JP2009129998A - Surface treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface treatment apparatus for preventing a loading effect in surface treatment. <P>SOLUTION: At a first nozzle section 30 of the surface treatment apparatus 1, a first exhaust hole 31 for jetting out reactive gas and a first suction hole 32 for sucking gas are formed while they are separated right and left (in a first direction). A workpiece W is relatively moved in a first direction to the first nozzle section 30 by a moving means 20. A second nozzle section 40 is arranged so that it faces the first nozzle section 30 vertically (in a second direction) while sandwiching a position where the workpiece W is moved relatively. At the second nozzle section 40, a second suction hole 42 for sucking gas between the first and second nozzle sections 30, 40 is formed, and the second suction hole 42 is allowed to oppose the first exhaust hole 31 in a second direction. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an apparatus for spraying a reactive gas onto an object to be processed and performing surface treatment such as film formation or etching.

In this type of surface treatment apparatus, a reactive gas is sprayed from a nozzle onto an object to be treated placed on a support portion such as a table for treatment. The nozzle and the support portion are moved relative to each other (scanned) so that the entire object to be processed can be processed.
JP-A-9-92493 JP 2002-151494 A

For example, as shown in FIG. 12, consider a case where a processing object W such as a glass substrate is placed on a plate-like stage S for processing. When the end of the stage S moves immediately below the nozzle N, the reactive gas F ejected from the nozzle N accumulates between the nozzle N and the end of the stage S in an unreacted dense state (FIG. 12). (A)). The edge part of the glass substrate W enters there, and is treated with the unreacted high-concentration reactive gas F (FIG. 12B). When the glass substrate W further moves and the central portion of the glass substrate W faces the nozzle N, the reaction has already progressed somewhat on the downstream side of the reactive gas F and is treated with the reactive gas F having a reduced concentration ( FIG. 12 (c)). Therefore, the amount to be processed is different between the end portion and the middle portion of the glass substrate W. This is called a loading effect.
The present invention has been made in view of the above circumstances, and an object thereof is to prevent a loading effect and improve processing uniformity.

The present invention has been proposed in view of the above circumstances, and is an apparatus for spraying a reactive gas onto an object to be processed to perform surface treatment,
A first nozzle part in which a first jet port for ejecting the reactive gas and a first suction port for sucking are formed apart in a first direction;
Moving means for moving the object to be processed relative to the first nozzle portion in the first direction;
A second nozzle portion disposed so as to oppose the first nozzle portion and a second direction orthogonal to the first direction across a position where the workpiece is relatively moved;
It has.
It is preferable that a second suction port for sucking a gas between the first nozzle portion and the second nozzle portion is formed in the second nozzle portion. The second suction port is preferably opposed to the first jet port in the second direction.
Accordingly, when the object to be processed is not located at the position facing the first nozzle portion, the reactive gas from the first jet port can be sucked into the second suction port and discharged. Therefore, it is possible to prevent unreacted high-concentration reactive gas from accumulating near the first nozzle part, and when the end of the object to be processed comes to a position facing the first nozzle part, it is prevented from being excessively processed. Can be prevented. That is, the loading effect can be prevented. As a result, the uniformity of processing can be improved.

The second suction port is preferably larger than the first jet port. As viewed from the second direction, it is preferable that the second suction port surrounds the first jet port, and the first jet port is located inside the second suction port. Accordingly, the reactive gas ejected from the first ejection port can be reliably sucked into the second suction port, and the reactive gas can be reliably prevented from staying around or diffusing.
The first nozzle portion may be provided with one or more first ejection ports and first suction ports alternately in the first direction.
In the second nozzle portion, a plurality of the second suction ports may be provided for each of the first ejection ports.

The second nozzle portion is formed with a second ejection port for ejecting a dilution gas for diluting the reactive gas toward the first nozzle in place of or in addition to the second suction port. May be.
As a result, when the object to be processed is not located at the position facing the first nozzle portion, the reactive gas from the first ejection port can be diluted with the dilution gas to reduce the concentration. Accordingly, it is possible to prevent excessive processing when the end portion of the object to be processed comes to a position facing the first nozzle portion, thereby preventing a loading effect. As a result, the uniformity of processing can be improved.
The diluted reactive gas is appropriately sucked from the first suction port (if the second nozzle part is provided with a second jet port in addition to the second suction port, the first suction port and the second suction port). Can be discharged. Note that the second suction port in the case where the second nozzle portion is provided with the second suction port in addition to the second suction port does not have to face the first jet port in the second direction. It may be shifted.

It is preferable that the second jet port is displaced so as not to face the first suction port in the second direction.
As a result, the dilution gas ejected from the second ejection port can be prevented from being directly sucked into the first suction port, and can be reliably mixed with the reactive gas from the first ejection port. Can be diluted.

It is preferable that a wall is provided so as to close a gap between ends of the first nozzle portion and the second nozzle portion in a third direction orthogonal to the first direction and the second direction.
Thereby, it is possible to prevent the reactive gas from diffusing from the end portion in the third direction, and it is also possible to prevent the processing from becoming uneven at the end portion in the third direction of the object to be processed.
When the object to be processed is located between the first nozzle and the second nozzle part, the distance between the wall and the object to be processed is such that a clearance is formed so that the object can be relatively moved. It is preferable that

  According to the present invention, the loading effect in the surface treatment can be prevented.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a surface treatment apparatus 1 used in an island etching process in a liquid crystal panel production line. The workpiece W is a non-alkali glass substrate for a liquid crystal panel. As shown in FIG. 2, the glass substrate W has a quadrangular shape. The dimension of the glass substrate W in the longitudinal direction (left and right direction in FIG. 2) is, for example, 1300 mm, and the dimension in the short direction (up and down direction in FIG. 2) is, for example, 1100 mm. On the surface (upper surface) of the glass substrate W, an amorphous silicon layer (not shown) is formed by CVD. This amorphous silicon layer is etched by a surface treatment apparatus.

As shown in FIG. 1, the surface treatment apparatus 1 includes a treatment housing 10 and moving means 20.
As shown in FIGS. 1 to 3, the processing housing 10 includes an upper top plate 11, a lower bottom plate 12, and front and rear walls 13 (front side and back side in FIG. 1), and the longitudinal direction thereof. Is a rectangular parallelepiped box shape facing left and right (first direction). The left and right ends of the processing housing 10 are open.
The left and right lengths of the processing housing 10 are, for example, 600 mm.
The height of the wall 13 (distance between the top plate 11 and the bottom plate 12) is, for example, about 20 mm.
The distance between the front and rear (third direction) walls 13 is slightly larger than the short dimension of the glass substrate W.

  As shown in FIGS. 1 and 2, a roller conveyor 20 is accommodated inside the processing housing 10 as a support and moving means for the workpiece W. The roller conveyor 20 includes a plurality of roller shafts 21 that are arranged at intervals in the left-right direction with the axis line in the front-rear direction (the direction orthogonal to the paper surface in FIG. 1). Both end portions of each roller shaft 21 are rotatably supported by bearings (not shown) provided on the wall 13. The wall 13 also functions as a frame of the roller conveyor 20. Each roller shaft 21 is provided with a roller 23. The thickness of the roller 23 is, for example, about 10 mm.

  The glass substrate W is placed on the roller 23 with the longitudinal direction facing left and right and the lateral direction facing back and forth, and is conveyed, for example, from right to left. At this time, as shown in FIG. 3, a slight clearance is formed between the glass substrate W and the wall 13 so that the glass substrate W can move. The distance between the top plate 11 and the glass substrate W is set to be about 10 mm, for example.

  As shown in FIG. 1, the top plate 11 of the processing housing 10 is provided with a first nozzle portion 30. A lower portion of the first nozzle portion 30 protrudes below the top plate 11 and faces the inside of the processing housing 10, and faces the intermediate portion of the roller conveyor 20 in the vertical direction. The glass substrate W passes under the first nozzle portion 30. The distance (work distance) between the bottom surface of the first nozzle part 30 and the glass substrate W passing therebelow is set to be about 2 mm, for example.

As shown in FIG. 3, the front and rear edges of the first nozzle portion 30 reach the wall 13. As shown in FIG. 4, three (plural) first ejection ports 31 and six (plural) first suction ports 32 are formed on the bottom surface of the first nozzle portion 30. Each of these first jet ports 31 and first suction ports 32 extends in a slit shape in the front-rear direction (up and down in FIG. 4), and is alternately arranged one or more at intervals from each other on the left and right. Here, three (a plurality) of sets each including one first jet port 31 and two first suction ports 32 on both sides thereof are arranged side by side. The lengths of the first jet port 31 and the first suction port 32 in the front-rear direction are substantially the same as or slightly larger than the short-side dimension of the glass substrate W, and both front and rear ends almost reach the wall 13. Yes.
The first jet nozzle 31 is disposed so as to avoid the roller shaft 21 and the roller 23 directly above.

  As shown in FIG. 1, the reactive gas supply source 2 is connected to each 1st jet nozzle 31 via the reactive gas supply path 2a. The reactive gas supply source 2 generates a reactive gas containing a reactive component according to the processing purpose and sends it to the first nozzle unit 30 via the reactive gas supply path 2a. Although not shown, a rectifying unit that equalizes the reactive gas from the reactive gas supply path 2a in the front-rear direction of the nozzle head (in the direction perpendicular to the plane of FIG. 1) is provided on the upper side of the first nozzle unit 30. The reactive gas is uniformly introduced in the longitudinal direction of the first ejection port 31 and ejected downward.

For example, in the etching of amorphous silicon, a gas containing an oxygen-based reaction component such as ozone and a fluorine-based reaction component such as hydrofluoric acid vapor is used as the reactive gas. Ozone can be generated by an ozonizer using oxygen (O ₂ ). The hydrofluoric acid vapor can be generated by adding water (H ₂ O) to a fluorine-containing material such as CF ₄ and turning it into plasma with a plasma generator. Instead of the ozonizer, oxygen-based reaction components such as ozone and oxygen radicals may be generated from an oxygen source by a plasma generation apparatus. You may decide to produce | generate a hydrofluoric acid vapor | steam and an oxygen-type reaction component with one plasma production | generation apparatus. The plasma generation apparatus has at least a pair of electrodes, generates plasma between these electrodes, and converts the raw material gas into plasma to generate reaction components. The plasma is preferably generated near atmospheric pressure. Here, the near atmospheric pressure refers to the range of ^{1.013 × 10 4 ~50.663 × 10 4} Pa, considering the convenience of easier and device configuration of the pressure adjustment, 1.333 × 10 ⁴ ~ 10.664 × 10 ⁴ Pa is preferable, and 9.331 × 10 ^{4 to} 10.9797 × 10 ⁴ Pa is more preferable.

  Each first suction port 32 is connected to the first suction / exhaust means 3 via the first suction / exhaust passage 3a. The first suction / exhaust means 3 includes a flow rate control valve, a suction pump, a detoxification facility, and the like.

  As shown in FIG. 1, a second nozzle portion 40 is provided on the bottom plate 12 of the processing housing 10. The second nozzle part 40 includes a suction chamber 41 fixed to the lower surface of the bottom plate 12 and three (plural) suction nozzles 42 protruding from the upper surface of the suction chamber 41. The suction chamber 41 substantially overlaps the first nozzle part 30 in plan view, and the front and rear edges reach the wall 13. As shown in FIG. 3, the space between the front end portions of the first nozzle portion 30 and the suction chamber 41 is closed by the front-side (right side in FIG. 3) wall 13. A space between the rear end portions of the first nozzle portion 30 and the suction chamber 41 is closed by a wall 13 on the rear side (left side in FIG. 3). The suction chamber 41 is connected to the second suction / exhaust means 4 via the second suction / exhaust passage 4a. The second suction / exhaust means 4 includes a flow control valve, a suction pump, detoxification equipment, and the like. The first suction / exhaust means 3 may also be used as the second suction / exhaust means 4.

  As shown in FIG. 1, the suction nozzle 42 penetrates the bottom plate 12 in the thickness direction and protrudes into the processing housing 10, and avoids the roller shaft 21 and the roller 23 and is adjacent to the left and right roller shafts 21. And the roller 23. The three suction nozzles 42 are spaced apart from each other on the left and right. As shown in FIG. 2, each suction nozzle 42 extends long in the front-rear direction (third direction). The length of the suction nozzle 42 in the front-rear direction is substantially the same as or slightly larger than the length of the glass substrate W in the short-side direction, and the front and rear end portions almost reach the wall 13.

  As shown in FIG. 5, the nozzle hole 42a of each suction nozzle 42 forms a second suction port. The upper end of each nozzle hole 42a is opened, and is opposed to the first jet port 31 in a one-on-one manner in the vertical direction (second direction). That is, as shown in FIG. 1, the left suction nozzle 42 is disposed directly below the left first ejection port 31. The central suction nozzle 42 is disposed immediately below the central first ejection port 31. The right suction nozzle 42 is disposed directly below the right first ejection port 31. The distance between the lower end of the first jet port 31 facing vertically and the upper end of the suction nozzle 42 is, for example, about 8 mm. The distance between the lower surface of the glass substrate W and the upper end of the suction nozzle 42 when the glass substrate W is positioned on the second nozzle portion 40 is, for example, about 1 mm.

  The width (dimension in the left-right direction) of the nozzle hole 42a is larger than the width (dimension in the left-right direction) of the first jet nozzle 31. For example, the width of the first nozzle 31 is about 0.5 mm, whereas the width of the nozzle hole 42a is about 5 mm. Therefore, the nozzle hole 42a surrounds the first outlet 31 in a plan view (viewed from the second direction), and the first outlet 31 is disposed inside the nozzle hole 42a.

A method for surface-treating the glass substrate W by the surface treatment apparatus 1 having the above configuration will be described.
The glass substrate W to be processed is inserted into the processing housing 10 through the opening at the right end of the processing housing 10 with the longitudinal direction turned to the left and right and the short side direction back and forth, and placed on the roller conveyor 20 and moved to the left. Let
At the same time, the reactive gas of the reactive gas supply source 2 is introduced into the first nozzle part 30 through the reactive gas supply path 2a, and is made uniform in the front-rear direction by a rectifying part (not shown) and then the first injection. It spouts downward from the outlet 31. Further, the first suction / exhaust means 3 is driven to perform gas suction from the first suction port 32. Further, the second suction / exhaust means 4 is driven to perform gas suction from the suction nozzle 42.

  As shown in FIG. 5, the reactive gas F ejected from the first ejection port 31 flows straight down and flows into the suction nozzle 42 before the glass substrate W reaches just below each first ejection port 31. Inhaled. Therefore, it is possible to prevent the reactive gas F from diffusing into the processing housing 10, and thus to prevent leakage and diffusion outside the processing housing 10.

As shown in FIG. 6, when the left end portion of the glass substrate W reaches just below the first jet port 31, a part of the reactive gas F ejected from the first jet port 31 is separated from the first nozzle unit 30. It flows to the right in the space 1a formed between the glass substrate W, and the remaining portion wraps around the outer edge of the glass substrate W and is sucked into the suction nozzle 42, or is immediately sucked into the first suction port 32 on the left side. Or At this time, the reactive component in the reactive gas FR flowing to the right comes into contact with the amorphous silicon layer on the upper surface of the glass substrate W to cause an etching reaction, and the amorphous silicon layer is etched. A reactive component in the reactive gas FR is consumed along with the etching reaction. Accordingly, the concentration of the reactive component of the reactive gas FR in the space 1a becomes lower toward the downstream side. Then, when the reactive gas FR reaches directly below the first suction port 32 on the right side of the first jet port 31, the reactive gas FR is sucked into the first suction port 32 and discharged.
As shown in FIG. 7, as the glass substrate W advances, the reactive gas FL that eventually flows to the left also comes into contact with the upper surface of the glass substrate W and contributes to the etching reaction. Also in the leftward flow FL, the concentration of the reaction component becomes lower toward the downstream side.

As shown in FIG. 8, when the central portion of the glass substrate W is positioned below the first nozzle, the reactive gas F ejected from each first ejection port 31 has two flows FL on the left and right sides in the space 1a. , FR, and is gradually sucked into the first suction ports 32 on the left and right sides while gradually reducing the concentration of reaction components by causing an etching reaction.
Therefore, the processing amount at the left and right end portions of the glass substrate W and the processing amount at the central portion are substantially the same. This can prevent the loading effect from occurring.
In addition, since the front and rear end portions of the glass substrate W face the wall 13 through a slight clearance, the processing amount of these front and rear end portions can be set to the same level as the central portion. .
Thereby, the whole glass substrate W can be processed uniformly.

Next, another embodiment of the present invention will be described. In the following embodiments, the same reference numerals are attached to the drawings for the same configurations as those already described, and the description thereof is omitted as appropriate.
9 and 10 show a second embodiment of the present invention. In this embodiment, a floating air stage 50 is used as the moving means. The floating air stage 50 also serves as a bottom plate of the processing housing 10. Walls 13 are provided at the edges of the front and rear of the floating air stage 50 (front and back in FIG. 9), and the top plate 11 is covered thereon.

As shown in FIG. 10, a plurality of rows (for example, five) of air ejection portions 51 that extend linearly from side to side are provided in the left and right portions of the floating air stage 50 except for the portion immediately below the first nozzle portion 30.
The width of the air ejection part 51 is, for example, 120 mm, and the pitch in the front-rear direction of the air ejection part 51 is, for example, 295 mm.

As shown in FIG. 9, a floating air supply port 52 is provided at the bottom of the floating air stage 50. An air supply source 5 outside the processing housing 10 is connected to a floating air supply port 52 via a floating air supply path 5a.
The air supply source 5 pumps pressurized clean dry air (CDA) to the floating air supply path 5a. This clean dry air is introduced from the floating air supply port 52 into an air passage (not shown) in the floating air stage 50, and is jetted upward from a large number of small holes 51a (FIG. 10) on the upper surface of the air ejection portion 51. It is like that. The glass substrate W is levitated by the blown air. The air ejection part 51 only needs to be able to eject air upward. Instead of the large number of small holes 51a, the air ejection part 51 is made of a porous member (for example, porous alumina, porous carbon, porous aluminum, etc.). It may be configured.

  As shown in FIGS. 9 and 10, the portion between the adjacent air ejection portions 51 of the floating air stage 50 is recessed slightly below the air ejection portion 51 to form a recess 53. A propelling roller 54 is provided in the recess 53. The propulsion rollers 54 slightly protrude from the upper surface of the air ejection part 51 and are arranged on the left and right at a pitch (for example, 1000 mm pitch) slightly shorter than the longitudinal dimension of the glass substrate W. By the rotation of the propulsion roller 54, the glass substrate W can be transported in one direction (for example, from right to left).

A portion immediately below the first nozzle portion 30 in the floating air stage 50 is a second nozzle portion 55. A second nozzle 56 and a second suction port 57 are formed in the second nozzle portion 55. The second jet ports 56 and the second suction ports 57 are formed in a slit shape extending in the front-rear direction, and are alternately arranged with a space left and right. The lengths of the second jet port 56 and the second suction port 57 in the front-rear direction are substantially the same as or slightly larger than the short-side dimension of the glass substrate W, and the front and rear ends almost reach the wall 13. Yes. The width (dimension in the left-right direction) of the second suction port 57 is larger than the width (dimension in the left-right direction) of the first jet port 31 and the second jet port 56.
For example, the width of the first ejection port 31 is about 2 mm and the width of the second ejection port 56 is about 0.5 mm, whereas the width of the second suction port 57 is about 5 mm.

  The second ejection port 56 is arranged so as to be shifted from directly below the first suction port 32 so as not to face the first suction port 32 in the vertical direction. A dilution gas supply path 6 a extends from the dilution gas supply source 6, and the dilution gas supply path 6 a is connected to each second ejection port 56. The dilution gas supply source 6 pumps the dilution gas to the dilution gas supply path 6a. As the dilution gas, a gas having no reactivity is used, and for example, air or nitrogen is used. When air is used as the dilution gas, the air supply source 5 may also be used as the dilution gas supply source 6.

  The second suction port 57 is disposed directly below the first jet port 31. The second suction / exhaust means 4 is connected to the second suction port 57 via the second suction / exhaust passage 4a. Thereby, when the glass substrate W does not enter between the first nozzle part 30 and the second nozzle part 55, the reactive gas from the first jet port 31 is sucked straight by the second suction port 57. Can be discharged. Further, the dilution gas is ejected from the second ejection port 56 toward the first nozzle unit 30. The dilution gas can be mixed with the reactive gas from the first jet port 31 to dilute the reactive gas and reduce the concentration of the reactive component. Since the 2nd jet nozzle 56 has shifted | deviated from directly under the 1st suction port 32, dilution gas is not sucked into the 1st suction port 32 as it is, and dilution of reactive gas can be performed reliably. Therefore, when the glass substrate W comes in, it does not suddenly come into contact with the high concentration reactive gas, the end portion of the glass substrate W can be prevented from being excessively processed, and the loading effect can be prevented.

  When the glass substrate W is positioned above the second nozzle portion 55, the floating state of the glass substrate W can be maintained by the dilution gas from the second jet port 56.

  FIG. 11 shows a modified example of the second embodiment, in which the second suction port 57 is arranged so as to be shifted from directly below the first jet port 31. In this case, the retention amount of the reactive gas between the first nozzle part 30 and the second nozzle part 55 is increased as compared with the second embodiment, but the reactive gas is sufficiently diluted with the dilution gas from the second jet port 56. be able to. Therefore, the loading effect can be sufficiently prevented.

The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope obvious to those skilled in the art.
For example, the numerical values such as dimensions described in the above embodiment are merely examples, and are not limited to these, and can be changed as appropriate.
The workpiece W is not limited to a glass substrate for FPD (flat panel display) such as a liquid crystal panel, and may be a silicon wafer, a resin film, or the like.
The processing content is not limited to the etching of the amorphous silicon layer, but may be etching of other components such as an oxide film or a nitride film, and is not limited to the etching, and may be the film formation of an amorphous silicon, an oxide film, or a nitride film. . The present invention is particularly suitable for surface treatment such as etching and film formation in which the loading effect is a problem. However, the present invention is not necessarily limited thereto, and hydrophilic treatment, water repellency treatment, and other various surface treatments. It is applicable to.
The processing gas is appropriately selected according to the composition of the workpiece W and the content of the surface treatment. For example, ozone, hydrofluoric acid vapor of the above embodiment, HF, COF ₂ , F ₂ , CO, NO, oxygen radical, nitrogen radical and the like can be mentioned.
The supporting part of the workpiece W is not particularly limited as long as it supports the workpiece W during processing, and is appropriately selected according to the workpiece W and the content of processing. For example, a suction hand may be used as the wafer support.
The suction hand may be moved together with the wafer by a manipulator (moving means) while the wafer is supported and fixed to the suction hand.
Instead of the floating air stage 50 of the first embodiment, a plate type stage on which the workpiece W is placed and fixed may be used, or even if this plate type stage is moved by the moving means. Good. In this case, it is preferable that the side part in the moving direction (first direction) of the plate-type stage does not protrude from the workpiece W. Accordingly, when the workpiece W is not at a position facing the first nozzle portion 30, the reactive gas can flow downward as it is to prevent stagnation, and loading of the end portion of the workpiece W in the first direction can be prevented. The effect can be prevented. More preferably, the side of the third direction (front-rear direction) orthogonal to the side of the plate-type stage in the first direction is not protruded from the workpiece W. The loading effect at the end of the workpiece W in the third direction can also be prevented.
The plate-type stage may be provided with a plurality of pins instead of the lift-up roller 23, and may be provided with suction holes for suction and fixation.
The moving mechanism is not limited to moving the workpiece W, and may move the nozzle portion, or may move both the nozzle portion and the workpiece W.
In the first embodiment, the second suction port 42a only needs to face the first jet port 31. For example, there is a portion that overlaps the first jet port 31 in plan view (viewed from the second direction). That's fine.
In the second embodiment, the second suction port 57 may be omitted. Dilution gas and reactive gas can be sucked and discharged from the first suction port 32.
When the atmospheric gas is introduced from the outside (for example, openings at the left and right ends of the processing housing 10) by suction from the first suction port 32 or the second suction ports 42a and 57, the reactive gas from the first jet port 31 is changed. In this case, the dilution gas ejection system including the second ejection port 56 and the dilution gas supply means 6 of the second embodiment can be omitted.
The first embodiment and the second embodiment may be combined with each other. For example, in the second embodiment, a roller conveyor 20 similar to that of the first embodiment may be used as a moving unit and a support unit for the workpiece W.

  The present invention can be used in a manufacturing process of a semiconductor device such as a liquid crystal panel.

1 is a front view of an overall configuration of a surface treatment apparatus according to a first embodiment of the present invention. It is a top view of the said surface treatment apparatus which follows the II-II line of FIG. It is side surface sectional drawing of the said surface treatment apparatus which follows the III-III line of FIG. It is a bottom view of the 1st nozzle part of the said surface treatment apparatus. It is an enlarged front view of the state before a to-be-processed object enters between the 1st nozzle part and the 2nd nozzle part of the said surface treatment apparatus. It is an enlarged front view of the state in which the edge part of a to-be-processed object is located directly under the 1st jet nozzle of the said 1st nozzle part. It is an enlarged front view of the state in which the edge part of the to-be-processed object passed a little just under the said 1st jet nozzle. It is an enlarged front view of the state where the center part of a processed object counters the 1st nozzle part. It is a front view of a surface treatment device showing a second embodiment of the present invention. It is a top view which follows the XX line of FIG. 9 of the surface treatment apparatus which concerns on the said 2nd Embodiment. It is a front view of the surface treatment apparatus, showing a modification of the second embodiment. It is a front view explaining the generation | occurrence | production mechanism of a loading effect, (a) shows the state which the to-be-processed object is not located in the lower part of a nozzle part, (b) is the state by which the edge part of a to-be-processed object is processed (C) shows a state in which the central portion of the workpiece is processed.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Surface treatment apparatus 1a Processing space 2 Reactive gas supply source 2a Reactive gas supply path 3 First suction exhaust means 3a First suction exhaust path 4 Second suction exhaust means 4a Second suction exhaust path 5 Air supply source 5a Floating air Supply path 6 Dilution gas supply source 6a Dilution gas supply path 10 Processing housing 11 Top plate 12 Bottom plate 13 Wall 20 Roller conveyor (moving means)
21 Roller shaft 23 Roller 30 First nozzle portion 31 First jet port 32 First suction port 40 Second nozzle portion 41 Suction chamber 42 Suction nozzle 42a Nozzle hole (second suction port)
50 Floating air stage (moving means)
51 Air ejection portion 51a Small hole 52 Floating air supply port 53 Recess 54 Protrusion roller 55 Second nozzle portion 56 Second ejection port 57 Second suction port F Reactive gas flow W Glass substrate (object to be processed)

Claims (7)

An apparatus for spraying a reactive gas onto an object to be treated to treat the surface,
A first nozzle part in which a first jet port for ejecting the reactive gas and a first suction port for sucking are formed apart in a first direction;
Moving means for moving the object to be processed relative to the first nozzle portion in the first direction;
A second nozzle portion disposed so as to oppose the first nozzle portion and a second direction orthogonal to the first direction across a position where the workpiece is relatively moved;
The second nozzle part is formed with a second suction port for sucking a gas between the first nozzle part and the second nozzle part, and the second suction port is connected to the first jet port. The surface treatment apparatus is opposed to the second direction.   The said 2nd suction port is larger than the said 1st jetting port, The said 1st jetting port is located inside the said 2nd suctioning port seeing from the said 2nd direction. Surface treatment equipment. In the first nozzle portion, the first jet port and the first suction port are alternately provided one or more in the first direction,
The surface treatment apparatus according to claim 1 or 2, wherein a plurality of the second suction ports are provided in the second nozzle portion for each of the first ejection ports.   The second nozzle part is further formed with a second ejection port for ejecting a dilution gas for diluting the reactive gas toward the first nozzle. A surface treatment apparatus according to claim 1. An apparatus for spraying a reactive gas onto an object to be treated to treat the surface,
A first nozzle part in which a first jet port for ejecting the reactive gas and a first suction port for sucking are formed apart in a first direction;
Moving means for moving the object to be processed relative to the first nozzle portion in the first direction;
A second nozzle portion disposed so as to oppose the first nozzle portion and a second direction orthogonal to the first direction across a position where the workpiece is relatively moved;
The surface treatment apparatus is characterized in that the second nozzle part is formed with a second jet outlet for jetting a dilution gas for diluting the reactive gas toward the first nozzle part.   6. The surface treatment apparatus according to claim 4, wherein the second ejection port is displaced so as not to face the first suction port in the second direction.   The wall is provided so that the end part of the 3rd direction orthogonal to the 1st direction and the 2nd direction of the said 1st nozzle part and the said 2nd nozzle part may be plugged up. A surface treatment apparatus according to claim 1.

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