TWI370040B - Simultanes doppelseitenschleifen von halbleiterscheiben - Google Patents

Simultanes doppelseitenschleifen von halbleiterscheiben

Info

Publication number
TWI370040B
TWI370040B TW097139545A TW97139545A TWI370040B TW I370040 B TWI370040 B TW I370040B TW 097139545 A TW097139545 A TW 097139545A TW 97139545 A TW97139545 A TW 97139545A TW I370040 B TWI370040 B TW I370040B
Authority
TW
Taiwan
Prior art keywords
doppelseitenschleifen
halbleiterscheiben
simultanes
von
von halbleiterscheiben
Prior art date
Application number
TW097139545A
Other languages
English (en)
Other versions
TW200918237A (en
Inventor
Joachim Junge
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of TW200918237A publication Critical patent/TW200918237A/zh
Application granted granted Critical
Publication of TWI370040B publication Critical patent/TWI370040B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
TW097139545A 2007-10-17 2008-10-15 Simultanes doppelseitenschleifen von halbleiterscheiben TWI370040B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007049810A DE102007049810B4 (de) 2007-10-17 2007-10-17 Simultanes Doppelseitenschleifen von Halbleiterscheiben

Publications (2)

Publication Number Publication Date
TW200918237A TW200918237A (en) 2009-05-01
TWI370040B true TWI370040B (en) 2012-08-11

Family

ID=40458798

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097139545A TWI370040B (en) 2007-10-17 2008-10-15 Simultanes doppelseitenschleifen von halbleiterscheiben

Country Status (7)

Country Link
US (1) US8197300B2 (zh)
JP (1) JP4921444B2 (zh)
KR (1) KR101023997B1 (zh)
CN (1) CN101417405B (zh)
DE (1) DE102007049810B4 (zh)
SG (1) SG152124A1 (zh)
TW (1) TWI370040B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101103146B1 (ko) * 2011-09-05 2012-01-04 이화다이아몬드공업 주식회사 연삭 품질이 우수한 ｏｌｅｄ 기판용 멀티 연삭 휠 및 이를 이용한 ｏｌｅｄ 기판 연삭 방법
US9960088B2 (en) * 2011-11-07 2018-05-01 Taiwan Semiconductor Manufacturing Company, Ltd. End point detection in grinding
US9358660B2 (en) 2011-11-07 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Grinding wheel design with elongated teeth arrangement
WO2013119261A1 (en) * 2012-02-09 2013-08-15 Duescher Wayne O Coplanar alignment apparatus for rotary spindles
US20130217228A1 (en) 2012-02-21 2013-08-22 Masako Kodera Method for fabricating semiconductor device
JP5724958B2 (ja) * 2012-07-03 2015-05-27 信越半導体株式会社 両頭研削装置及びワークの両頭研削方法
GB2516916B (en) 2013-08-06 2016-09-14 Lacsop Ltd Method and apparatus for determining the mass of a body
GB2516917B (en) * 2013-08-06 2018-02-07 Lacsop Ltd Surface angle measuring device
JP6327007B2 (ja) 2014-06-24 2018-05-23 株式会社Sumco 研削装置および研削方法
KR101597209B1 (ko) * 2014-07-30 2016-02-24 주식회사 엘지실트론 웨이퍼 연마 장치
CN105881213A (zh) * 2014-09-01 2016-08-24 曾庆明 一种精密双面研磨机的控制器
DE102017215705A1 (de) 2017-09-06 2019-03-07 Siltronic Ag Vorrichtung und Verfahren zum doppelseitigen Schleifen von Halbleiterscheiben
KR20200063491A (ko) * 2018-11-28 2020-06-05 주식회사 케이씨텍 기판 처리 장치
EP3900876B1 (de) 2020-04-23 2024-05-01 Siltronic AG Verfahren zum schleifen einer halbleiterscheibe
CN112985281B (zh) * 2021-02-22 2022-08-30 彩虹（合肥）液晶玻璃有限公司 一种液晶玻璃基板磨边磨轮外径测量装置
EP4144480B1 (de) 2021-09-01 2024-01-31 Siltronic AG Verfahren zum schleifen von halbleiterscheiben
CN114871955B (zh) * 2022-05-25 2023-05-05 郑州磨料磨具磨削研究所有限公司 一种超硬磨料磨具的精密加工方法及系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133637A (en) * 1980-03-24 1981-10-19 Agency Of Ind Science & Technol Torque meter for grinder
JPH0679596A (ja) * 1992-09-01 1994-03-22 Matsushita Electric Ind Co Ltd 両頭研削機
US6296553B1 (en) * 1997-04-02 2001-10-02 Nippei Toyama Corporation Grinding method, surface grinder, workpiece support, mechanism and work rest
JPH11254312A (ja) 1998-03-11 1999-09-21 Super Silicon Kenkyusho:Kk 形状制御を伴ったウェーハの枚葉加工方法及び加工装置
EP1118429B1 (en) 1999-05-07 2007-10-24 Shin-Etsu Handotai Co., Ltd Method and device for simultaneously grinding double surfaces, and method and device for simultaneously lapping double surfaces
JP2001062718A (ja) * 1999-08-20 2001-03-13 Super Silicon Kenkyusho:Kk 両頭研削装置及び砥石位置修正方法
JP2002292558A (ja) 2001-03-30 2002-10-08 Toyoda Mach Works Ltd 枚葉式研磨装置
KR100954534B1 (ko) 2002-10-09 2010-04-23 고요 기카이 고교 가부시키가이샤 얇은 원판형상 공작물의 양면 연삭방법 및 양면 연삭장치
JP2005201862A (ja) * 2004-01-19 2005-07-28 Keyence Corp 接触式変位測定器
DE102004005702A1 (de) 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
DE102004011996B4 (de) * 2004-03-11 2007-12-06 Siltronic Ag Vorrichtung zum simultanen beidseitigen Schleifen von scheibenförmigen Werkstücken
DE102004053308A1 (de) * 2004-11-04 2006-03-23 Siltronic Ag Verfahren und Vorrichtung zum gleichzeitigen Schleifen beider Seiten eines scheibenförmigen Werkstücks sowie damit herstellbare Halbleiterscheibe

Also Published As

Publication number Publication date
KR20090039604A (ko) 2009-04-22
JP2009095976A (ja) 2009-05-07
US8197300B2 (en) 2012-06-12
SG152124A1 (en) 2009-05-29
DE102007049810B4 (de) 2012-03-22
KR101023997B1 (ko) 2011-03-28
TW200918237A (en) 2009-05-01
JP4921444B2 (ja) 2012-04-25
CN101417405A (zh) 2009-04-29
DE102007049810A1 (de) 2009-04-23
CN101417405B (zh) 2011-12-14
US20090104846A1 (en) 2009-04-23

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