TWI371116B - Optical system for light emitting diodes - Google Patents

Optical system for light emitting diodes

Info

Publication number
TWI371116B
TWI371116B TW094107954A TW94107954A TWI371116B TW I371116 B TWI371116 B TW I371116B TW 094107954 A TW094107954 A TW 094107954A TW 94107954 A TW94107954 A TW 94107954A TW I371116 B TWI371116 B TW I371116B
Authority
TW
Taiwan
Prior art keywords
light emitting
optical system
emitting diodes
diodes
optical
Prior art date
Application number
TW094107954A
Other languages
English (en)
Other versions
TW200601589A (en
Inventor
Matthijs Hendrik Keuper
Michael R Krames
Gerd O Mueller
Original Assignee
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Lumileds Lighting Co filed Critical Philips Lumileds Lighting Co
Publication of TW200601589A publication Critical patent/TW200601589A/zh
Application granted granted Critical
Publication of TWI371116B publication Critical patent/TWI371116B/zh

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/12—Picture reproducers
    • H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141—Constructional details thereof
    • H04N9/315—Modulator illumination systems
    • H04N9/3152—Modulator illumination systems for shaping the light beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Led Device Packages (AREA)
  • Liquid Crystal (AREA)
  • Projection Apparatus (AREA)
  • Led Devices (AREA)
TW094107954A 2004-03-19 2005-03-16 Optical system for light emitting diodes TWI371116B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/804,314 US7408201B2 (en) 2004-03-19 2004-03-19 Polarized semiconductor light emitting device

Publications (2)

Publication Number Publication Date
TW200601589A TW200601589A (en) 2006-01-01
TWI371116B true TWI371116B (en) 2012-08-21

Family

ID=34838933

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094107954A TWI371116B (en) 2004-03-19 2005-03-16 Optical system for light emitting diodes

Country Status (4)

Country Link
US (2) US7408201B2 (zh)
EP (1) EP1577700A3 (zh)
JP (1) JP5129437B2 (zh)
TW (1) TWI371116B (zh)

Families Citing this family (150)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7091661B2 (en) * 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a reflective polarizer
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7285799B2 (en) * 2004-04-21 2007-10-23 Philip Lumileds Lighting Company, Llc Semiconductor light emitting devices including in-plane light emitting layers
CN101076744B (zh) * 2004-04-23 2010-05-12 光处方革新有限公司 用于发光二极管的光学歧管
US11158768B2 (en) * 2004-05-07 2021-10-26 Bruce H. Baretz Vacuum light emitting diode
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US20070267646A1 (en) * 2004-06-03 2007-11-22 Philips Lumileds Lighting Company, Llc Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic
US7255469B2 (en) * 2004-06-30 2007-08-14 3M Innovative Properties Company Phosphor based illumination system having a light guide and an interference reflector
US7182498B2 (en) * 2004-06-30 2007-02-27 3M Innovative Properties Company Phosphor based illumination system having a plurality of light guides and an interference reflector
US20060002108A1 (en) * 2004-06-30 2006-01-05 Ouderkirk Andrew J Phosphor based illumination system having a short pass reflector and method of making same
US7204630B2 (en) * 2004-06-30 2007-04-17 3M Innovative Properties Company Phosphor based illumination system having a plurality of light guides and an interference reflector
US7213958B2 (en) * 2004-06-30 2007-05-08 3M Innovative Properties Company Phosphor based illumination system having light guide and an interference reflector
US7204631B2 (en) * 2004-06-30 2007-04-17 3M Innovative Properties Company Phosphor based illumination system having a plurality of light guides and an interference reflector
US20060091412A1 (en) * 2004-10-29 2006-05-04 Wheatley John A Polarized LED
US7543959B2 (en) * 2005-10-11 2009-06-09 Philips Lumiled Lighting Company, Llc Illumination system with optical concentrator and wavelength converting element
FR2893215A1 (fr) * 2005-11-04 2007-05-11 Thomson Licensing Sa Diode organique electroluminescente a cavite optique de resonnance et a extracteur servant de filtre spatial de lumiere
US7540616B2 (en) * 2005-12-23 2009-06-02 3M Innovative Properties Company Polarized, multicolor LED-based illumination source
US7918582B2 (en) * 2005-12-30 2011-04-05 Dialight Corporation Signal light using phosphor coated LEDs
WO2007079423A2 (en) * 2005-12-30 2007-07-12 Dialight Corporation Method and apparatus for providing a light source that combines different color leds
US7832878B2 (en) 2006-03-06 2010-11-16 Innovations In Optics, Inc. Light emitting diode projection system
CN101395729B (zh) * 2006-03-06 2010-06-23 皇家飞利浦电子股份有限公司 发光二极管模块
US20070236956A1 (en) * 2006-03-31 2007-10-11 Gelcore, Llc Super bright LED power package
US8174025B2 (en) * 2006-06-09 2012-05-08 Philips Lumileds Lighting Company, Llc Semiconductor light emitting device including porous layer
KR100818451B1 (ko) * 2006-07-03 2008-04-01 삼성전기주식회사 편광성을 갖는 반도체 발광 소자
KR100809236B1 (ko) * 2006-08-30 2008-03-05 삼성전기주식회사 편광 발광 다이오드
US20090086491A1 (en) 2007-09-28 2009-04-02 Ruud Lighting, Inc. Aerodynamic LED Floodlight Fixture
US7686469B2 (en) 2006-09-30 2010-03-30 Ruud Lighting, Inc. LED lighting fixture
US9028087B2 (en) 2006-09-30 2015-05-12 Cree, Inc. LED light fixture
US7952262B2 (en) 2006-09-30 2011-05-31 Ruud Lighting, Inc. Modular LED unit incorporating interconnected heat sinks configured to mount and hold adjacent LED modules
US9243794B2 (en) 2006-09-30 2016-01-26 Cree, Inc. LED light fixture with fluid flow to and from the heat sink
EP2087530A1 (en) * 2006-11-10 2009-08-12 Philips Intellectual Property & Standards GmbH Illumination system comprising monolithic ceramic luminescence converter
US7905605B2 (en) * 2006-12-13 2011-03-15 Koninklijke Philips Electronics N.V. Multi-primary LED projection system
US7618163B2 (en) * 2007-04-02 2009-11-17 Ruud Lighting, Inc. Light-directing LED apparatus
CN201053628Y (zh) * 2007-05-30 2008-04-30 鹤山丽得电子实业有限公司 一种尖头led
US7766495B2 (en) * 2007-06-25 2010-08-03 Samsung Led Co., Ltd. Reflector shapes for light emitting diode-polarized light sources
US7819557B2 (en) * 2007-06-25 2010-10-26 Rensselaer Polytechnic Institute Encapsulant shapes for light emitting devices lacking rotational symmetry designed to enhance extraction of light with a particular linear polarization
DE102007029391A1 (de) * 2007-06-26 2009-01-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US7547114B2 (en) 2007-07-30 2009-06-16 Ylx Corp. Multicolor illumination device using moving plate with wavelength conversion materials
RU2479071C2 (ru) * 2007-10-25 2013-04-10 Конинклейке Филипс Электроникс Н.В. Устройство для излучения поляризованного света
WO2009070809A1 (en) * 2007-11-30 2009-06-04 The Regents Of The University Of California High light extraction efficiency nitride based light emitting diode by surface roughening
DE102007060202A1 (de) * 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Polarisierte Strahlung emittierendes Halbleiterbauelement
WO2009097611A1 (en) * 2008-02-01 2009-08-06 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
KR20100129280A (ko) * 2008-02-01 2010-12-08 더 리전츠 오브 더 유니버시티 오브 캘리포니아 증가된 인듐 도입에 의한 질화물 발광 다이오드들의 광학 편광의 강화
US7719022B2 (en) * 2008-05-06 2010-05-18 Palo Alto Research Center Incorporated Phosphor illumination optics for LED light sources
US8348475B2 (en) 2008-05-23 2013-01-08 Ruud Lighting, Inc. Lens with controlled backlight management
US9423096B2 (en) 2008-05-23 2016-08-23 Cree, Inc. LED lighting apparatus
US8388193B2 (en) 2008-05-23 2013-03-05 Ruud Lighting, Inc. Lens with TIR for off-axial light distribution
US20110180781A1 (en) * 2008-06-05 2011-07-28 Soraa, Inc Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN
US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
CN102124582B (zh) * 2008-06-26 2013-11-06 3M创新有限公司 半导体光转换构造
US20110101402A1 (en) * 2008-06-26 2011-05-05 Jun-Ying Zhang Semiconductor light converting construction
US8461608B2 (en) * 2008-06-26 2013-06-11 3M Innovative Properties Company Light converting construction
WO2009158158A2 (en) * 2008-06-26 2009-12-30 3M Innovative Properties Company Method of fabricating light extractor
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8259769B1 (en) 2008-07-14 2012-09-04 Soraa, Inc. Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
US7841750B2 (en) 2008-08-01 2010-11-30 Ruud Lighting, Inc. Light-directing lensing member with improved angled light distribution
KR20110034695A (ko) * 2008-08-05 2011-04-05 더 리전츠 오브 더 유니버시티 오브 캘리포니아 편광 감응 발광 다이오드들을 기초로 하는 조정가능한 백색 광
US20100051983A1 (en) * 2008-08-29 2010-03-04 Frank Shum Polarization recycling optics for leds
US8252662B1 (en) 2009-03-28 2012-08-28 Soraa, Inc. Method and structure for manufacture of light emitting diode devices using bulk GaN
US9531164B2 (en) 2009-04-13 2016-12-27 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8294179B1 (en) 2009-04-17 2012-10-23 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8242522B1 (en) 2009-05-12 2012-08-14 Soraa, Inc. Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
US8254425B1 (en) 2009-04-17 2012-08-28 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8416825B1 (en) 2009-04-17 2013-04-09 Soraa, Inc. Optical device structure using GaN substrates and growth structure for laser applications
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US9255686B2 (en) 2009-05-29 2016-02-09 Cree, Inc. Multi-lens LED-array optic system
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US20100309943A1 (en) * 2009-06-05 2010-12-09 The Regents Of The University Of California LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
US8314429B1 (en) 2009-09-14 2012-11-20 Soraa, Inc. Multi color active regions for white light emitting diode
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
KR101368906B1 (ko) 2009-09-18 2014-02-28 소라, 인코포레이티드 전력 발광 다이오드 및 전류 밀도 작동 방법
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
WO2011048952A1 (ja) * 2009-10-22 2011-04-28 日本電気株式会社 発光素子および該発光素子を用いた画像表示装置
JP5582147B2 (ja) 2009-10-22 2014-09-03 日本電気株式会社 発光素子および該発光素子を用いた画像表示装置
US7998526B2 (en) * 2009-12-01 2011-08-16 Bridgelux, Inc. Method and system for dynamic in-situ phosphor mixing and jetting
US9927611B2 (en) 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
JP5468517B2 (ja) 2010-10-19 2014-04-09 パナソニック株式会社 半導体発光デバイス
JPWO2012053245A1 (ja) * 2010-10-21 2014-02-24 日本電気株式会社 光源装置および投射型表示装置
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US8975615B2 (en) 2010-11-09 2015-03-10 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9318875B1 (en) 2011-01-24 2016-04-19 Soraa Laser Diode, Inc. Color converting element for laser diode
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
TWI427397B (zh) 2011-03-23 2014-02-21 Delta Electronics Inc 光源系統
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
US9057880B2 (en) * 2011-11-30 2015-06-16 Reald Inc. Laser beam scanned display apparatus and method thereof
US20130155645A1 (en) * 2011-12-19 2013-06-20 Tamas Marius System and method for reducing glare
WO2013111542A1 (ja) 2012-01-23 2013-08-01 パナソニック株式会社 窒化物半導体発光装置
US9541258B2 (en) 2012-02-29 2017-01-10 Cree, Inc. Lens for wide lateral-angle distribution
US9541257B2 (en) 2012-02-29 2017-01-10 Cree, Inc. Lens for primarily-elongate light distribution
US10408429B2 (en) 2012-02-29 2019-09-10 Ideal Industries Lighting Llc Lens for preferential-side distribution
US9020003B1 (en) 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
US9800016B1 (en) 2012-04-05 2017-10-24 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9343871B1 (en) 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
USD697664S1 (en) 2012-05-07 2014-01-14 Cree, Inc. LED lens
JP5841498B2 (ja) * 2012-06-18 2016-01-13 国立大学法人東京工業大学 対象物検出装置
US9099843B1 (en) 2012-07-19 2015-08-04 Soraa Laser Diode, Inc. High operating temperature laser diodes
CN102854731B (zh) * 2012-07-24 2015-11-25 深圳市绎立锐光科技开发有限公司 发光装置及相关投影系统
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
USD718490S1 (en) 2013-03-15 2014-11-25 Cree, Inc. LED lens
JP2014183192A (ja) * 2013-03-19 2014-09-29 Polatechno Co Ltd 偏光ｌｅｄ及びそれを用いた表示装置
US9166372B1 (en) 2013-06-28 2015-10-20 Soraa Laser Diode, Inc. Gallium nitride containing laser device configured on a patterned substrate
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9520695B2 (en) 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9523479B2 (en) 2014-01-03 2016-12-20 Cree, Inc. LED lens
US9209596B1 (en) 2014-02-07 2015-12-08 Soraa Laser Diode, Inc. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9564736B1 (en) 2014-06-26 2017-02-07 Soraa Laser Diode, Inc. Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
KR20160007916A (ko) * 2014-07-10 2016-01-21 일진엘이디(주) 나노 입자 층을 포함하는 질화물 반도체 발광소자
US9410674B2 (en) 2014-08-18 2016-08-09 Cree, Inc. LED lens
US9246311B1 (en) 2014-11-06 2016-01-26 Soraa Laser Diode, Inc. Method of manufacture for an ultraviolet laser diode
US9666677B1 (en) 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
US9653642B1 (en) 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
US10938182B2 (en) 2015-08-19 2021-03-02 Soraa Laser Diode, Inc. Specialized integrated light source using a laser diode
US11437775B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. Integrated light source using a laser diode
US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
KR101795218B1 (ko) * 2016-03-07 2017-11-08 현대자동차주식회사 차량용 조명 장치
KR101822259B1 (ko) * 2016-03-09 2018-01-26 현대자동차주식회사 차량용 조명 장치
US11287563B2 (en) * 2016-12-01 2022-03-29 Ostendo Technologies, Inc. Polarized light emission from micro-pixel displays and methods of fabrication thereof
US10468566B2 (en) 2017-04-10 2019-11-05 Ideal Industries Lighting Llc Hybrid lens for controlled light distribution
CN109254485B (zh) * 2017-06-29 2021-05-14 深圳光峰科技股份有限公司 光源装置及投影系统
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US11228158B2 (en) 2019-05-14 2022-01-18 Kyocera Sld Laser, Inc. Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
US10903623B2 (en) 2019-05-14 2021-01-26 Soraa Laser Diode, Inc. Method and structure for manufacturable large area gallium and nitrogen containing substrate
US11313671B2 (en) * 2019-05-28 2022-04-26 Mitutoyo Corporation Chromatic confocal range sensing system with enhanced spectrum light source configuration

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US428381A (en) * 1890-05-20 Alarm-latch
US547530A (en) * 1895-10-08 white
US3599109A (en) 1969-04-16 1971-08-10 Bell Telephone Labor Inc Second photon visible emitting phosphor and device utilizing same
US4084130A (en) * 1974-01-18 1978-04-11 Texas Instruments Incorporated Laser for integrated optical circuits
US4240692A (en) 1975-12-17 1980-12-23 The University Of Chicago Energy transmission
US4289381A (en) 1979-07-02 1981-09-15 Hughes Aircraft Company High selectivity thin film polarizer
US5479011A (en) * 1992-12-18 1995-12-26 Spectra-Physics Scanning Systems, Inc. Variable focus optical system for data reading
JPH0763609A (ja) 1993-08-27 1995-03-10 Minolta Co Ltd 光シャッターを有する分光装置
ES2132593T3 (es) * 1993-11-15 1999-08-16 Allied Signal Inc Elemento optico para uso en una red de elementos opticos en una disposicion de presentacion visual.
US5808624A (en) * 1994-07-29 1998-09-15 Brother Kogyo Kabushiki Kaisha Picture making apparatus for creating a picture for printing by assembling and positioning component parts
JP3816176B2 (ja) * 1996-02-23 2006-08-30 富士通株式会社 半導体発光素子及び光半導体装置
US6072197A (en) 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US5805624A (en) 1996-07-30 1998-09-08 Hewlett-Packard Company Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate
US5727108A (en) 1996-09-30 1998-03-10 Troy Investments, Inc. High efficiency compound parabolic concentrators and optical fiber powered spot luminaire
US5975703A (en) 1996-09-30 1999-11-02 Digital Optics International Image projection system
WO1998019375A1 (fr) * 1996-10-30 1998-05-07 Hitachi, Ltd. Machine de traitement optique de l'information et dispositif a semi-conducteur emetteur de lumiere afferent
US5955749A (en) 1996-12-02 1999-09-21 Massachusetts Institute Of Technology Light emitting device utilizing a periodic dielectric structure
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6849472B2 (en) 1997-09-30 2005-02-01 Lumileds Lighting U.S., Llc Nitride semiconductor device with reduced polarization fields
JP3180743B2 (ja) * 1997-11-17 2001-06-25 日本電気株式会社 窒化化合物半導体発光素子およびその製法
US6364487B1 (en) * 1999-01-29 2002-04-02 Agilent Technologies, Inc. Solid state based illumination source for a projection display
US6273589B1 (en) * 1999-01-29 2001-08-14 Agilent Technologies, Inc. Solid state illumination source utilizing dichroic reflectors
US6257737B1 (en) 1999-05-20 2001-07-10 Philips Electronics Na Low-profile luminaire having a reflector for mixing light from a multi-color linear array of LEDs
US6122103A (en) 1999-06-22 2000-09-19 Moxtech Broadband wire grid polarizer for the visible spectrum
JP3511372B2 (ja) 1999-08-31 2004-03-29 シャープ株式会社 半導体発光素子およびそれを使用した表示装置
JP3791584B2 (ja) 1999-12-28 2006-06-28 セイコーエプソン株式会社 面発光型半導体レーザおよび面発光型半導体レーザアレイ
CA2401461C (en) 2000-03-06 2008-06-03 Teledyne Lighting And Display Products, Inc. Led light source with field-of-view-controlling optics
WO2001093387A2 (en) 2000-05-31 2001-12-06 Sandia Corporation Long wavelength vertical cavity surface emitting laser
US6853663B2 (en) 2000-06-02 2005-02-08 Agilent Technologies, Inc. Efficiency GaN-based light emitting devices
US6398368B2 (en) * 2000-06-09 2002-06-04 Acer Communications And Multimedia Inc. Light pipe for a projector system
JP2002022981A (ja) 2000-07-05 2002-01-23 Nec Corp フォトニック結晶多層基板およびその製造方法
JP2002182157A (ja) * 2000-12-12 2002-06-26 Fuji Photo Film Co Ltd 照明光学系及びこれを用いたプロジェクター装置、露光装置、光造形装置、画像形成装置
KR100451733B1 (ko) * 2000-12-28 2004-10-08 엘지전자 주식회사 화상 투사 장치
JP4011292B2 (ja) 2001-01-15 2007-11-21 株式会社日立製作所 発光素子、及び表示装置
US6930737B2 (en) * 2001-01-16 2005-08-16 Visteon Global Technologies, Inc. LED backlighting system
JP2002244211A (ja) * 2001-02-22 2002-08-30 Ricoh Co Ltd 画像投射装置
US6417019B1 (en) * 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode
JP4754723B2 (ja) * 2001-06-07 2011-08-24 星和電機株式会社 発光ダイオードランプ
US6897916B2 (en) 2001-09-11 2005-05-24 Nitto Denko Corporation Polarizing plate, optical element, and liquid crystal display
JP2003121777A (ja) * 2001-10-18 2003-04-23 Sony Corp レンズアレイを用いた照明装置及び画像表示装置
US6739723B1 (en) 2001-12-07 2004-05-25 Delta Electronics, Inc. Polarization recapture system for liquid crystal-based data projectors
JP3891000B2 (ja) * 2002-02-15 2007-03-07 日本ビクター株式会社 液晶表示装置およびその駆動方法
KR100992960B1 (ko) 2002-04-15 2010-11-09 더 리전츠 오브 더 유니버시티 오브 캘리포니아 유기금속 화학기상 증착법에 의해 성장된 무극성 α면질화갈륨 박막
US6648475B1 (en) * 2002-05-20 2003-11-18 Eastman Kodak Company Method and apparatus for increasing color gamut of a display
US6829281B2 (en) 2002-06-19 2004-12-07 Finisar Corporation Vertical cavity surface emitting laser using photonic crystals
JP4074498B2 (ja) 2002-09-25 2008-04-09 セイコーエプソン株式会社 面発光型発光素子、光モジュールおよび光伝達装置
US6730940B1 (en) * 2002-10-29 2004-05-04 Lumileds Lighting U.S., Llc Enhanced brightness light emitting device spot emitter
US7118438B2 (en) * 2003-01-27 2006-10-10 3M Innovative Properties Company Methods of making phosphor based light sources having an interference reflector
US7152977B2 (en) * 2003-04-24 2006-12-26 Qubic Light Corporation Solid state light engine optical system
US7080932B2 (en) * 2004-01-26 2006-07-25 Philips Lumileds Lighting Company, Llc LED with an optical system to increase luminance by recycling emitted light

Also Published As

Publication number Publication date
EP1577700A3 (en) 2011-10-05
US20080265263A1 (en) 2008-10-30
JP2005328042A (ja) 2005-11-24
TW200601589A (en) 2006-01-01
JP5129437B2 (ja) 2013-01-30
US20050224826A1 (en) 2005-10-13
EP1577700A2 (en) 2005-09-21
US7408201B2 (en) 2008-08-05

Similar Documents

Publication Publication Date Title
TWI371116B (en) Optical system for light emitting diodes
EP1991907A4 (en) LED PROJECTION SYSTEM
EP1743358A4 (en) LEDS COMPONENT
IL190427A0 (en) Optical device for led light sources
EP1760794A4 (en) WHITE LIGHT EMITTING DIODE CONSTRUCTION ELEMENT
GB2433838B (en) Light emitting device
EP1614123A4 (en) PHOTOEMETER SYSTEMS
GB2398682B (en) Apparatus for controlling light emitting diodes
EP1766692A4 (en) LUMINESCENT DEVICE
EP1820372A4 (en) LIGHT-EMITTING COMPONENT
EP1795052A4 (en) LIGHT EMITTING DEVICE
EP1803172A4 (en) LIGHT-EMITTING COMPONENT
EP1836723A4 (en) SYSTEM AND METHODS FOR PRODUCING LIGHT EMITTING DIODE MOSAIC
HK1097594A1 (en) Light emitting diode based measurement systems
HK1104673A1 (en) Organic light emitting diode
EP1808640A4 (en) LIGHT EMITTING DEVICE
EP1938392A4 (en) LIGHT EMISSION DIODE WITH LIGHT DIFFUSION
EP2573829B8 (en) Light emitting diode module
GB0423506D0 (en) Light emitting complex salts
GB0420632D0 (en) Light emitting diode (LED) control
EP1729381A4 (en) LIGHT SOURCE WITH VARIABLE WAVELENGTH OF DBR TYPE
EP1776723A4 (en) SEMICONDUCTOR DIODE EMITTING LIGHT
TWI370298B (en) Backlight unit using light emitting diode
GB0515289D0 (en) Light emitting diode
EP1729349A4 (de) Hochleistungs-leuchtdiode

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees