WO2007111251A1

WO2007111251A1 - Surface processing apparatus

Info

Publication number: WO2007111251A1
Application number: PCT/JP2007/056018
Authority: WO
Inventors: Mamoru Hino; Katsuhiro Imai; Hiroto Takeuchi; Yuichi Nakamori; Hidenori Takahashi; Susumu Yashiro
Original assignee: Sekisui Chemical Co., Ltd.
Priority date: 2006-03-28
Filing date: 2007-03-23
Publication date: 2007-10-04
Also published as: JP5162448B2; CN101405845A; TW200742504A; JPWO2007111251A1; CN101405845B; KR20080094817A; TWI380742B; KR101078506B1

Abstract

[PROBLEMS] To process a surface by a simple constitution even when a subject to be processed is large. [MEANS FOR SOLVING PROBLEMS] A processing head (10) of a surface processing apparatus (1) is composed of a first unit (11L) and a second unit (11R). On these units (11), a hole row (34) for jetting out a processing gas is extended in a first direction. The first direction orthogonally intersects with a second direction wherein the subject to be processed is moved. The two units (11) are arranged by being shifted in the first direction and the second direction. The hole rows (34) of the two units (11) are overlapped when viewed from the second direction.

Description

Surface treatment equipment

Technical field

TECHNICAL FIELD [0001] The present invention relates to an apparatus for performing a surface treatment such as cleaning, surface modification, etching, ashing, film formation, etc., on a workpiece by spraying a treatment gas on the workpiece, and a plasma surface treatment apparatus or a thermal CVD apparatus. Etc. In particular, in plasma processing, the present invention relates to a so-called remote plasma processing apparatus in which an object to be processed is arranged outside an interelectrode space and a plasma formed between the electrodes is ejected toward the object. Background art

[0002] In the field of manufacturing flat displays such as liquid crystal panels, the objects to be processed have been increasing in size in recent years, and surface processing apparatuses are required to support large objects to be processed!

Patent Documents 1 and 2 describe a plasma surface treatment apparatus in which two electrode rows each having a plurality of electrodes arranged in parallel with the longitudinal direction are provided, and a slit-like discharge space is formed between the two electrode rows. Yes. Even if each electrode is short, the slit-shaped discharge space can be made to have a length corresponding to the width dimension of the large workpiece. By spraying the processing gas that has been converted into plasma in the slit-like discharge space onto the object to be processed, the entire width of the object to be processed can be processed at once. The object to be processed is conveyed in a direction orthogonal to the longitudinal direction of the electrode (the extending direction of the slit-shaped discharge space).

Patent Documents 3 and 4 describe that an electrode module in which a plurality of electrodes are arranged in a direction orthogonal to the longitudinal direction is provided in two front and rear stages along the longitudinal direction. A slit-like discharge space is formed between adjacent electrodes of each electrode module. The front electrode module and the rear electrode module are shifted by a half of the juxtaposition pitch in the juxtaposition direction of the electrodes. Therefore, the slit-like discharge spaces at the front and rear stages are also shifted by a half pitch. The object to be processed is transported in the longitudinal direction of each electrode and thus in the longitudinal direction of each slit-like discharge space.

Patent Document 1: Japanese Patent Laid-Open No. 2005-302685

Patent Document 2: JP 2005-302686 A Patent Document 3: Japanese Patent Laid-Open No. 2005-135892

Patent Document 4: Japanese Unexamined Patent Publication No. 2005-333096

Disclosure of the invention

Problems to be solved by the invention

[0003] In order to align a plurality of units including an electrode module in a straight line, no wiring or piping is provided at the end facing the adjacent unit, or a support portion with a gantry at a portion other than the end. The present invention aims to provide a surface treatment apparatus that can handle a large object to be processed with a simple configuration.

Means for solving the problem

[0004] In order to solve the above problems, the present invention provides a device for spraying a processing gas onto the surface of an object to be processed and treating the surface!

A first unit having a first hole row for ejecting the processing gas, the first hole row extending in a first direction;

A second unit having a second hole row for ejecting the processing gas, the second hole row extending in the same direction as the first hole row;

A moving mechanism for moving the object to be processed relative to the first and second units in a second direction orthogonal to the first direction;

With

The first unit and the second unit are arranged so as to be displaced from each other in the first direction and in the second direction.

Thereby, even if a to-be-processed object is large sized, it can surface-treat with a simple structure.

[0005] An end on the second unit side in the longitudinal direction of the first hole row and an end on the first unit side in the longitudinal direction of the second hole row are viewed in the first direction when viewed in the second direction force. It is desirable that they overlap.

As a result, at the end of the hole row of each unit, the processing capacity is reduced due to deactivation of the processing gas. Even if it is lower than the center of the hole row, by overlapping the two units, the processing capacity at this overlap portion can be sized to be the sum of the two lower processing capacities. The processing ability equivalent to the part can be obtained.

[0006] A gantry,

A connection mechanism for connecting the first unit to the frame so that the position of the first unit can be adjusted in the first direction;

Is preferably further provided.

As a result, it is possible to absorb assembly errors along the first direction and adjust the width of the overlap.

[0007] a gantry,

A connection mechanism for connecting the first unit to the frame so that the position of the first unit can be adjusted in a third direction orthogonal to the first direction and the second direction;

Is preferably further provided.

As a result, the assembly error along the third direction is absorbed, the distance between the unit and the workpiece (working distance) is adjusted, and the processing of the first processing area due to individual differences between units, etc. It is possible to correct unevenness between the degree and the degree of treatment in the second treatment area.

[0008] a gantry,

A coupling mechanism that couples the first unit to the frame such that the angle seen from the first direction is adjustable;

Is preferably further provided.

As a result, the angle error seen from the first direction is absorbed, the gas blowing direction to the workpiece is adjusted, the processing state of the first processing area and the second state due to individual differences between units, etc. Unevenness with the processing state of the processing area can be corrected.

[0009] a gantry;

A coupling mechanism that couples the first unit to the frame such that the angle seen from the second direction can be adjusted;

Is preferably further provided. As a result, the angle error seen from the second direction is absorbed, the gas blowing direction to the workpiece is adjusted, the processing state of the first processing area and the second Unevenness with the processing state of the processing area can be corrected.

[0010] a gantry,

A pair of coupling mechanisms provided at both ends of the first unit in the first direction, respectively, to connect the first unit to the mount so that the position of the first unit can be adjusted in a third direction orthogonal to the first direction and the second direction. When,

Is preferably further provided.

As a result, the angle of the second unit force can be adjusted as well as the first unit can be adjusted in the third direction.

[0011] a gantry,

The first unit is provided at each of four corners viewed from a third direction orthogonal to the first direction and the second direction, and the first unit is mounted on the frame in a third direction orthogonal to the first direction and the second direction. 4 linkages that can be adjusted to the position,

Is preferably further provided.

As a result, it is possible to adjust the angle of the first direction force and the second direction force as well as adjusting the position of the first unit in the third direction.

[0012] a gantry,

A coupling mechanism for coupling the first unit to the frame;

The connecting mechanism further comprises:

A supported portion provided in the first unit;

A unit support portion provided on the gantry and facing the supported portion in a third direction orthogonal to the first direction and the second direction;

First and second connecting shafts provided to extend in the third direction between the supported portion and the unit supporting portion;

A first restricting portion that is provided on the first connecting shaft and restricts the supported portion from allowing the supported portion to move away from the unit supporting portion along the third direction;

The third connecting shaft is provided, and the supported portion is configured to support the unit supporting portion with respect to the third It is preferable to have a second restricting portion that allows approaching in the direction and restricts the force to move away! /.

As a result, the first unit can be supported so that the position of the first unit can be adjusted in the first direction and the third direction, and mounting errors in the first direction and the third direction can be absorbed.

[0013] One of the supported portion and the unit support portion is formed with a through hole for inserting and connecting the first connecting shaft or the second connecting shaft. It is preferable that the long hole is oriented in the first direction.

This makes it possible to adjust the position of the first unit in the first direction with respect to the gantry, absorbs assembly errors along the first direction of the first unit, and positions the first unit in the first direction with respect to the second unit. And the width of the overlap can be adjusted.

[0014] The first connecting shaft is a screw member whose axis is directed in the third direction,

The first restricting portion is screwed to an end portion of the first connecting shaft on the supported portion side, and an end portion of the first connecting shaft on the unit support portion side is abutted against the unit support portion, It is preferable that the first restricting portion is in contact with or joined to a surface of the supported portion facing the unit support portion.

Accordingly, with a simple configuration, the supported portion can be allowed to move away from the unit support portion along the third direction and can be prevented from approaching.

[0015] The second connecting shaft is a screw member having an axis line in the third direction,

A screw member in which the second restricting portion is provided at an end portion of the second connecting shaft on the supported portion side, and an end portion of the second connecting shaft on the unit supporting portion side is screwed to the unit supporting portion. And

It is preferable that the second restricting portion is in contact with a surface of the supported portion that faces away from the unit support portion.

Accordingly, with a simple configuration, the supported portion can be allowed to approach the unit support portion along the third direction and can be restricted from moving away.

[0016] It is preferable that the second unit connected only by the first unit is also connected to the gantry by the same connection mechanism as the first unit.

[0017] The first unit includes a pair of electrodes each extending in the first direction. The poles may be opposed to each other in the second direction to form a discharge space between them, and the downstream end of the discharge space may be continuous with the first hole array. The second unit is preferably configured in the same way

Thereby, plasma surface treatment can be performed.

The present invention is suitable for generating plasma and performing surface treatment near atmospheric pressure. Near atmospheric pressure (substantially normal pressure) refers to the range of 1. 013 X 10 ⁴ to 50. 663 X 10 ⁴ Pa. Considering the ease of pressure adjustment and simplification of the equipment configuration, 1. 333 X 10 ⁴ to: LO. 664 X 10 ⁴ Pa (100 to 800 Torr) force S, preferably 9. 331 X 10 ⁴ to 10. 397 X 10 ⁴ Pa (700 to 780 Torr) force S, more preferable.

Further, the present invention provides an apparatus for spraying a processing gas on the surface of an object to be processed and processing the surface.

A processing head including a plurality of units extending in a first direction;

A moving mechanism for moving the object to be processed relative to the processing head in a second direction orthogonal to the first direction;

With

Each of the plurality of units has a row of holes extending in the first direction for ejecting the processing gas;

Some of the plurality of units are spaced apart in the first direction and arranged at a constant pitch.

The first unit row,

The other unit of the plurality of units is spaced apart in the first direction and the first unit row

Are arranged at the same pitch to form the second unit row,

The first unit row and the second unit row are arranged in the second direction, and the unit of the first unit row and the unit of the second unit row are shifted by about half of the pitch in the first direction. ! / Speaking.

Thereby, even if a to-be-processed object is large sized, it can surface-treat with a simple structure. Space can be secured at the end of each unit in the longitudinal direction. Connection mechanism), piping and wiring can be easily arranged.

The invention's effect

[0019] According to the present invention, surface treatment can be performed with a simple configuration even if the workpiece is large.

Brief Description of Drawings

FIG. 1 is a plan view of an atmospheric pressure plasma surface treatment apparatus according to a first embodiment of the present invention.

FIG. 2 is a front view of the surface treatment apparatus taken along line II-II in FIG.

FIG. 3 is a composite diagram of a plan view showing electrodes and ejection openings of the surface treatment apparatus and a graph of gas ejection amount or treatment rate at each position of the ejection opening.

FIG. 4 is a side sectional view showing a connecting mechanism of units of the surface treatment apparatus.

[FIG. 5] (a) is a front sectional view of the coupling mechanism along the VA-VA line in FIG. 4, and (b) is a front sectional view of the coupling mechanism along the VB-VB line in FIG. is there.

[Fig. 6] Front sectional view showing the unit displaced, ( _a ) corresponds to Fig. 5 (a), (b) corresponds to Fig. 5 (b), and the solid line represents the unit. The state of displacement to the right, the alternate long and two short dashes line is the state where the mute is displaced to the left, and the three-dot chain line is the state where the unit is displaced upward.

FIG. 7 is a front view showing a state where the first unit is tilted when viewed from the front (second direction).

FIG. 8 is a side view showing a state in which the first unit is tilted when viewed from the side (first direction).

FIG. 9 is a front sectional view showing a modified example of the coupling mechanism, where (a) corresponds to FIG. 5 (a) and (b) corresponds to FIG. 5 (b).

FIG. 10 is a front sectional view showing a state in which the unit is displaced in FIG. 9. (a) corresponds to FIG. 9 (a), (b) corresponds to FIG. 9 (b), The solid line shows the unit displaced right, the two-dot chain line shows the unit displaced left, and the three-dot chain line shows the unit displaced upward.

FIG. 11 is a combination of a plan view and a graph of a processing rate at each position of the ejection port, showing a modification in which the slit-shaped ejection ports of the left and right units do not overlap.

FIG. 12 is a plan view showing a modification in which two unit rows are constituted by four units.

FIG. 13 is a plan view showing a modified example in which unit rows are arranged in four rows.

FIG. 14 is a perspective view showing a modification of the processing head structure. FIG. 15 is a perspective view showing a modification in which another aspect of the hole array structure is applied to the processing head structure of FIG.

FIG. 16 is a perspective view showing a modified example in which another aspect of the hole array structure is applied to the processing head structure of FIG.

FIG. 17 is a perspective view showing a modification in which another aspect of the hole array structure is applied to the processing head structure of FIG.

Explanation of symbols

W Workpiece

1 Atmospheric pressure plasma surface treatment equipment

2 Process gas source

2a Supply path

3 Power supply circuit

10 Processing head

11 units

11L 1st unit

11R 2nd unit

12 Rectifier module

13 Discharge module

20 Roller conveyor (movement mechanism)

21 Roller conveyor frame

31, 32 electrodes

33 Space between electrodes

34 Outlet

34L 1st outlet (1st hole row)

34R 2nd outlet (second hole row)

34a small hole

340L Small hole force 1st hole row

340R Small hole force 2nd hole row 40 mount

41 Support beam

50 coupling mechanism

51 Base block (unit support)

51b Female thread hole in base block

52 Support block (1st regulation part)

52a Female thread hole of support block

52b Support block through hole

53 Bracket

53v side plate

53h Upper plate (supported part)

53a, 53b Through hole (long hole)

54 1st connecting shaft (screw member)

55 Second connecting shaft (screw member)

55a Head of second connecting shaft (second regulating part)

110 unit row

110A 1st unit row

110B 2nd unit row

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described.

1 and 2 show an atmospheric pressure plasma surface treatment apparatus 1 for treating the workpiece W. FIG. The workpiece W is a large-area glass substrate used as, for example, a flat panel of a liquid crystal television or a plasma television. The surface treatment apparatus 1 performs, for example, a hydrophilic treatment on the surface of the glass substrate W.

The surface treatment apparatus 1 includes a treatment head 10 and a moving mechanism 20.

As shown in FIG. 2, the moving mechanism 20 is configured by a roller conveyor. The roller conveyor 20 moves the workpiece W in the front-rear direction (second direction, a direction perpendicular to the paper surface in FIG. 2). [0024] The moving mechanism 20 may be composed of a stage for setting the workpiece W, which may be a belt conveyor instead of the roller conveyor 20, and a drive unit for moving the stage. The stage may be fixed and the processing head 10 may move relative to it.

A gantry 40 is assembled above the left and right frames 21 of the roller conveyor 20, and the processing head 10 is installed on the gantry 40. The processing head 11 is disposed above the roller conveyor 20, and the processing head 10 and the workpiece W are opposed vertically (in the third direction). The workpiece W is passed under the processing head 10.

As shown in FIG. 1, the processing head 10 includes two (plural) units 11 and 11. These units 11 and 11 have the same configuration. Hereinafter, when these two units 11 and 11 and their components are distinguished from each other, “L” is added to the reference numerals of the left unit 11 and its constituent elements, and the reference numerals of the right unit 11 and its constituent elements are added. Add “R”. One of the left and right units 11 (for example, the left unit 11L) constitutes a “first unit”, and the other unit 11 constitutes a “second unit”.

As shown in FIG. 2, each unit 11 includes an upper rectification module 12 and a lower discharge module 13. These modules 12 and 13 extend to the left and right (first direction), respectively. A supply path 2a extends from the processing gas source 2, and the supply path 2a is branched and connected to the rectifying modules 12L and 12R of the left and right units 11L and 11R, respectively. Although illustration is omitted, the rectification module 12 has a rectification path composed of slits, small holes, chambers, etc., and the processing gas from the supply path 2a is made uniform in the left-right direction in the rectification path. !

For example, nitrogen is used as the treatment gas for hydrophilization.

As shown in FIG. 3, the discharge module 13 accommodates a pair of electrodes 31 and 32.

Each electrode 31, 32 extends to the left and right. The pair of electrodes 31, 32 are arranged in parallel so as to face each other in the front-rear direction. One electrode 31 is connected to the power supply circuit 3. The other electrode 32 is electrically grounded. A solid dielectric (not shown) is provided on at least one facing surface of these electrodes 31 and 32.

[0029] A slit-like inter-electrode space 33 is formed between the pair of electrodes 31, 32 extending in the left-right direction. It is. By supplying a voltage from the power supply circuit 3 to the electrode 31, an atmospheric pressure glow discharge is formed between the electrodes 31 and 32, and the interelectrode space 33 becomes a discharge space.

The upper end portion of the interelectrode space 33 is connected to the rectification path of the rectification module 12. The processing gas force made uniform by the rectifying module 12 from side to side is introduced uniformly in the longitudinal direction of the inter-electrode space 33. The plasma is generated by the atmospheric pressure glow discharge.

As shown in FIG. 2, at the bottom of the discharge module 13, an ejection port 34 (hole array) connected to the lower end of the interelectrode space 33 is provided. As shown in FIGS. 2 and 3, the ejection port 34 has a slit shape extending in the left-right direction. The lower end force ejection port 34 of the interelectrode space 33 may be configured. The processing gas introduced into the interelectrode space 33 is ejected from the ejection port 34 at the lower end.

Slit-like spout 34 of one of the left and right units 11 (for example, slit-like spout 34L of the left unit 11L) Force A “first hole row” and a slit-like spout 34 of the other unit 11 Constitutes the "second hole row"!

As shown in FIG. 1 and FIG. 3, the two units 11, 11 and thus the slit-like ejection ports 34, 34 are arranged so as to be shifted from side to side and from side to side.

The amount of deviation in the front-rear direction of the left outlet 34L and the right outlet 34R is more preferably about 150 mm, preferably over 0 and about 2 OO mm or less.

[0033] The right end of the left unit 11L and the left end of the right unit 11R overlap in the left-right direction when viewed from the front-rear direction. As a result, the right end portion of the left slit-like outlet 34L and the left end portion of the right slit-like outlet 34R are overlapped with each other when viewed from the front-rear direction.

[0034] The ratio of the overlap amount to the total length of each ejection port 34 is preferably about 5% or less, more preferably about 3% or less.

The length of each ejection port 34 is, for example, about 100 to 2000 mm. In this case, the amount of overlap between the left and right outlets 34L, 34R is preferably about 50 mm or less.

[0035] The graph of FIG. 3 shows the amount of ejection from each position of the left and right slit-shaped ejection ports 34L, 34R. In the middle part (excluding both ends) of the longitudinal direction of each slit-like outlet 34, Each eruption amount is almost constant. At both ends of the ejection port 34 in the longitudinal direction, the ejection amount decreases rapidly. Therefore, the eruption curve by each eruption port 34 is almost trapezoidal. By arranging the left and right outlets 34L, 34R to overlap, the slope at the right end of the left ejection curve and the slope at the left end of the right ejection curve intersect each other. This intersection should be at a position where the right and left jets are about 20% to 80% of the maximum value (upper side of the trapezoid), which is preferably about 50%. Is more preferable.

The force near the left end of the part with the constant ejection volume at the left outlet 34L is also set so that the distance to the right end of the part with the constant ejection volume at the right outlet 34R is almost the same as the width of the workpiece W. Is preferred.

[0036] The above-mentioned ejection amount corresponds to the processing rate. In the hydrophilization treatment, this corresponds to the contact angle of the treated object surface after the treatment. In the graph, the treatment rate of the central part excluding both ends of the first treatment region R1 due to the gas ejected from the left ejection port 34L is substantially constant, and decreases sharply at both ends! Right side outlet 34R The processing rate of the central part excluding both ends of the second treatment area R2 by the gas blown by the force is almost constant, and decreases sharply at both ends! / The processing rate at the right end of processing area R1 on the left has suddenly decreased! The part where the processing rate suddenly decreases at the left end of the processing area R2 on the right side just overlaps. The overlap region is indicated by “R3”.

[0037] The support structure of the unit 11 will be described.

As shown in FIG. 1, short support beams 41 extending in the front-rear direction are provided at a plurality of predetermined positions of the gantry 40. The left and right ends of each unit 11 are supported on the support beam 41. As shown in FIG. 2, the support beam 41 and the left and right ends of each unit 11 are connected via a connecting mechanism 50.

[0038] The coupling mechanism 50 is configured as follows.

As shown in FIG. 1, brackets 53 are provided at both left and right ends of the unit 11, respectively. As shown in FIGS. 4 and 5, each bracket 53 includes a side plate portion 53v fixed to the end surface of the unit 11, and an upper plate portion 53h (supported portion) in which the upper end force of the side plate portion 53v is also projected horizontally. It has an inverted L-shaped cross section and extends back and forth. As shown in Figure 1, upper plate part 53h A pair of through holes 53a and 53b are formed at both ends in the longitudinal direction. These through-holes 53a and 53b are long holes with their long axes facing left and right. The pair of through holes 53a and 53b are arranged in the front-rear direction.

As shown in FIG. 4 and FIG. 5, a base block 51 (unit support portion) is fixed to the upper surface of each support beam 41. The base block 51 has a rectangular cross section and extends in the same direction as the support beam 41. Female screw holes 5 lb are formed at both ends of the upper surface of the base block 51 in the longitudinal direction. The base block 51 is separated from the lower side of the upper plate portion 53h of the bracket 53 and faces the upper plate portion 53h.

[0040] Between each base block 51 and the upper plate portion 53h of the bracket 53, a support block 52 (first restriction portion) is disposed. The support block 52 has a rectangular cross section and extends in the same direction as the base block 51. At both ends in the longitudinal direction of the support block 52, female screw holes 52a and through holes 52b are formed side by side so as to form a pair. These holes 52a and 52b penetrate the support block 52 in the vertical direction, respectively.

As shown in FIGS. 4 and 5 (a), one elongated hole 53a of the bracket 53 and the female screw hole 52a of the support block 52 are arranged vertically. A first connecting shaft 54 extending vertically is disposed in the holes 53a, 52a. The first connecting shaft 54 is configured by a bolt (screw member). The head of the bolt 54 is slightly separated above the upper plate portion 53h of the bracket 53. The leg portion of the bolt 54 passes through the long hole 53 a of the bracket 53 and is screwed into the female screw hole 52 a of the support block 52. The front end portion (lower end portion) of the bolt 54 protrudes from the lower surface force of the support block 52 and is abutted against the upper end surface of the base block 51. The bolt 54 supports the support block 52 in a state separated from the base block 51 upward. On the upper surface of the support block 52, an upper plate portion 53h of the bracket 53 is placed. As a result, the units 11L and 11R are supported so that upward displacement is permitted and downward displacement is restricted.

[0042] As shown in Figs. 4 and 5 (b), the other elongated hole 53b of the bracket 53, the through hole 52b of the support block 52, and the female screw hole 51b of the base block 51 are aligned vertically. . A second connecting shaft 55 extending vertically is disposed in the holes 53b, 52b, 5 lb. The second connecting shaft 55 is configured with a bolt (screw member) longer than the first connecting shaft 54. Bolt 55 is The long hole 53b of the racket 53 and the through hole 52b of the support block 52 are inserted, and the tip (lower end) is screwed into the female screw hole 51b of the base block 51. As shown in FIG. 4, the heads 55a (second restricting portions) of the bolts 55 are in contact with the upper surfaces of the brackets 53 on both sides in the short direction of the long holes 53b. As a result, the bolt 55 restricts upward displacement while allowing downward displacement of the unit 11.

[0043] The bolt head 55a, the support block 52, and the upper plate portion 53h of the force bracket 53 are also sandwiched in the vertical direction. Thereby, the unit 11 is positioned and fixed.

As shown in FIG. 1, the coupling mechanisms 50 including the bolts, that is, the first and second coupling shafts 54 and 55, are arranged at the four front and rear, right and left corners of each unit 11, respectively.

[0045] According to the surface treatment apparatus 1 configured as described above, after the processing gas power supply path 2a of the processing gas source 2 is passed through the rectifying module 12 of each unit 11, It is introduced into the interelectrode space 33 of the discharge module 13. At the same time, a voltage is supplied from the power supply circuit 3 to the electrode 31 of each discharge module 13, whereby the interelectrode space 33 becomes a plasma discharge space, and the processing gas is turned into plasma. The plasma processing gas force is ejected from each slit-like ejection port 34 and blown to the workpiece W conveyed by the roller conveyor 20. Thereby, surface treatment such as hydrophilization of the workpiece W can be performed.

[0046] By arranging a plurality of units 11 on the left and right, the entire width of the workpiece W can be processed. On the other hand, the lengths of the electrodes 31 and 32 of each unit 11 can be shortened, and deformation due to Coulomb force or thermal expansion can be suppressed.

By shifting the units 11 and 11 back and forth, the longitudinal ends of each unit 11 can be prevented from interfering with each other, and the flexibility of wiring and piping and the support structure of the unit 11 can be increased. Thus, the configuration can be simplified.

[0047] As shown in FIG. 3, by overlapping the ends of the left and right ejection ports 34L, 34R as viewed from the direction of conveyance of the workpiece W, the right end of the left ejection port 34L ( It is possible to overlap the part where the ejection volume suddenly decreases and the left end of the right ejection port 34R (the part where the ejection volume suddenly decreases! As a result, it is possible to prevent a process missing area from being formed between the left processing area R1 and the right processing area R2. The insufficiently processed portion R3 at the right end of the processing region Rl on the side and the insufficiently processed portion R3 at the left end of the right processing region R2 can be superimposed on each other, and the processing rate of this portion R3 is determined by each processing rate. The processing rate can be adjusted to be equal to the processing rate at the center of regions Rl and R2. Thereby, the uniformity of processing can be secured.

Ideally, uniform processing can be performed by making the left and right gas ejection amount graphs intersect at 50% of the flat part in the center.

[0048] As shown by solid lines and two-dot chain lines in FIGS. 6 (a) and 6 (b), the position of the bracket 53 can be adjusted in the longitudinal direction of the long holes 53a and 53b, that is, in the left-right direction. As a result, the position of the first unit 11 L can be adjusted in the left-right direction with respect to the second unit 11R. As a result, the assembly error in the left-right direction of the two units 11L and 11R can be absorbed. Furthermore, the region R3 where the left and right processing regions Rl and R2 overlap can be increased or decreased, and the processing in the overlapping region R3 can be adjusted so as not to be excessive or insufficient. As a result, the processing can be made more uniform.

[0049] Further, as shown by a three-dot chain line in Fig. 6 (a), the height of the support block 52 can be adjusted by adjusting the screwing amount of the bolt 54 and the support block 52. At this time, as shown by a three-dot chain line in FIG. 6 (b), the screw 55 is also adjusted so that the head 55a force of the bolt 55 hits the upper surface of the upper plate portion 53h of the S bracket 53. . As a result, the position of each unit 11 can be adjusted in the vertical direction, and the vertical assembly errors of the two units 11L and 11R can be absorbed.

[0050] Further, the heights of the support blocks 52, 52 at both ends can be adjusted to each other by adjusting the screwing amounts of the bolts 54, 54 and the support blocks 52, 52 at both left and right ends of the unit 11. As a result, the horizontal level of the unit 11 can be ensured, and assembly errors can be absorbed. For example, as shown in FIG. 7, when the first unit 11L is inclined from the front-rear direction (relative to the horizontal direction on the left and right), this can be corrected and leveled.

[0051] Further, the level or inclination angle of the support block 52 can be adjusted by adjusting the screwing amount of the bolts 54, 54 and the support block 52 before and after the unit 11 (both ends in the longitudinal direction of the bracket 53). Can be adjusted. As a result, the level of the unit 11 in the front-rear direction can be ensured, and assembly errors can be absorbed. For example, as shown in Figure 8, When the first unit 11L is tilted when viewed from the left-right direction (with respect to the front-rear horizontal direction), this can be corrected and leveled.

Normally, the angle adjustment amount of the unit 11 is very small, and the inclination of the unit 11L in FIGS. 7 and 8 is exaggerated.

[0052] The connecting mechanisms 50 at the four corners of each unit 11 can be used not only to ensure the level of the unit 11 but also to equalize the processing rates of the first and second units.

For example, as shown by the two-dot chain line in the graph of FIG. 3, when the ejection amount (processing rate) of the left unit 11L is larger than that of the right unit 11R, the height of the left unit 11L is increased. As a result, the amount of the gas having the left unit 11L force hitting the surface of the workpiece W can be reduced, and the processing rate of the left processing region R1 can be set to a predetermined level shown by the solid line in FIG. Alternatively, the height of the right unit 11R may be lowered. As a result, the amount of gas having the right unit 11R power hitting the surface of the workpiece W can be increased, and the processing rate of the right processing area R2 can be increased. As a result, the processing rates of the left and right processing regions Rl and R2 can be made uniform, and individual differences between the left and right units 11L and 11R can be absorbed.

Alternatively, as shown in FIG. 8, the angle of the left unit 11L may be adjusted so as to be inclined when viewed from the left-right direction. As a result, while the gas is ejected vertically from the right unit 11R, the gas can be ejected obliquely from the left unit 11L so as to be biased back and forth according to the downward force. As a result, in the same way as adjusting the unit height, it is possible to reduce the amount of gas of the left unit 11L force that hits the surface of the workpiece W, and the processing rate of the left processing region R1 is the predetermined rate shown by the solid line in FIG. Can be level. As a result, the processing rates of the left and right processing regions Rl and R2 can be made uniform, and individual differences between the left and right units 11L and 11R can be absorbed.

[0054] As shown by the broken line in the graph of FIG. 3, for example, the ejection amount (processing rate) of the left unit 11L is larger than that of the right unit 11R and the ejection amount (processing rate) of the left unit 11L itself is on the right side. If the left unit 11L is lifted as a whole, the amount of increase in the right end of the left unit 11L is the amount of increase in the left end. The horizontal level of the left unit 11L is adjusted so as to be larger (see FIG. 7). As a result, the processing rate of the left processing region R1 is reduced as a whole, and the processing rate of the right side of the processing region R1 is greatly reduced from that of the left side. As a result, the processing rate of the left processing region R1 can be set to a predetermined uniform state as shown by the solid line in FIG. 3, and as a result, the processing rates of the left and right processing regions R1 and R2 can be made uniform. Can absorb individual differences between the left and right units 11L and 11R.

Of course, in this case, as described above, instead of raising the left unit 11L, the right unit 11R is lowered or the left unit 11L is tilted back and forth as shown in FIG. You may decide to adjust the horizontal degree of a horizontal direction.

Next, another embodiment of the present invention will be described. In the following embodiments, the same components as those in the above-described embodiments will be denoted by the same reference numerals, and description thereof will be omitted as appropriate. FIG. 9 shows a modified example of the coupling mechanism 50. As shown in FIG. 9 (a), the through hole 53a for the first connecting shaft 54 of the bracket 53 is a hole having a perfect circular cross section, and is not a long hole. On the other hand, as shown in FIG. 9 (b), the through hole 52b for the second connecting shaft 55 of the support block 52 is a long hole with the long axis in the left-right direction. The cross section (long axis and short axis) of the long hole 52b of the support block 52 may be the same as the long hole 53b of the bracket 53. The long hole 52b of the support block 52 and the long hole 53b of the bracket 53 are connected in a straight line.

[0056] According to this modification, as shown by the solid line and the two-dot chain line in FIG.

During the adjustment, the first connecting shaft 54 and the support block 52 can be displaced left and right together with the bracket 53.

[0057] As shown in FIG. 11, each processing region Rl, R2 is larger than the length of the ejection port 34, for example, when the gas from the ejection port 34 of each unit 11 strikes the workpiece W while diffusing left and right. It may be. In such a case, the jet outlets 34L, 34R of the left and right units 11L, 11R do not overlap each other when viewed from the front-rear direction. The right end of the left outlet 34L may be positioned on the left side of the left end of the right outlet 34R. The right slope of the left processing area R1 and the left slope of the right processing area R2 overlap! /! In this case, the separation distance R4 between the left and right outlets 34L, 34R is preferably within 10 mm.

[0058] The number of units 11 of the processing head 10 is not limited to two, and the width of the workpiece W and each unit

It can be set appropriately according to the length of 11. For example, the processing head 10 shown in FIG. 12 includes four units 11. In these units 11, the adjacent objects are shifted left and right.

In addition, they are shifted back and forth and are arranged alternately.

More specifically, the processing head 10 in FIG. 12 has a unit row 100 on the rear side (upper side in FIG. 12).

A and a unit row 110B on the front side (lower side in FIG. 12). Two unit rows 1

Any one of 10 (for example, the unit row 110A) constitutes a “first unit row”, and the other constitutes a “second unit row”.

[0060] Each unit row 110 includes two (plural) units 11 and 11 arranged side by side.

. The pitch p of these left and right units 11 and 11 is larger than the length of each unit 11, and an interval (space s) is formed between them.

[0061] Units 11 and 11 in one unit row 110A and units 11 and 11 in the other unit row 110B

11 is shifted by a half pitch (pZ2) in the horizontal direction.

[0062] When one unit 11 in one unit row 110A constitutes a "first unit"

The unit 11 of the other unit row 110B that is shifted by a half pitch from the first unit constitutes a “second mute”.

[0063] The unit rows 110 are not limited to two rows, and three or more rows may be provided. For example, in the processing head 10 shown in FIG. 13, four unit rows 110 are provided. The units 11 and 11 in the unit rows 1 and 110 adjacent to each other in the front and back are shifted by a half pitch from side to side. One of the unit rows 110 and 110 adjacent to each other in the front and rear forms a “first unit row”, and the other forms a “second unit row”.

Since spaces _s are provided on both sides of each unit 11 in the longitudinal direction, it is possible to easily avoid interference of wiring and piping including the support structure such as the coupling mechanism 50.

FIG. 14 shows a modification of the processing head 11. A pair of electrodes 31 and 32 are disposed so as to face each other in the vertical direction. The upper electrode 31 is connected to the power supply circuit 3, and the lower electrode 32 is electrically grounded. Treatment under the lower electrode 32 Physical W is placed. The upper surface (one surface) of the lower ground electrode 32 is the surface that faces the power electrode 31 and forms the discharge space 33 with the electrode 31, and the lower surface (the other surface) of the electrode 32 is the workpiece W It is the surface which faces the arrangement part. A solid dielectric layer (not shown) for stabilizing the atmospheric pressure glow discharge is provided on at least one of the lower surface of the power electrode 31 and the upper surface of the ground electrode 32.

A slit-like ejection port 34 (hole array) extending in the first direction is formed at the center of the lower ground electrode 32 in the second direction. The ejection port 34L of the first processing head 11L and the ejection port 34R of the second processing head 11R overlap in the first direction.

[0066] Supply paths 2a from the processing gas source 2 (omitted in FIG. 14) are connected to both sides of the interelectrode space 33 in the second direction. The processing gas is introduced into the inter-electrode space 33 from both sides in the second direction of the inter-electrode space 33 of each processing head 11 to be converted into plasma, and is jetted downward from the ejection port 34 to the workpiece W. It comes to be sprayed.

According to this processing head structure, since the ground electrode 32 is disposed between the power supply electrode 31 and the workpiece W, the electric field directed from the power electrode 31 to the workpiece W can be shielded, and the workpiece can be processed. It is possible to reliably prevent abnormal discharge such as arc from falling on W.

[0067] The present invention is not limited to the above embodiment, and various modifications can be made.

For example, the first unit base and the second unit base may be separate.

The hole array includes not only one slit extending in the first direction but also a plurality of dot-shaped or short slit-shaped holes arranged in a line along the first direction. For example, as shown in FIG. 15, in the processing head structure of FIG. 14, a plurality of small holes 34a are arranged in a line in the first direction instead of the slit-like ejection openings 34 in the ground electrode 32. Also good. In the first processing head 11L, a row force first hole row 340L composed of these small holes 34a is formed. In the second processing head 11R, a row force second hole row 340R composed of these small holes 34a is formed. In each of the first and second processing heads, a plurality of hole rows extending in the first direction may be arranged side by side in the second direction. For example, as shown in FIG. 16, a plurality (three in this case) of slit-shaped jets 34 (34L, 34R) force are applied to the ground electrode 32 of the processing head structure of FIG. These may be provided side by side in the second direction. Somehow As shown in FIG. 17, there may be a row 340 (340L, 340R) force S of small holes 34a arranged in the first direction and a plurality of rows (here, three rows) in the second direction! /.

[0068] In the embodiment, of the pair of bolts 54, 55, the first connection shaft 54 is disposed inside the width direction (front-rear direction) of the unit 11, and the second connection shaft 55 is disposed outside. However, the first connecting shaft 54 may be disposed outside the unit 11 in the width direction, and the second connecting shaft 55 may be disposed outside.

In the modification of the coupling mechanism 50 in FIGS. 9 and 10, the bracket 53 and the support block 52 may be integrated. Alternatively, the support block 52 may be omitted, and the first connecting shaft 54 may be directly screwed to the bracket 52. In this case, the first connecting shaft 54 also serves as the “first regulating portion”.

A long hole with the long axis facing left and right (first direction) is formed in the gantry 40 and the unit support part, and the first connecting shaft or the second connecting shaft is inserted into the long hole so as to be displaceable in the first direction. It may be. The first and second connection shafts may be connected to the supported portion or the unit support portion by screwing nuts to the first and second connection shafts made of bolts.

A nut may be used instead of the support block 52 as the first restricting portion.

The first and second connecting shafts may be configured by one common bolt (screw member), and the first restricting portion and the second restricting portion made of nuts may be provided on the one bolt.

When the processing rate between the first and second units is made uniform, the gas supply amount is adjusted for each unit, or the gas supply amount is adjusted for each unit in parallel with the unit height and angle adjustment by the connection mechanism 50 described above. You may decide to adjust the recipe or adjust the power applied to electrode 31.

[0069] The present invention is not limited to plasma surface treatment as long as the processing gas is ejected from a group of hole arrays such as slits and applied to the object to be processed, and is not limited to plasma surface treatment, but by thermal CVD, HF (fluoric acid) vapor, or the like. It can also be applied to surface treatment without electrodes such as etching. In addition, etching with ozone, etching with CF, etc., film formation (CVD), cleaning, surface modification (hydrophilic treatment, repellent properties)

Four

It can be applied to various surface treatments such as water treatment.

The pressure condition of the process is not limited to a substantially normal pressure but may be a reduced pressure environment.

Industrial applicability The present invention can be used for surface treatment of glass for flat panels such as liquid crystal televisions and plasma televisions, and plasma surface treatment of substrates in semiconductor manufacturing.

Claims

The scope of the claims

[1] In an apparatus for spraying a processing gas onto the surface of an object to be processed and processing the surface,

With

The surface treatment apparatus according to claim 1, wherein the first unit and the second unit are disposed so as to be displaced from each other in the first direction and in the second direction.

[2] An end on the second unit side in the longitudinal direction of the first hole row and an end on the first unit side in the longitudinal direction of the second hole row are viewed in the first direction when viewed in the second direction force. The surface treatment apparatus according to claim 1, wherein the surface treatment apparatus overlaps with the surface treatment apparatus.

[3] The gantry,

The surface treatment apparatus according to claim 1, further comprising:

[4] The gantry,

The surface treatment apparatus according to claim 1, further comprising:

[5] The gantry,

The surface treatment apparatus according to claim 1, further comprising:

[6] The gantry,

The first unit is connected to the frame so that the angle seen from the second direction can be adjusted. A coupling mechanism;

The surface treatment apparatus according to claim 1, further comprising:

[7] The gantry,

The surface treatment apparatus according to claim 1, further comprising:

[8] The mount,

The surface treatment apparatus according to claim 1, further comprising:

[9] The gantry,

A coupling mechanism for coupling the first unit to the frame;

The connecting mechanism further comprises:

A supported portion provided in the first unit;

A second restricting portion that is provided on the second connecting shaft and restricts the supported portion from approaching and moving away from the unit support portion along the third direction;

The surface treatment apparatus according to claim 1, wherein the surface treatment apparatus comprises:

[10] A through hole for inserting and connecting the first connecting shaft or the second connecting shaft is formed in one of the supported portion and the unit supporting portion, and the through hole is a long shaft. 10. The surface treatment apparatus according to claim 9, wherein the surface treatment device is a long hole oriented in the first direction.

[11] The first connecting shaft is a screw member whose axis is directed in the third direction, and the first restricting portion is screwed to an end portion of the first connecting shaft on the supported portion side, An end of the first connecting shaft on the unit support portion side is abutted against the unit support portion, and the first restricting portion is in contact with or joined to a surface of the supported portion facing the unit support portion. The surface treatment apparatus according to claim 9.

[12] The second connecting shaft is a screw member having an axis line in the third direction,

The second restricting portion is provided at an end portion of the second connecting shaft on the supported portion side, and an end portion of the second connecting shaft on the unit supporting portion side is screwed to the unit supporting portion;

10. The surface treatment apparatus according to claim 9, wherein the second restricting portion is brought into contact with a surface of the supported portion that faces away from the unit support portion.

[13] The first unit includes a pair of electrodes each extending in the first direction, and the electrodes are opposed to the second direction to form a discharge space therebetween. The surface treatment apparatus according to claim 1, wherein a downstream end of the discharge space is continuous with the first hole row.

[14] In an apparatus for spraying a processing gas onto the surface of an object to be processed and processing the surface,

With

Some of the plurality of units are spaced apart in the first direction and arranged at a constant pitch to form a first unit row,

The other part of the plurality of units are separated in the first direction and arranged at the same pitch as the first unit row to form a second unit row,

The first unit row and the second unit row are arranged in the second direction, and the unit of the first unit row and the unit of the second unit row are shifted by about half of the pitch in the first direction. ! / Surface treatment equipment characterized by scoring.