TWI368289B - Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method - Google Patents
Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing methodInfo
- Publication number
- TWI368289B TWI368289B TW096144329A TW96144329A TWI368289B TW I368289 B TWI368289 B TW I368289B TW 096144329 A TW096144329 A TW 096144329A TW 96144329 A TW96144329 A TW 96144329A TW I368289 B TWI368289 B TW I368289B
- Authority
- TW
- Taiwan
- Prior art keywords
- lithographic
- device manufacturing
- processing cell
- inspection method
- lithographic processing
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70533—Controlling abnormal operating mode, e.g. taking account of waiting time, decision to rework or rework flow
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Computer Networks & Wireless Communication (AREA)
- Data Mining & Analysis (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/606,376 US7710572B2 (en) | 2006-11-30 | 2006-11-30 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200832584A TW200832584A (en) | 2008-08-01 |
TWI368289B true TWI368289B (en) | 2012-07-11 |
Family
ID=39276159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096144329A TWI368289B (en) | 2006-11-30 | 2007-11-22 | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US7710572B2 (zh) |
EP (1) | EP1927893A3 (zh) |
JP (1) | JP5198836B2 (zh) |
KR (1) | KR100937760B1 (zh) |
CN (1) | CN101236359B (zh) |
IL (1) | IL187570A (zh) |
SG (1) | SG143131A1 (zh) |
TW (1) | TWI368289B (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2003331A (en) | 2008-09-02 | 2010-03-12 | Asml Netherlands Bv | Device manufacturing method, control system, computer program and computer-readable medium. |
NL2003497A (en) | 2008-09-23 | 2010-03-24 | Asml Netherlands Bv | Lithographic system, lithographic method and device manufacturing method. |
US9188875B2 (en) | 2008-12-16 | 2015-11-17 | Asml Netherlands B.V. | Calibration method, inspection method and apparatus, lithographic apparatus, and lithographic processing cell |
CN104834186B (zh) | 2008-12-30 | 2018-01-09 | Asml荷兰有限公司 | 检验方法和设备、光刻设备、光刻处理单元和器件制造方法 |
KR101257453B1 (ko) * | 2009-05-12 | 2013-04-23 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피에 사용하는 검사 방법 |
NL2004949A (en) * | 2009-08-21 | 2011-02-22 | Asml Netherlands Bv | Inspection method and apparatus. |
NL2005325A (en) * | 2009-09-24 | 2011-03-28 | Asml Netherlands Bv | Methods and apparatus for modeling electromagnetic scattering properties of microscopic structures and methods and apparatus for reconstruction of microscopic structures. |
NL2005521A (en) * | 2009-10-22 | 2011-04-26 | Asml Netherlands Bv | Methods and apparatus for calculating electromagnetic scattering properties of a structure using a normal-vector field and for reconstruction of approximate structures. |
US8629407B2 (en) * | 2011-04-13 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contamination inspection |
KR101765814B1 (ko) * | 2011-11-30 | 2017-08-08 | 에이에스엠엘 네델란즈 비.브이. | 검사 방법 및 장치, 및 대응하는 리소그래피 장치 |
FR2994263B1 (fr) * | 2012-08-02 | 2018-09-07 | Vit | Procede et dispositif d'identification de materiaux dans une scene |
DE102012214690B4 (de) | 2012-08-17 | 2015-12-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hybrider Detektor zum Detektieren elektromagnetischer Strahlung und Verfahren zu seiner Herstellung |
US9291920B2 (en) | 2012-09-06 | 2016-03-22 | Kla-Tencor Corporation | Focus recipe determination for a lithographic scanner |
US9903711B2 (en) * | 2015-04-06 | 2018-02-27 | KLA—Tencor Corporation | Feed forward of metrology data in a metrology system |
CN108701625B (zh) * | 2016-02-24 | 2023-07-14 | 科磊股份有限公司 | 光学计量的准确度提升 |
JP2017167310A (ja) * | 2016-03-16 | 2017-09-21 | 株式会社ニコン | 評価装置及び評価方法、表示装置及び表示方法、露光装置及び露光方法、露光システム、デバイス製造装置、並びに、コンピュータプログラム |
JP6884855B2 (ja) * | 2016-10-21 | 2021-06-09 | エーエスエムエル ネザーランズ ビー.ブイ. | パターニングプロセスに対する補正を決定する方法、デバイス製造方法、リソグラフィ装置のための制御システム、及び、リソグラフィ装置 |
US10824079B2 (en) * | 2017-01-03 | 2020-11-03 | Kla-Tencor Corporation | Diffraction based overlay scatterometry |
EP3367166A1 (en) | 2017-02-24 | 2018-08-29 | ASML Netherlands B.V. | Method of measuring variation, inspection system, computer program, and computer system |
EP3415988A1 (en) * | 2017-06-14 | 2018-12-19 | ASML Netherlands B.V. | Device manufacturing methods |
FR3076618B1 (fr) * | 2018-01-05 | 2023-11-24 | Unity Semiconductor | Procede et systeme d'inspection optique d'un substrat |
JP6808684B2 (ja) * | 2018-06-14 | 2021-01-06 | キヤノン株式会社 | 情報処理装置、判定方法、プログラム、リソグラフィシステム、および物品の製造方法 |
CN114509921B (zh) * | 2022-01-13 | 2023-06-16 | 华中科技大学 | 一种光刻缺陷衍射光强差分检测方法 |
Family Cites Families (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4890239A (en) * | 1987-10-20 | 1989-12-26 | Shipley Company, Inc. | Lithographic process analysis and control system |
JP2773147B2 (ja) * | 1988-08-19 | 1998-07-09 | 株式会社ニコン | 露光装置の位置合わせ装置及び方法 |
JPH02246314A (ja) * | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | パターン作成方法 |
US5576829A (en) * | 1990-10-08 | 1996-11-19 | Nikon Corporation | Method and apparatus for inspecting a phase-shifted mask |
US6198527B1 (en) * | 1992-09-14 | 2001-03-06 | Nikon Corporation | Projection exposure apparatus and exposure method |
KR100422887B1 (ko) * | 1995-03-16 | 2005-02-02 | 가부시키가이샤 니콘 | 노광장치및방법 |
US5703692A (en) | 1995-08-03 | 1997-12-30 | Bio-Rad Laboratories, Inc. | Lens scatterometer system employing source light beam scanning means |
US6215896B1 (en) * | 1995-09-29 | 2001-04-10 | Advanced Micro Devices | System for enabling the real-time detection of focus-related defects |
US5712707A (en) * | 1995-11-20 | 1998-01-27 | International Business Machines Corporation | Edge overlay measurement target for sub-0.5 micron ground rules |
US5805290A (en) * | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
JP3854539B2 (ja) * | 2002-05-29 | 2006-12-06 | 株式会社日立ハイテクノロジーズ | 半導体ウェハの微細パターンの寸法及び3次元形状測定方法とその測定装置 |
US5880838A (en) | 1996-06-05 | 1999-03-09 | California Institute Of California | System and method for optically measuring a structure |
US5731877A (en) * | 1996-10-08 | 1998-03-24 | International Business Machines Corporation | Automated system utilizing self-labeled target by pitch encoding |
JP3397101B2 (ja) * | 1997-10-29 | 2003-04-14 | 株式会社日立製作所 | 欠陥検査方法および装置 |
US5963329A (en) | 1997-10-31 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for measuring the profile of small repeating lines |
US6541287B2 (en) * | 1998-03-19 | 2003-04-01 | Kabushiki Kaisha Toshiba | Temperature measuring method and apparatus, measuring method for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers |
US6248486B1 (en) * | 1998-11-23 | 2001-06-19 | U.S. Philips Corporation | Method of detecting aberrations of an optical imaging system |
US6174632B1 (en) * | 1999-03-05 | 2001-01-16 | Advanced Micro Devices, Inc. | Wafer defect detection method utilizing wafer with development residue attracting area |
US6136662A (en) * | 1999-05-13 | 2000-10-24 | Lsi Logic Corporation | Semiconductor wafer having a layer-to-layer alignment mark and method for fabricating the same |
TW522287B (en) | 2000-01-14 | 2003-03-01 | Asml Netherlands Bv | Lithographic projection apparatus, method of calibrating a lithographic projection apparatus, method of manufacturing a device using a lithographic projection apparatus, and device manufactured thereby |
US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
WO2001084382A1 (en) | 2000-05-04 | 2001-11-08 | Kla-Tencor, Inc. | Methods and systems for lithography process control |
US6643557B1 (en) * | 2000-06-09 | 2003-11-04 | Advanced Micro Devices, Inc. | Method and apparatus for using scatterometry to perform feedback and feed-forward control |
JP2004507719A (ja) * | 2000-08-10 | 2004-03-11 | サーマ−ウェーブ・インコーポレイテッド | 回折微細構造の光学的測定のためのデータベース補間方法 |
US6753961B1 (en) | 2000-09-18 | 2004-06-22 | Therma-Wave, Inc. | Spectroscopic ellipsometer without rotating components |
IL138552A (en) | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Measurement of transverse displacement by optical method |
US7349090B2 (en) * | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
US6625497B2 (en) * | 2000-11-20 | 2003-09-23 | Applied Materials Inc. | Semiconductor processing module with integrated feedback/feed forward metrology |
US6768983B1 (en) | 2000-11-28 | 2004-07-27 | Timbre Technologies, Inc. | System and method for real-time library generation of grating profiles |
US6704340B2 (en) * | 2001-01-29 | 2004-03-09 | Cymer, Inc. | Lithography laser system with in-place alignment tool |
DE10103958C1 (de) * | 2001-01-30 | 2002-05-29 | Infineon Technologies Ag | Verfahren zur Inspektion von Defekten auf einer Maske |
US6515744B2 (en) | 2001-02-08 | 2003-02-04 | Therma-Wave, Inc. | Small spot ellipsometer |
WO2002065545A2 (en) | 2001-02-12 | 2002-08-22 | Sensys Instruments Corporation | Overlay alignment metrology using diffraction gratings |
US6699624B2 (en) | 2001-02-27 | 2004-03-02 | Timbre Technologies, Inc. | Grating test patterns and methods for overlay metrology |
EP1370828B1 (en) | 2001-03-02 | 2016-11-23 | Accent Optical Technologies, Inc. | Line profile asymmetry measurement using scatterometry |
JP2002260994A (ja) * | 2001-03-05 | 2002-09-13 | Tokyo Electron Ltd | 基板処理装置 |
US6704661B1 (en) | 2001-07-16 | 2004-03-09 | Therma-Wave, Inc. | Real time analysis of periodic structures on semiconductors |
US6785638B2 (en) | 2001-08-06 | 2004-08-31 | Timbre Technologies, Inc. | Method and system of dynamic learning through a regression-based library generation process |
US7061615B1 (en) | 2001-09-20 | 2006-06-13 | Nanometrics Incorporated | Spectroscopically measured overlay target |
US6608690B2 (en) | 2001-12-04 | 2003-08-19 | Timbre Technologies, Inc. | Optical profilometry of additional-material deviations in a periodic grating |
JP4938219B2 (ja) * | 2001-12-19 | 2012-05-23 | ケーエルエー−テンカー コーポレイション | 光学分光システムを使用するパラメトリック・プロフィーリング |
US6772084B2 (en) | 2002-01-31 | 2004-08-03 | Timbre Technologies, Inc. | Overlay measurements using periodic gratings |
US6813034B2 (en) | 2002-02-05 | 2004-11-02 | Therma-Wave, Inc. | Analysis of isolated and aperiodic structures with simultaneous multiple angle of incidence measurements |
CN101409244A (zh) * | 2002-03-06 | 2009-04-15 | 旺宏电子股份有限公司 | 晶圆表面与工艺微粒与缺陷的监控方法 |
US7061627B2 (en) | 2002-03-13 | 2006-06-13 | Therma-Wave, Inc. | Optical scatterometry of asymmetric lines and structures |
US6721691B2 (en) | 2002-03-26 | 2004-04-13 | Timbre Technologies, Inc. | Metrology hardware specification using a hardware simulator |
US6928628B2 (en) | 2002-06-05 | 2005-08-09 | Kla-Tencor Technologies Corporation | Use of overlay diagnostics for enhanced automatic process control |
US7046376B2 (en) | 2002-07-05 | 2006-05-16 | Therma-Wave, Inc. | Overlay targets with isolated, critical-dimension features and apparatus to measure overlay |
US6919964B2 (en) * | 2002-07-09 | 2005-07-19 | Therma-Wave, Inc. | CD metrology analysis using a finite difference method |
DE60314484T2 (de) | 2002-11-01 | 2008-02-21 | Asml Netherlands B.V. | Untersuchungsverfahren und Verfahren zur Herstellung einer Vorrichtung |
US7119953B2 (en) * | 2002-12-27 | 2006-10-10 | Xradia, Inc. | Phase contrast microscope for short wavelength radiation and imaging method |
EP1477851A1 (en) * | 2003-05-13 | 2004-11-17 | ASML Netherlands B.V. | Device manufacturing method and lithographic apparatus |
US7068363B2 (en) | 2003-06-06 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems for inspection of patterned or unpatterned wafers and other specimen |
EP1646165B1 (en) * | 2003-07-16 | 2010-09-15 | Nippon Telegraph And Telephone Corporation | Optical communication system using optical frequency code, optical transmission device and optical reception device thereof, and reflection type optical communication device |
KR100542747B1 (ko) * | 2003-08-01 | 2006-01-11 | 삼성전자주식회사 | 결함 검사 방법 및 결함 검사 장치 |
US7061623B2 (en) | 2003-08-25 | 2006-06-13 | Spectel Research Corporation | Interferometric back focal plane scatterometry with Koehler illumination |
US20050185174A1 (en) | 2004-02-23 | 2005-08-25 | Asml Netherlands B.V. | Method to determine the value of process parameters based on scatterometry data |
US7388677B2 (en) * | 2004-03-22 | 2008-06-17 | Timbre Technologies, Inc. | Optical metrology optimization for repetitive structures |
JP2005315742A (ja) * | 2004-04-28 | 2005-11-10 | Sony Corp | 測定装置および測定方法 |
US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
KR100639676B1 (ko) * | 2004-09-21 | 2006-10-30 | 삼성전자주식회사 | 반도체 제조용 포토리소그라피 설비 제어시스템 및 그제어방법 |
US20060109463A1 (en) | 2004-11-22 | 2006-05-25 | Asml Netherlands B.V. | Latent overlay metrology |
US7508489B2 (en) * | 2004-12-13 | 2009-03-24 | Carl Zeiss Smt Ag | Method of manufacturing a miniaturized device |
US7453577B2 (en) | 2004-12-14 | 2008-11-18 | Asml Netherlands B.V. | Apparatus and method for inspecting a patterned part of a sample |
TWI269870B (en) * | 2004-12-30 | 2007-01-01 | Ind Tech Res Inst | Method for deciding structure parameters of a grating |
-
2006
- 2006-11-30 US US11/606,376 patent/US7710572B2/en active Active
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2007
- 2007-10-19 SG SG200717103-6A patent/SG143131A1/en unknown
- 2007-11-22 TW TW096144329A patent/TWI368289B/zh active
- 2007-11-22 IL IL187570A patent/IL187570A/en active IP Right Grant
- 2007-11-22 JP JP2007302404A patent/JP5198836B2/ja active Active
- 2007-11-29 EP EP07254622.9A patent/EP1927893A3/en not_active Withdrawn
- 2007-11-29 KR KR1020070123004A patent/KR100937760B1/ko active IP Right Grant
- 2007-11-30 CN CN2007101962206A patent/CN101236359B/zh active Active
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KR100937760B1 (ko) | 2010-01-20 |
IL187570A (en) | 2013-06-27 |
CN101236359A (zh) | 2008-08-06 |
JP2008166734A (ja) | 2008-07-17 |
US7710572B2 (en) | 2010-05-04 |
EP1927893A3 (en) | 2017-08-02 |
JP5198836B2 (ja) | 2013-05-15 |
US20080128644A1 (en) | 2008-06-05 |
EP1927893A2 (en) | 2008-06-04 |
IL187570A0 (en) | 2008-03-20 |
TW200832584A (en) | 2008-08-01 |
KR20080049670A (ko) | 2008-06-04 |
SG143131A1 (en) | 2008-06-27 |
CN101236359B (zh) | 2012-07-25 |
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