DE112005001539B4 - Vakuumbearbeitungsvorrichtung und Verfahren zum Austausch einer Vakuumbearbeitungskammer einer solchen Vorrichtung - Google Patents

Vakuumbearbeitungsvorrichtung und Verfahren zum Austausch einer Vakuumbearbeitungskammer einer solchen Vorrichtung Download PDF

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Publication number
DE112005001539B4
DE112005001539B4 DE112005001539T DE112005001539T DE112005001539B4 DE 112005001539 B4 DE112005001539 B4 DE 112005001539B4 DE 112005001539 T DE112005001539 T DE 112005001539T DE 112005001539 T DE112005001539 T DE 112005001539T DE 112005001539 B4 DE112005001539 B4 DE 112005001539B4
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DE
Germany
Prior art keywords
processing chamber
chamber
processing
substrate
ausbringkammer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112005001539T
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German (de)
English (en)
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DE112005001539T5 (de
Inventor
Seiichi Takahashi
Takehisa Miyaya
Soo Boo Lim
Masayuki Satou
Kengo Tsutsumi
Yohei Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of DE112005001539T5 publication Critical patent/DE112005001539T5/de
Application granted granted Critical
Publication of DE112005001539B4 publication Critical patent/DE112005001539B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
DE112005001539T 2004-06-30 2005-06-28 Vakuumbearbeitungsvorrichtung und Verfahren zum Austausch einer Vakuumbearbeitungskammer einer solchen Vorrichtung Expired - Fee Related DE112005001539B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004-193569 2004-06-30
JP2004193569 2004-06-30
PCT/JP2005/011808 WO2006003880A1 (ja) 2004-06-30 2005-06-28 真空処理装置

Publications (2)

Publication Number Publication Date
DE112005001539T5 DE112005001539T5 (de) 2007-05-16
DE112005001539B4 true DE112005001539B4 (de) 2013-04-25

Family

ID=35782687

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112005001539T Expired - Fee Related DE112005001539B4 (de) 2004-06-30 2005-06-28 Vakuumbearbeitungsvorrichtung und Verfahren zum Austausch einer Vakuumbearbeitungskammer einer solchen Vorrichtung

Country Status (7)

Country Link
US (1) US7682481B2 (enExample)
JP (1) JP4673308B2 (enExample)
KR (1) KR100808820B1 (enExample)
CN (1) CN100492599C (enExample)
DE (1) DE112005001539B4 (enExample)
TW (1) TW200607013A (enExample)
WO (1) WO2006003880A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022129723A1 (de) 2022-11-10 2024-05-16 Aixtron Se CVD-Reaktor mit herausnehmbarem Prozesskammergehäuse

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100841741B1 (ko) * 2007-04-04 2008-06-27 주식회사 싸이맥스 진공처리장치
CN114481098A (zh) * 2022-01-17 2022-05-13 成都四威高科技产业园有限公司 一种具有防护功能的腔室pecvd设备传动装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257193A (ja) * 1988-04-08 1989-10-13 Sumitomo Electric Ind Ltd 半導体気相成長装置
JPH06267808A (ja) * 1993-03-15 1994-09-22 Hitachi Ltd チャンバ接続用ガイド機構付きマルチチャンバ装置
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
JP3453223B2 (ja) * 1994-08-19 2003-10-06 東京エレクトロン株式会社 処理装置
JP2000273631A (ja) * 1999-03-24 2000-10-03 Olympus Optical Co Ltd スパッタリング装置
JP2001035842A (ja) * 1999-07-19 2001-02-09 Sony Corp Ｃｖｄ装置及び半導体装置の製造方法
JP4906999B2 (ja) * 2000-07-12 2012-03-28 株式会社アルバック 真空装置
TWI290589B (en) * 2000-10-02 2007-12-01 Tokyo Electron Ltd Vacuum processing device
JP4647122B2 (ja) * 2001-03-19 2011-03-09 株式会社アルバック 真空処理方法
JP2003229417A (ja) * 2001-11-28 2003-08-15 Tokyo Electron Ltd 真空処理装置及びその制御方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257193A (ja) * 1988-04-08 1989-10-13 Sumitomo Electric Ind Ltd 半導体気相成長装置
JPH06267808A (ja) * 1993-03-15 1994-09-22 Hitachi Ltd チャンバ接続用ガイド機構付きマルチチャンバ装置
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022129723A1 (de) 2022-11-10 2024-05-16 Aixtron Se CVD-Reaktor mit herausnehmbarem Prozesskammergehäuse
WO2024099936A1 (de) 2022-11-10 2024-05-16 Aixtron Se Cvd-reaktor mit herausnehmbarem prozesskammergehäuse

Also Published As

Publication number Publication date
TW200607013A (en) 2006-02-16
CN1977363A (zh) 2007-06-06
JP4673308B2 (ja) 2011-04-20
JPWO2006003880A1 (ja) 2008-04-17
US7682481B2 (en) 2010-03-23
KR20070032968A (ko) 2007-03-23
US20070151669A1 (en) 2007-07-05
TWI380356B (enExample) 2012-12-21
KR100808820B1 (ko) 2008-03-03
CN100492599C (zh) 2009-05-27
WO2006003880A1 (ja) 2006-01-12
DE112005001539T5 (de) 2007-05-16

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Ipc: H01L0021670000

Effective date: 20121218

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Effective date: 20130726

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee