TWI368325B - Semiconductor device and method of fabricating the semiconductor device - Google Patents
Semiconductor device and method of fabricating the semiconductor deviceInfo
- Publication number
- TWI368325B TWI368325B TW097123820A TW97123820A TWI368325B TW I368325 B TWI368325 B TW I368325B TW 097123820 A TW097123820 A TW 097123820A TW 97123820 A TW97123820 A TW 97123820A TW I368325 B TWI368325 B TW I368325B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- fabricating
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66689—Lateral DMOS transistors, i.e. LDMOS transistors with a step of forming an insulating sidewall spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070062507A KR100848245B1 (ko) | 2007-06-25 | 2007-06-25 | 반도체 소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200901478A TW200901478A (en) | 2009-01-01 |
TWI368325B true TWI368325B (en) | 2012-07-11 |
Family
ID=39825162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097123820A TWI368325B (en) | 2007-06-25 | 2008-06-25 | Semiconductor device and method of fabricating the semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US7994013B2 (zh) |
JP (1) | JP2009004792A (zh) |
KR (1) | KR100848245B1 (zh) |
CN (1) | CN101335297B (zh) |
TW (1) | TWI368325B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7855414B2 (en) * | 2006-07-28 | 2010-12-21 | Broadcom Corporation | Semiconductor device with increased breakdown voltage |
US20080246080A1 (en) * | 2006-07-28 | 2008-10-09 | Broadcom Corporation | Shallow trench isolation (STI) based laterally diffused metal oxide semiconductor (LDMOS) |
US8004039B2 (en) * | 2009-07-31 | 2011-08-23 | Micrel, Inc. | Field effect transistor with trench-isolated drain |
US9171726B2 (en) | 2009-11-06 | 2015-10-27 | Infineon Technologies Ag | Low noise semiconductor devices |
US20110169079A1 (en) * | 2010-01-14 | 2011-07-14 | Broadcom Corporation | Semiconductor device having an overlapping multi-well implant and method for fabricating same |
US8274114B2 (en) * | 2010-01-14 | 2012-09-25 | Broadcom Corporation | Semiconductor device having a modified shallow trench isolation (STI) region and a modified well region |
US8283722B2 (en) | 2010-06-14 | 2012-10-09 | Broadcom Corporation | Semiconductor device having an enhanced well region |
US9123807B2 (en) | 2010-12-28 | 2015-09-01 | Broadcom Corporation | Reduction of parasitic capacitance in a semiconductor device |
JP6381067B2 (ja) * | 2013-03-19 | 2018-08-29 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
CN107346788B (zh) * | 2016-05-06 | 2020-04-28 | 华润微电子(重庆)有限公司 | Resurf半导体器件及其制作方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0897411A (ja) | 1994-09-21 | 1996-04-12 | Fuji Electric Co Ltd | 横型高耐圧トレンチmosfetおよびその製造方法 |
US6140193A (en) * | 1999-05-12 | 2000-10-31 | United Microelectronics Corp. | Method for forming a high-voltage semiconductor device with trench structure |
US6768171B2 (en) * | 2000-11-27 | 2004-07-27 | Power Integrations, Inc. | High-voltage transistor with JFET conduction channels |
GB0107408D0 (en) * | 2001-03-23 | 2001-05-16 | Koninkl Philips Electronics Nv | Field effect transistor structure and method of manufacture |
KR20030052693A (ko) * | 2001-12-21 | 2003-06-27 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조방법 |
JP2004014633A (ja) | 2002-06-04 | 2004-01-15 | Ricoh Co Ltd | Locosオフセットタイプトランジスタとそれを用いた基準電圧発生回路 |
CN1212674C (zh) * | 2003-01-08 | 2005-07-27 | 东南大学 | 横向缓冲p型金属氧化物半导体管 |
US6903421B1 (en) | 2004-01-16 | 2005-06-07 | System General Corp. | Isolated high-voltage LDMOS transistor having a split well structure |
KR101068139B1 (ko) * | 2004-04-30 | 2011-09-27 | 매그나칩 반도체 유한회사 | Ldmosfet 제조방법 |
KR101099560B1 (ko) * | 2004-05-12 | 2011-12-28 | 매그나칩 반도체 유한회사 | 고전압 트랜지스터 제조방법 |
KR20060078002A (ko) * | 2004-12-30 | 2006-07-05 | 주식회사 하이닉스반도체 | 반도체 회로용 정전기 보호 소자 및 그의 제조 방법 |
KR20060078398A (ko) * | 2004-12-31 | 2006-07-05 | 매그나칩 반도체 유한회사 | 반도체 소자 및 그의 형성 방법 |
JP4874736B2 (ja) * | 2005-08-11 | 2012-02-15 | 株式会社東芝 | 半導体装置 |
JP2007096225A (ja) * | 2005-09-30 | 2007-04-12 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR100875159B1 (ko) * | 2007-05-25 | 2008-12-22 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
-
2007
- 2007-06-25 KR KR1020070062507A patent/KR100848245B1/ko active IP Right Grant
-
2008
- 2008-06-23 US US12/144,432 patent/US7994013B2/en active Active
- 2008-06-25 JP JP2008166139A patent/JP2009004792A/ja active Pending
- 2008-06-25 TW TW097123820A patent/TWI368325B/zh not_active IP Right Cessation
- 2008-06-25 CN CN2008101248935A patent/CN101335297B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101335297A (zh) | 2008-12-31 |
TW200901478A (en) | 2009-01-01 |
US7994013B2 (en) | 2011-08-09 |
JP2009004792A (ja) | 2009-01-08 |
CN101335297B (zh) | 2010-06-16 |
KR100848245B1 (ko) | 2008-07-24 |
US20080315306A1 (en) | 2008-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |