TWI375193B - - Google Patents

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Publication number
TWI375193B
TWI375193B TW097118732A TW97118732A TWI375193B TW I375193 B TWI375193 B TW I375193B TW 097118732 A TW097118732 A TW 097118732A TW 97118732 A TW97118732 A TW 97118732A TW I375193 B TWI375193 B TW I375193B
Authority
TW
Taiwan
Prior art keywords
material layer
resin material
display device
substrate
resin
Prior art date
Application number
TW097118732A
Other languages
English (en)
Chinese (zh)
Other versions
TW200915250A (en
Inventor
Mutsuko Hatano
Takashi Hattori
Original Assignee
Hitachi Displays Ltd
Panasonic Liquid Crystal Displ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd, Panasonic Liquid Crystal Displ filed Critical Hitachi Displays Ltd
Publication of TW200915250A publication Critical patent/TW200915250A/zh
Application granted granted Critical
Publication of TWI375193B publication Critical patent/TWI375193B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW097118732A 2007-05-23 2008-05-21 Method of manufacturing display device TW200915250A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007136139A JP5150138B2 (ja) 2007-05-23 2007-05-23 表示装置の製造方法

Publications (2)

Publication Number Publication Date
TW200915250A TW200915250A (en) 2009-04-01
TWI375193B true TWI375193B (https=) 2012-10-21

Family

ID=40072654

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097118732A TW200915250A (en) 2007-05-23 2008-05-21 Method of manufacturing display device

Country Status (5)

Country Link
US (1) US20080292786A1 (https=)
JP (1) JP5150138B2 (https=)
KR (1) KR100994870B1 (https=)
CN (1) CN101311789A (https=)
TW (1) TW200915250A (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010032768A (ja) 2008-07-29 2010-02-12 Hitachi Displays Ltd 表示装置およびその製造方法
JP2011227369A (ja) * 2010-04-22 2011-11-10 Hitachi Displays Ltd 画像表示装置及びその製造方法
US20110291544A1 (en) * 2010-05-31 2011-12-01 Industrial Technology Research Institute Gas barrier substrate, package of organic electro-luminenscent device and packaging method thereof
US9142797B2 (en) 2010-05-31 2015-09-22 Industrial Technology Research Institute Gas barrier substrate and organic electro-luminescent device
CN101980393A (zh) * 2010-09-21 2011-02-23 福建钧石能源有限公司 大面积柔性光电器件的制造方法
KR101295705B1 (ko) * 2011-04-25 2013-08-16 도레이첨단소재 주식회사 투명 플라스틱기판용 페녹시수지 조성물 및 이를 이용한 투명 플라스틱 기판소재
JP5786940B2 (ja) * 2011-07-15 2015-09-30 コニカミノルタ株式会社 ガスバリア性フィルム及びその製造方法
CN102636898B (zh) * 2012-03-14 2014-03-12 京东方科技集团股份有限公司 一种柔性显示装置的制备方法
JP5956867B2 (ja) * 2012-08-21 2016-07-27 株式会社ジャパンディスプレイ 表示装置の製造方法
CN104685553B (zh) * 2012-09-27 2017-10-24 新日铁住金化学株式会社 显示装置的制造方法
WO2014084529A1 (ko) * 2012-11-30 2014-06-05 주식회사 엘지화학 플렉서블 기판을 포함하는 유기 발광 소자 및 이의 제조방법
JP2014186169A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 表示装置の製造方法及び表示装置
JP2015060780A (ja) * 2013-09-20 2015-03-30 株式会社東芝 表示装置の製造方法及び製造システム
KR102462742B1 (ko) * 2013-12-02 2022-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
JP2016004112A (ja) * 2014-06-16 2016-01-12 株式会社ジャパンディスプレイ 表示装置の製造方法
KR102410594B1 (ko) * 2015-04-30 2022-06-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 구비하는 표시 패널
KR102288354B1 (ko) 2015-08-10 2021-08-11 삼성디스플레이 주식회사 플렉서블 디스플레이 장치의 제조 방법
JP6784969B2 (ja) 2015-10-22 2020-11-18 天馬微電子有限公司 薄膜デバイスとその製造方法
US11637009B2 (en) 2016-10-07 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
CN109087936A (zh) 2018-08-24 2018-12-25 京东方科技集团股份有限公司 一种柔性显示基板的制备方法
JP7306835B2 (ja) * 2019-02-19 2023-07-11 株式会社ジャパンディスプレイ 樹脂基板を有する装置及びその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
EP1758169A3 (en) * 1996-08-27 2007-05-23 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
JPH1126733A (ja) * 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
TWI225556B (en) * 2000-09-13 2004-12-21 Au Optronics Corp Manufacturing method of reflective liquid crystal display
JP2003066858A (ja) * 2001-08-23 2003-03-05 Sony Corp 薄膜デバイス基板の製造方法
US7230592B2 (en) * 2002-03-04 2007-06-12 Hitachi, Ltd. Organic electroluminescent light emitting display device
GB0208506D0 (en) * 2002-04-12 2002-05-22 Dupont Teijin Films Us Ltd Film coating
JP2004151561A (ja) * 2002-10-31 2004-05-27 Seiko Epson Corp 電気光学装置の製造方法
US7102155B2 (en) * 2003-09-04 2006-09-05 Hitachi, Ltd. Electrode substrate, thin film transistor, display device and their production
DE602004031142D1 (de) * 2003-11-06 2011-03-03 Sumitomo Chemical Co Dichroitischer guest-host-polarisierer mit einem orientierten polymerfilm
GB0327093D0 (en) * 2003-11-21 2003-12-24 Koninkl Philips Electronics Nv Active matrix displays and other electronic devices having plastic substrates
KR100623694B1 (ko) * 2004-08-30 2006-09-19 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자의 제조 방법
US20060244373A1 (en) * 2005-04-28 2006-11-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing thereof
KR100830341B1 (ko) * 2005-09-30 2008-05-16 삼성에스디아이 주식회사 액정표시장치

Also Published As

Publication number Publication date
US20080292786A1 (en) 2008-11-27
JP5150138B2 (ja) 2013-02-20
TW200915250A (en) 2009-04-01
KR20080103443A (ko) 2008-11-27
CN101311789A (zh) 2008-11-26
JP2008292608A (ja) 2008-12-04
KR100994870B1 (ko) 2010-11-16

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MM4A Annulment or lapse of patent due to non-payment of fees