TWI374951B - Integrated electroless deposition system - Google Patents

Integrated electroless deposition system Download PDF

Info

Publication number
TWI374951B
TWI374951B TW95127791A TW95127791A TWI374951B TW I374951 B TWI374951 B TW I374951B TW 95127791 A TW95127791 A TW 95127791A TW 95127791 A TW95127791 A TW 95127791A TW I374951 B TWI374951 B TW I374951B
Authority
TW
Taiwan
Prior art keywords
substrate
chamber
layer
processing
gas
Prior art date
Application number
TW95127791A
Other languages
English (en)
Chinese (zh)
Other versions
TW200716794A (en
Inventor
Dmitry Lubomirsky
Arulkumar Shanmugasundram
Ambra Allen D
Timothy W Weidman
Michael P Stewart
Eugene Rabinovich
Svetlana Sherman
Manoocher Birang
Yaxin Wang
Michael X Yang
Bradley Hansen
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/192,993 external-priority patent/US20060033678A1/en
Priority claimed from US11/428,230 external-priority patent/US20070111519A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200716794A publication Critical patent/TW200716794A/zh
Application granted granted Critical
Publication of TWI374951B publication Critical patent/TWI374951B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/6723Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • C23C18/1632Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1653Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1675Process conditions
    • C23C18/1682Control of atmosphere
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1675Process conditions
    • C23C18/1685Process conditions with supercritical condition, e.g. chemical fluid deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1689After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886Multistep pretreatment
    • C23C18/1889Multistep pretreatment with use of metal first
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electrochemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW95127791A 2005-07-29 2006-07-28 Integrated electroless deposition system TWI374951B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/192,993 US20060033678A1 (en) 2004-01-26 2005-07-29 Integrated electroless deposition system
US11/428,230 US20070111519A1 (en) 2003-10-15 2006-06-30 Integrated electroless deposition system

Publications (2)

Publication Number Publication Date
TW200716794A TW200716794A (en) 2007-05-01
TWI374951B true TWI374951B (en) 2012-10-21

Family

ID=37709161

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95127791A TWI374951B (en) 2005-07-29 2006-07-28 Integrated electroless deposition system

Country Status (2)

Country Link
TW (1) TWI374951B (fr)
WO (1) WO2007016218A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI633939B (zh) * 2016-02-26 2018-09-01 弘塑科技股份有限公司 製程液體供給方法及裝置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5295719B2 (ja) * 2008-10-31 2013-09-18 シャープ株式会社 メッキ処理装置
US9328427B2 (en) * 2012-09-28 2016-05-03 Sunpower Corporation Edgeless pulse plating and metal cleaning methods for solar cells
TWI559598B (zh) * 2014-05-16 2016-11-21 台灣塑膠工業股份有限公司 染料敏化太陽能電池的製造方法及製造設備
US11587807B2 (en) * 2018-10-28 2023-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Annealing apparatus and method thereof
CN113897649A (zh) * 2021-09-29 2022-01-07 新阳硅密(上海)半导体技术有限公司 一种结合tsv电镀前处理工艺方法
CN113881993A (zh) * 2021-09-29 2022-01-04 新阳硅密(上海)半导体技术有限公司 一种可优化电镀填孔能力的工艺方法
CN114232062A (zh) * 2021-12-24 2022-03-25 新阳硅密(上海)半导体技术有限公司 一种金属镀覆设备
CN114182333B (zh) * 2021-12-24 2023-06-23 新阳硅密(上海)半导体技术有限公司 一种共享晶圆夹具的金属镀覆设备和方法
CN114250501A (zh) * 2021-12-24 2022-03-29 新阳硅密(上海)半导体技术有限公司 一种可连续进行电镀和化镀的设备和方法
KR20230103310A (ko) * 2021-12-31 2023-07-07 세메스 주식회사 기판 지지 유닛 및 플라즈마 처리 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862023A (en) * 1972-09-15 1975-01-21 Ppg Industries Inc Electrode having silicide surface
US6110011A (en) * 1997-11-10 2000-08-29 Applied Materials, Inc. Integrated electrodeposition and chemical-mechanical polishing tool
US6551488B1 (en) * 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
KR100775159B1 (ko) * 2000-05-15 2007-11-12 에이에스엠 인터내셔널 엔.붸. 집적회로의 생산 공정
KR100797202B1 (ko) * 2000-06-23 2008-01-23 허니웰 인터내셔널 인코포레이티드 손상된 실리카 유전 필름에 소수성을 부여하는 방법 및 손상된 실리카 유전 필름 처리 방법
US6555909B1 (en) * 2001-01-11 2003-04-29 Advanced Micro Devices, Inc. Seedless barrier layers in integrated circuits and a method of manufacture therefor
WO2003042434A1 (fr) * 2001-11-14 2003-05-22 Asahi Engineering Co.,Ltd Procede et dispositif de traitement de surface d'un objet traite
US6770565B2 (en) * 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
US6899816B2 (en) * 2002-04-03 2005-05-31 Applied Materials, Inc. Electroless deposition method
US6821909B2 (en) * 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI633939B (zh) * 2016-02-26 2018-09-01 弘塑科技股份有限公司 製程液體供給方法及裝置

Also Published As

Publication number Publication date
WO2007016218A3 (fr) 2009-04-30
TW200716794A (en) 2007-05-01
WO2007016218A2 (fr) 2007-02-08

Similar Documents

Publication Publication Date Title
TWI374951B (en) Integrated electroless deposition system
US20060033678A1 (en) Integrated electroless deposition system
US20070111519A1 (en) Integrated electroless deposition system
US7615486B2 (en) Apparatus and method for integrated surface treatment and deposition for copper interconnect
TWI393186B (zh) 用以安排金屬沈積用之基板表面的方法及整合之系統
US8771804B2 (en) Processes and systems for engineering a copper surface for selective metal deposition
US8241701B2 (en) Processes and systems for engineering a barrier surface for copper deposition
JP4875492B2 (ja) 無電解堆積のための装置
US8415261B1 (en) Capping before barrier-removal IC fabrication method
US8747960B2 (en) Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
TWI443719B (zh) A substrate processing method, a program and a recording medium
KR101078627B1 (ko) 배리어층 표면 패시베이션을 위한 방법 및 시스템
JP2006501360A (ja) 無電界メッキシステム
WO2008002977A2 (fr) Appareil permettant d'appliquer une solution de placage pour dépôt anélectrolytique
SG174751A1 (en) Apparatus and method for integrated surface treatment and deposition for copper interconnect
US9287110B2 (en) Method and apparatus for wafer electroless plating
KR20090091336A (ko) 배리어와 구리 금속화물 간에 낮은 계면 산화물 접촉을 위한 방법 및 시스템
US20060003570A1 (en) Method and apparatus for electroless capping with vapor drying
JP2001181851A (ja) めっき方法及びめっき構造
JP2005116630A (ja) 配線形成方法及び装置
JP2003253488A (ja) 電解処理装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees