TWI380356B - - Google Patents
Download PDFInfo
- Publication number
- TWI380356B TWI380356B TW094121933A TW94121933A TWI380356B TW I380356 B TWI380356 B TW I380356B TW 094121933 A TW094121933 A TW 094121933A TW 94121933 A TW94121933 A TW 94121933A TW I380356 B TWI380356 B TW I380356B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- processing chamber
- processing
- substrate
- loading
- Prior art date
Links
Classifications
-
- H10P72/3306—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- H10P72/0462—
-
- H10P72/0466—
-
- H10P72/3308—
-
- H10P50/242—
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004193569 | 2004-06-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200607013A TW200607013A (en) | 2006-02-16 |
| TWI380356B true TWI380356B (enExample) | 2012-12-21 |
Family
ID=35782687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094121933A TW200607013A (en) | 2004-06-30 | 2005-06-29 | Vacuum treatment device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7682481B2 (enExample) |
| JP (1) | JP4673308B2 (enExample) |
| KR (1) | KR100808820B1 (enExample) |
| CN (1) | CN100492599C (enExample) |
| DE (1) | DE112005001539B4 (enExample) |
| TW (1) | TW200607013A (enExample) |
| WO (1) | WO2006003880A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100841741B1 (ko) * | 2007-04-04 | 2008-06-27 | 주식회사 싸이맥스 | 진공처리장치 |
| EP4056740A1 (de) * | 2021-03-10 | 2022-09-14 | Siltronic AG | Verfahren zum herstellen von halbleiterscheiben mit epitaktischer schicht in einer kammer eines abscheidereaktors |
| CN114481098A (zh) * | 2022-01-17 | 2022-05-13 | 成都四威高科技产业园有限公司 | 一种具有防护功能的腔室pecvd设备传动装置 |
| DE102022129723A1 (de) | 2022-11-10 | 2024-05-16 | Aixtron Se | CVD-Reaktor mit herausnehmbarem Prozesskammergehäuse |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3735284A1 (de) * | 1987-10-17 | 1989-04-27 | Leybold Ag | Vorrichtung nach dem karussell-prinzip zum beschichten von substraten |
| JPH01257193A (ja) * | 1988-04-08 | 1989-10-13 | Sumitomo Electric Ind Ltd | 半導体気相成長装置 |
| JPH06267808A (ja) * | 1993-03-15 | 1994-09-22 | Hitachi Ltd | チャンバ接続用ガイド機構付きマルチチャンバ装置 |
| JP3453223B2 (ja) * | 1994-08-19 | 2003-10-06 | 東京エレクトロン株式会社 | 処理装置 |
| JP2000182967A (ja) * | 1998-12-15 | 2000-06-30 | Sony Corp | 気相成長方法および気相成長装置 |
| JP2000273631A (ja) * | 1999-03-24 | 2000-10-03 | Olympus Optical Co Ltd | スパッタリング装置 |
| JP2001035842A (ja) * | 1999-07-19 | 2001-02-09 | Sony Corp | Cvd装置及び半導体装置の製造方法 |
| JP4906999B2 (ja) * | 2000-07-12 | 2012-03-28 | 株式会社アルバック | 真空装置 |
| TWI290589B (en) * | 2000-10-02 | 2007-12-01 | Tokyo Electron Ltd | Vacuum processing device |
| JP4647122B2 (ja) * | 2001-03-19 | 2011-03-09 | 株式会社アルバック | 真空処理方法 |
| JP2003229417A (ja) * | 2001-11-28 | 2003-08-15 | Tokyo Electron Ltd | 真空処理装置及びその制御方法 |
-
2005
- 2005-06-28 WO PCT/JP2005/011808 patent/WO2006003880A1/ja not_active Ceased
- 2005-06-28 CN CNB2005800219785A patent/CN100492599C/zh not_active Expired - Lifetime
- 2005-06-28 KR KR1020067027765A patent/KR100808820B1/ko not_active Expired - Fee Related
- 2005-06-28 DE DE112005001539T patent/DE112005001539B4/de not_active Expired - Fee Related
- 2005-06-28 JP JP2006528695A patent/JP4673308B2/ja not_active Expired - Fee Related
- 2005-06-29 TW TW094121933A patent/TW200607013A/zh not_active IP Right Cessation
-
2006
- 2006-12-28 US US11/646,593 patent/US7682481B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2006003880A1 (ja) | 2008-04-17 |
| KR20070032968A (ko) | 2007-03-23 |
| CN100492599C (zh) | 2009-05-27 |
| CN1977363A (zh) | 2007-06-06 |
| WO2006003880A1 (ja) | 2006-01-12 |
| DE112005001539B4 (de) | 2013-04-25 |
| KR100808820B1 (ko) | 2008-03-03 |
| US7682481B2 (en) | 2010-03-23 |
| JP4673308B2 (ja) | 2011-04-20 |
| TW200607013A (en) | 2006-02-16 |
| US20070151669A1 (en) | 2007-07-05 |
| DE112005001539T5 (de) | 2007-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |