TWI380356B - - Google Patents

Download PDF

Info

Publication number
TWI380356B
TWI380356B TW094121933A TW94121933A TWI380356B TW I380356 B TWI380356 B TW I380356B TW 094121933 A TW094121933 A TW 094121933A TW 94121933 A TW94121933 A TW 94121933A TW I380356 B TWI380356 B TW I380356B
Authority
TW
Taiwan
Prior art keywords
chamber
processing chamber
processing
substrate
loading
Prior art date
Application number
TW094121933A
Other languages
English (en)
Chinese (zh)
Other versions
TW200607013A (en
Inventor
Seiichi Takahashi
Takehisa Miyaya
Soo Boo Lim
Masayuki Satou
Kengo Tsutsumi
Yohei Ono
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200607013A publication Critical patent/TW200607013A/zh
Application granted granted Critical
Publication of TWI380356B publication Critical patent/TWI380356B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
TW094121933A 2004-06-30 2005-06-29 Vacuum treatment device TW200607013A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004193569 2004-06-30

Publications (2)

Publication Number Publication Date
TW200607013A TW200607013A (en) 2006-02-16
TWI380356B true TWI380356B (enExample) 2012-12-21

Family

ID=35782687

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121933A TW200607013A (en) 2004-06-30 2005-06-29 Vacuum treatment device

Country Status (7)

Country Link
US (1) US7682481B2 (enExample)
JP (1) JP4673308B2 (enExample)
KR (1) KR100808820B1 (enExample)
CN (1) CN100492599C (enExample)
DE (1) DE112005001539B4 (enExample)
TW (1) TW200607013A (enExample)
WO (1) WO2006003880A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100841741B1 (ko) * 2007-04-04 2008-06-27 주식회사 싸이맥스 진공처리장치
EP4056740A1 (de) * 2021-03-10 2022-09-14 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit epitaktischer schicht in einer kammer eines abscheidereaktors
CN114481098A (zh) * 2022-01-17 2022-05-13 成都四威高科技产业园有限公司 一种具有防护功能的腔室pecvd设备传动装置
DE102022129723A1 (de) 2022-11-10 2024-05-16 Aixtron Se CVD-Reaktor mit herausnehmbarem Prozesskammergehäuse

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
JPH01257193A (ja) * 1988-04-08 1989-10-13 Sumitomo Electric Ind Ltd 半導体気相成長装置
JPH06267808A (ja) * 1993-03-15 1994-09-22 Hitachi Ltd チャンバ接続用ガイド機構付きマルチチャンバ装置
JP3453223B2 (ja) * 1994-08-19 2003-10-06 東京エレクトロン株式会社 処理装置
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2000273631A (ja) * 1999-03-24 2000-10-03 Olympus Optical Co Ltd スパッタリング装置
JP2001035842A (ja) * 1999-07-19 2001-02-09 Sony Corp Ｃｖｄ装置及び半導体装置の製造方法
JP4906999B2 (ja) * 2000-07-12 2012-03-28 株式会社アルバック 真空装置
JP4647122B2 (ja) * 2001-03-19 2011-03-09 株式会社アルバック 真空処理方法
JP2003229417A (ja) * 2001-11-28 2003-08-15 Tokyo Electron Ltd 真空処理装置及びその制御方法

Also Published As

Publication number Publication date
KR20070032968A (ko) 2007-03-23
WO2006003880A1 (ja) 2006-01-12
DE112005001539B4 (de) 2013-04-25
JPWO2006003880A1 (ja) 2008-04-17
KR100808820B1 (ko) 2008-03-03
DE112005001539T5 (de) 2007-05-16
CN1977363A (zh) 2007-06-06
JP4673308B2 (ja) 2011-04-20
US20070151669A1 (en) 2007-07-05
CN100492599C (zh) 2009-05-27
US7682481B2 (en) 2010-03-23
TW200607013A (en) 2006-02-16

Similar Documents

Publication Publication Date Title
CN100343950C (zh) 衬底加热装置和多室衬底处理系统
JP2006229085A (ja) プラズマ処理装置、熱処理装置、処理システム、前処理装置及び記憶媒体
JP2009062604A (ja) 真空処理システムおよび基板搬送方法
JP2009200159A (ja) 真空処理装置および真空処理工場
TWI719762B (zh) 成膜裝置
EP0416646B1 (en) Apparatus and method for processing substrates
US20190219330A1 (en) Methods and apparatus for processing a substrate to remove moisture and/or residue
JP4766500B2 (ja) 真空処理装置、および真空処理工場
CN112750738B (zh) 一种离子束刻蚀设备及其刻蚀方法
TWI380356B (enExample)
JP2741156B2 (ja) マルチチャンバー処理装置のクリーニング方法
JP3066691B2 (ja) マルチチャンバー処理装置及びそのクリーニング方法
TWI854203B (zh) 真空處理裝置
JP4521177B2 (ja) 真空処理装置及び真空処理システム
JP2003124205A (ja) 半導体製造装置
JPS6233745B2 (enExample)
JP4270413B2 (ja) プロセス装置
JP2005347667A (ja) 半導体製造装置
CN115142031B (zh) 成膜装置
CN214043597U (zh) 用于等离子体处理装置的传输装置和等离子体处理装置
JP2701810B2 (ja) プラズマ処理方法及びその装置
JP2008024975A (ja) 半導体製造装置
JP2912318B2 (ja) 真空処理装置用搬送システム
JPH0714905A (ja) 半導体製造装置における基板搬送機構付真空処理槽
JP2004111788A (ja) 基板処理装置

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent