expansion cause can be suppressed.
By staggering forwards, backwards between the unit 11,11, can avoid situation about disturbing between the end of long side direction of each unit 11, can improve the degree of freedom of the supporting structure of distribution or pipe arrangement or unit 11, summary that can implementation structure.
As shown in Figure 3, by with about the end of ejiction opening 34L, 34R between be made as under the situation of observing from the throughput direction of object being treated W overlappingly, the left part (part that spray volume sharply reduces) of the ejiction opening 34R on the right part of the ejiction opening 34L about can making (part that spray volume sharply reduces) and right side is overlapping.Thus, produce the situation of omitting the zone of handling between the processing region R1 that can prevent certainly and the processing region R2 on right side in the left side, the inadequate part R3 of processing of the left part of the inadequate part R3 of processing of the right part of the processing region R1 on the left of can making and the processing region R2 on right side is overlapped, the handling rate of this part R3 can be adjusted to each handling rate of handling the central portion of region R 1, R2 to equate.Thus, can guarantee the homogeneity handled.
Since about the figure of gas spray volume intersect at 50% place of the flat portions of central authorities respectively, thereby can carry out the processing of homogeneous ideally.
Shown in the solid line and two chain-dotted lines of Fig. 6 (a) and (b), support 53 can be in long side direction and the left and right directions adjusted position of slotted hole 53a, 53b.And then, can be with first module 11L with respect to the second unit 11R in left and right directions adjusted position.Thus, can absorb the assembly error of the left and right directions of two unit 11L, 11R.And then, about processing region R1, R2 can increase and decrease overlapping areas R3, the processing at R3 place, this overlapping region can be adjusted to inexcessive or not enough.Its result can realize the further homogenization of handling.
In addition, shown in three chain-dotted lines of Fig. 6 (a), regulate, can regulate the height of rest pad 52 by the amount of screwing togather of bolt 54 and rest pad 52.At this moment, shown in three chain-dotted lines of Fig. 6 (b), the amount of screwing togather of also regulating bolt 55 makes the upper surface butt of the upper plate portion 53h of the head 55a of this bolt 55 and support 53.Thus, each unit 11 direction adjusting position up and down can also be absorbed the assembly error of the above-below direction of two unit 11L, 11R.
And then the bolt 54,54 at the two ends, the left and right sides by mutual regulon 11 and the amount of screwing togather of rest pad 52,52 can be regulated the height of the rest pad 52,52 at two ends mutually.Thus, the levelness of the left and right directions of unit 11 can be guaranteed, assembly error can be absorbed.For example, as shown in Figure 7, have a down dip in the situation that first module 11L upwards observes from front and back (with respect to about horizontal direction) time, it can be corrected, make it become level.
And then the bolt 54,54 of the front and back (the long side direction two ends of support 53) by mutual regulon 11 and the amount of screwing togather of rest pad 52 can be regulated the levelness and even the angle of inclination of this rest pad 52.Thus, the levelness of the fore-and-aft direction of unit 11 can be guaranteed, assembly error can be absorbed.For example, as shown in Figure 8, when the situation of observing from left and right directions at first module 11L has a down dip (with respect to the horizontal direction of front and back), it can be corrected, make it become level.
Also have, usually, the angular adjustment amount of unit 11 is small, and the gradient of the unit 11L of Fig. 7 and Fig. 8 is amplified.
Four jiaos connect mechanism 50 of each unit 11 is not only in order to ensure the levelness of unit 11, but also can be applicable to the mutual homogenization of the handling rate of utilizing first, second unit.
For example, shown in two chain-dotted lines of the figure of Fig. 3, under the situation of spray volume (handling rate) of the unit 11L in left side, improve the height of the unit 11L in left side greater than the unit 11R on right side.Thus, can reduce the amount that the gas from the unit 11L in left side contacts with the surface of object being treated W, the handling rate of the processing region R1 in left side can be made as prescribed level as shown in Figure 3.Perhaps, the height of the unit 11R on reduction right side also can.Thus, gas and the amount that the surface of object being treated W contacts can be increased, the handling rate of the processing region R2 on right side can be improved from the unit 11R on right side.Its result can make the mutual homogenization of handling rate of left and right sides processing region R1, R2, the unit 11L about can absorbing, the individual difference of 11R.
Perhaps, as shown in Figure 8, the angular adjustment of the unit 11L in left side for having a down dip, the situation of observing from left and right directions also can.Thus, vertically spray gas from the unit 11R on right side, on the other hand, from the oblique ejection gas of the unit 11L in left side, this gas is along with before and after being partial to towards the below.Thus, regulate in the same manner, can reduce the amount that the gas from the unit 11L in left side contacts with the surface of object being treated W, the handling rate of the processing region R1 in left side can be made as the prescribed level shown in the solid line of Fig. 3 with the height of unit.Its result can make the mutual homogenization of handling rate of left and right sides processing region R1, R2, the unit 11L about can absorbing, the individual difference of 11R.
Shown in the dotted line of the figure of Fig. 3, for example, the spray volume (handling rate) of the unit 11L in left side is greater than the unit 11R on right side, and the spray volume (handling rate) of the unit 11L in this left side self is greatly to the right side degree, become as described above under the unbalanced situation, the unit 11L in left side is risen on the whole, simultaneously, the ascending amount of right part of unit 11L that makes this left side is greater than the ascending amount of left part, regulates the levelness (with reference to Fig. 7) of left and right directions of the unit 11L in this left side thus.Thus, reduce the handling rate of the processing region R1 in left side on the whole, and the handling rate of the right side of this processing region R1 reduces significantly than the left side.Its result can be made as the handling rate of the processing region R1 in left side the homogeneous state of regulation as illustrated in fig. 3, and then, the mutual homogenization of handling rate of processing region R1, the R2 about can making, the unit 11L about can absorbing, the individual difference of 11R.
Certainly in this case also as mentioned above, replace to promote the unit 11L in left side, reduce the unit 11R on right side, or when the unit 11L in left side tilted as illustrated in fig. 8 forwards, backwards, the levelness of left and right directions of regulating the unit 11L in left side also can.
Secondly, other execution modes of the present invention are described.In the following embodiments, the structure about repeating with above-mentioned execution mode marks identical symbol in the accompanying drawings, suitably omits explanation.
Fig. 9 is the figure of the variation of expression connect mechanism 50.Shown in Fig. 9 (a), first connection shaft, the 54 usefulness inserting hole 53a of support 53 form the hole of just round section, do not form slotted hole.On the other hand, shown in Fig. 9 (b), second connection shaft, the 55 usefulness inserting hole 52b of rest pad 52 form the slotted hole of major axis towards left and right directions.Identical the getting final product of slotted hole 53b of the section of the slotted hole 52b of this rest pad 52 (major axis and minor axis) and support 53.The slotted hole 52b of rest pad 52 directly links to each other with the slotted hole 53b of support 53.
According to this variation as can be known, shown in the solid line and two chain-dotted lines of Figure 10, in the unit during position adjustments of 11 the left and right sides, first connection shaft 54 and rest pad 52 can with together displacement to the left and right of support 53.
As shown in figure 11, owing to contact with object being treated W when spreading to the left and right from the gas of the ejiction opening 34 of each unit 11, each handles region R 1, R2, and the length than ejiction opening 34 is long sometimes.Under the sort of situation, about ejiction opening 34L, the 34R of unit 11L, 11R between the left and right sides is not overlapping under the situation of upwards observing from front and back can yet, on the contrary, about ejiction opening 34L, 34R between be positioned at left part than the ejiction opening 34R on right side away from, the right part of the ejiction opening 34L in left side to the left and right and rely on the place, left side and also can.The inclined-plane of the left end of the inclined-plane of the right-hand member of the processing region R1 in left side and the processing region R2 on right side is overlapping also can.
The quantity of handling a unit 11 of 10 is not limited to two, can suitably set according to the length of the width of object being treated W or each unit 11.For example, processing shown in Figure 12 10 is made of four unit 11.These unit 11 differently are configured to mutually, between the adjacent unit about stagger, and stagger in front and back.
Specifically, the processing of Figure 12 10 possesses: the cell columns 110B of the cell columns 100A of rear side (upside among Figure 12) and front side (downside among Figure 12).Any one party of two cell columns 110 (for example cell columns 110A) constitutes " first module row ", and the opposing party constitutes " second cell columns ".
Two (a plurality of) unit 11,11 arranging about each cell columns 110 is included in.The spacing p of these unit, left and right sides 11,11 is longer than the length of each unit 11, and between is formed with (space s) at interval.
The unit 11,11 of the unit 11,11 of one side's cell columns 110A and the opposing party's cell columns 110B half spacing (p/2) degree that on left and right directions, staggers.
If the unit of a side cell columns 110A 11 constitutes " first module ", then constitute " Unit second " with stagger the opposing party's the unit 11 of cell columns 110B of half pitch of this first module.
Both sides at the long side direction of each unit 11 are provided with space s, therefore, can easily avoid situation about disturbing with distribution headed by the supporting structure of connect mechanism 50 grades or pipe arrangement.
Figure 14 is the figure that a variation of 11 is handled in expression.Each pair of electrodes 31,32 of handling a 11L, 11R is opposed and dispose up and down.The electrode 31 of upside is connected with power circuit 3, the electrode 32 of the downside ground connection ground connection that is electrically connected.Below the electrode 32 of downside, dispose object being treated W.The upper surface (simultaneously) of the grounding electrode 32 of downside become towards power electrode 31 and electrode 31 between form the face of discharge space 33, the lower surface of electrode 32 (another side) becomes the face towards the configuration portion of object being treated W.At least one side at the upper surface of the lower surface of power electrode 31 and grounding electrode 32 is provided with the solid state dielectric layer (omitting diagram) that is used for the stabilisation Atomospheric pressure glow discharge.
Central portion in the second direction of the grounding electrode 32 of downside is formed with the gap-like ejiction opening 34 (hole row) that extends along first direction.The ejiction opening 34R of the ejiction opening 34L of first a processing 11L and second a processing 11R is overlapping on first direction.
The regulate the flow of vital energy supply road 2a of body source 2 (omitting in Figure 14) of getting along alone is connected to the both sides of the second direction of inter-electrode space 33.Handle gas and respectively between iontophoresis electrode in the space 33,, spray downwards, be sprayed at object being treated W from ejiction opening 34 by plasmaization from each both sides of second direction of handling an inter-electrode space 33 of 11.
Handle header structure as can be known according to this, grounding electrode 32 is disposed between power electrode 31 and the object being treated W, therefore, can shield from the electric field of power electrode 31 towards object being treated W, can prevent reliably that paradoxical discharge such as electric arc from resulting from the situation of object being treated W.
The present invention is not limited to above-mentioned execution mode, can carry out various changes.
For example, the stand of the stand of first module and Unit second becomes complicated variant and also can.
The hole row not only comprise a gap of extending along first direction, comprise that also a plurality of point-like or short gap-like hole are listed as along the hole that first direction forms a line.For example, as shown in figure 15, in the processing header structure of Figure 14, replace gap-like ejiction opening 34 and a plurality of aperture 34a forms a line along first direction and is disposed at grounding electrode 32 and also can.Comprise that first row of handling these apertures 34a among the 11L constitute the first hole row 340L.The row that comprise these apertures 34a among the second unit 11R constitute the second hole row 340R.
Handle in the head first, second each, a plurality of holes of extending along first direction be listed ass along second direction and arrange and dispose and also can.For example, as shown in figure 16, in the grounding electrode 32 of the processing header structure of Figure 14, a plurality of (is three at this) gap-like ejiction openings 34 (34L, 34R) extend along first direction respectively, and, arrange and be provided with and also can along second direction mutually.Perhaps, as shown in figure 17, at the row 340 (340L, 340R) of the aperture 34a that arranges on the first direction multiple row (is three row at this) is set on second direction and also can.
In execution mode, become first connection shaft 54 in a pair of bolt 54,54 to be disposed at the inboard of the Width (fore-and-aft direction) of unit 11, second connection shaft 55 is disposed at the outside, but first connection shaft 54 is disposed at the outside of the Width of unit 11, second connection shaft 55 is disposed at the outside also can.
In the variation of the connect mechanism 50 of Fig. 9 and Figure 10, support 53 and rest pad 52 are integral also can.Perhaps, omitting rest pad 52, the first connection shafts 54 directly is screwed together in rest pad 52 and also can.In this case, first connection shaft 54 is simultaneously as " first restrictions ".
By screwing togather nut, link first, second connection shaft and be supported portion or unit bearing portion also can at first, second connection shaft that comprises bolt.
As first restrictions, replace rest pad 52, use nut also can.
First, second connection shaft is made of a shared bolt (screwed part), comprises that in this bolt setting first restrictions of nut and second restrictions also can.
Under situation with the handling rate homogenization between first, second unit, not only utilize the height of unit of above-mentioned connect mechanism 50 and the adjusting of angle, and press each adjustments of gas quantity delivered of unit therewith concurrently, or the adjustments of gas adjuster, or adjusting also can to the connection power of electrode 31.
The present invention makes it contact with object being treated and gets final product so long as handle gas from the group ejection of holes such as gap row, is not limited to plasma surface treatment, can also be applicable to hot CVD or utilize the surface treatment that does not have electrode of the etching and so on of HF (hydrofluoric acid) steam etc.In addition, generally be applicable to the polishing that utilizes ozone etc., utilize CF
4Deng etching and film forming (CVD), cleaning, surface modification various surface treatments such as (hydrophilic treated, hydrophobic treatment etc.) in.
The pressure condition of handling is not limited to roughly normal pressure, also can under the reduced pressure atmosphere.
Utilizability on the industry
The inventive example is as being used in the dull and stereotyped surface treatment or the plasma surface treatment of the substrate of semiconductor in making with glass such as liquid crystal TV set or plasma television.
Claims (10)
1. surface processing device, it will be handled gas and be sprayed onto the surface of object being treated and handle this surface, it is characterized in that possessing:
First module, it has first hole row that are used to spray described processing gas, and this first hole is listed in first party and extends upward;
Unit second, it has second hole row that are used to spray described processing gas, and this second hole is listed on the direction identical with described first hole row extends;
Travel mechanism, it makes described object being treated with respect to described first, second unit, with the second direction of described first direction quadrature on relatively move, wherein
The described first module and second configuration of cells be, on described first direction, stagger mutually, and on described second direction, stagger,
This surface processing device also possesses: stand; Connect mechanism, it is linked to this stand with described first module, and can with the position of the described first module of third direction adjusted of described first direction and second direction quadrature.
2. surface processing device, it will be handled gas and be sprayed onto the surface of object being treated and handle this surface, it is characterized in that possessing:
First module, it has first hole row that are used to spray described processing gas, and this first hole is listed in first party and extends upward;
Unit second, it has second hole row that are used to spray described processing gas, and this second hole is listed on the direction identical with described first hole row extends;
Travel mechanism, it makes described object being treated with respect to described first, second unit, with the second direction of described first direction quadrature on relatively move, wherein
The described first module and second configuration of cells be, on described first direction, stagger mutually, and on described second direction, stagger,
This surface processing device also possesses: stand; Connect mechanism, it is linked to this stand with described first module, and can regulate the angle of observing from described first direction to described first module.
3. surface processing device, it will be handled gas and be sprayed onto the surface of object being treated and handle this surface, it is characterized in that possessing:
First module, it has first hole row that are used to spray described processing gas, and this first hole is listed in first party and extends upward;
Unit second, it has second hole row that are used to spray described processing gas, and this second hole is listed on the direction identical with described first hole row extends;
Travel mechanism, it makes described object being treated with respect to described first, second unit, with the second direction of described first direction quadrature on relatively move, wherein
The described first module and second configuration of cells be, on described first direction, stagger mutually, and on described second direction, stagger,
This surface processing device also possesses: stand; Connect mechanism, it is linked to this stand with described first module, and can regulate the angle of observing from described second direction to described first module.
4. surface processing device according to claim 1 is characterized in that,
Described connect mechanism is arranged at the both ends of the described first direction of described first module respectively.
5. surface processing device according to claim 1 is characterized in that,
Described connect mechanism be arranged at respectively described first module from observed four jiaos with the third direction of described first direction and second direction quadrature.
6. surface processing device according to claim 1 is characterized in that,
Described connect mechanism has:
Be supported portion, it is arranged at described first module;
Unit bearing portion, it is arranged at described stand, and with the third direction of described first direction and second direction quadrature on described to be supported portion opposed;
First, second connection shaft, it is set to extend along described third direction described being supported between portion and the unit bearing portion;
First restrictions, it is arranged at described first connection shaft, and allow described be supported portion with respect to described unit bearing portion along described third direction away from, and limit access to;
Second restrictions, it is arranged at described second connection shaft, and allows that described to be supported portion approaching along described third direction with respect to described unit bearing portion, and restriction away from.
7. surface processing device according to claim 6 is characterized in that,
In a described side who is supported in portion and the unit bearing portion, be formed with the inserting hole that is used for inserting logical described first connection shaft or second connection shaft and links, this inserting hole forms the slotted hole of major axis towards described first direction.
8. surface processing device according to claim 6 is characterized in that,
Described first connection shaft is the screwed part of axis towards described third direction,
Be supported described first connection shaft described on the end of portion's side and screw togather described first restrictions, the top, end of the described unit bearing portion side of described first connection shaft is bumped in described unit bearing portion,
Described first restrictions with described be supported portion towards the face butt of described unit bearing portion or engage.
9. surface processing device according to claim 6 is characterized in that,
Described second connection shaft is the screwed part of axis towards described third direction,
The described end that is supported portion's side of described second connection shaft is provided with described second restrictions, and the end of the described unit bearing portion side of described second connection shaft is screwed together in described unit bearing portion,
Described second restrictions and the described face butt that is supported portion towards a side opposite with described unit bearing portion.
10. surface processing device according to claim 1 is characterized in that,
Described first module is included in the pair of electrodes of extending respectively on the described first direction, these electrodes are opposed and forming discharge space each other on described second direction, and the downstream of handling the flow direction of gas in this discharge space links to each other with described first hole row.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP087989/2006 | 2006-03-28 | ||
| JP2006087989 | 2006-03-28 | ||
| PCT/JP2007/056018 WO2007111251A1 (en) | 2006-03-28 | 2007-03-23 | Surface processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101405845A CN101405845A (en) | 2009-04-08 |
| CN101405845B true CN101405845B (en) | 2010-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800103453A Active CN101405845B (en) | 2006-03-28 | 2007-03-23 | Surface processing apparatus |
Country Status (5)
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| JP (1) | JP5162448B2 (en) |
| KR (1) | KR101078506B1 (en) |
| CN (1) | CN101405845B (en) |
| TW (1) | TW200742504A (en) |
| WO (1) | WO2007111251A1 (en) |
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| CN102437002B (en) * | 2011-11-29 | 2015-12-09 | 中国科学院微电子研究所 | A kind of even gas dish for air intake structure |
| JP6414784B2 (en) * | 2016-06-02 | 2018-10-31 | 香川県 | Electrode for atmospheric pressure plasma generation, atmospheric pressure plasma generator, method for producing surface modified substrate, and method for producing reusable electrode |
| JP7215305B2 (en) * | 2019-04-04 | 2023-01-31 | 日本電産株式会社 | JIG FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING SYSTEM |
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| JP2004283773A (en) * | 2003-03-24 | 2004-10-14 | Seiko Epson Corp | Surface treatment apparatus and surface treatment method |
| JP4427974B2 (en) * | 2003-06-12 | 2010-03-10 | コニカミノルタホールディングス株式会社 | Thin film forming method, thin film forming apparatus, and highly functional thin film |
| JP4331117B2 (en) * | 2003-07-23 | 2009-09-16 | 積水化学工業株式会社 | Electrode structure of plasma processing equipment |
-
2007
- 2007-03-23 KR KR1020087022104A patent/KR101078506B1/en active IP Right Grant
- 2007-03-23 WO PCT/JP2007/056018 patent/WO2007111251A1/en active Application Filing
- 2007-03-23 CN CN2007800103453A patent/CN101405845B/en active Active
- 2007-03-23 JP JP2008507465A patent/JP5162448B2/en active Active
- 2007-03-27 TW TW096110567A patent/TW200742504A/en unknown
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| JP 2005-2417 A,全文. |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5162448B2 (en) | 2013-03-13 |
| CN101405845A (en) | 2009-04-08 |
| WO2007111251A1 (en) | 2007-10-04 |
| TW200742504A (en) | 2007-11-01 |
| JPWO2007111251A1 (en) | 2009-08-13 |
| KR20080094817A (en) | 2008-10-24 |
| TWI380742B (en) | 2012-12-21 |
| KR101078506B1 (en) | 2011-10-31 |
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