TWI369581B - Photoacid generators, chemically amplified resist compositions, and patterning process - Google Patents
Photoacid generators, chemically amplified resist compositions, and patterning processInfo
- Publication number
- TWI369581B TWI369581B TW096121379A TW96121379A TWI369581B TW I369581 B TWI369581 B TW I369581B TW 096121379 A TW096121379 A TW 096121379A TW 96121379 A TW96121379 A TW 96121379A TW I369581 B TWI369581 B TW I369581B
- Authority
- TW
- Taiwan
- Prior art keywords
- patterning process
- chemically amplified
- amplified resist
- resist compositions
- photoacid generators
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
- C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
- C07D333/26—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
- C07D333/30—Hetero atoms other than halogen
- C07D333/36—Nitrogen atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials For Photolithography (AREA)
- Heterocyclic Compounds Containing Sulfur Atoms (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006164383A JP4623311B2 (ja) | 2006-06-14 | 2006-06-14 | 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200821749A TW200821749A (en) | 2008-05-16 |
TWI369581B true TWI369581B (en) | 2012-08-01 |
Family
ID=38861970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096121379A TWI369581B (en) | 2006-06-14 | 2007-06-13 | Photoacid generators, chemically amplified resist compositions, and patterning process |
Country Status (4)
Country | Link |
---|---|
US (1) | US7498126B2 (zh) |
JP (1) | JP4623311B2 (zh) |
KR (1) | KR100994874B1 (zh) |
TW (1) | TWI369581B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI518458B (zh) * | 2008-03-28 | 2016-01-21 | 富士軟片股份有限公司 | 正型感光性樹脂組成物及使用它的硬化膜形成方法 |
JP4718623B2 (ja) * | 2008-03-28 | 2011-07-06 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法 |
JP4676542B2 (ja) * | 2008-03-28 | 2011-04-27 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法 |
JP5136792B2 (ja) | 2008-11-21 | 2013-02-06 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
KR101597767B1 (ko) * | 2009-01-22 | 2016-02-26 | 삼성디스플레이 주식회사 | 감광성 수지 조성물 및 이를 이용한 패턴의 형성 방법 |
JP5321498B2 (ja) * | 2010-02-23 | 2013-10-23 | 信越化学工業株式会社 | 封止材パターンの形成方法 |
JP5348062B2 (ja) * | 2010-04-23 | 2013-11-20 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料を用いたレジストパターン形成方法及びメッキパターン形成方法 |
JP5729313B2 (ja) * | 2011-01-19 | 2015-06-03 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
US10095113B2 (en) * | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
JP2022102496A (ja) * | 2020-12-25 | 2022-07-07 | 東京応化工業株式会社 | レジスト組成物、及びレジストパターン形成方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2906999B2 (ja) | 1994-04-26 | 1999-06-21 | 信越化学工業株式会社 | レジスト材料 |
JP3830183B2 (ja) | 1995-09-29 | 2006-10-04 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
JP3587413B2 (ja) | 1995-12-20 | 2004-11-10 | 東京応化工業株式会社 | 化学増幅型レジスト組成物及びそれに用いる酸発生剤 |
JP3798458B2 (ja) | 1996-02-02 | 2006-07-19 | 東京応化工業株式会社 | オキシムスルホネート化合物及びレジスト用酸発生剤 |
JP3879139B2 (ja) | 1996-05-08 | 2007-02-07 | 住友化学株式会社 | グリオキシム系エステル、その製法および用途 |
TW550439B (en) * | 1997-07-01 | 2003-09-01 | Ciba Sc Holding Ag | New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates |
JP3796559B2 (ja) | 1997-10-08 | 2006-07-12 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
TW546543B (en) * | 1997-10-08 | 2003-08-11 | Shinetsu Chemical Co | Resist material and patterning process |
NL1014545C2 (nl) * | 1999-03-31 | 2002-02-26 | Ciba Sc Holding Ag | Oxim-derivaten en de toepassing daarvan als latente zuren. |
SG78412A1 (en) | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
JP2002202603A (ja) | 2000-10-23 | 2002-07-19 | Jsr Corp | 感放射線性樹脂組成物 |
EP1204001B1 (en) * | 2000-11-01 | 2013-09-11 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
JP3865048B2 (ja) | 2000-11-01 | 2007-01-10 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4198351B2 (ja) | 2000-12-07 | 2008-12-17 | 信越化学工業株式会社 | 高分子化合物の製造方法及び該高分子化合物を用いたレジスト材料 |
KR20020045566A (ko) * | 2000-12-07 | 2002-06-19 | 카나가와 치히로 | 고분자 화합물의 제조 방법 및 이 고분자 화합물을 사용한레지스트 재료 |
JP2002278053A (ja) | 2001-03-16 | 2002-09-27 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JP3867778B2 (ja) | 2001-07-05 | 2007-01-10 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP3849486B2 (ja) * | 2001-10-19 | 2006-11-22 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP3821217B2 (ja) * | 2001-10-30 | 2006-09-13 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP2003307840A (ja) | 2002-02-13 | 2003-10-31 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JP4110392B2 (ja) * | 2002-03-22 | 2008-07-02 | 信越化学工業株式会社 | 化学増幅レジスト材料及びパターン形成方法 |
JP3913184B2 (ja) * | 2002-03-22 | 2007-05-09 | 独立行政法人科学技術振興機構 | 液晶レンズ |
JP2004008766A (ja) | 2002-06-10 | 2004-01-15 | Eager Co Ltd | 歯茎マッサージ材料と歯茎マッサージ器具 |
JP4000473B2 (ja) * | 2002-08-09 | 2007-10-31 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料用の光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法 |
JP4560507B2 (ja) | 2003-02-19 | 2010-10-13 | チバ ホールディング インコーポレーテッド | ハロゲン化オキシム誘導体及び潜在的酸としてのそれらの使用 |
JP3981830B2 (ja) | 2003-05-26 | 2007-09-26 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP4088784B2 (ja) * | 2003-06-19 | 2008-05-21 | 信越化学工業株式会社 | 高分子化合物の製造方法及びレジスト材料 |
JP4305637B2 (ja) | 2003-06-19 | 2009-07-29 | 信越化学工業株式会社 | 高分子化合物及びポジ型レジスト材料並びにこれを用いたパターン形成方法 |
JP4862707B2 (ja) * | 2006-03-17 | 2012-01-25 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
JP2007328090A (ja) * | 2006-06-07 | 2007-12-20 | Fujifilm Corp | 感光性組成物、感光性フィルム、パターン形成方法、及びプリント基板 |
JP2007328234A (ja) * | 2006-06-09 | 2007-12-20 | Fujifilm Corp | パターン形成方法及びtftアレイ基板並びに液晶表示素子 |
JP4548617B2 (ja) * | 2006-06-09 | 2010-09-22 | 信越化学工業株式会社 | 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法 |
-
2006
- 2006-06-14 JP JP2006164383A patent/JP4623311B2/ja active Active
-
2007
- 2007-06-05 US US11/806,970 patent/US7498126B2/en active Active
- 2007-06-13 TW TW096121379A patent/TWI369581B/zh active
- 2007-06-13 KR KR1020070057654A patent/KR100994874B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100994874B1 (ko) | 2010-11-16 |
JP4623311B2 (ja) | 2011-02-02 |
KR20070119523A (ko) | 2007-12-20 |
JP2007333933A (ja) | 2007-12-27 |
TW200821749A (en) | 2008-05-16 |
US20070292768A1 (en) | 2007-12-20 |
US7498126B2 (en) | 2009-03-03 |
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