JP2004342886A - Equipment and method of processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an equipment for processing substrate especially suitable for processing a large substrate in which an organic resist can be removed uniformly in a short time. <P>SOLUTION: The equipment 1 for processing substrate is provided with a roller 30 for carrying a substrate 200 to be processed in one direction while supporting the end face thereof, and a first nozzle body 10 and a second nozzle body 20 spaced apart from the substrate 200 to be processed. The first nozzle body 10 is provided with a first ejection opening 12 and a first suction opening 13 wherein first processing fluid for decomposing and removing organic resist is ejected from the first ejection opening 12 toward the processing surface 201 of the substrate 200, and the first processing fluid used for processing is sucked from the first suction opening 13. The second nozzle body 20 is provided with a second ejection opening 22 and a second suction opening 23 and second processing fluid is ejected from the second ejection opening 22 toward the rear surface 202 of the substrate 200, and the second processing fluid used for processing is sucked from the second suction opening 23. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate processing apparatus and a substrate processing method for decomposing and removing an organic resist used in a manufacturing process of a liquid crystal substrate and a semiconductor device, and more particularly, to a substrate processing apparatus utilizing the oxidative decomposition of organic substances by ozone. And a substrate processing method.
[0002]
[Prior art]
In a lithography process in a manufacturing process of a liquid crystal substrate or a semiconductor device, an organic resist is generally used as a mask for patterning. The organic resist needs to be removed from the substrate when the patterning is completed. Usually, for removing the organic resist, a sulfuric acid-hydrogen-peroxide mixture (SPM) heated to 100 ° C. or higher is used, or an organic solvent is used. In the method of removing the organic resist using the SPM or the organic solvent, a large amount of cost is required for a waste liquid treatment of a rinse water containing an acid and an organic substance, and an exhaust treatment facility for an acidic gas and an organic volatile component generated in the treatment apparatus is required. This requires a large amount of cost for installation and running costs of the exhaust treatment equipment.
[0003]
As a method of removing an organic resist capable of removing an organic resist at a low cost instead of the removal method having a large cost burden, a removal method utilizing the oxidative decomposition of organic substances by ozone is known. In the method of removing organic resist using ozone, the organic resist can be completely decomposed into carbon dioxide and water, and ozone is completely decomposed into oxygen by self-decomposition. There is no need to perform any processing. Therefore, it is not necessary to install special processing equipment as compared with the conventional method of removing organic resist using SPM or an organic solvent, which is very advantageous in terms of installation cost and running cost.
[0004]
In a method of removing an organic resist using ozone, ozone water or ozone gas (including these, referred to as an ozone-based fluid) is used as a treatment agent. Although the organic resist can be decomposed even when the treatment is performed using only the ozone fluid, there are some saturated hydrocarbons that cannot be decomposed by the ozone fluid alone. Therefore, in order to remove the organic resist more effectively, the hydroxyl radical is mainly added by adding an ozonolysis fluid as an accelerator to the ozone fluid or irradiating the ozone fluid with ultraviolet light. It is necessary to promote the generation of the radical active species. The radical active species represented by the hydroxy radical is rich in oxidizing properties, and completely decomposes saturated hydrocarbons that cannot be completely decomposed by an ozone fluid alone into carbon dioxide and water. On the other hand, it is known that these radical active species easily react with other radical species or ozone to change into oxygen and water.
[0005]
When the above-described removal method using ozone is adopted, reduction of the processing time is an important issue. The processing time can be reduced by changing various processing conditions. For example, by maintaining the processing temperature at a high temperature to promote the oxidative decomposition reaction of the organic resist by ozone, or by promoting the oxidative decomposition reaction by increasing the ozone concentration or hydroxy radical concentration near the substrate to be processed, It is possible to improve the processing efficiency and shorten the processing time.
[0006]
Incidentally, it is known that radical active species mainly composed of hydroxy radicals are immediately generated when an ozonolytic fluid is added to an ozone fluid. In addition, the rate of self-decomposition of ozone is proportional to the concentration of hydroxy ions or hydroxyl radicals in the ozone fluid. For this reason, if the ozone-decomposable fluid is applied to the ozone-based fluid in advance, when the processing fluid (a mixed fluid of the ozone-based fluid and the ozone-based decomposer) reaches the vicinity of the surface of the substrate to be processed, The concentration of ozone and the concentration of hydroxyl radical may already be significantly reduced. As described above, if the ozone-decomposable fluid is previously provided to the ozone-based fluid, the processing efficiency may be reduced. In consideration of this point, it is necessary to apply an ozone-decomposable fluid to the ozone-based fluid in the vicinity of the surface of the substrate to be processed.
[0007]
A substrate processing apparatus disclosed in Japanese Patent Application Laid-Open No. 2001-144006 (Patent Document 1) is an example of a substrate processing apparatus that has realized the application of the ozone-decomposable fluid near the surface to be processed. Patent Document 1 discloses that an ozone-dissolved water, which is an ozone-soluble fluid, and an ozone-decomposition catalyst, which is an ozone-decomposable fluid, are separately supplied to a surface to be processed of a rotating substrate, so that both liquids are supplied on an organic resist. Describes a substrate processing apparatus configured to mix. By using this substrate processing apparatus, the organic resist can be decomposed and removed in a short time.
[0008]
In addition, uniform processing on the surface to be processed of the substrate to be processed is one of the important issues. In order to realize uniform processing, for example, it is necessary to maintain the temperature of the substrate to be processed uniformly over the entire surface of the substrate to be processed, and to reduce the ozone concentration and the hydroxyl radical concentration near the surface of the substrate to be processed. It is also necessary to keep it uniform over the entire surface of the substrate to be processed.
[0009]
As a substrate processing apparatus that realizes uniform processing on the processing target surface of the processing target substrate, there is a substrate processing apparatus disclosed in Japanese Patent Application Laid-Open No. 2000-150349 (Patent Document 2). In Patent Document 2, a resist plate removing solution injection hole and an ozonized gas supply pipe are provided on a supply plate located opposite to a substrate, and the resist film removing solution and the ozonized gas are supplied to a rotating substrate by using these. There is disclosed a substrate processing apparatus for decomposing and removing an organic resist formed on a substrate by spraying. When a substrate processing apparatus having such a structure is used, since the resist removing solution is jetted uniformly from the fine resist removing solution jet holes provided on the entire surface of the supply plate, uniform processing on the surface to be processed can be achieved. Will be possible.
[0010]
[Patent Document 1]
JP 2001-144006 A
[0011]
[Patent Document 2]
JP-A-2000-150349
[0012]
[Problems to be solved by the invention]
However, the substrate processing apparatuses disclosed in Patent Literature 1 and Patent Literature 2 are rotary type substrate processing apparatuses that perform processing by rotating a substrate to be processed. In this type of substrate processing apparatus, since the substrates to be processed, which are the objects to be processed, are processed one by one, it takes time to mount and remove the substrates on the rotary stage, thereby reducing the processing time itself. However, it is difficult to shorten the working time as a whole. Therefore, as a result, the working efficiency cannot be drastically improved.
[0013]
In recent years, the size of semiconductor wafers and the size of liquid crystal substrates have been increasing, and in particular, liquid crystal substrates having a side length of more than 1 m have appeared. When processing such a large substrate, a rotary type substrate processing apparatus is not suitable. Normally, in a rotation type substrate processing apparatus, a substrate to be processed is suction-held on a rotary stage, but when a large substrate is sucked on the rotary stage, a large substrate may be cracked or chipped due to centrifugal force. This is not a preferable treatment method.
[0014]
Further, in the substrate processing apparatuses disclosed in Patent Documents 1 and 2 described above, when applied to a small substrate, the processing can be surely uniformized, but when applied to a large substrate, the substrate processing becomes difficult. It is unlikely that the mixed state of the ozone-based fluid and the ozone-decomposable fluid near the processing surface is maintained uniformly over the entire surface to be processed, and there is a concern that processing unevenness may occur.
[0015]
Further, in the substrate processing apparatuses disclosed in Patent Documents 1 and 2 described above, a hot plate embedded in a rotary stage is used as a heating means. When this hot plate is used, uneven heating tends to occur, resulting in uneven processing.
[0016]
As described above, when a rotation type substrate processing apparatus is employed, there is a limit in shortening the operation time. Therefore, in order to process a substrate to be processed in a short time, it is preferable to use a so-called flat-flow type single-wafer processing apparatus that performs processing while continuously transporting the substrate to be processed using a transport roller or the like. is there. However, each of the conventional single-wafer processing apparatuses targets a small substrate, and does not target a large substrate. This is because it was difficult to uniformly control the temperature of the substrate, the concentration of the processing fluid, and the like over the entire surface of the substrate when processing a large substrate. It is also because there were few requests to do so.
[0017]
Therefore, the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can remove an organic resist in a short time without processing unevenness. In particular, it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method suitable for processing a large-sized substrate.
[0018]
[Means for Solving the Problems]
A substrate processing apparatus according to the present invention is a substrate processing apparatus for removing an organic thin film formed on a surface to be processed of a substrate to be processed, comprising: a transport unit; a first nozzle body; a second nozzle body; The apparatus includes a processing fluid supply unit, a first processing fluid recovery unit, a second processing fluid supply unit, and a second processing fluid recovery unit. The transport unit transports the substrate to be processed in one direction while supporting the end surface of the substrate to be processed. The first nozzle body has a first opposing surface that is located away from the surface of the substrate to be processed. The second nozzle body has a second opposing surface located apart from the back surface of the substrate to be processed. The first processing fluid supply means jets a first processing fluid for decomposing and removing the organic thin film toward the surface of the substrate to be processed through the plurality of first ports provided on the first facing surface. The first processing fluid recovery unit sucks the first processing fluid ejected toward the processing surface of the processing target substrate through a plurality of first suction ports provided on the first facing surface. The second processing fluid supply unit jets the second processing fluid toward the back surface of the substrate to be processed through a plurality of second jet ports provided on the second facing surface. The second processing fluid recovery means sucks the second processing fluid ejected toward the rear surface of the substrate to be processed through the plurality of second suction ports provided on the second facing surface.
[0019]
With the substrate processing apparatus having the above configuration, it is possible to realize a single-wafer processing apparatus capable of decomposing and removing an organic resist while transporting a substrate to be processed. This makes it possible to process a large number of substrates in a short time.
[0020]
In the substrate processing apparatus according to the present invention, the pressure of the first processing fluid ejected by the first processing fluid supply means, the suction pressure of the first processing fluid by the first processing fluid recovery means, and the pressure of the second processing fluid supply means It is preferable that the apparatus further includes an ejection pressure and suction pressure adjusting means for adjusting the ejection pressure of the second processing fluid and the suction pressure of the second processing fluid by the second processing fluid recovery means.
[0021]
With this configuration, the substrate to be processed is transported in a state of being floated from the first nozzle body and the second nozzle body by the first processing fluid and the second processing fluid whose ejection pressure and suction pressure have been adjusted. As a result, the substrate to be processed can be uniformly supported over the entire surface, and the substrate to be processed can be processed without being damaged.
[0022]
In the above-described substrate processing apparatus according to the present invention, the gas for injecting a gas into an end of a gap located between the first nozzle body and the second nozzle body in a direction intersecting the transport direction of the substrate to be processed is provided. It is preferable to further include an injection unit.
[0023]
With such a configuration, the space between the first nozzle body and the second nozzle body to which the substrate to be processed is transported can be in a semi-closed state, so that the processing is stabilized. In addition, processing unevenness is less likely to occur near the edge of the substrate to be processed, and uniform processing can be performed over the entire surface of the substrate to be processed.
[0024]
In the above-described substrate processing apparatus according to the present invention, the first processing fluid supply unit includes an ozone fluid supply unit that supplies an ozone fluid, and an ozone decomposition fluid supply unit that supplies an ozone decomposition fluid. Preferably, the first ejection port includes an ozone fluid ejection port for ejecting the ozone fluid, and an ozone decomposition fluid ejection port for ejecting the ozone decomposition fluid.
[0025]
With this configuration, the ozone-based fluid and the ozone-decomposable fluid are mixed for the first time in the vicinity of the surface of the substrate to be processed. The concentration can be kept high, and the removal efficiency of the organic resist can be increased.
[0026]
In the substrate processing apparatus according to the present invention, the second processing fluid supply unit supplies the ultrasonic application water supply unit that supplies the ultrasonic application water and the fluid that is higher in temperature than the first processing fluid. It is preferable that the second jet port includes a high-temperature fluid supply unit, and the second jet port includes an ultrasonic-applied water jet port for jetting the ultrasonic-applied water, and a high-temperature fluid jet port for jetting the high-temperature fluid.
[0027]
With this configuration, the temperature of the first processing fluid in the vicinity of the processing surface of the processing target substrate can be maintained at a high temperature, so that the efficiency of removing the organic resist can be improved. . In addition, since the agitating action of the first processing fluid in the vicinity of the surface to be processed of the substrate to be processed is obtained by the ultrasonically applied water, the efficiency of removing the organic resist can be further improved.
[0028]
In the substrate processing apparatus according to the present invention, the ozone-containing fluid ejection port and the ozone-decomposable fluid ejection port are arranged substantially uniformly over the entire surface of the first opposing surface. It is preferable that the high-temperature fluid ejection port is disposed substantially uniformly over the entire surface of the second facing surface.
[0029]
With this configuration, uniform processing can be realized over the entire surface of the substrate to be processed.
[0030]
In the substrate processing apparatus according to the present invention, it is preferable that the substrate processing apparatus further includes an ultraviolet light irradiating unit configured to irradiate the first processing fluid ejected toward the processing target surface of the processing target substrate with ultraviolet light. .
[0031]
With this configuration, the removal efficiency of the organic resist is further improved.
[0032]
A substrate processing method according to the present invention is a substrate processing method for removing an organic thin film formed on a surface to be processed of a substrate to be processed, wherein the substrate is processed in one direction by supporting an end surface of the substrate to be processed. While transporting the substrate, the first processing fluid for decomposing and removing the organic thin film is ejected from the first nozzle body toward the processing surface of the processing substrate, and the second processing fluid is ejected from the second nozzle body toward the back surface of the processing substrate. Two processing fluids are ejected, and the substrate to be processed is processed using the first and second processing fluids in a non-contact manner with respect to the first and second nozzle bodies.
[0033]
By employing such a processing method, it is possible to remove the organic resist in a short time without processing unevenness.
[0034]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0035]
(Embodiment 1)
FIG. 1 is a schematic diagram illustrating a configuration of a substrate processing apparatus according to Embodiment 1 of the present invention. FIG. 2 is a partially cutaway perspective view of a substrate processing unit which is a main part of the substrate processing apparatus shown in FIG.
[0036]
(Substrate processing equipment)
First, a general configuration of the substrate processing apparatus according to the present embodiment will be described with reference to FIG.
[0037]
As shown in FIG. 1, the substrate processing apparatus 1 according to the present embodiment includes a substrate processing unit located inside a chamber 300 and peripheral devices arranged outside the chamber 300. The substrate processing unit located in the chamber 300 mainly includes a first nozzle body 10, a second nozzle body 20, a transport roller 30, and a gas injection unit 113. The peripheral devices arranged outside the chamber 300 mainly include an ozone-based fluid generation device 40, an ozonolysis fluid generation device 50, a low-pressure mercury lamp 60, a waste liquid treatment device 70, a high-temperature steam generation device 80, There are a pure water generation device 90, a waste liquid treatment device 100, a gas supply device 110, and a flow controller 120.
[0038]
Hereinafter, a specific structure and configuration of the substrate processing apparatus according to the present embodiment will be described separately for a substrate processing unit and a peripheral device.
[0039]
(Structure of substrate processing unit)
First, with reference to FIG. 2, a structure of a substrate processing unit which is a main part of the substrate processing apparatus according to the present embodiment will be described.
[0040]
As shown in FIG. 2, the substrate processing apparatus 1 according to the present embodiment includes a first nozzle body 10 having a first facing surface 11 and a second nozzle body 20 having a second facing surface 21. The first nozzle body 10 and the second nozzle body 20 are spaced apart from each other, and a gap is formed between them. At the end of the gap located between the first nozzle body 10 and the second nozzle body 20, a plurality of transport rollers 30 as transport means for transporting the substrate are arranged. The transport roller 30 transports the substrate to be processed 200 in the direction of arrow A in the figure by rotating in the direction of arrow B while supporting the end surface of the substrate to be processed 200.
[0041]
The processing target substrate 200 is transported in a state where the processing target surface 201 faces the first facing surface 11 side of the first nozzle body 10. Therefore, the first opposing surface 11 of the first nozzle body 10 faces the surface 201 to be processed of the substrate 200 to be processed, and the second opposing surface 21 of the second nozzle body 20 corresponds to the surface of the substrate 200 to be processed. It will face back 202.
[0042]
A plurality of first ejection ports 12 and first suction ports 13 are provided on the first facing surface 11 of the first nozzle body 10. The first ejection port 12 is an ejection port that ejects the first processing fluid toward the processing surface 201 of the processing target substrate 200. Further, the first suction port 13 is a suction port for sucking the first processing fluid jetted toward the processing surface 201 of the processing target substrate 200. The first processing fluid ejected from the first ejection port 12 and collected from the first suction port 13 will be described later.
[0043]
The first jet port 12 is connected to pipes 44 and 54 (see FIG. 1) described later via a flow path (not shown) formed inside the first nozzle body 10. In addition, the first suction port 13 is connected to a pipe 74 (see FIG. 1) described later via a flow path (not shown) formed inside the first nozzle body 10.
[0044]
On the other hand, a plurality of second ejection ports 22 and second suction ports 23 are provided on the second facing surface 21 of the second nozzle body 20. The second ejection port 22 is an ejection port that ejects the second processing fluid toward the back surface 202 of the substrate 200 to be processed. Further, the second suction port 23 is a suction port for sucking the second processing fluid ejected toward the back surface 202 of the substrate 200 to be processed. The second processing fluid ejected from the second ejection port 22 and collected from the second suction port 23 will be described later.
[0045]
The second ejection port 22 is connected to pipes 84 and 94 (see FIG. 1) described later via a flow path (not shown) formed inside the second nozzle body 20. Further, the second suction port 23 is connected to a pipe 104 (see FIG. 1) described later via a flow path (not shown) formed inside the second nozzle body 20.
[0046]
(Configuration of peripheral devices)
Next, the configuration of peripheral devices of the substrate processing apparatus according to the present embodiment will be described with reference to FIG.
[0047]
(A. Ozone fluid supply means)
As shown in FIG. 1, the first nozzle body 10 is connected to an ozone fluid generating device 40 via a pipe 44. The ozone fluid generating device 40 is a device that generates ozone water or ozone gas that is an ozone fluid. In a pipe 44 connecting the first nozzle body 10 and the ozone fluid generation device 40, a pump 41 for sending out the ozone fluid generated by the ozone fluid generation device 40 and a flow rate of the ozone fluid are adjusted. And a valve 42 to be mounted. In the substrate processing apparatus 1 of the present embodiment, the ozone-based fluid is supplied to the substrate by the ozone-based fluid generation device 40, the pump 41, the pipe 44, and the flow path formed inside the first nozzle body 10. An ozone-fluid supply unit for supplying the processing unit is configured.
[0048]
(B. Ozone-decomposable fluid supply means)
Further, an ozone-decomposable fluid generator 50 is connected to the first nozzle body 10 via a pipe 54. The ozonolysis fluid generation device 50 is a device that generates an ozonolysis fluid that promotes the decomposition of ozone. A pipe 51 for connecting the first nozzle body 10 and the ozone-decomposable fluid generator 50 has a pump 51 for sending out the ozone-decomposable fluid generated by the ozone-decomposable fluid generator 50, And a valve 52 that adjusts the flow rate. In the substrate processing apparatus 1 according to the present embodiment, the ozonolysis fluid generation device 50, the pump 51, the pipe 54, and the flow path formed inside the first nozzle body 10 form the ozonolysis fluid. Means for supplying ozone-decomposable fluid to the substrate processing unit.
[0049]
(C. First processing fluid supply means and first processing fluid)
In the substrate processing apparatus 1 according to the present embodiment, the first processing fluid that ejects the first processing fluid to the processing surface 201 of the processing target substrate 200 by the above-described ozone fluid supply unit and ozone decomposable fluid supply unit. Supply means will be configured. The first processing fluid is a processing fluid that is jetted from the first jet port 12 provided on the first facing surface 11 of the first nozzle body 10 toward the target surface 201 of the target substrate 200, and is an organic fluid. This is a processing fluid including an ozone-based fluid for decomposing and removing the organic resist 204 as a thin film and an ozone-decomposable fluid.
[0050]
(D. Ultraviolet light irradiation means)
A low-pressure mercury lamp 60 is connected to the first nozzle body 10 via an optical system. The low-pressure mercury lamp 60 is a device that emits ultraviolet light that promotes decomposition of ozone, and is connected to the first nozzle body 10 by, for example, an optical fiber 61. An optical path (not shown) is formed inside the first nozzle body 10, and when the ultraviolet light propagates in the optical path, the ultraviolet light emitted from the low-pressure mercury lamp 60 is irradiated with the ultraviolet light irradiation port 16 (FIG. 3). ) To the substrate processing unit. In the substrate processing apparatus 1 according to the present embodiment, the low-pressure mercury lamp 60, the optical fiber 61, and the optical path formed inside the first nozzle body 10 face the processing surface 201 of the processing target substrate 200. Ultraviolet light irradiating means for irradiating the jetted first processing fluid with ultraviolet light is configured.
[0051]
(E. First treatment fluid recovery means)
Further, a waste liquid treatment device 70 is connected to the first nozzle body 10 via a pipe 74. The waste liquid processing device 70 is a device that processes the processed first processing fluid that is a waste liquid. A pump 74 for sending out waste liquid and a valve 72 for adjusting the flow rate of this waste liquid are attached to a pipe 74 connecting the first nozzle body 10 and the waste liquid treatment device 70. In the substrate processing apparatus 1 of the present embodiment, the first processing fluid is processed by the waste liquid processing apparatus 70, the pump 71, the pipe 74, and the flow path formed inside the first nozzle body 10. First processing fluid recovery means for sucking from the section is configured.
[0052]
(F. Hot fluid supply means)
On the other hand, a high-temperature steam generator 80 is connected to the second nozzle body 20 via a pipe 84. The high-temperature steam generation device 80 is a device that generates high-temperature steam by heating pure water. A pump 84 for sending out high-temperature steam and a valve 82 for adjusting the flow rate of the steam are attached to a pipe 84 connecting the second nozzle body 20 and the high-temperature steam generator 80. In the substrate processing apparatus 1 according to the present embodiment, the temperature of the first processing fluid is controlled by the high-temperature steam generator 80, the pump 81, the pipe 84, and the flow path formed inside the second nozzle body 20. High-temperature fluid supply means for supplying a higher-temperature fluid to the substrate processing unit is configured.
[0053]
(G. Ultrasonic application water supply means)
Further, a pure water generator 90 is connected to the second nozzle body 20 via a pipe 94. The pure water generator 90 is a device for generating pure water. A pump 91 for sending pure water and a valve 92 for adjusting the flow rate of the pure water are attached to a pipe 94 connecting the second nozzle body 20 and the pure water generator 90. An ultrasonic vibrator 93 (see FIG. 5) is arranged inside the second nozzle body 20, and the ultrasonic vibrator 93 applies ultrasonic waves to pure water flowing into the second nozzle body 20 from the pipe 94. Is applied. In the substrate processing apparatus 1 according to the present embodiment, the pure water generator 90, the pump 91, the pipe 94, the ultrasonic vibrator 93, and the flow path formed inside the second nozzle body 20 cause the ultrasonic wave applied water to flow. Means for supplying water to the substrate processing unit for supplying ultrasonic waves.
[0054]
(H. Second treatment fluid recovery means)
Further, a waste liquid treatment apparatus 100 is connected to the second nozzle body 20 via a pipe 104. The waste liquid processing apparatus 100 is an apparatus that processes a processed second processing fluid that is a waste liquid. A pump 104 for sending out a waste liquid and a valve 102 for adjusting a flow rate of the waste liquid are attached to a pipe 104 connecting the second nozzle body 20 and the waste liquid processing apparatus 100. In the substrate processing apparatus 1 according to the present embodiment, the second processing fluid is processed by the waste liquid processing apparatus 100, the pump 101, the pipe 104, and the flow path formed inside the second nozzle body 20. Second processing fluid recovery means for sucking from the section is configured.
[0055]
(I. Second Processing Fluid Supply Means and Second Processing Fluid)
In the substrate processing apparatus 1 according to the present embodiment, the second processing fluid supply unit that ejects the second processing fluid to the back surface 202 of the substrate 200 to be processed is formed by the high-temperature fluid supply unit and the ultrasonic application water supply unit. Will be composed. The second processing fluid is a processing fluid that is jetted from the second jet port 22 provided on the second facing surface 21 of the second nozzle body 20 toward the back surface 202 of the substrate 200 to be processed. This is a processing fluid containing a high-temperature fluid and water applied with ultrasonic waves, which are added to promote the decomposition action of the organic resist 204 by the fluid.
[0056]
(J. Gas injection means)
A gas supply unit 110 is connected via a pipe 114 to a gas injection unit 113 disposed at an end of a gap located between the first nozzle body 10 and the second nozzle body 20. The gas supply device 110 is a device for supplying a high-pressure gas. A pump 111 for delivering high-pressure gas and a valve 112 for adjusting the flow rate of the high-pressure gas are attached to a pipe 114 connecting the gas injection unit 113 and the gas supply device 110. In the substrate processing apparatus 1 according to the present embodiment, the position between the first nozzle body 10 and the second nozzle body 20 is determined by the gas supply device 110, the pump 111, the pipe 114, and the gas injection unit 113. Gas injecting means for injecting gas to the end of the gap between the processing target substrate 200 in the direction intersecting the transport direction is configured.
[0057]
(K. Ejection pressure and suction pressure adjusting means)
The operation of each of the valves 42, 52, 72, 82, 92 and 102 is controlled by the flow controller 120. The flow controller 120 adjusts the flow rates of the various fluids described above by adjusting the opening and closing of all these valves. In the substrate processing apparatus 1 according to the present embodiment, the ejection pressure and suction pressure of the first processing fluid and the second processing fluid are controlled by the flow controller 120 and the valves 42, 52, 72, 82, 92, and 102. A jet pressure and supply pressure adjusting means to be adjusted is configured.
[0058]
Further, the flow controller 120 in the present embodiment is configured to control the operation of the valve 112 provided in the pipe 114 connecting the gas supply device 110 and the gas injection unit 113 together. The flow rate controller 120 adjusts the flow rate of the high-pressure gas injected to the end of the substrate processing unit by adjusting the opening and closing of the valve 112.
[0059]
(Opening layout of first and second facing surfaces)
Next, an example of a layout of various openings provided in the first nozzle body and the second nozzle body of the substrate processing apparatus having the above configuration will be described. FIG. 3 is an enlarged plan view illustrating one unit of a repeating pattern of various openings provided on the first facing surface of the first nozzle body of the substrate processing apparatus according to the present embodiment. FIG. 4 is a schematic plan view of a first facing surface of a first nozzle body showing a layout example of the repeating pattern shown in FIG.
[0060]
As described above, a plurality of openings are arranged on the first facing surface 11 of the first nozzle body 10. As shown in FIG. 3, the plurality of openings include an ozone-containing fluid ejection port 14 and an ozonolysis fluid ejection port 15 as the first ejection ports 12, an ultraviolet light irradiation port 16, and a first suction port 13. included. In the substrate processing apparatus 1 according to the present embodiment, a pattern in which the plurality of openings are linearly arranged is defined as one unit of a repetitive pattern, and the repetitive pattern is regularly aligned over the entire surface of the first facing surface 11. Are placed.
[0061]
FIG. 4A shows a layout pattern in which the repeating patterns 18A shown in FIG. 3 are arranged in a matrix, and FIG. 4A shows a layout pattern in which the layout patterns arranged in a matrix are shifted by a predetermined distance in the column direction. 5B and the layout pattern shown in FIG. 4C. Regardless of which layout pattern is used, the first opposing surface 11 of the first nozzle body 10 has an ozone-soluble fluid ejection port 14, an ozonolysis fluid ejection port 15, an ultraviolet light irradiation port 16, The one suction port 13 is arranged uniformly over the entire surface.
[0062]
Although not shown, the high-temperature fluid ejection port 24 and the ultrasonic application water ejection port 25 serving as the second ejection port and the second suction port are also provided on the second opposed surface 21 of the second nozzle body 20. The openings 23 are arranged in a matrix over the entire surface of the second opposing surface 21, as in the case of the above-described first opposing surface, with the pattern arranged linearly as one unit of a repeated pattern. Therefore, also on the second facing surface 21, the high-temperature fluid ejection port 24, the ultrasonic application water ejection port 25, and the second suction port 23 are uniformly arranged over the entire surface.
[0063]
(Operation of substrate processing equipment, etc.)
Next, the operation of the substrate processing apparatus when the substrate is actually processed using the substrate processing apparatus having the above-described configuration will be described, and how the organic resist is decomposed and removed from the substrate to be processed by the present substrate processing apparatus will be described. Will be explained. FIG. 5 is a schematic cross-sectional view including the substrate processing unit of the substrate processing apparatus according to the present embodiment, and is a cross-sectional view when the substrate processing unit is cut along the line VV shown in FIG. FIG. 6 is a schematic cross-sectional view including an end of a substrate processing unit of the substrate processing apparatus according to the present embodiment.
[0064]
As shown in FIGS. 5 and 6, the first nozzle body 10 and the second nozzle body 20 are arranged to face each other with a minute gap therebetween, and the substrate 200 moves in one direction in this gap. It is configured to During the passage through the gap, the processing surface 201 of the processing target substrate 200 is always exposed to the first processing fluid 401, and the back surface 202 of the processing target substrate 200 is always exposed to the second processing fluid 402. It has been done.
[0065]
Examples of the substrate 200 to be processed include a semiconductor wafer and a mother substrate for a liquid crystal panel. For example, when a mother substrate of a liquid crystal panel is adopted as the substrate 200 to be processed, the thickness of the mother substrate is approximately 0.1 mm to 1 mm, so that the distance between the first nozzle body 10 and the second nozzle body 20 is reduced. The size of the gap formed is set to approximately 1 mm to 5 mm. In the substrate processing apparatus 1 according to the present embodiment, processing can be performed efficiently regardless of the size of the processing target surface 201 of the processing target substrate 200, but processing is difficult particularly in a conventional substrate processing apparatus. In addition, it is possible to effectively treat a large substrate having a side exceeding 1 m.
[0066]
As described above, on the first facing surface 11 of the first nozzle body 10, the ozone-containing fluid ejection port 14, the ozonolysis fluid ejection port 15, and the first suction port 13 are uniformly arranged over the entire surface. Further, on the second facing surface 21 of the second nozzle body 20, a high-temperature fluid jet port 24, an ultrasonic application water jet port 25, and a second suction port 23 are uniformly arranged over the entire surface. The ejection pressure or suction pressure of various fluids ejected or sucked through these ejection ports and suction ports is adjusted by the ejection pressure and suction pressure adjusting means described above. For this reason, the processing target substrate 200 is positioned in a state of floating in the gap without contacting the first nozzle body 10 and the second nozzle body 20. Then, the sheet is conveyed in one direction at a predetermined speed by receiving the rotational propulsion force of the conveying roller 30. In this transfer process, the organic resist 204 formed on the processing surface 201 of the processing target substrate 200 is decomposed and removed by the first processing fluid 401 jetted from the first jet port 12.
[0067]
An ozone-based fluid is supplied from the ozone-based fluid ejection port 14 provided on the first facing surface 11 of the first nozzle body 10 toward the surface 201 to be processed of the substrate 200 to be processed. As the ozone-based fluid, high-concentration ozone gas, high-concentration ozone water, or a mixture thereof is used. Ozone contained in the ozone fluid and radical active species represented by hydroxy radicals generated by the decomposition of ozone react with the organic resist 204 formed on the processing surface 201 of the processing substrate 200, Organic components contained in the organic resist 204 are completely decomposed into water and carbon dioxide.
[0068]
The high concentration ozone gas described above has an ozone concentration of 150 g / m ³ The above ozone gas-oxygen gas mixed gas or the ozone concentration is 150 g / m ³ The above ozone gas-air mixed gas is used. When ozone water is used, pure water containing 30 ppm or more of ozone is used.
[0069]
By jetting these ozone-based fluids at high pressure toward the processing surface 201 of the processing substrate 200, the ozone concentration in the vicinity of the processing surface 201 can be maintained at a high concentration. As a result, the decomposition process of the organic resist 204 can be accelerated. Note that the ejection pressure of the ozone fluid ejected from the ozone fluid ejection port 14 is 0.1 kg / cm higher than the pressure in the substrate processing unit. ² ~ 5kg / cm ² It is effective to set a high level.
[0070]
The ozone-decomposable fluid is supplied from the ozone-decomposable fluid ejection port 15 provided on the first facing surface 11 of the first nozzle body 10 in accordance with the supply of the ozone-decomposed fluid to the target substrate 200. It is ejected toward the surface 201 to be processed. This ozone-decomposable fluid functions as a promoter for promoting the decomposition reaction of ozone contained in the ozone-based fluid, and the addition of this promoter effectively generates radical active species represented by hydroxy radicals. Will be done. Since these radical active species are more reactive than ozone, they also decompose saturated hydrocarbons that cannot be decomposed by ozone alone. Therefore, it is possible to completely decompose the organic resist into carbon dioxide and water. Therefore, the decomposition of the organic resist is promoted by ejecting the pressurized ozone-decomposing fluid together with the ozone-based fluid, and the organic resist can be decomposed more efficiently.
[0071]
Typically, ammonia water is used as the ozone-decomposable fluid. It is also possible to use an aqueous solution containing a strong alkali hydroxide such as an organic ammonium salt, a lithium salt, a beryllium salt, a sodium salt, a potassium salt, a magnesium salt, and a calcium salt. When these aqueous solutions are used as the ozone-decomposable fluid, the ozone-decomposable fluid is pressurized against the processing surface 201 of the target substrate 200 by a simple configuration such as providing a facility such as a pump. Can be sprayed.
[0072]
However, in order to effectively promote the decomposition reaction of ozone, a large amount of ozone-decomposable fluid is required with respect to the amount of ozone contained in the ozone-based fluid. Therefore, it is preferable to use a dissolved gas instead of an aqueous solution as the ozonolysis fluid. When a dissolved gas is used, a decrease in the ozone concentration in the first processing fluid 401 can be effectively prevented as compared with the case where an aqueous solution is used. For this reason, it becomes possible to promote the decomposition of ozone more effectively. In this case, ammonia gas is typically used. Further, it is also possible to use a gas such as a mist or a vapor containing a strong alkali hydroxide such as an organic ammonium salt, a lithium salt, a beryllium salt, a sodium salt, a potassium salt, a magnesium salt, and a calcium salt.
[0073]
The ejection pressure of the ozonolysis fluid is 0.15 kg / cm higher than the pressure in the substrate processing section. ² ~ 5kg / cm ² It is preferable to set it to a high level. Further, more preferably, the pressure is set to be substantially the same as the ejection pressure of the ozone-soluble fluid, or is 0.01 kg / cm higher than the ejection pressure of the ozone-decomposable fluid. ² ~ 1kg / cm ² Set about high. As a result, the ozone-based fluid is prevented from flowing backward from the ozonolysis-fluid ejection port 15.
[0074]
As described above, the ozone fluid and the ozone decomposable fluid are separately ejected from the ozone fluid outlet 14 and the ozone decomposable fluid outlet 15 provided on the first facing surface 11. For this reason, the ozone fluid and the ozonolysis fluid are mixed only in the vicinity of the processing surface 201 of the processing substrate 200, and the concentration of active species typified by hydroxy radicals on the surface of the processing surface 201 is always constant. It will be kept high.
[0075]
Ultraviolet light emitted from the low-pressure mercury lamp 60 is emitted toward the first processing fluid 401 from an ultraviolet light irradiation port 16 provided in the first nozzle body 10. Accordingly, the decomposition of ozone located near the processing surface 201 of the processing target substrate 200 is promoted, and radical active species represented by hydroxy radicals are effectively generated. As a result, the removal efficiency of the organic resist 204 is improved.
[0076]
Since this reaction mechanism is generated by photoexcitation of ozone, it is necessary to irradiate ultraviolet light including a wavelength having high light absorption efficiency of ozone. As the ultraviolet light having a wavelength having a high light absorption rate of ozone, for example, an ultraviolet light having a wavelength of 254 nm is known. Therefore, a semiconductor laser, a light emitting diode, an excimer UV lamp, a halogen lamp, or the like can be used as a light source that emits ultraviolet light in addition to the low-pressure mercury lamp. Further, in the present embodiment, the configuration is such that ultraviolet light is guided from a light source provided outside by the optical fiber 61 or a waveguide or a light guide plate as an optical path provided inside the first nozzle body 10. However, a light source may be embedded in the first nozzle body 10 itself.
[0077]
From the first suction port 13 provided in the first facing surface 11 of the first nozzle body 10, the first processing fluid 401 staying near the processing surface 201 of the processing target substrate 200 is sucked. As a result, the first processing fluid is promptly replaced in the vicinity of the processing surface 201 of the processing substrate 200, and a high concentration of radical active species is always supplied to the processing surface 201. In addition, since the first processing fluid 401 can flow at a high speed in the minute gap between the first facing surface 11 and the processing target surface 201, the flow of the first processing fluid 401 is changed to a turbulent state. Can be maintained. By maintaining the flow of the first processing fluid 401 on the processing target surface 201 in a turbulent state, the organic resist 204 can be efficiently removed and removed.
[0078]
High-temperature steam, which is a high-temperature fluid, is ejected from the high-temperature fluid ejection port 24 provided on the second facing surface 21 of the second nozzle body 20 toward the back surface 202 of the substrate 200 to be processed. The decomposition reaction of the organic resist by the radical active species depends on the reaction temperature, and the higher the temperature, the higher the reaction rate. However, the higher the temperature of the ozone-based fluid, the more the self-decomposition of ozone is promoted. Therefore, preheating the ozone-based fluid leads to a reduction in processing efficiency. For this reason, in the substrate processing apparatus 1 according to the present embodiment, the substrate to be processed 200 is heated to a predetermined temperature by supplying high-temperature steam to the back surface 202 of the substrate to be processed 200, and Only the first processing fluid 401 located near the processing surface 201 is effectively heated to promote the decomposition reaction of the organic resist.
[0079]
The temperature of the high-temperature steam is preferably set to about 50 ° C to 150 ° C. In particular, when high-temperature steam having a temperature exceeding 100 ° C. is used, the high-temperature steam condenses on the back surface 202 of the substrate 200, and the substrate 200 can be rapidly and uniformly heated to a high temperature of about 100 ° C. by the latent heat of condensation. Therefore, the processing efficiency is dramatically improved. The ejection pressure of the high-temperature steam is 0.1 kg / cm higher than the pressure in the substrate processing section. ² ~ 5kg / cm ² It is effective to set a high level.
[0080]
In addition, ultrasonic application water is jetted from an ultrasonic application water jet port 25 provided on the second facing surface 21 of the second nozzle body 20. An ultrasonic vibrator 93 is arranged near the ultrasonic application water jet port 25. The ultrasonic vibrator 93 applies ultrasonic waves having a frequency of about 0.1 MHz to 10 MHz to pure water jetted toward the back surface 202 of the substrate 200 to be processed. This makes it possible to effectively stir the first processing fluid 401 located near the processing surface 201 of the processing target substrate 200, thereby preventing a decrease in the concentration of radical active species on the surface of the organic resist 204, The decomposition of the organic resist is promoted.
[0081]
In addition, the temperature of the ultrasonically applied water is preferably set to about 50 ° C to 100 ° C. Thus, the temperature of the substrate 200 to be processed heated by the high-temperature steam is prevented from lowering. The jet pressure of the ultrasonically applied water is 0.15 kg / cm higher than the pressure in the substrate processing section. ² ~ 5kg / cm ² It is preferable to set it to a high level. More preferably, the pressure is set to the same level as the high-pressure steam ejection pressure, or 0.01 kg / cm ² ~ 1kg / cm ² Set about high. This prevents the high-temperature steam from flowing backward from the ultrasonic application water jet port 25.
[0082]
As described above, high-temperature steam and ultrasonic-applied water are jetted toward the back surface 202 of the substrate 200 from the high-temperature fluid jet port 24 and the ultrasonic-applied water jet port 25 provided on the second facing surface 21. With such a configuration, the decomposition of ozone is promoted, and the removal efficiency of the organic resist is greatly improved.
[0083]
From the second suction port 23 provided in the second facing surface 21 of the second nozzle body 20, the second processing fluid 402 staying near the back surface 202 of the substrate 200 to be processed is sucked. As a result, the second processing fluid 402 is quickly replaced in the vicinity of the back surface 202 of the substrate 200 to be processed, the temperature of the substrate 200 to be maintained is kept constant, and the second processing fluid 402 The stirring effect of the one processing fluid 401 is always kept high.
[0084]
In the substrate processing apparatus 1 according to the present embodiment, since the processing target substrate 200 needs to be transported in a non-contact manner with the first facing surface 11 and the second facing surface 21, the inside of the gap on the first facing surface 11 side is required. And the pressure in the space on the second facing surface 21 side must be balanced. The maintenance of this pressure balance is realized by adjusting the supply pressure and suction pressure of various processing fluids using the above-described supply pressure and suction pressure adjusting means.
[0085]
Further, as shown in FIG. 6, a gas injection unit 113 is disposed at an end of the substrate processing unit. High-pressure gas is injected from the gas injection unit 113 toward a gap located between the first opposing surface 11 and the second opposing surface 21. Thereby, the inside of the substrate processing unit is maintained in a semi-sealed state, and the processing is stabilized. Further, also in the vicinity of the end of the substrate 200 to be processed, the pressure in the gap on the first facing surface 11 side and the pressure in the gap on the second facing surface 21 side are maintained in balance, and It is possible to perform uniform processing over the entire surface to be processed 201 of the substrate 200.
[0086]
In addition, as the gas to be injected, a gas that does not affect the reaction between the radical active species and the organic resist, such as an inert gas such as nitrogen or argon, or air is used. The gas injection pressure is 0.1 kgcm higher than the pressure in the substrate processing section. ² ~ 5kg / cm ² It is preferable to set it to a high level.
[0087]
(effect)
As described above, by performing the organic resist removal processing using the substrate processing apparatus as in the present embodiment, the flat flow method can be applied to a large substrate typified by a mother substrate of a liquid crystal panel. Single-wafer processing can be applied. Thereby, a large amount of processing can be realized in a short time. Further, even when a large-sized substrate is used, there is no possibility that the substrate to be processed is damaged, and uniform processing can be realized over the entire surface of the substrate to be processed.
[0088]
(Another Example of Opening Layout of First and Second Opposing Surfaces)
7 to 13 are diagrams showing other layout examples of various openings formed in the first and second facing surfaces. In the above-described substrate processing apparatus 1, a case where a pattern in which various openings provided in the first and second facing surfaces 11 and 21 are linearly arranged is taken as an example of a repeated pattern has been described. Of course, other layout patterns can be employed. In the following, some other layout examples will be exemplified.
[0089]
(Other layout example 1)
FIG. 7 is an enlarged plan view showing one unit of a repeating pattern of various openings provided on the first facing surface of the first nozzle body of the substrate processing apparatus in another layout example 1. FIG. FIG. 9 is a schematic plan view of a first facing surface of a first nozzle body showing a layout example of the repeating pattern shown.
[0090]
As shown in FIG. 7, in the present layout example, an ozone-decomposable fluid ejection port 15, an ultraviolet light irradiation port 16, and a first suction port 13 are arranged so as to surround the ozone-based fluid ejection port 14, One unit of a rectangular repetition pattern is configured as a whole. FIG. 8A shows a layout pattern in which the repetitive patterns 18B shown in FIG. 7 are arranged in a matrix. FIG. 8A shows a layout pattern in which the layout patterns arranged in a matrix are shifted by a predetermined distance in the column direction. 8B and the layout pattern shown in FIG. 8C. Regardless of which layout pattern is used, the first opposing surface 11 of the first nozzle body 10 has an ozone-soluble fluid ejection port 14, an ozonolysis fluid ejection port 15, an ultraviolet light irradiation port 16, The one suction port 13 is arranged uniformly over the entire surface. As a modification of the present layout example, a repetitive pattern 18C as shown in FIG. 9 can be used.
[0091]
(Other layout example 2)
FIG. 10 is an enlarged plan view showing one unit of a repeating pattern of various openings provided on the first facing surface of the first nozzle body of the substrate processing apparatus according to another layout example 2. FIG. FIG. 9 is a schematic plan view of a first facing surface of a first nozzle body showing a layout example of the repeating pattern shown.
[0092]
As shown in FIG. 10, in the present layout example, an ozonolysis fluid ejection port 15, an ultraviolet light irradiation port 16, and a first suction port 13 are arranged so as to surround the ozone fluid ejection port 14. One unit of a circular repetition pattern is configured as a whole. FIG. 11A shows a layout pattern in which the repeating patterns 18D shown in FIG. 10 are arranged in a matrix. FIG. 11A shows a layout pattern in which the layout patterns arranged in a matrix are shifted by a predetermined distance in the column direction. This is the layout pattern shown in FIG. Regardless of which layout pattern is used, the first opposing surface 11 of the first nozzle body 10 has an ozone-soluble fluid ejection port 14, an ozonolysis fluid ejection port 15, an ultraviolet light irradiation port 16, The one suction port 13 is arranged uniformly over the entire surface.
[0093]
(Other layout example 3)
FIG. 12 is an enlarged plan view showing one unit of a repeating pattern of various openings provided on the first facing surface of the first nozzle body of the substrate processing apparatus according to another layout example 3. FIG. FIG. 9 is a schematic plan view of a first facing surface of a first nozzle body showing a layout example of the repeating pattern shown.
[0094]
As shown in FIG. 12, in the present layout example, an ozonolysis fluid ejection port 15, an ultraviolet light irradiation port 16, and a first suction port 13 are arranged so as to surround the ozone fluid ejection port 14, As a whole, one unit of a hexagonal repeating pattern is configured. FIG. 13 shows a layout pattern in which the repetitive patterns 18E shown in FIG. 12 are arranged in a honeycomb shape. Even when this layout pattern is used, the first opposing surface 11 of the first nozzle body 10 has an ozone-soluble fluid ejection port 14, an ozonolysis fluid ejection port 15, an ultraviolet light irradiation port 16, The suction port 13 is uniformly disposed over the entire surface.
[0095]
In any of the layout examples described above, the ozone-decomposable fluid is added to the ozone-based fluid discharged from the ozone-based fluid ejection port 14 and is drawn from the first suction port 13 after being irradiated with ultraviolet light. The arrangement of various openings is devised. By adopting the opening layout adopting such rules, the processing efficiency can be greatly increased.
[0096]
Although not shown, the high-temperature fluid ejection port 24, the ultrasonic application water ejection port 25, and the second suction port 23 are also formed on the second facing surface 21 of the second nozzle body 20. The layout can be performed by the same layout method as the other layout examples 1 to 3 described above. As a result, also on the second facing surface 21, the high-temperature fluid ejection port 24, the ultrasonic application water ejection port 25, and the second suction port 23 are uniformly arranged over the entire surface.
[0097]
(Embodiment 2)
FIG. 14 is a partially cutaway perspective view of a substrate processing unit which is a main part of the substrate processing apparatus according to Embodiment 2 of the present invention. The same parts as those in the first embodiment are denoted by the same reference numerals in the drawings, and description thereof will not be repeated here.
[0098]
The substrate processing apparatus shown in FIG. 14 has basically the same configuration as that of the substrate processing apparatus according to the first embodiment, except that the substrate processing apparatus 200 is conveyed in a substantially vertical state. The difference from the substrate processing apparatus in the first embodiment is that the configuration of the unit is changed. As described above, in order for the substrate to be processed 200 to be transported in an upright posture, the first opposing surface 11 of the first nozzle body 10 and the second opposing surface 21 of the second nozzle body 20 are required. This is realized by arranging the first nozzle body 10 and the second nozzle body 20 such that the first and second nozzle bodies are in an upright posture.
[0099]
With this configuration, the weight of the substrate to be processed 200 is entirely applied to the transport roller 30 located below. Therefore, the ejection pressure of the first processing fluid is lower than that of the substrate processing apparatus of the first embodiment. In addition, the control of the suction pressure and the ejection pressure and suction pressure of the second processing fluid can be more easily performed. In addition, the transfer roller 30 may be installed only on the lower side of the processing target substrate 200 among the ends of the gap in the direction intersecting the transfer direction of the processing target substrate 200 (the direction of arrow A in the figure), and the apparatus configuration is simplified. Will be able to Further, since the footprint of the substrate processing apparatus itself is significantly reduced, the degree of freedom of the installation layout in the factory is increased.
[0100]
(Embodiment 3)
FIG. 15 is a schematic diagram illustrating a configuration example of a processing line of a substrate to be processed including the substrate processing apparatus according to the first embodiment. Hereinafter, a configuration example of a processing line for a substrate to be processed will be described with reference to this drawing.
[0101]
First, the substrate to be processed 200 is transported to the substrate loader unit 1001 by a robot such as a fork or the like from the previous process. Here, the substrate to be processed 200 is sucked in a non-contact manner by a suction port provided in the substrate loader unit 1001. Then, the processing target substrate 200 sucked in a non-contact manner is transported by the transport roller 30 in the direction of arrow A in the figure, and reaches the pretreatment cleaning unit 1002.
[0102]
In the pretreatment cleaning unit 1002, pure water is supplied to the processing surface 201 and the back surface 202 of the processing target substrate 200 from the nozzles arranged above and below, and large dust, burrs of the organic resist 204, and the like are washed and removed. The substrate 200 processed by the preprocessing cleaning unit 1002 is sent out to the resist stripping unit 1003 by the transport roller 30.
[0103]
In the resist stripping section 1003, the organic resist 204 formed on the substrate 200 to be processed is stripped and removed by the substrate processing apparatus 1 described above. This peeling treatment is as described above. The substrate to be processed 200 processed by the resist stripping unit 1003 is sent out to the rinse cleaning unit 1004 by the transport roller 30.
[0104]
In the rinse cleaning unit 1004, the processing fluid remaining on the processing surface of the processing target substrate 200 is washed away with pure water. The substrate 200 processed by the rinsing cleaning unit 1004 is sent out to the substrate drying unit 1005 by the transport roller 30.
[0105]
In the substrate drying unit 1005, moisture attached to the surface of the substrate to be processed 200 is removed by a drying method such as an air knife or a microwave. The substrate 200 subjected to the drying process is finally transported by the transport roller 30 to the substrate unloader unit 1006, and sent out to the next process line by a robot such as a fork or the like by flat flow transport.
[0106]
As described above, by adopting the substrate processing apparatus as in the above-described first embodiment, it becomes possible to construct a flat-line processing line, so that processing efficiency is dramatically improved. .
[0107]
In the above-described embodiment, the case where the high-temperature fluid is ejected from the second ejection port provided in the second nozzle body has been described as an example, but the first ejection port of the first nozzle body has been described. It is good also as composition which ejects a high temperature fluid from. Usually, since steam is used as the high-temperature fluid, even when the high-temperature fluid is ejected toward the surface of the substrate to be processed, the active species concentration in the vicinity of the surface of the substrate to be processed decreases. This is because there is little possibility that the influence on the processing efficiency is small. However, a liquid is generally used as the ultrasonically applied water, and when the ultrasonically applied water is discharged toward the surface to be processed of the substrate to be processed, there is a concern that the active species concentration may be reduced. Therefore, it is not considered to be a very preferable configuration.
[0108]
Further, in the above-described embodiment, the case where various openings provided in the first nozzle body and the second nozzle body are regularly arranged has been described, but the present invention is particularly limited to these layouts. Instead, the layout of the various openings can be freely designed.
[0109]
Furthermore, in the above-described embodiment, the case where the processing target substrate has a configuration in which the processing is performed in a state where the processing surface is horizontal or vertical is described, but the present invention is not particularly limited to this. is not. Naturally, it is also possible to configure so that the processing target surface of the processing target substrate is processed in an inclined state.
[0110]
As described above, each of the embodiments disclosed above is an example in all respects, and is not restrictive. The technical scope of the present invention is defined by the claims, and includes all modifications within the meaning and scope equivalent to the claims.
[0111]
【The invention's effect】
According to the present invention, it is possible to provide a substrate processing apparatus capable of uniformly removing an organic resist formed on a substrate to be processed in a short time. Further, it is possible to provide a substrate processing apparatus suitable for processing a large-sized substrate such as a mother substrate of a liquid crystal panel.
[Brief description of the drawings]
FIG. 1 is a schematic diagram illustrating a configuration of a substrate processing apparatus according to Embodiment 1 of the present invention.
FIG. 2 is a partially cutaway perspective view of a substrate processing unit which is a main part of the substrate processing apparatus shown in FIG.
FIG. 3 is an enlarged plan view showing one unit of a repeating pattern of various openings provided on a first facing surface of the substrate processing apparatus shown in FIG.
FIG. 4 is a schematic plan view of a first opposing surface of a first nozzle body showing a layout example of a repeating pattern shown in FIG. 3;
FIG. 5 is a schematic sectional view including a substrate processing unit of the substrate processing apparatus shown in FIG.
FIG. 6 is a schematic sectional view including an end of a substrate processing unit of the substrate processing apparatus shown in FIG.
FIG. 7 is an enlarged plan view showing one unit of a repeating pattern of various openings in another layout example 1 based on the first embodiment of the present invention.
FIG. 8 is a schematic plan view of a first facing surface of a first nozzle body showing a layout example of the repeating pattern shown in FIG. 7;
FIG. 9 is an enlarged plan view showing still another example of one unit of a repeating pattern of various openings in another layout example 1 based on the first embodiment of the present invention.
FIG. 10 is an enlarged plan view showing one unit of a repeating pattern of various openings in another layout example 2 based on the first embodiment of the present invention.
11 is a schematic plan view of a first facing surface of a first nozzle body showing a layout example of the repeating pattern shown in FIG. 10;
FIG. 12 is an enlarged plan view showing one unit of a repeating pattern of various openings in another layout example 3 based on the first embodiment of the present invention.
FIG. 13 is a schematic plan view of a first facing surface of a first nozzle body showing a layout example of the repeating pattern shown in FIG. 12;
FIG. 14 is a partially cutaway perspective view of a substrate processing unit that is a main part of the substrate processing apparatus according to Embodiment 2 of the present invention.
FIG. 15 is a schematic diagram illustrating a configuration example of a processing line of a substrate to be processed according to a third embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus, 10 1st nozzle body, 11 1st opposing surface, 12 1st ejection port, 13 1st suction port, 14 ozone-soluble fluid ejection port, 15 ozone-decomposable fluid ejection port, 16 UV irradiation port, 18A １８18E layout pattern, 20 second nozzle body, 21 second facing surface, 22 second jet port, 23 second suction port, 24 high temperature steam jet port, 25 ultrasonic applied water jet port, 30 transport roller, 40 ozone Fluid generating device, 41, 51, 71, 81, 91, 101, 111 pump, 42, 52, 72, 82, 92, 102, 112 valve, 44, 54, 74, 84, 94, 104, 114 piping, 50 Ozone-decomposable fluid generator, 60 low-pressure mercury lamp, 61 optical fiber, 70 waste liquid treatment device, 80 high-temperature steam generator, 90 pure water generator, 93 ultrasonic oscillator, 100 waste liquid treatment device, Reference Signs List 10 gas supply device, 113 gas injection unit, 120 flow controller, 200 substrate to be processed, 201 surface to be processed, 202 back surface, 204 organic resist, 300 chamber, 401 first processing fluid, 402 second processing fluid, 1001 substrate loader unit , 1002 pretreatment cleaning section, 1003 resist stripping section, 1004 rinse cleaning section, 1005 substrate drying section, 1006 substrate unloader section.

Claims (8)

A substrate processing apparatus for removing an organic thin film formed on a surface to be processed of a substrate to be processed,
Transport means for transporting the substrate to be processed in one direction while supporting the end surface of the substrate to be processed,
A first nozzle body having a first facing surface that is located away from the processing surface of the processing substrate;
A second nozzle body having a second opposing surface located apart from the back surface of the substrate to be processed;
A first processing fluid supply unit configured to eject a first processing fluid that decomposes and removes the organic thin film toward the processing surface of the processing target substrate through a plurality of first discharge ports provided on the first facing surface; When,
First processing fluid recovery means for sucking the first processing fluid ejected toward the processing surface of the processing substrate through a plurality of first suction ports provided in the first facing surface;
A second processing fluid supply unit configured to eject a second processing fluid toward a back surface of the processing target substrate through a plurality of second ejection ports provided on the second facing surface;
A second processing fluid recovery unit configured to suction the second processing fluid ejected toward the back surface of the substrate to be processed through a plurality of second suction ports provided on the second facing surface. Substrate processing equipment. The ejection pressure of the first treatment fluid by the first treatment fluid supply means, the suction pressure of the first treatment fluid by the first treatment fluid recovery means, and the ejection pressure of the second treatment fluid by the second treatment fluid supply means 2. The substrate processing apparatus according to claim 1, further comprising an ejection pressure and suction pressure adjusting unit that adjusts a suction pressure of the second processing fluid by the second processing fluid recovery unit. 3. The apparatus according to claim 1, further comprising a gas injection unit configured to inject gas to an end of a gap located between the first nozzle body and the second nozzle body in a direction intersecting with a transport direction of the substrate to be processed. 3. The substrate processing apparatus according to 1 or 2. The first processing fluid supply unit includes an ozone-based fluid supply unit that supplies an ozone-based fluid, and an ozone-decomposable fluid supply unit that provides an ozone-decomposed fluid.
4. The device according to claim 1, wherein the first ejection port includes an ozone-based fluid ejection port that ejects the ozone-based fluid and an ozonolysis fluid ejection port that ejects the ozone-decomposed fluid. 5. Substrate processing equipment. The second processing fluid supply unit includes an ultrasonic application water supply unit that supplies ultrasonic application water, and a high temperature fluid supply unit that supplies a fluid higher than the temperature of the first processing fluid.
5. The substrate processing apparatus according to claim 4, wherein the second ejection port includes an ultrasonic application water ejection port that ejects the ultrasonic application water, and a high-temperature fluid ejection port that ejects the high-temperature fluid. The ozone fluid ejection port and the ozone decomposable fluid ejection port are disposed substantially uniformly over the entire surface of the first facing surface,
The substrate processing apparatus according to claim 5, wherein the ultrasonic application water jet and the high-temperature fluid jet are substantially uniformly arranged over the entire surface of the second facing surface. The substrate processing apparatus according to claim 4, further comprising an ultraviolet light irradiating unit configured to irradiate the first processing fluid ejected toward the processing surface of the processing substrate with ultraviolet light. . A substrate processing method for removing an organic thin film formed on a surface to be processed of a substrate to be processed,
A first step of transporting the substrate to be processed in one direction by supporting an end surface of the substrate to be processed and decomposing and removing the organic thin film from the first nozzle body toward the surface to be processed of the substrate to be processed; The processing fluid is ejected, and a second processing fluid is ejected from the second nozzle body toward the back surface of the substrate to be processed. The substrate is processed using the first and second processing fluids. And processing the second nozzle body in a non-contact manner.

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